NTS2101PT1G

## NTS2101P 

## Power MOSFET 

## **−8.0 V, −1.4 A, Single P−Channel, SC−70** 

## **Features** 

- Leading Trench Technology for Low RDS(on) Extending Battery Life 

## **http://onsemi.com** 

- −1.8 V Rated for Low Voltage Gate Drive 

- SC−70 Surface Mount for Small Footprint (2 x 2 mm) 

- Pb−Free Package is Available 

## **Applications** 

- High Side Load Switch 

|**V(BR)DSS**|**RDS(on) Typ**|**ID Max**|
|---|---|---|
|−8.0 V|65 m @ −4.5 V<br>78 m @ −2.5 V<br>117 m @ −1.8 V|−1.4 A|



- Charging Circuit 

• Single Cell Battery Applications such as Cell Phones, Digital Cameras, PDAs, etc. S 

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P−Channel MOSFET<br>**----- End of picture text -----**<br>


**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) **Parameter Symbol Value Units** G Drain−to−Source Voltage VDSS −8.0 V Gate−to−Source Voltage VGS ± 8.0 V Continuous Drain Steady TA = 25 ° C ID −1.4 A Current (Note 1) State TA = 70 ° C −1.1 D t ≤ 5 s TA = 25 ° C −1.5 A ~~PEE e~~ **MARKING DIAGRAM &** Power Dissipation Steady TA = 25 ° C PD 0.29 W **PIN ASSIGNMENT** (Note 1) State 3 Drain t ≤ 5 s 0.33 W 3 ~~Te~~ Pulsed Drain Current tp = 10 s IDM −3.0 A 1 TS M 2 Operating Junction and Storage Temperature TJ, −55 to ° C TSTG 150 **SC−70/SOT−323CASE 419** 1 2 Source Current (Body Diode), Continuous IS −0.46 A **STYLE 8** Gate Source ~~pf~~ Lead Temperature for Soldering Purposes TL 260 ° C (1/8 ″ from case for 10 s) TS = Device Code ~~ee } |~~ M = Date Code* **THERMAL RESISTANCE RATINGS** | = Pb−Free Package **Parameter Symbol Max Units** (Note: Microdot may be in either location) Junction−to−Ambient – Steady State (Note 1) R JA 430 ° C/W *Date Code orientation may vary depending upon manufacturing location. Junction−to−Ambient − t ≤ 5 s (Note 1) R JA 375 

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|NTS2101PT1|SOT−323|3000/Tape & Reel|
|NTS2101PT1G|SOT−323<br>(Pb−Free)|3000/Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **NTS2101P/D** 

**1** 

© Semiconductor Components Industries, LLC, 2006 **March, 2006 − Rev. 1** 

## **NTS2101P** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise stated) 

|**ELECTRICAL CHARACTERISTIC**|**S**(TJ= 25°C u|nless otherwise stated)|nless otherwise stated)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|−250�A|−8.0|−20||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ||||−10||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= −6.4 V|TJ= 25°C|||−1.0|�A|
||||TJ= 70°C|||−5.0||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=±8.0 V||||±100|nA|
|**ON CHARACTERISTICS**(Note 2)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= −250�A||−0.45|−0.7||V|
|Negative Threshold<br>Temperature Coefficient|VGS(TH)/TJ||||2.6||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= −4.5 V, ID= −1.0 A|||65|100|m�|
|||VGS= −2.5 V, ID= −0.5 A|||78|140||
|||VGS= −1.8 V, ID= −0.3 A|||117|210||
|**CHARGES AND CAPACITANCES**||||||||
|Input Capacitance|CISS|VGS= 0 V, f = 1.0 MHz,<br>VDS= −8.0 V|||640||pF|
|Output Capacitance|COSS||||120|||
|Reverse Transfer Capacitance|CRSS||||82|||
|Total Gate Charge|QG(TOT)|VGS= −5.0 V, VDD= −5.0 V,<br>ID= −1.0 A|||6.4||nC|
|Threshold Gate Charge|QG(TH)||||0.7|||
|Gate−to−Source Charge|QGS||||1.0|||
|Gate−to−Drain Charge|QGD||||1.5|||
|**SWITCHING CHARACTERISTICS**(Note 3)||||||||
|Turn−On Delay Time|td(ON)|VGS= −4.5 V, VDD= −4.0 V,<br>ID= −1.0 A, RG= 6.2�|||6.2||ns|
|Rise Time|tr||||15|||
|Turn−Off Delay Time|td(OFF)||||26|||
|Fall Time|tf||||18|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= −0.3 A|TJ= 25°C||−0.62|−1.2|V|
||||TJ= 125°C||−0.51|||
|Reverse Recovery Time|tRR|VGS= 0 V, dISD/dt = 100 A/�s,<br>IS= −1.0 A|||23.4||ns|
|Charge Time|Ta||||7.7|||
|Discharge Time|Tb||||15.7|||
|Reverse Recovery Charge|QRR||||9.5||nC|



2. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2%. 

