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NTMFD4C86NT1G.
Dual MOSFET, N Channel, 30 V, 14.8 A, 0.0043 ohm, DFN, Surface Mount
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- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- No. of Pins: 8Pins
- Channel Type: N Channel
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 1.89W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.0043ohm
- Transistor Case Style: DFN
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 14.8A
- Power Dissipation N Channel: 1.89W
- Power Dissipation P Channel: 1.89W
- Gate Source Threshold Voltage Max: 2.2V
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 14.8A
- Continuous Drain Current Id P Channel: 14.8A
- Drain Source On State Resistance N Channel: 0.0043ohm
- Drain Source On State Resistance P Channel: 0.0043ohm
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 1.68 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## NTMFD4C86N ## PowerPhase, Dual N-Channel SO8FL **30 V, High Side 20 A / Low Side 32 A** ## **Features** - Co−Packaged Power Stage Solution to Minimize Board Space **www.onsemi.com** - Minimized Parasitic Inductances **==> picture [490 x 496] intentionally omitted <==** **----- Start of picture text -----**<br> Optimized Devices to Reduce Power Losses V(BR)DSS RDS(on) MAX ID MAX<br>These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS<br>-__} 5.4 m _} @ 10 V _<br>Compliant Q1 Top FET 20 A<br>30 V 8.1 m @ 4.5 V<br>Applications<br>Q2 Bottom 2.6 m @ 10 V<br>DC−DC Converters FET 32 A<br>30 V 3.4 m @ 4.5 V<br>System Voltage Rails a cee<br>Point of Load<br>D1 (3, 4, 9)<br>(1) G1<br>(2) S1<br>SW (5, 6, 7)<br>(8) G2<br>S2 (10)<br>Figure 1. Typical Application Circuit PIN CONNECTIONS<br>D1 4 5 SW<br>100<br>D1 3 9 10 6 SW<br>D1 S2<br>95 S1 2 7 SW<br>G1 1 8 G2<br>90 aee AllPet<br>(Bottom View)<br>85 Ala MARKING<br>DIAGRAM<br>80 PS V IN = 12 V 1 _.<br>VOUT = 1.2 V DFN8 4C86N<br>75 V GS = 5 V CASE 506CR AYWZZ<br>(aa TFASW = 25 = 300 kHz ° C > 1<br>70 ef i<br>0 5 10 15 20 25 4C86N = Specific Device Code<br>LOAD CURRENT (A) A = Assembly Location<br>Figure 2. Typical Efficiency Performance Y = Year<br>POWERPHASEGEVB Evaluation Board W = Work Week<br>ZZ = Lot Traceability<br>EFFICIENCY (%)<br>**----- End of picture text -----**<br> - Optimized Devices to Reduce Power Losses - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Applications** - DC−DC Converters - System Voltage Rails - Point of Load ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 10 of this data sheet. Publication Order Number: **NTMFD4C86N/D** **1** © Semiconductor Components Industries, LLC, 2016 **July, 2016 − Rev. 2** ## **NTMFD4C86N** ## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) |**MAXIMUM RATINGS**(TJ= 25°C unless otherwise stated)|**MAXIMUM RATINGS**(TJ= 25°C unless otherwise stated)|||||| |---|---|---|---|---|---|---| |**Parameter**||||**Symbol**|**Value**|**Unit**| |Drain−to−Source Voltage|||Q1|VDSS|30|V| |Drain−to−Source Voltage|||Q2|||| |Gate−to−Source Voltage|||Q1|VGS|±20|V| |Gate−to−Source Voltage|||Q2|||| |Continuous Drain Current R�JA(Note 1)|Steady<br>State|TA= 25°C|Q1|ID|14.8|A| |||TA= 85°C|||10.7|| |||TA= 25°C|Q2||23.7|| |||TA= 85°C|||17.1|| |Power Dissipation<br>R�JA(Note 1)||TA= 25°C|Q1|PD|1.89|W| ||||Q2|||| |Continuous Drain Current R�JA ≤10 s (Note 1)||TA= 25°C|Q1|ID|20.2|A| |||TA= 85°C|||14.5|| |||TA= 25°C|Q2||32.3|| |||TA= 85°C|||23.3|| |Power Dissipation<br>R�JA ≤10 s (Note 1)||TA= 