NTMFD4C85NT1G.

Dual MOSFET, N Channel, 30 V, 20.1 A, 0.0022 ohm, DFN, Surface Mount

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Manufacturer: ONSEMI
Product type: Dual MOSFETs
No. of Pins: 8Pins
Channel Type: N Channel
Transistor Mounting: Surface Mount
Transistor Polarity: N Channel
Power Dissipation Pd: 1.95W
Rds(on) Test Voltage: 10V
On Resistance Rds(on): 0.0022ohm
Transistor Case Style: DFN
Drain Source Voltage Vds: 30V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 20.1A
Power Dissipation N Channel: 1.95W
Power Dissipation P Channel: 1.95W
Gate Source Threshold Voltage Max: 2.1V
Drain Source Voltage Vds N Channel: 30V
Drain Source Voltage Vds P Channel: 30V
Continuous Drain Current Id N Channel: 20.1A
Continuous Drain Current Id P Channel: 20.1A
Drain Source On State Resistance N Channel: 0.0022ohm
Drain Source On State Resistance P Channel: 0.0022ohm

Delivery and price
Units per pack	500
Price	1.5 €
Current stock	10+
Lead time	30 days

Datasheet

## NTMFD4C85N 

## PowerPhase, Dual N-Channel SO8FL **30 V, High Side 25 A / Low Side 49 A** 

## **Features** 

- Co−Packaged Power Stage Solution to Minimize Board Space 

## **www.onsemi.com** 

- Minimized Parasitic Inductances 

- Optimized Devices to Reduce Power Losses 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Applications** 

- DC−DC Converters 

- System Voltage Rails 

- Point of Load 

**Figure 1. Typical Application Circuit** 

**==> picture [232 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>95<br>90 ee<br>TE<br>85 ae<br>80 fo V IN  = 12 V<br>VOUT = 1.2 V<br>75 Pho V GS  = 5 V<br>FSW = 300 kHz<br>70 (io TA = 25 ° C<br>0 5 10 15 20 25 30<br>LOAD CURRENT (A)<br>EFFICIENCY (%)<br>**----- End of picture text -----**<br>


**Figure 2. Typical Efficiency Performance POWERPHASEGEVB Evaluation Board** 

**==> picture [190 x 494] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS RDS(ON) MAX ID MAX<br>ee ee ee<br>3.0 m  @ 10 V<br>Q1 Top FET 25 A<br>30 V 4.3 m  @ 4.5 V<br>ee<br>0.8 m  @ 10 V<br>Q2 Bottom FET<br>49 A<br>30 V 1.2 m  @ 4.5 V<br>ee ee ee<br>D1 (3, 4, 9)<br>(1) G1<br>(2) S1<br>SW (5, 6, 7)<br>(8) G2<br>S2 (10)<br>PIN CONNECTIONS<br>D1 4 5 SW<br>D1 3 9 10 6 SW<br>D1 S2<br>S1 2 7 SW<br>G1 1 8 G2<br>All<br>a<br>(Bottom View)<br>MARKING<br>DIAGRAM<br>1<br>DFN8 4C85N<br>CASE 506CR - AYWZZ<br>1<br>2 | |<br>4C85N = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>W = Work Week<br>ZZ = Lot Traceability<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 11 of this data sheet. 

Publication Order Number: **NTMFD4C85N/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **February, 2016 − Rev. 2** 

