NTS12120EMFST1G

## NTS12120EMFS, NRVTS12120EMFS 

## Very Low Leakage Trench-based Schottky Rectifier 

## **http://onsemi.com** 

## **Features** 

- Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage 

- Fast Switching with Exceptional Temperature Stability 

- Low Power Loss and Lower Operating Temperature 

- Higher Efficiency for Achieving Regulatory Compliance 

**TRENCH SCHOTTKY RECTIFIERS 12 AMPERES 120 VOLTS** 

- Low Thermal Resistance 

- High Surge Capability 

- NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These are Pb−Free and Halide−Free Devices 

## **Typical Applications** 

- Switching Power Supplies including Notebook / Netbook Adapters, ATX and Flat Panel Display 

- High Frequency and DC−DC Converters 

- Freewheeling and OR−ing diodes 

- Reverse Battery Protection 

- LED Lighting 

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1,2,3 5,6<br>MARKING<br>DIAGRAM<br>A C<br>°<br>1 A TE1212<br>SO−8 FLAT LEAD A AYWWZZ<br>CASE 488AA Not Used C<br>STYLE 2<br>TE1212 = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>W = Work Week<br>ZZ = Lot Traceability<br>**----- End of picture text -----**<br>


- Instrumentation 

## **Mechanical Characteristics:** 

- Case: Epoxy, Molded 

- Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. 

- Lead Finish: 100% Matte Sn (Tin) 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

- Device Meets MSL 1 Requirements 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|NTS12120EMFST1G|SO−8 FL<br>(Pb−Free)|1500 /<br>Tape & Reel|
|NTS12120EMFST3G|SO−8 FL<br>(Pb−Free)|5000 /<br>Tape & Reel|
|NRVTS12120EMFST1G|SO−8 FL<br>(Pb−Free)|1500 /<br>Tape & Reel|
|NRVTS12120EMFST3G|SO−8 FL<br>(Pb−Free)|5000 /<br>Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **NTS12120EMFS/D** 

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© Semiconductor Components Industries, LLC, 2014 **March, 2014 − Rev. 1** 

**NTS12120EMFS, NRVTS12120EMFS** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|120|V|
|Average Rectified Forward Current<br>(Rated VR, TC= 165°C)|IF(AV)|12|A|
|Peak Repetitive Forward Current,<br>(Rated VR, Square Wave, 20 kHz, TC= 163°C)|IFRM|24|A|
|Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|200|A|
|Storage Temperature Range|Tstg|−65 to +175|°C|
|Operating Junction Temperature|TJ|−55 to +175|°C|
|Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)|EAS|100|mJ|
|ESD Rating (Human Body Model)||3B||
|ESD Rating (Machine Model)||M4||



Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Typ**|**Max**|**Unit**|
|Thermal Resistance, Junction−to−Case, Steady State<br>(Assumes 600 mm21 oz. copper bond pad, on a FR4 board)|RθJC|2.0|−|°C/W|
|**ELECTRICAL CHARACTERISTICS**|||||
|**Rating**|**Symbol**|**Typ**|**Max**|**Unit**|
|Instantaneous Forward Voltage (Note 1)<br>(IF= 6 A, TJ= 25°C)<br>(IF= 12 A, TJ= 25°C)<br>(IF= 6 A, TJ= 125°C)<br>(IF= 12 A, TJ= 125°C)|VF|0.6<br>0.735<br>0.515<br>0.588|−<br>0.83<br>−<br>0.69|V|
|Instantaneous Reverse Current (Note 1)<br>(VR= 90 V, TJ= 25°C)<br>(Rated dc Voltage, TJ= 25°C)<br>(VR= 90 V, TJ= 125°C)<br>(Rated dc Voltage, TJ= 125°C)|IR|1.73<br>3.75<br>2.4<br>3.87|−<br>55<br>−<br>30|�A<br>�A<br>mA<br>mA|



1. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

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**NTS12120EMFS, NRVTS12120EMFS** 

## **TYPICAL CHARACTERISTICS** 

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100 100<br>10 TA = 125 ° C 10 TA = 125 ° C<br>TA = 150 ° C TA = 150 ° C<br>1 1<br>TA = 175 ° C TA = 25 ° C TA = 25 ° C<br>0.1 TA = −55 ° C 0.1 T A  = 175 ° C TA = −55 ° C<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>Figure 1. Typical Instantaneous Forward Figure 2. Maximum Instantaneous Forward<br>Characteristics Characteristics<br>1.E+00 1.E+00<br>TA = 175 ° C<br>1.E−011.E−02 TTAA = 175= 150 °° CC 1.E−011.E−02 TTAA = 150 = 125 °° CC<br>TA = 125 ° C<br>1.E−03 1.E−03<br>1.E−04 1.E−04<br>TA = 25 ° C<br>1.E−05 1.E−05<br>TA = 25 ° C<br>1.E−06 1.E−06<br>1.E−07 1.E−07<br>0 10 20 30 40 50 60 70 80 90 100 110 120 0 10 20 30 40 50 60 70 80 90 100 110 120<br>VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)<br>CURRENT (A) CURRENT (A)<br>, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD<br>iF iF<br>, INSTANTANEOUS REVERSE CURRENT (A) , INSTANTANEOUS REVERSE CURRENT (A)<br>IR IR<br>**----- End of picture text -----**<br>


