# Power MOSFET, P Channel, 8 V, 1.4 A, 0.1 ohm, SOT-323, Surface Mount ![Product image](https://novapart.co/image/farnell:1453612/) **URL**: https://novapart.co/products/NTS2101PT1G/power-mosfet-p-channel-8-v-14-a-01-ohm-sot-323 **SKU**: NTS2101PT1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.1060 **Stock**: 1000+ **Lead Time**: 141 days (indicative) ## Description Transistor Polarity:P Channel; Continuous Drain Current Id:1.4A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700mV; Power Dis ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | P Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 290mW | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 4.5V | | Transistor Case Style | SOT-323 | | Drain Source Voltage Vds | 8V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 1.4A | | Drain Source On State Resistance | 0.1ohm | | Gate Source Threshold Voltage Max | 700mV | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1453612/) ## MOSFET – Power, Single, P-Channel, SC-70 ## -8.0 V, -1.4 A ## NTS2101P ## **Features** - Leading Trench Technology for Low RDS(on) Extending Battery Life - −1.8 V Rated for Low Voltage Gate Drive - SC−70 Surface Mount for Small Footprint (2 x 2 mm) - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Applications** **www.onsemi.com** |**V(BR)DSS**|**RDS(on) Typ**|**ID Max**| |---|---|---| |−8.0 V|65 m @ −4.5 V
78 m @ −2.5 V
117 m @ −1.8 V|−1.4 A| - High Side Load Switch - Charging Circuit - Single Cell Battery Applications such as Cell Phones, Digital Cameras, PDAs, etc. ## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) |**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise stated)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise stated)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise stated)|C unless otherwise stated)|C unless otherwise stated)|| |---|---|---|---|---|---| |**Parameter**|||**Symbol**|**Value**|**Units**| |Drain−to−Source Voltage|||VDSS|−8.0|V| |Gate−to−Source Voltage|||VGS|±8.0|V| |Continuous Drain
Current (Note 1)|Steady
State|TA= 25°C|ID|−1.4|A| |||TA= 70°C||−1.1|| ||t≤5 s|TA= 25°C||−1.5|A| |Power Dissipation
(Note 1)
~~oeeeeee~~|Steady
State
~~oeeeeee~~|TA= 25°C
~~oeeeeee~~|PD
~~oeeeeee~~|0.29
~~oeeeeee~~|W
~~oeeeeee~~| ||t≤5 s
~~oeeeeee~~|||0.33
~~oeeeeee~~|W
~~oeeeeee~~| |Pulsed Drain Current
~~oeeeeee~~|tp = 10 s
~~oeeeeee~~||IDM
~~oeeeeee~~|−3.0
~~oeeeeee~~|A
~~oeeeeee~~| |Operating Junction and Storage Temperature
~~oeeeeee~~
~~ne~~|||TJ,
TSTG
~~oeeeeee~~
~~ne~~|−55 to
150
~~oeeeeee~~
~~ne~~|°C
~~oeeeeee~~
~~ne~~| |Source Current (Body Diode), Continuous
~~ne~~
~~ee~~|||IS
~~ne~~
~~ee~~|−0.46
~~ne~~
~~ee~~|A
~~ne~~
~~ee~~| |Lead Temperature for Soldering Purposes
(1/8″from case for 10 s)
~~ee~~|||TL
~~ee~~|260
~~ee~~|°C
~~ee~~| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). **==> picture [181 x 309] intentionally omitted <==** **----- Start of picture text -----**
P−Channel MOSFET
S
G
D
MARKING DIAGRAM &
PIN ASSIGNMENT
3 Drain
3
1 TS M
2
SC−70/SOT−323
CASE 419 1 ee 2
STYLE 8 Gate Source
TS = Device Code
M = Date Code*
| = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
**----- End of picture text -----**
**ORDERING INFORMATION** **Device Package Shipping**[†] NTS2101PT1 SOT−323 3000/Tape & Reel SOT−323 NTS2101PT1G 3000/Tape & Reel (Pb−Free) ~~=~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: **NTS2101P/D** **1** © Semiconductor Components Industries, LLC, 2006 **February, 2020 − Rev. 2** ## **NTS2101P** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise stated) |**ELECTRICAL CHARACTERISTIC**|**S**(TJ= 25°C u|nless otherwise stated)|nless otherwise stated)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|−250�A|−8.0|−20||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/TJ||||−10||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= −6.4 V|TJ= 25°C|||−1.0|�A| ||||TJ= 70°C|||−5.0|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=±8.0 V||||±100|nA| |**ON CHARACTERISTICS**(Note 2)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= −250�A||−0.45|−0.7|−1.0|V| |Negative Threshold
Temperature Coefficient|VGS(TH)/TJ||||2.6||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= −4.5 V, ID= −1.0 A|||65|100|m�| |||VGS= −2.5 V, ID= −0.5 A|||78|140|| |||VGS= −1.8 V, ID= −0.3 A|||117|210|| |**CHARGES AND CAPACITANCES**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1.0 MHz,
VDS= −8.0 V|||640||pF| |Output Capacitance|COSS||||120||| |Reverse Transfer Capacitance|CRSS||||82||| |Total Gate Charge|QG(TOT)|VGS= −5.0 V, VDD= −5.0 V,
ID= −1.0 A|||6.4||nC| |Threshold Gate Charge|QG(TH)||||0.7||| |Gate−to−Source Charge|QGS||||1.0||| |Gate−to−Drain Charge|QGD||||1.5||| |**SWITCHING CHARACTERISTICS**(Note 3)|||||||| |Turn−On Delay Time|td(ON)|VGS= −4.5 V, VDD= −4.0 V,
ID= −1.0 A, RG= 6.2�|||6.2||ns| |Rise Time|tr||||15||| |Turn−Off Delay Time|td(OFF)||||26||| |Fall Time|tf||||18||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,
IS= −0.3 A|TJ= 25°C||−0.62|−1.2|V| ||||TJ= 125°C||−0.51||| |Reverse Recovery Time|tRR|VGS= 0 V, dISD/dt = 100 A/�s,
IS= −1.0 A|||23.4||ns| |Charge Time|Ta||||7.7||| |Discharge Time|Tb||||15.7||| |Reverse Recovery Charge|QRR||||9.5||nC| 2. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com** **2** **NTS2101P** ## **TYPICAL ELECTRICAL CHARACTERISTICS** **==> picture [244 x 175] intentionally omitted <==** **----- Start of picture text -----**
8.0
−2.2 V TJ = 25J = 25 = 25 ° C −2.0 V
6.0
VGS = −2.5 V to −4.5 VGS = −2.5 V to −4.5 V = −2.5 V to −4.5 V −1.8 V
4.0
−1.6 V
2.0 −1.4 V
−1.2 V −1.0 V
0
0 1.0 2.0 3.0 4.0
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS), DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DRAIN CURRENT (AMPS)
D,
−I
**----- End of picture text -----**
**==> picture [494 x 606] intentionally omitted <==** **----- Start of picture text -----**
8.0 8.0
−2.2 V TJ = 25J = 25 = 25 ° C VDS � −10 V
−2.0 V
6.0 6.0
VGS = −2.5 V to −4.5 VGS = −2.5 V to −4.5 V = −2.5 V to −4.5 V −1.8 V
4.0 4.0
−1.6 V
2.0 −1.4 V 2.0 TJ = 125 ° C TJ = 25 ° C
−1.2 V −1.0 V
TJ = −55 ° C
0 0
0 1.0 2.0 3.0 4.0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS), DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.16 0.16
VGS = −4.5 V VGS = −2.5 V