**NTMFD4C85N** 

**Table 1. MAXIMUM RATINGS** (TJ=25 ° C unless otherwise stated) 

|**Table 1. MAXIMUM RATINGS**(TJ=25°C unless otherwise stat|**Table 1. MAXIMUM RATINGS**(TJ=25°C unless otherwise stat|ed)|||||
|---|---|---|---|---|---|---|
|**Parameter**||||**Symbol**|**Value**|**Units**|
|Drain−to−Source Voltage|||Q1|VDSS|30|V|
||||Q2||||
|Gate−to−Source Voltage|||Q1|VGS|±20|V|
||||Q2||||
|Continuous Drain Current RθJA(Note 1)|Steady<br>State|TA= 25°C|Q1|ID|20.1|A|
|||TA= 85°C|||14.5||
|||TA= 25°C|Q2||39||
|||TA= 85°C|||28.1||
|Power Dissipation<br>RθJA(Note 1)||TA= 25°C|Q1|PD|1.95|W|
||||Q2||||
|Continuous Drain Current RθJA≤10 s (Note 1)||TA= 25°C|Q1|ID|25.4|A|
|||TA= 85°C|||18.3||
|||TA= 25°C|Q2||49.2||
|||TA= 85°C|||35.5||
|Power Dissipation<br>RθJA≤ 10 s(Note 1)||TA= 25°C|Q1|PD|3.10|W|
||||Q2||||
|Continuous Drain Current<br>RθJA(Note 2)||TA= 25°C|Q1|ID|15.4|A|
|||TA= 85°C|||11.1||
|||TA= 25°C|Q2||29.7||
|||TA= 85°C|||21.4||
|Power Dissipation<br>RθJA(Note 2)||TA= 25°C|Q1|PD|1.13|W|
||||Q2||||
|Continuous Drain Current<br>RθJC||TC= 25°C|Q1|ID|67|A|
||||Q2||174||
|Power Dissipation<br>RθJC|||Q1|PD|22|W|
||||Q2||40||
|Pulsed Drain Current||TA= 25°C<br>tp = 10�s|Q1|IDM|300|A|
||||Q2||525||
|Operating Junction and Storage Temperature|||Q1|TJ, TSTG|−55 to +150|°C|
||||Q2||||
|Source Current (Body Diode)|||Q1|IS|10|A|
||||Q2||10||
|Drain to Source DV/DT||||dV/dt|6|V/ns|
|Single Pulse Drain−to−Source Avalanche Energy (TJ= 25°C,<br>VDD= 50 V, VGS= 10 V, L = 0.1 mH, RG= 25�)||IL= 19 Apk|Q1|EAS|34.5|mJ|
|||IL= 26 Apk|Q2|EAS|222||
|Lead Temperature for Soldering Purposes (1/8″from case for 10 s)||||TL|260|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 

2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm[2] . 

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**2** 

**NTMFD4C85N** 

## **Table 2. THERMAL RESISTANCE MAXIMUM RATINGS** 

|**Table 2. THERMAL RESISTANCE MAXIMUM RATINGS**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Units**|
|Junction−to−Ambient – Steady State (Note 3)|RθJA|64.2|°C/W|
|Junction−to−Ambient – Steady State (Note 4)||110.5||
|Junction−to−Ambient – (t≤10 s) (Note 3)||40.3||
|Junction−to−Case (bottom) – Steady State Q1|RθJC|5.6|°C/W|
|Junction−to−Case (bottom) – Steady State Q2||3.1||



3. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu 

4. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm[2] 

**Table 3. ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**Table 3. ELECTRICAL CHARA**|**CTERISTICS**|(TJ= 25|°C unless otherwise specified)|°C unless otherwise specified)|||||
|---|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**FET**|**Test Condition**||**Min**|**Typ**|**Max**|**Units**|
|**OFF CHARACTERISTICS**|||||||||
|Drain−to−Source Breakdown<br>Voltage|V(BR)DSS|Q1|VGS= 0 V,|ID= 250�A|30|||V|
|||Q2|||30||||
|Drain−to−Source Breakdown<br>Voltage Temperature Coefficient|V(BR)DSS/ TJ|Q1||||19||mV/°C|
|||Q2||||17|||
|Zero Gate Voltage Drain Current|IDSS|Q1|VGS= 0 V,<br>VDS= 24 V|TJ= 25°C|||1|�A|
|||||TJ= 125°C|||10||
|||Q2||TJ= 25°C|||1||
|Gate−to−Source Leakage Current|IGSS|Q1|VDS <br>VGS=|= 0 V,<br>20 V|||100|nA|
|||Q2|||||100||
|**ON CHARACTERISTICS**(Note 5)|||||||||
|Gate Threshold Voltage|VGS(TH)|Q1|VGS= VDS, ID= 250�A||1.3||2.1|V|
|||Q2|||1.3||2.1||
|Negative Threshold Temperature<br>Coefficient|VGS(TH)/ TJ|Q1||||4.3||mV/°C|
|||Q2||||4.6|||
|Drain−to−Source On Resistance|RDS(on)|Q1|VGS= 10 V|ID= 20 A||2.2|3.0|m�|
||||VGS= 4.5 V|ID= 20 A||3.3|4.3||
|||Q2|VGS= 10 V|ID= 30 A||0.6|0.8||
||||VGS= 4.5 V|ID= 30 A||0.95|1.2||
|**CAPACITANCES**|||||||||
|Input Capacitance|CISS|Q1|VGS= 0 V, f = 1|MHz, VDS= 15 V||1960||pF|
|||Q2||||6660|||
|Output Capacitance|COSS|Q1||||1230|||
|||Q2||||3660|||
|Reverse Capacitance|CRSS|Q1||||102|||
|||Q2||||126|||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

5. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2% 

6. Switching characteristics are independent of operating junction temperatures 

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**3** 

## **NTMFD4C85N** 

**Table 3. ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**Table 3. ELECTRICAL CHARA**|**CTERISTICS**|(TJ= 25|°C unless otherwise specified)|°C unless otherwise specified)|||||
|---|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**FET**|**Test Condition**||**Min**|**Typ**|**Max**|**Units**|
|**CHARGES & GATE RESISTANCE**|||||||||
|Total Gate Charge|QG(TOT)|Q1|VGS= 4.5 V, VDS= 15 V; ID= 20 A|||15||nC|
|||Q2||||45.2|||
|Threshold Gate Charge|QG(TH)|Q1||||1.5|||
|||Q2||||4.5|||
|Gate−to−Source Charge|QGS|Q1||||5.0|||
|||Q2||||15|||
|Gate−to−Drain Charge|QGD|Q1||||5.2|||
|||Q2||||11.8|||
|Total Gate Charge|QG(TOT)|Q1|VGS= 10 V, VDS= 15 V; ID= 20 A|||32||nC|
|||Q2||||99.3|||
|Gate Resistance|RG|Q1|TA= 25°C|||1.0||�|
|||Q2||||1.0|||
|**SWITCHING CHARACTERISTICS**|(Note 6)||||||||
|Turn−On Delay Time|td(ON)|Q1|VGS= 4.5 V, VDS= 15 V,<br>ID= 20 A, RG= 3.0�|||10.3||ns|
|||Q2||||19.5|||
|Rise Time|tr|Q1||||37|||
|||Q2||||27|||
|Turn−Off Delay Time|td(OFF)|Q1||||20|||
|||Q2||||47|||
|Fall Time|tf|Q1||||5.6|||
|||Q2||||15|||
|**SWITCHING CHARACTERISTICS**|(Note 6)||||||||
|Turn−On Delay Time|td(ON)|Q1|VGS= 10 V,<br>ID= 20 A,|VDS= 15 V,<br>RG= 3.0�||8.0||ns|
|||Q2||||12.6|||
|Rise Time|tr|Q1||||31.5|||
|||Q2||||22.7|||
|Turn−Off Delay Time|td(OFF)|Q1||||25|||
|||Q2||||60|||
|Fall Time|tf|Q1||||4.0|||
|||Q2||||12.2|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||||
|Forward Voltage|VSD|Q1|VGS= 0 V,<br>IS= 10 A|TJ= 25°C||0.78||V|
|||||TJ= 125°C||0.62|||
|||Q2|VGS= 0 V,<br>IS= 10 A|TJ= 25°C||0.75|||
|||||TJ= 125°C||0.55|||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

5. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2% 

6. Switching characteristics are independent of operating junction temperatures 

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**4** 

## **NTMFD4C85N** 

**Table 3. ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**Table 3. ELECTRICAL CHARA**|**CTERISTICS**|(TJ= 25|°C unless otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**FET**|**Test Condition**|**Min**|**Typ**|**Max**|**Units**|
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Reverse Recovery Time|tRR|Q1|VGS= 0 V, dIS/dt = 100 A/�s,<br>IS= 2 A||40||ns|
|||Q2|||73|||
|Charge Time|ta|Q1|||20|||
|||Q2|||40|||
|Discharge Time|tb|Q1|||20|||
|||Q2|||33|||
|Reverse Recovery Charge|QRR|Q1|||37||nC|
|||Q2|||137|||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

5. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2% 

6. Switching characteristics are independent of operating junction temperatures 

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**5** 

**NTMFD4C85N** 

## **TYPICAL CHARACTERISTICS − Q1** 

**==> picture [490 x 591] intentionally omitted <==**

**----- Start of picture text -----**<br>
160 160<br>3.8 V VGS = 3.6 V VDS = 3 V<br>140 140<br>4.0 V − 10 V<br>120 T J  = 25 ° C 3.4 V 120<br>100 100<br>3.2 V<br>80 80<br>60 3.0 V 60<br>40 40 25 ° C<br>2.8 V<br>20 2.6 V 2.4 V 20 125 ° C −55 ° C<br>0 0<br>0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 3. On−Region Characteristics Figure 4. Transfer Characteristics<br>10 6<br>9<br>8 T J = 25 ° C 5<br>ID = 20 A<br>7 4<br>VGS = 4.5 V<br>6<br>3<br>5<br>V GS  = 10 V<br>4 2<br>3<br>1 T J  = 25 ° C<br>2<br>1 0<br>2 3 4 5 6 7 8 9 10 10 20 30 40 50 60 70 80<br>VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 5. On−Resistance vs. Gate−to−Source Figure 6. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>1.8 4000<br>1.6 V GS  = 10 V 3500 VGS = 0 V<br>I D  = 20 A TJ = 25 ° C<br>1.4 3000 f = 1 MHz<br>1.2 2500<br>CISS<br>1.0 2000<br>0.8 1500 C OSS<br>0.6 1000<br>0.4 500<br>CRSS<br>0.2 0<br>−50 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 30<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>IDS IDS<br>) � ) �<br>, DRAIN−TO−SOURCE , DRAIN−TO−SOURCE<br>RESISTANCE (m RESISTANCE (m<br>DS(on) DS(on)<br>R R<br>C)<br>°<br> (Normalized to 25 C, CAPACITANCE (pF)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Figure 7. On−Resistance Variation with Temperature** 

**Figure 8. Capacitance Variation** 

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**6** 

**NTMFD4C85N** 

## **TYPICAL CHARACTERISTICS − Q1** 

**==> picture [490 x 586] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 10<br>VVGS DS  = 15 V = 10 V 9 T J  = 25 ° C<br>I D  = 20 A t d(off) 8<br>100 tf 7<br>6<br>t r<br>5<br>4<br>10 t d(on)<br>3<br>2<br>1<br>1 0<br>1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 9. On−Region Characteristics Figure 10. Diode Forward Voltage vs. Current<br>12 1.0E+05<br>10 QT VGS = 0 V TJ = 150 ° C<br>1.0E+04<br>TJ = 125 ° C<br>8<br>1.0E+03<br>6 TJ = 85 ° C<br>1.0E+02<br>4<br>QGS QGD VGS = 10 V<br>2 V DS = 15 V 1.0E+01<br>ID = 20 A<br>TJ = 25 ° C<br>0 1.0E+00<br>0 3 6 9 12 15 0 5 10 15 20 25 30<br>QG, TOTAL GATE CHARGE (nC) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 11. Gate−to−Source and Figure 12. Drain−to−Source Leakage Current<br>Drain−to−Source Voltage vs. Total Charge vs. Voltage<br>1000<br>VGS ≤  10 V<br>Single Pulse<br>TC = 25 ° C 10  � s<br>100<br>100  � s<br>1 ms<br>10<br>10 ms<br>1<br>RDS(on) Limit<br>Thermal Limit<br>Package Limit dc<br>0.1<br>0.1 1 10 100<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>IS<br>, LEAKAGE (nA)<br>IDSS<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 13. Maximum Rated Forward Biased Safe Operating Area** 