25°C|Q1|PD|3.51|W| ||||Q2|||| |Continuous Drain Current<br>R�JA(Note 2)||TA= 25°C|Q1|ID|11.3|A| |||TA= 85°C|||8.1|| |||TA= 25°C|Q2||18.1|| |||TA= 85°C|||13.0|| |Power Dissipation<br>R�JA(Note 2)||TA= 25°C|Q1|PD|1.10|W| ||||Q2|||| |Pulsed Drain Current||TA= 25°C<br>tp= 10�s|Q1|IDM|160|A| ||||Q2||280|| |Operating Junction and Storage Temperature|||Q1|TJ, TSTG|−55 to +150|°C| ||||Q2|||| |Source Current (Body Diode)|||Q1|IS|10|A| ||||Q2||10|| |Drain to Source DV/DT||||dV/dt|6|V/ns| |Single Pulse Drain−to−Source Avalanche Energy (TJ= 25°C,<br>VDD= 50 V, VGS= 10 V, L = 0.1 mH, RG= 25�)||IL= 20 Apk|Q1|EAS|20|mJ| |||IL= 40 Apk|Q2|EAS|80|| |Lead Temperature for Soldering Purposes<br>(1/8” from case for 10 s)||||TL|260|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm[2] . **www.onsemi.com** **2** **NTMFD4C86N** ## **THERMAL RESISTANCE MAXIMUM RATINGS** |**THERMAL RESISTANCE MAXIMUM RATINGS**|||| |---|---|---|---| |**Parameter**|**Symbol**|**Value**|**Unit**| |Junction−to−Case (Top) – Steady State (Note 3)|R�JC|3.3|°C/W| |Junction−to−Ambient – Steady State (Note 3)|R�JA|66.0|| |Junction−to−Ambient – Steady State (Note 4)|R�JA|113.7|| |Junction−to−Ambient – (t≤10 s) (Note 3)|R�JA|35.6|| 3. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm[2] . ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTE**|**RISTIC**|**S**(TJ= 25°C|unless otherwise specified)|unless otherwise specified)||||| |---|---|---|---|---|---|---|---|---| |**Parameter**|**FET**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||||||| |Drain−to−Source Break-<br>down Voltage|Q1|V(BR)DSS|VGS= 0 V, I|D= 250�A|30|||V| ||Q2||||30|||| |Drain−to−Source Break-<br>down Voltage Temperature<br>Coefficient|Q1|V(BR)DSS<br>/ TJ||||17||mV /<br>°C| ||Q2|||||16.5||| |Zero Gate Voltage Drain<br>Current|Q1|IDSS|VGS= 0 V,<br>VDS= 24 V|TJ= 25°C|||1|�A| |||||TJ= 125°C|||10|| ||Q2||VGS= 0 V,<br>VDS= 24 V|TJ= 25°C|||1|| |Gate−to−Source Leakage<br>Current|Q1|IGSS|VGS= 0 V, VDS =±20 V||||100|nA| ||Q2||||||100|| |**ON CHARACTERISTICS**(Note 5)||||||||| |Gate Threshold Voltage|Q1|VGS(TH)|VGS= VDS, ID= 250�A||1.3||2.2|V| ||Q2||||1.3||2.2|| |Negative Threshold Temper-<br>ature Coefficient|Q1|VGS(TH)/<br>TJ||||4.5||mV /<br>°C| ||Q2|||||4.6||| |Drain−to−Source On Resist-<br>ance|Q1|RDS(on)|VGS= 10 V|ID= 30 A||4.3|5.4|m�| ||||VGS= 4.5 V|ID= 18 A||6.5|8.1|| ||Q2||VGS= 10 V|ID= 30 A||1.7|2.6|| ||||VGS= 4.5 V|ID= 12.5 A||2.4|3.4|| |**CAPACITANCES**||||||||| |Input Capacitance|Q1|CISS|VGS= 0 V, f = 1 MHz, VDS= 15 V|||1153||pF| ||Q2|||||3050||| |Output Capacitance|Q1|COSS||||532||| ||Q2|||||1650||| |Reverse Capacitance|Q1|CRSS||||107||| ||Q2|||||77||| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com** **3** ## **NTMFD4C86N** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTE**|**RISTIC**|**S**(TJ= 25°C|unless otherwise specified)|unless otherwise specified)||||| |---|---|---|---|---|---|---|---|---| |**Parameter**|**FET**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**CHARGES, CAPACITANCES**|**& GATE RESISTANCE**|||||||| |Total Gate Charge|Q1|QG(TOT)|VGS= 4.5 V, VDS= 15 V; ID= 30 A|||10.9||nC| ||Q2|||||21.6||| |Threshold Gate Charge|Q1|QG(TH)||||1.2||| ||Q2|||||1.4||| |Gate−to−Source Charge|Q1|QGS||||3.4||| ||Q2|||||8.6||| |Gate−to−Drain Charge|Q1|QGD||||5.4||| ||Q2|||||5.5||| |Total Gate Charge|Q1|QG(TOT)|VGS= 10 V, VDS= 15 V; ID= 30 A|||22.2||nC| ||Q2|||||47.5||| |Gate Resistance|Q1|RG|TA= 25°C|||1.0||�| ||Q2|||||1.0||| |**SWITCHING CHARACTERISTICS**(Note 