TJ = 125 ° C
0.12 0.12
TJ = 125 ° C TJ = 25 ° C
0.08 TJ = 25 ° C 0.08 TJ = −55 ° C
0.04 TJ = −55 ° C 0.04
0 0
0 2.0 4.0 6.0 8.0 0 2.0 4.0 6.0 8.0
−ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current and Figure 4. On−Resistance vs. Drain Current
Temperature and Temperature
1.5 1000
ID = −1.0 A TJ = 25 ° C
VGS = −4.5 V VGS = 0 V
800
1.3
CISS
600
1.1
400
COSS
0.9
200
CRSS
0.7
−50 −25 0 25 50 75 100 125 150 0 0 2 4 6 8
TJ, JUNCTION TEMPERATURE ( ° C) DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DRAIN CURRENT (AMPS) DRAIN CURRENT (AMPS)
D, D,
−I −I
) � ) �
DRAIN−TO−SOURCE RESISTANCE ( DRAIN−TO−SOURCE RESISTANCE (
DS(on), DS(on),
R R
DRAIN−TO−SOURCE
C, CAPACITANCE (pF)
DS(on),
R RESISTANCE (NORMALIZED)
**----- End of picture text -----**
**Figure 5. On−Resistance Variation with Temperature** **Figure 6. Capacitance Variation** **www.onsemi.com** **3** **NTS2101P** ## **TYPICAL ELECTRICAL CHARACTERISTICS** **==> picture [232 x 180] intentionally omitted <==** **----- Start of picture text -----**
5
QT
4
3
2 QGS QGD
1 VDS = −5.0 A
ID = −1.0 A
TA = 25 ° C
0
0 2.0 4.0 6.0 8.0
QG, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE VOLTAGE (VOLTS)
GS,
−V
**----- End of picture text -----**
**Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Gate Charge** **==> picture [241 x 172] intentionally omitted <==** **----- Start of picture text -----**
4.0
VGS = 0 V
3.0
2.0
TJ = 125 ° C
1.0
TJ = 25 ° C
0
0 0.2 0.4 0.6 0.8 1.0
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
, SOURCE CURRENT (AMPS)
S
−I
**----- End of picture text -----**
**Figure 8. Diode Forward Voltage vs. Current** **www.onsemi.com** **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [37 x 36] intentionally omitted <==** **SC−70 (SOT−323)** CASE 419 ISSUE P **==> picture [81 x 8] intentionally omitted <==** **----- Start of picture text -----**
DATE 07 OCT 2021
**----- End of picture text -----**
**SCALE 4:1** ## **GENERIC MARKING DIAGRAM** **==> picture [116 x 78] intentionally omitted <==** **----- Start of picture text -----**
XX M �
�
1
XX = Specific Device Code
M = Date Code
� = Pb−Free Package
**----- End of picture text -----**
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. **==> picture [191 x 63] intentionally omitted <==** **----- Start of picture text -----**
STYLE 1: STYLE 2: STYLE 3:
CANCELLED PIN 1. ANODE PIN 1. BASE
2. N.C. 2. EMITTER
3. CATHODE 3. COLLECTOR
STYLE 6: STYLE 7: STYLE 8:
PIN 1. EMITTER PIN 1. BASE PIN 1. GATE
2. BASE 2. EMITTER 2. SOURCE
3. COLLECTOR 3. COLLECTOR 3. DRAIN
**----- End of picture text -----**
**==> picture [206 x 63] intentionally omitted <==** **----- Start of picture text -----**
STYLE 4: STYLE 5:
PIN 1. CATHODE PIN 1. ANODE
2. CATHODE 2. ANODE
3. ANODE 3. CATHODE
STYLE 9: STYLE 10: STYLE 11:
PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE
2. CATHODE 2. ANODE 2. CATHODE
3. CATHODE-ANODE 3. ANODE-CATHODE 3. CATHODE
**----- End of picture text -----**
## **DOCUMENT NUMBER: 98ASB42819B** **DESCRIPTION: SC−70 (SOT−323)** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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