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**7** 

**NTMFD4C85N** 

## **TYPICAL CHARACTERISTICS − Q1** 

**==> picture [490 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>50% Duty Cycle<br>10<br>20%<br>10%<br>5%<br>1<br>2%<br>1%<br>0.1<br>PCB Cu Area 650 mm [2]<br>0.01 PCB Cu thk 1 oz<br>Single Pulse<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>C/W)<br>°<br>R(t) (<br>**----- End of picture text -----**<br>


**Figure 14. Thermal Characteristics** 

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**8** 

**NTMFD4C85N** 

## **TYPICAL CHARACTERISTICS − Q2** 

**==> picture [491 x 591] intentionally omitted <==**

**----- Start of picture text -----**<br>
160<br>3.2 V − 10 V VGS = 3.0 V 140 V DS  = 3 V<br>140<br>120<br>120 T J  = 25 ° C<br>2.8 V 100<br>100<br>80<br>80<br>60<br>60<br>2.6 V<br>40 25 ° C<br>40<br>20 2.4 V 20 125 ° C −55 ° C<br>0 0<br>0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 15. On−Region Characteristics Figure 16. Transfer Characteristics<br>3.0 1.6<br>2.8<br>2.6 T J  = 25 ° C 1.4<br>2.4 I D  = 30 A<br>2.2 1.2<br>2.0<br>1.8 1.0 V GS  = 4.5 V<br>1.6<br>0.8<br>1.4<br>1.2 VGS = 10 V<br>0.6<br>1.0<br>0.8 0.4<br>0.6<br>0.4 0.2 T J  = 25 ° C<br>0.2<br>0 0<br>2 3 4 5 6 7 8 9 10 20 30 40 50 60 70 80<br>VGS, GATE VOLTAGE (V) IDS, DRAIN CURRENT (A)<br>Figure 17. On−Resistance vs. Gate−to−Source Figure 18. On−Resistance vs. Drain Current<br>Voltage and Gate Voltage<br>2.0 10,000<br>1.8 VGS = 10 V 9000 VTJ GS  = 25 = 0 V ° C<br>1.6 I D  = 30 A 8000 f = 1 MHz<br>7000 CISS<br>1.4<br>1.2 6000 COSS<br>5000<br>1.0<br>4000<br>0.8<br>3000<br>0.6 2000<br>0.4 1000 CRSS<br>0.2 0<br>−50 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 30<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>IDS IDS<br>) � ) �<br>, DRAIN−TO−SOURCE , DRAIN−TO−SOURCE<br>RESISTANCE (m RESISTANCE (m<br>DS(on) DS(on)<br>R R<br>C)<br>°<br> (Normalized to 25 C, CAPACITANCE (pF)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Figure 19. On−Resistance Variation with Temperature** 

**Figure 20. Capacitance Variation** 

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**9** 

**NTMFD4C85N** 

## **TYPICAL CHARACTERISTICS − Q2** 

**==> picture [490 x 586] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 10<br>VVGS DS  = 15 V = 10 V td(off) 9 T J  = 25 ° C<br>I D  = 20 A t f 8<br>7<br>100<br>tr 6<br>t d(on) 5<br>4<br>10<br>3<br>2<br>1<br>1 0<br>1 10 100 0.3 0.4 0.5 0.6 0.7 0.8<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 21. On−Region Characteristics Figure 22. Diode Forward Voltage vs. Current<br>12 1.0E+06<br>QT VGS = 0 V<br>10 1.0E+05 T J  = 150 ° C<br>TJ = 125 ° C<br>8 1.0E+04<br>TJ = 85 ° C<br>6 1.0E+03<br>4 1.0E+02<br>QGS QGD VGS = 10 V<br>2 VDS = 15 V 1.0E+01<br>ID = 20 A<br>TJ = 25 ° C<br>0 1.0E+00<br>0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30<br>QG, TOTAL GATE CHARGE (nC) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 23. Gate−to−Source and Figure 24. Drain−to−Source Leakage Current<br>Drain−to−Source Voltage vs. Total Charge vs. Voltage<br>1000<br>VGS ≤  10 V<br>Single Pulse<br>TC = 25 ° C 10  � s<br>100<br>100  � s<br>1 ms<br>10<br>10 ms<br>1<br>RDS(on) Limit<br>Thermal Limit<br>Package Limit dc<br>0.1<br>0.1 1 10 100<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>IS<br>, LEAKAGE (nA)<br>IDSS<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 25. Maximum Rated Forward Biased Safe Operating Area** 

