NTS10100MFST3G
Schottky Rectifier, 100 V, 10 A, Single, PowerSO, 8 Pins, 690 mV
- Manufacturer: ONSEMI
- Product type: Schottky Rectifier Diodes
- No. of Pins: 8Pins
- Qualification: AEC-Q101
- Diode Mounting: Surface Mount
- Diode Case Style: PowerSO
- Diode Configuration: Single
- Forward Voltage Max: 690mV
- Forward Surge Current: 200A
- Average Forward Current: 10A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 100V
| Delivery and price | |
|---|---|
| Units per pack | 75000 |
| Price | 0.317 € |
| Current stock | 10+ |
| Lead time | 30 days |
## NTS10100MFS, NRVTS10100MFS ## Very Low Forward Voltage Trench-based Schottky Rectifier **http://onsemi.com** ## **Features** - Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage - Fast Switching with Exceptional Temperature Stability - Low Power Loss and Lower Operating Temperature - Higher Efficiency for Achieving Regulatory Compliance **SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 100 VOLTS** - Low Thermal Resistance - High Surge Capability - NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These are Pb−Free and Halide−Free Devices ## **Typical Applications** - Switching Power Supplies including Notebook / Netbook Adapters, ATX and Flat Panel Display - High Frequency and DC−DC Converters - Freewheeling and OR−ing diodes - Reverse Battery Protection - Instrumentation **==> picture [181 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 1,2,3 5,6<br>MARKING<br>DIAGRAM<br>A C<br>1 A TH1010<br>AYWWZZ<br>SO−8 FLAT LEAD A<br>eo CASE 488AA Not Used C<br>STYLE 2<br>TH1010 = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>W = Work Week<br>ZZ = Lot Traceability<br>**----- End of picture text -----**<br> ## **Mechanical Characteristics:** - Case: Epoxy, Molded - Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. - Lead Finish: 100% Matte Sn (Tin) - Lead and Mounting SurfaceTemperature for Soldering Purposes: 260°C Max. for 10 Seconds - Device Meets MSL 1 Requirements ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |NTS10100MFST1G|SO−8 FL<br>(Pb−Free)|1500 /<br>Tape & Reel| |NTS10100MFST3G|SO−8 FL<br>(Pb−Free)|5000 /<br>Tape & Reel| |NRVTS10100MFST1G|SO−8 FL<br>(Pb−Free)|1500 /<br>Tape & Reel| |NRVTS10100MFST3G|SO−8 FL<br>(Pb−Free)|5000 /<br>Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: **NTS10100MFS/D** **1** © Semiconductor Components Industries, LLC, 2014 **April, 2014 − Rev. 0** **NTS10100MFS, NRVTS10100MFS** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|100|V| |Average Rectified Forward Current<br>(Rated VR, TC= 137°C)|IF(AV)|10|A| |Peak Repetitive Forward Current,<br>(Rated VR, Square Wave, 20 kHz, TC= 134°C)|IFRM|16|A| |Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|200|A| |Storage Temperature Range|Tstg|−65 to +150|°C| |Operating Junction Temperature|TJ|−55 to +150|°C| |Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)|EAS|100|mJ| |ESD Rating (Human Body Model)||3B|| |ESD Rating (Machine Model)||M4|| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Typ**|**Max**|**Unit**| |Thermal Resistance, Junction−to−Case, Steady State<br>(Assumes 600 mm21 oz. copper bond pad, on a FR4 board)|RθJC|2.0|−|°C/W| |**ELECTRICAL CHARACTERISTICS**||||| |Instantaneous Forward Voltage (Note 1)<br>(iF= 5 Amps, TJ= 25°C)<br>(iF= 10 Amps, TJ= 25°C)<br>(iF= 5 Amps, TJ= 125°C)<br>(iF= 10 Amps, TJ= 125°C)|vF|0.512<br>0.620<br>0.450<br>0.574|−<br>0.690<br>−<br>0.590|V| |Instantaneous Reverse Current (Note 1)<br>(VR= 70 V, TJ= 25°C)<br>(Rated dc Voltage, TJ= 25°C)<br>(VR= 70 V, TJ= 125°C)<br>(Rated dc Voltage, TJ= 125°C)|iR|7.0<br>15<br>4.0<br>10|−<br>70<br>−<br>35|�A<br>�A<br>mA<br>mA| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. **http://onsemi.com** **2** **NTS10100MFS, NRVTS10100MFS** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 382] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>TA = 125 ° C TA = 125 ° C<br>10 10<br>TA = 150 ° C T A = 25 ° C T A = 150 ° C TA = 25 ° C<br>1 1<br>T A = −55 ° C TA = −55 ° C<br>0.1 