3. Switching characteristics are independent of operating junction temperatures. 

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**2** 

**NTS2101P** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

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8.0<br>−2.2 V TJ = 25J = 25 = 25 ° C −2.0 V<br>6.0<br>VGS = −2.5 V to −4.5 VGS = −2.5 V to −4.5 V = −2.5 V to −4.5 V −1.8 V<br>4.0<br>−1.6 V<br>2.0 −1.4 V<br>−1.2 V −1.0 V<br>0<br>0 1.0 2.0 3.0 4.0<br>DRAIN CURRENT (AMPS)<br>D,<br>−I<br>**----- End of picture text -----**<br>


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8.0 8.0<br>−2.2 V TJ = 25J = 25 = 25 ° C VDS �  −10 V<br>−2.0 V<br>6.0 6.0<br>VGS = −2.5 V to −4.5 VGS = −2.5 V to −4.5 V = −2.5 V to −4.5 V −1.8 V<br>4.0 4.0<br>−1.6 V<br>2.0 −1.4 V 2.0 TJ = 125 ° C TJ = 25 ° C<br>−1.2 V −1.0 V<br>TJ = −55 ° C<br>0 0<br>0 1.0 2.0 3.0 4.0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>0.16 0.16<br>VGS = −4.5 V VGS = −2.5 V<br>TJ = 125 ° C<br>0.12 0.12<br>TJ = 125 ° C TJ = 25 ° C<br>0.08 TJ = 25 ° C 0.08 TJ = −55 ° C<br>0.04 TJ = −55 ° C 0.04<br>0 0<br>0 2.0 4.0 6.0 8.0 0 2.0 4.0 6.0 8.0<br>−ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS)<br>Figure 3. On−Resistance vs. Drain Current and Figure 4. On−Resistance vs. Drain Current<br>Temperature and Temperature<br>1.5 1000<br>ID = −1.0 A TJ = 25 ° C<br>VGS = −4.5 V VGS = 0 V<br>800<br>1.3<br>CISS<br>600<br>1.1<br>400<br>COSS<br>0.9<br>200<br>CRSS<br>0.7<br>−50 −25 0 25 50 75 100 125 150 0 0 2 4 6 8<br>TJ, JUNCTION TEMPERATURE ( ° C) DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>DRAIN CURRENT (AMPS) DRAIN CURRENT (AMPS)<br>D,  D,<br>−I −I<br>) � ) �<br>DRAIN−TO−SOURCE RESISTANCE ( DRAIN−TO−SOURCE RESISTANCE (<br>DS(on),  DS(on),<br>R R<br>DRAIN−TO−SOURCE<br>C, CAPACITANCE (pF)<br>DS(on),<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

**Figure 6. Capacitance Variation** 

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**3** 

**NTS2101P** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

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5<br>QT<br>4<br>3<br>2 QGS QGD<br>1 VDS = −5.0 A<br>ID = −1.0 A<br>TA = 25 ° C<br>0<br>0 2.0 4.0 6.0 8.0<br>QG, TOTAL GATE CHARGE (nC)<br>GATE−TO−SOURCE VOLTAGE (VOLTS)<br>GS,<br>−V<br>**----- End of picture text -----**<br>


**Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Gate Charge** 

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4.0<br>VGS = 0 V<br>3.0<br>2.0<br>TJ = 125 ° C<br>1.0<br>TJ = 25 ° C<br>0<br>0 0.2 0.4 0.6 0.8 1.0<br>−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)<br>, SOURCE CURRENT (AMPS)<br>S<br>−I<br>**----- End of picture text -----**<br>


**Figure 8. Diode Forward Voltage vs. Current** 

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**4** 

**NTS2101P** 

## **PACKAGE DIMENSIONS** 

**SC−70 (SOT−323)** CASE 419−04 ISSUE M 

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D NOTES:<br>e1 1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>3<br>MILLIMETERS INCHES<br>HE E DIM MIN NOM MAX MIN NOM MAX<br>1 2 A 0.80 0.90 1.00 0.032 0.035 0.040<br>A1 0.00 0.05 0.10 0.000 0.002 0.004<br>A2 0.7 REF 0.028 REF<br>i an —————— b 0.30 0.35 0.40 0.012 0.014 0.016<br>b c 0.10 0.18 0.25 0.004 0.007 0.010<br>i a a D 1.80 2.10 2.20 0.071 0.083 0.087<br>e E 1.15 1.24 1.35 0.045 0.049 0.053<br>e 1.20 1.30 1.40 0.047 0.051 0.055<br>e1 0.65 BSC 0.026 BSC<br>L 0.425 REF 0.017 REF<br>A A2 c H E 2.00 2.10 2.40 0.079 0.083 0.095<br>STYLE 8:<br>PIN 1. GATE<br>0.05 (0.002) A1 L  2. 3. DRAINSOURCE<br>**----- End of picture text -----**<br>


## **SOLDERING FOOTPRINT*** 

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0.65<br>0.65 0.025<br>0.025<br>1.9<br>ain<br>0.075<br>0.9<br>0.035<br>0.7<br>La<br>0.028<br>SCALE 10:1 mm<br>a e = inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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**5**