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**10** 

**NTMFD4C85N** 

## **TYPICAL CHARACTERISTICS − Q2** 

**==> picture [490 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>50% Duty Cycle<br>10<br>20%<br>10%<br>5%<br>1<br>2%<br>1%<br>0.1<br>PCB Cu Area 650 mm [2]<br>0.01 PCB Cu thk 1 oz<br>Single Pulse<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>C/W)<br>°<br>R(t) (<br>**----- End of picture text -----**<br>


**Figure 26. Thermal Characteristics** 

## **Ordering Information** 

|**Ordering Information**|||
|---|---|---|
|**Device**|**Package**|**Shipping†**|
|NTMFD4C85NT1G|DFN8<br>(Pb−Free)|1500 / Tape & Reel|
|NTMFD4C85NT3G|DFN8<br>(Pb−Free)|5000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**11** 

**NTMFD4C85N** 

## **PACKAGE DIMENSIONS** 

**DFN8 5x6, 1.27P PowerPhase FET** CASE 506CR ISSUE C 

**==> picture [460 x 501] intentionally omitted <==**

**----- Start of picture text -----**<br>
2X<br>NOTES:<br>0.20 C 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>D A 3. DIMENSIONS b AND b1 APPLY TO PLATED TERMINAL AND ARE<br>MEASURED BETWEEN 0.15 AND 0.25 MM FROM THE TIPS.<br>8 7 D16 5 B 2X 0.20 C 4.5. COPLANARITY APPLIES TO THE EXPOSED PADS AS WELL AS THETERMINALS.DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED<br>AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST<br>POINT ON THE PACKAGE BODY.<br>PIN ONE E1 E MILLIMETERS<br>IDENTIFIER ÉÉ 4X DIMA MIN 0.90 MAX 1.10<br>h A1 0.00 0.05<br>b 0.40 0.60<br>ÉÉ<br>b2 0.40 0.60<br>1 2 3 4 c A1 c 0.20 0.30<br>D 5.15 BSC<br>TOP VIEW D1 4.90 5.10<br>D2 3.70 3.90<br>0.10 C A D3 2.96 3.16<br>E 6.15 BSC<br>DETAIL A E1 5.80 6.00<br>E2 2.37 2.57<br>0.10 C E3 1.05 1.25<br>NOTE 4 C [SEATING] PLANE E4 1.36 1.56<br>SIDE VIEW DETAIL A NOTE 6 Ge 0.625 BSC1.27 BSC<br>G1 1.615 BSC<br>h −−− 12    �<br>8X b L 0.34 0.59<br>0.10 M C A B 0.10 M C A B L2 1.68 1.93<br>D2<br>0.05 M C NOTE 3<br>1 1<br>E3<br>5X L 6X b2 0.10 M C A B<br>G1<br>E2<br>E4 G<br>RECOMMENDED<br>L2 SOLDERING FOOTPRINT*<br>e/2 D3 5.50<br>e SUPPLEMENTAL 4.05<br>BOTTOM VIEW BOTTOM VIEW 1.27<br>PITCH 5X<br>0.75<br>0.62 0.54<br>2.07<br>1.22<br>2.67<br>6.50<br>1.66 5X<br>0.76 0.71 2.31<br>0.23<br>0.98 6X<br>0.65<br>4.10<br>DIMENSION: MILLIMETERS<br>**----- End of picture text -----**<br>


3. DIMENSIONS b AND b1 APPLY TO PLATED TERMINAL AND ARE MEASURED BETWEEN 0.15 AND 0.25 MM FROM THE TIPS. 

6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST POINT ON THE PACKAGE BODY. 

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**www.onsemi.com** 

**12** 

**NTMFD4C85N** 

ON Semiconductor and the         are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf.  SCILLC reserves the right to make changes without further notice to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.  All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  SCILLC does not convey any license under its patent rights nor the rights of others.  SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  SCILLC is an Equal Opportunity/Affirmative Action Employer.  This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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Updated at February 9, 2023

onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.

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