0.1<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>Figure 1. Typical Instantaneous Forward Figure 2. Maximum Instantaneous Forward<br>Characteristics Characteristics<br>1.E+00 1.E+00<br>1.E−01 1.E−01 TA = 150 ° C<br>TA = 150 ° C<br>1.E−02 1.E−02 TA = 125 ° C<br>1.E−03 TA = 125 ° C 1.E−03<br>1.E−04 1.E−04<br>TA = 25 ° C<br>1.E−05 1.E−05<br>TA = 25 ° C<br>1.E−06 1.E−06<br>1.E−07 1.E−07<br>0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100<br>VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)<br>CURRENT (A) CURRENT (A)<br>, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD<br>iF iF<br>, INSTANTANEOUS REVERSE CURRENT (A) , INSTANTANEOUS REVERSE CURRENT (A)<br>IR IR<br>**----- End of picture text -----**<br> **Figure 3. Typical Reverse Characteristics** **Figure 4. Maximum Reverse Characteristics** **==> picture [491 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 10,000 25<br>TJ = 25 ° C R � JC = 2.0 ° C/W<br>20<br>DC<br>15<br>1,000 Square Wave<br>10<br>5<br>100 0<br>0.1 1 10 100 110 120 130 140 150<br>VR, REVERSE VOLTAGE (R) TC, CASE TEMPERATURE ( ° C)<br>CURRENT (A)<br>, AVERAGE FORWARD<br>IF(AV)<br>C, JUNCTION CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 5. Typical Junction Capacitance** **Figure 6. Current Derating** **http://onsemi.com** **3** **NTS10100MFS, NRVTS10100MFS** ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 591] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>28 IPK/IAV = 20 IPK/IAV = 10 T J = 150 ° C<br>26<br>24<br>22<br>20 IPK/IAV = 5<br>18<br>16<br>14<br>12<br>10 Square Wave<br>8<br>6 DC<br>4<br>2<br>0<br>0 2 4 6 8 10 12 14<br>IF(AV), AVERAGE FORWARD CURRENT (A)<br>Figure 7. Forward Power Dissipation<br>100<br>50% Duty Cycle<br>20%<br>10%<br>10<br>5%<br>2% Assumes 25 ° C ambient and soldered<br>1%<br>1 to a 600 mm [2] − oz copper pad on PCB<br>0.1<br>Single Pulse<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>Figure 8. Thermal Characteristics<br>10<br>1<br>50% Duty Cycle<br>20%<br>10%<br>0.1 5%<br>2%<br>1%<br>Single Pulse<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>, AVERAGE FORWARD<br>F(AV) POWER DISSIPATION (W)<br>P<br>C/W)<br>°<br>R(t) (<br>C/W)<br>°<br>R(t) (<br>**----- End of picture text -----**<br> **Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case** **http://onsemi.com** **4** **NTS10100MFS, NRVTS10100MFS** ## **PACKAGE DIMENSIONS** **==> picture [471 x 459] intentionally omitted <==** **----- Start of picture text -----**<br> DFN5 5x6, 1.27P<br>(SO−8FL)<br>CASE 488AA<br>2 X ISSUE G NOTES:1. DIMENSIONING AND TOLERANCING PER<br>0.20 C ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETER.<br>oa D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE<br>MOLD FLASH PROTRUSIONS OR GATE<br>2 B 2 X BURRS.<br>D1 MILLIMETERS<br>0.20 C<br>DIM MIN NOM MAX<br>A 0.90 1.00 1.10<br>S | Fa n = A1 0.00 = −−− 0.05<br>E1 4 X b 0.33 0.41 0.51<br>c 0.23 0.28 0.33<br>E D 5.15 BSC<br>2 D1 4.50 4.90 5.10<br>c D2 3.50 −−− 4.22<br>A1 E 6.15 BSC<br>E1 5.50 5.80 6.10<br>1 2 3 4 E2 3.45 −−− 4.30<br>e 1.27 BSC<br>TOP VIEW G 0.51 0.61 0.71<br>3 X C K 1.20 1.35 1.50<br>0.10 C e SEATINGPLANE L1L 0.510.05 0.610.17 0.710.20<br>M 3.00 3.40 3.80<br>—. | A DETAIL A a 0 n −−− 12<br>0.10 C STYLE 2:<br>a PIN 1. ANODE<br>SIDE VIEW DETAIL A SOLDERING FOOTPRINT* 2. 3. ANODEANODE<br> 4. NO CONNECT<br>3X 4X 5. CATHODE<br>8X b 1.270 0.750<br>4X<br>0.10 C A B 1.000<br>0.05 c L e/2<br>te 1 e 4 0.965 dbo<br>K<br>1.330 TT 2X<br>ft tH 0.905<br>E2 2X<br>PIN 5 M 0.495 4.530<br>(EXPOSED PAD) L1<br>3.200<br>0.475<br>G ak D2 and<br>2X<br>BOTTOM VIEW 1.530<br>4.560<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br> **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **N. American Technical Support** : 800−282−9855 Toll Free USA/Canada **ON Semiconductor Website** : **www.onsemi.com** ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative **http://onsemi.com** **NTS10100MFS/D** **5**
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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