6)||||||||| |Turn−On Delay Time|Q1|td(ON)|VGS= 4.5 V, VDS= 15 V,<br>ID= 15 A, RG= 3.0�|||8.9||ns| ||Q2|||||8.3||| |Rise Time|Q1|tr||||21.2||| ||Q2|||||15.1||| |Turn−Off Delay Time|Q1|td(OFF)||||15.3||| ||Q2|||||19.3||| |Fall Time|Q1|tf||||4.4||| ||Q2|||||4.2||| |**SWITCHING CHARACTERISTICS**(Note 6)||||||||| |Turn−On Delay Time|Q1|td(ON)|VGS= 10 V, VDS= 15 V,<br>ID= 15 A, RG= 3.0�|||6.7||ns| ||Q2|||||6.3||| |Rise Time|Q1|tr||||19.5||| ||Q2|||||13.8||| |Turn−Off Delay Time|Q1|td(OFF)||||20.1||| ||Q2|||||22.8||| |Fall Time|Q1|tf||||2.8||| ||Q2|||||3.2||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||| |Forward Voltage|Q1|VSD|VGS= 0 V,<br>IS= 10 A|TJ= 25°C||0.80||V| |||||TJ= 125°C||0.60||| ||Q2||VGS= 0 V,<br>IS= 10 A|TJ= 25°C||0.78||| |||||TJ= 125°C||0.62||| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com** **4** ## **NTMFD4C86N** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTE**|**RISTIC**|**S**(TJ= 25°C|unless otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**FET**|**Symbol**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Reverse Recovery Time|Q1|tRR|VGS= 0 V, dIS/dt= 100 A/�s, IS= 30 A||29.1||ns| ||Q2||||33.7||| |Charge Time|Q1|ta|||14.5||| ||Q2||||17.4||| |Discharge Time|Q1|tb|||14.6||| ||Q2||||16.3||| |Reverse Recovery Charge|Q1|QRR|||21||nC| ||Q2||||27.5||| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com** **5** **NTMFD4C86N** ## **TYPICAL CHARACTERISTICS − Q1** **==> picture [491 x 611] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>4.5 V to 10 V 4.0 V<br>90 T J = 25 ° C 3.8 V 90 V DS = 3 V<br>80 80<br>70 3.6 V 70<br>60 60<br>3.4 V<br>50 50<br>40 3.2 V 40<br>30 30<br>3.0 V<br>20 2.8 V 20 T J = 125 ° C<br>10 V GS = 2.6 V 10 TJ = 25 ° C T J = −55 ° C<br>0 0<br>0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 3. On−Region Characteristics Figure 4. Transfer Characteristics<br>0.026 0.009<br>0.024<br>0.022 I D = 30 A 0.008 T J = 25 ° C<br>0.020<br>VGS = 4.5 V<br>0.018 0.007<br>0.016<br>0.014 0.006<br>0.012<br>0.010 0.005<br>VGS = 10 V<br>0.008<br>0.006 0.004<br>0.004<br>0.002 0.003<br>3 4 5 6 7 8 9 10 10 20 30 40 50 60 70<br>VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 5. On−Resistance vs. Gate−to−Source Figure 6. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>1.7 2000<br>1.6 VGS = 10 V 1800 V GS = 0 V<br>1.5 ID = 30 A 1600 T J = 25 ° C<br>f = 1 MHz<br>1.4 1400<br>Ciss<br>1.3 1200<br>1.2 1000<br>1.1 800 C oss<br>1.0 600<br>0.9 400<br>0.8 200 Crss<br>0.7 0<br>−50 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 30<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (<br>DS(on) DS(on)<br>R R<br>) �<br>, NORMALIZED DRAIN−TO− SOURCE RESISTANCE ( C, CAPACITANCE (pF)<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Figure 7. On−Resistance Variation with Temperature** **Figure 8. Capacitance Variation** **www.onsemi.com** **6** **NTMFD4C86N** ## **TYPICAL CHARACTERISTICS − Q1** **==> picture [236 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 12<br>QT<br>10<br>VGS = 45 V<br>VDS = 15 V<br>8<br>ID = 30 A<br>TJ = 25 ° C<br>6<br>4<br>QGS QGD<br>2<br>0<br>0 2 4 6 8 10<br>QG, TOTAL GATE CHARGE (nC)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br> **Figure 9. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** **==> picture [240 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>18 T J = 25 ° C<br>16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9<br>VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br> **Figure 10. Diode Forward Voltage vs. Current** **==> picture [491 x 387] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 1000<br>VGS = 10 V VGS ≤ 10 V<br>I VD DS = 15 A = 15 V Single Pulse TC = 25 ° C<br>100<br>td(off)<br>100 10 � s<br>tf<br>tr 10 100 1 ms � s<br>10 ms<br>10 t d(on)<br>1<br>RDS(on) Limit<br>Thermal Limit<br>Package Limit dc<br>1 0.1<br>1 10 100 0.1 1 10 100<br>RG, GATE RESISTANCE ( � ) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 11. Resistive Switching Time Variation Figure 12. Maximum Rated Forward Biased<br>vs. Gate Resistance Safe Operating Area<br>100<br>50% Duty Cycle<br>10<br>20%<br>10%<br>5%<br>1 2%<br>1%<br>0.1<br>PCB Cu Area 650 mm [2]<br>Single Pulse<br>0.01 PCB Cu thk 1 oz<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>t, TIME (ns)<br>, DRAIN CURRENT (A)<br>ID<br>C/W)<br>°<br>R(t) (<br>**----- End of picture text -----**<br> **Figure 13. Thermal Characteristics** **www.onsemi.com** **7** **NTMFD4C86N** ## **TYPICAL CHARACTERISTICS − Q2** **==> picture [491 x 601] intentionally omitted <==** **----- Start of picture text -----**<br> 160 160<br>3.6 V 3.4 V TJ = 25 ° C VDS = 3 V<br>140 140<br>3.2 V<br>120 3.8 V to 10 V 120<br>100 100<br>3.0 V<br>80 80<br>60 60<br>2.8 V<br>40 40 TJ = 125 ° C<br>20 VGS = 2.4 V2.6 V 20 T J = 25 ° C TJ = −55 ° C<br>0 0<br>0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 14. On−Region Characteristics Figure 15. Transfer Characteristics<br>4.5 3.0<br>ID = 30 A TJ = 25 ° C<br>4.0 VGS = 4.5 V<br>2.5<br>3.5<br>3.0 2.0<br>VGS = 10 V<br>2.5<br>1.5<br>2.0<br>1.0<br>1.5<br>1.0<br>0.5<br>2 3 4 5 6 7 8 9 10 0 25 50 75 100 125 150<br>VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 16. On−Resistance vs. Gate−to−Source Figure 17. On−Resistance vs. Drain Current<br>Voltage and Gate Voltage<br>1.8 10000<br>VGS = 10 V<br>1.6 ID = 30 A Ciss<br>1.4<br>1.2 1000 Coss<br>1.0<br>0.8<br>0.6 100 Crss<br>0.4<br>VGS = 0 V<br>0.2 TJ = 25 ° C<br>f = 1 MHz<br>0 10<br>−50 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 30<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>(m (m<br>, DRAIN−TO−SOURCE RESISTANCE , DRAIN−TO−SOURCE RESISTANCE<br>DS(on) DS(on)<br>R R<br>) �<br>, NORMALIZED DRAIN−TO− C, CAPACITANCE (pF)<br>SOURCE RESISTANCE (m<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [172 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 18. On−Resistance Variation with<br>Temperature<br>**----- End of picture text -----**<br> **Figure 19. Capacitance Variation** **www.onsemi.com** **8** **NTMFD4C86N** ## **TYPICAL CHARACTERISTICS − Q2** **==> picture [489 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 12 1.00E+06<br>VGS = 0 V<br>QT<br>10 1.00E+05<br>TJ = 150 ° C<br>8 1.00E+04 TJ = 125 ° C<br>6 1.00E+03 TJ = 85 ° C<br>4 1.00E+02<br>QGS QGD VGS = 4.5 V<br>2 VDS = 15 V 1.00E+01<br>ID = 30 A<br>TJ = 25 ° C<br>0 1.00E+00<br>0 4 8 12 16 20 0 5 10 15 20 25 30 35<br>QG, TOTAL GATE CHARGE (nC) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, LEAKAGE (nA)<br>IDSS<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br> **Figure 20. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** **Figure 21. Drain−to−Source Leakage Current vs. Voltage** **==> picture [242 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>18 T J = 25 ° C<br>16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9<br>VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br> **Figure 22. Diode Forward Voltage vs. Current** **www.onsemi.com** **9** **NTMFD4C86N** ## **TYPICAL CHARACTERISTICS − Q2** **==> picture [491 x 387] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 1000<br>VGS = 10 V VGS ≤ 10 V<br>I VD DS = 15 A = 15 V t d(off) Single Pulse TC = 25 ° C<br>100<br>10 � s<br>100<br>tf 100 � s<br>tr 10 1 ms<br>td(on) 10 ms<br>10<br>1<br>RDS(on) Limit<br>Thermal Limit<br>Package Limit dc<br>1 0.1<br>1 10 100 0.1 1 10 100<br>RG, GATE RESISTANCE ( � ) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 23. Resistive Switching Time Variation Figure 24. Maximum Rated Forward Biased<br>vs. Gate Resistance Safe Operating Area<br>100<br>50% Duty Cycle<br>10<br>20%<br>10%<br>5%<br>1 2%<br>1%<br>0.1<br>PCB Cu Area 650 mm [2]<br>Single Pulse<br>0.01 PCB Cu thk 1 oz<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>t, TIME (ns)<br>, DRAIN CURRENT (A)<br>ID<br>C/W)<br>°<br>R(t) (<br>**----- End of picture text -----**<br> **Figure 25. Thermal Characteristics** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**†| |NTMFD4C86NT1G|DFN8<br>(Pb−Free)|1500 / Tape & Reel| |NTMFD4C86NT3G|DFN8<br>(Pb−Free)|5000 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **www.onsemi.com** **10** **NTMFD4C86N** ## **PACKAGE DIMENSIONS** **DFN8 5x6, 1.27P PowerPhase FET** CASE 506CR ISSUE C **==> picture [460 x 501] intentionally omitted <==** **----- Start of picture text -----**<br> 2X<br>NOTES:<br>0.20 C 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>D A 3. DIMENSIONS b AND b1 APPLY TO PLATED TERMINAL AND ARE<br>MEASURED BETWEEN 0.15 AND 0.25 MM FROM THE TIPS.<br>8 7 D16 5 B 2X 0.20 C 4.5. COPLANARITY APPLIES TO THE EXPOSED PADS AS WELL AS THETERMINALS.DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED<br>AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST<br>POINT ON THE PACKAGE BODY.<br>PIN ONE E1 E MILLIMETERS<br>IDENTIFIER ÉÉ 4X DIMA MIN 0.90 MAX 1.10<br>h A1 0.00 0.05<br>b 0.40 0.60<br>ÉÉ<br>b2 0.40 0.60<br>1 2 3 4 c A1 c 0.20 0.30<br>D 5.15 BSC<br>TOP VIEW D1 4.90 5.10<br>D2 3.70 3.90<br>0.10 C A D3 2.96 3.16<br>E 6.15 BSC<br>DETAIL A E1 5.80 6.00<br>E2 2.37 2.57<br>0.10 C E3 1.05 1.25<br>NOTE 4 C [SEATING] PLANE E4 1.36 1.56<br>SIDE VIEW DETAIL A NOTE 6 Ge 0.625 BSC1.27 BSC<br>G1 1.615 BSC<br>h −−− 12 �<br>8X b L 0.34 0.59<br>0.10 M C A B 0.10 M C A B L2 1.68 1.93<br>D2<br>0.05 M C NOTE 3<br>1 1<br>E3<br>5X L 6X b2 0.10 M C A B<br>G1<br>E2<br>E4 G<br>RECOMMENDED<br>L2 SOLDERING FOOTPRINT*<br>e/2 D3 5.50<br>e SUPPLEMENTAL 4.05<br>BOTTOM VIEW BOTTOM VIEW 1.27<br>PITCH 5X<br>0.75<br>0.62 0.54<br>2.07<br>1.22<br>2.67<br>6.50<br>1.66 5X<br>0.76 0.71 2.31<br>0.23<br>0.98 6X<br>0.65<br>4.10<br>DIMENSION: MILLIMETERS<br>**----- End of picture text -----**<br> 3. DIMENSIONS b AND b1 APPLY TO PLATED TERMINAL AND ARE MEASURED BETWEEN 0.15 AND 0.25 MM FROM THE TIPS. 6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST POINT ON THE PACKAGE BODY. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **www.onsemi.com** **11** **NTMFD4C86N** ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com **N. American Technical Support** : 800−282−9855 Toll Free USA/Canada **ON Semiconductor Website** : **www.onsemi.com** **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit Phone: 421 33 790 2910 **Japan Customer Focus Center** For additional information, please contact your local Phone: 81−3−5817−1050 Sales Representative **NTMFD4C86N/D** **www.onsemi.com** **12**
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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