**Figure 3. Typical Reverse Characteristics** 

**Figure 4. Maximum Reverse Characteristics** 

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10,000<br>TJ = 25 ° C<br>1000<br>100<br>10<br>0.1 1 10 100<br>VR, REVERSE VOLTAGE (V)<br>C, JUNCTION CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 5. Typical Junction Capacitance** 

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25<br>R � JC = 2.0  ° C/W<br>20 DC<br>15<br>Square Wave<br>10<br>5<br>0<br>80 90 100 110 120 130 140 150 160 170<br>TC, CASE TEMPERATURE ( ° C)<br>, AVERAGE FORWARD CURRENT (A)<br>IF(AV)<br>**----- End of picture text -----**<br>


**Figure 6. Current Derating** 

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**NTS12120EMFS, NRVTS12120EMFS** 

## **TYPICAL CHARACTERISTICS** 

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20<br>18 IPK/IAV = 20 IPK/IAV = 10 TJ = 175 ° C<br>16<br>14<br>IPK/IAV = 5<br>12<br>10<br>8<br>6 Square Wave<br>4<br>DC<br>2<br>0<br>0 1 2 3 4 5 6 7 8 9<br>IF(AV), AVERAGE FORWARD CURRENT (A)<br>, AVERAGE FORWARD<br>F(AV) POWER DISSIPATION (W)<br>P<br>**----- End of picture text -----**<br>


**Figure 7. Forward Power Dissipation** 

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100<br>50% Duty Cycle<br>20%<br>10 10%<br>5%<br>2%<br>1 1% Assumes 25 ° C ambient and soldered to<br>a 600 mm [2] − oz copper pad on PCB<br>0.1<br>Single Pulse<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>Figure 8. Thermal Characteristics<br>10<br>1<br>50% Duty Cycle<br>20%<br>10%<br>0.1 5%<br>2%<br>1%<br>Single Pulse<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>C/W)<br>°<br>R(t) (<br>C/W)<br>°<br>R(t) (<br>**----- End of picture text -----**<br>


**Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case** 

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**4** 

**NTS12120EMFS, NRVTS12120EMFS** 

## **PACKAGE DIMENSIONS** 

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DFN5 5x6, 1.27P<br>(SO−8FL)<br>2 X CASE 488AA NOTES:<br>1. DIMENSIONING AND TOLERANCING PER<br>0.20 C ISSUE H ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETER.<br>_ D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE<br>MOLD FLASH PROTRUSIONS OR GATE<br>2 B 2 X BURRS.<br>D1 MILLIMETERS<br>0.20 C<br>DIM MIN NOM MAX<br>fec t —= A 0.90 1.00 1.10<br>A1 0.00 −−− 0.05<br>E1 4 X b 0.33 0.41 0.51<br>c 0.23 0.28 0.33<br>E D 5.15 BSC<br>2 D1 4.70 4.90 5.10<br>c D2 3.80 4.00 4.20<br>A1 E 6.15 BSC<br>4 a = E1 5.70 5.90 6.10<br>1 2 3 4 E2 3.45 3.65 3.85<br>e 1.27 BSC<br>TOP VIEW G 0.51 0.61 0.71<br>3 X C K 1.20 1.35 1.50<br>0.10 C e SEATINGPLANE L1L 0.510.05 0.610.17 0.710.20<br>M 3.00 3.40 3.80<br>A DETAIL A 0  −−− 12<br>0.10 C STYLE 2:<br>PIN 1. ANODE<br>ne SIDE VIEW DETAIL A SOLDERING FOOTPRINT*  2. 3. ANODEANODE<br> 4. NO CONNECT<br>3X 4X  5. CATHODE<br>8X b 1.270 0.750<br>4X<br>0.10 C A B 1.000<br>0.05 c L e/2<br>P o r; 1 rT = 4 0.965 ~h obo bo<br>K<br>1.330 2X<br>f t TT 0.905<br>E2 2X<br>PIN 5 M 0.495 4.530<br>(EXPOSED PAD) L1<br>3.200<br>0.475<br>G Sc D2 and<br>2X<br>BOTTOM VIEW 1.530<br>4.560<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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