Image not available
Illustrative purposes only
NTMS10P02R2G
Power MOSFET, P Channel, 20 V, 8.8 A, 0.014 ohm, SOIC, Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Single MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:-8.8A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-8
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 1.6W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 4.5V
- Transistor Case Style: SOIC
- Drain Source Voltage Vds: 20V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 8.8A
- Drain Source On State Resistance: 0.014ohm
- Gate Source Threshold Voltage Max: 880mV
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.25 € |
| Current stock | 2500 |
| Lead time | 7 days |
Datasheet
|
|---|
Updated at February 27, 2026