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NTMD5836NL
Dual MOSFET, N Channel, 40 V, 9 A, 9500 µohm
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- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- Transistor Polarity:Dual N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0095ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.
- MSL: MSL 1 - Unlimited
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.5W
- Power Dissipation P Channel: -
- Drain Source Voltage Vds N Channel: 40V
- Drain Source Voltage Vds P Channel: -
- Continuous Drain Current Id N Channel: 9A
- Continuous Drain Current Id P Channel: -
- Drain Source On State Resistance N Channel: 9500µohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.197 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
NTMD5836NL ## Power MOSFET ## **40 V, Dual N−Channel, SOIC−8** ## **Features** - Asymmetrical N Channels ## **http://onsemi.com** - Low RDS(on) - Low Capacitance - Optimized Gate Charge - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant **ID Max V(BR)DSS RDS(on) Max** (Notes 1 and 2) Channel 1 40 V 12 m @ 10 V 11 A 16 m @ 4.5 V Channel 2 40 V 20 m @ 10 V 6.5 A 36.5 m @ 4.5 V ~~==a~~ 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 2. Only selected channel is been powered - 1W applied on channel 1: TJ = 1 W * 85 ° C/W + 25 ° C = 110 ° C **==> picture [161 x 91] intentionally omitted <==** **----- Start of picture text -----**<br> N−Channel 1 N−Channel 2<br>D1 D2<br>G1 G2<br>S1 S2<br>**----- End of picture text -----**<br> **==> picture [162 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> MARKING DIAGRAM *<br>AND PIN ASSIGNMENT<br>D1 D1 D2 D2<br>8 8<br>1 5836NL<br>SOIC−8 AYWW<br>CASE 751<br>1 Ls<br>S1 G1 S2 G2<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br> **ORDERING INFORMATION Device Package Shipping**[†] NTMD5836NLR2G SOIC−8 2500 / (Pb−Free) Tape & Reel ~~oe~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D Publication Order Number: **NTMD5836NL/D** **1** © Semiconductor Components Industries, LLC, 2012 **February, 2012 − Rev. 1** ## **NTMD5836NL** ## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) |**MAXIMUM RATINGS**(TJ= 25°C unless otherwise stated)|**MAXIMUM RATINGS**(TJ= 25°C unless otherwise stated)|||||| |---|---|---|---|---|---|---| |**Parameter**|||**Symbol**|**Ch 1**|**Ch 2**|**Unit**| |Drain−to−Source Voltage|||VDSS|40|40|V| |Gate−to−Source Voltage|||VGS|�20|�20|V| |Continuous Drain Current RθJA(Notes 3 and 4)|Steady<br>State|TA= 25°C|ID|9.0|5.7|A| |||TA= 70°C||7.2|4.6|| |Power Dissipation RθJA(Notes 3 and 4)||TA= 25°C|PD|1.5|1.5|W| |||TA= 70°C||0.9|0.9|| |Continuous Drain Current RθJA(Notes 3 and 4)|t�10s|TA= 25°C|ID|11|6.5|A| |||TA= 70°C||8.6|4.6|| |Power Dissipation RθJA(Notes 3 and 4)||TA= 25°C|PD|2.1|1.9|W| |||TA= 70°C||1.3|1.2|| |Pulsed Drain Current|tp= 10�s||IDM|43|26|A| |Operating Junction and Storage Temperature|||TJ, TSTG|−55 to +150||°C| |Source Current (Body Diode)|||IS|10|7.0|A| |Single Pulse Drain−to−Source Avalanche Energy (VDD= 40 V, VGS= 10 V, L = 0.1 mH�|||EAS|76|22|mJ| ||||IAS|39|21|A| |Lead Temperature for Soldering Purposes (1/8” from case for 10s)|||TL|260||°C| Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 4. Only selected channel is been powered - 1W applied on channel 1: TJ = 1 W * 85 ° C/W + 25 ° C = 110 ° C ## **THERMAL RESISTANCE RATINGS** |**THERMAL RESISTANCE RATINGS**||||| |---|---|---|---|---| |**Parameter**|**Symbol**|**Ch 1**|**Ch 2**|**Unit**| |Junction−to−Ambient Steady State (Notes 5 and 7)|RθJA|85|86|°C/W| |Junction−to−Ambient – t�10 s (Notes 5 and 7)|RθJA|60|65|| |Junction−to−Ambient Steady State (Notes 5 and 8)|RθJA|59||| |Junction−to−Ambient Steady State (Notes 6 and 7)|RθJA|136|136|| 5. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 6. Surface−mounted on FR4 board using 0.155 in sq (100 mm[2] ) pad size 7. Only selected channel is been powered - 1W applied on channel 1: TJ = 1 W * 85 ° C/W + 25 ° C = 110 ° C 8. Both channels receive equivalent power dissipation - 1 W applied on each channel: TJ = 2 W * 59 ° C/W + 25 ° C = 143 ° C **http://onsemi.com** **2** ## **NTMD5836NL** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTIC**|**S**(TJ= 25°C|unless otherwise specified)|unless otherwise specified)|||||| |---|---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Ch**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||||||| |Drain−to−Source Breakdown<br>Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A||Ch 1|40|||V| |||||Ch 2||||| |Drain−to−Source Breakdown<br>Voltage Temperature Coefficient|V(BR)DSS<br>/ TJ|||Ch 1||146||mV/<br>°C| |||||Ch 2||25||| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 40 V|TJ= 25°C|Ch 1|||1.0|�A| |||||Ch 2||||| ||||TJ= 125°C|Ch 1|||100|| |||||Ch 2||||| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=�20 V||Ch 1|||�100|nA| |||||Ch 2||||| |**ON CHARACTERISTICS**(Note 9)||||||||| |Gate Threshold Voltage|VGS(TH)|VGS = VDS, ID= 250�A||Ch 1|1.0|1.8|3.0|V| |||||Ch 2|1.0|1.8|3.0|| |Negative Threshold Temperature<br>Coefficient|VGS(TH)/<br>TJ|||Ch 1||6.0||mV/°C| |||||Ch 2||6.0||| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 V, ID= 10 A||Ch 1||9.5|12|m�| |||VGS= 10 V, ID= 7 A||Ch 2||16.2|20|| |||VGS= 4.5 V, ID= 10 A||Ch 1||13|16|m�| |||VGS= 4.5 V, ID= 7 A||Ch 2||25.0|36.5|| |Forward Transconductance|gFS|VDS= 15 V, ID= 10 A||Ch 1||10.5||S| |||VDS= 15 V, ID= 7 A||Ch 2||6.0||| |**CHARGES, CAPACITANCES & GATE RESISTANCE**||||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS=<br>20 V||Ch 1||2120||pF| |||||Ch 2||730||| |Output Capacitance|COSS|||Ch 1||315||| |||||Ch 2||123||| |Reverse Transfer Capacitance|CRSS|||Ch 1||225||| |||||Ch 2||84||| 9. Pulse Test: pulse width � 300 � s, duty cycle � 2% 10.Switching characteristics are independent of operating junction temperatures **http://onsemi.com** **3** **NTMD5836NL** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTIC**|**S**(TJ= 25°C|unless otherwise specified)|unless otherwise specified)|||||| |---|---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Ch**|**Min**|**Typ**|**Max**|**Unit**| |**CHARGES, CAPACITANCES & GATE RESISTANCE**||||||||| |Total Gate Charge|QG(TOT)|VGS= 10V, VDS= 20V, ID= 10A||Ch 1||36|50|nC| |||VGS= 10 V, VDS= 20 V, ID= 7 A||Ch 2||16||| |||VGS= 4.5 V, VDS= 20 V, CH1:<br>ID= 10 A, CH2: ID= 7 A||Ch 1||15|23|| |||||Ch 2||8.5|11|| |Threshold Gate Charge|QG(TH)|||Ch 1||2.4||| |||||Ch 2||1.0||| |Gate−to−Source Charge|QGS|||Ch 1||6.9||| |||||Ch 2||2.8||| |Gate−to−Drain Charge|QGD|||Ch 1||7.2||| |||||Ch 2||4.0||| |Plateau Voltage|VGP|||Ch 1||3.2||V| |||||Ch 2||3.3||| |Gate Resistance|RG|||Ch 1||1.2||�| |||||Ch 2||2.1||| |**SWITCHING CHARACTERISTICS**(Note 10)||||||||| |Turn−On Delay Time|td(ON)|VGS= 4.5 V, VDD= 20 V, CH1:<br>ID= 10 A, CH2: ID= 7 A, RG=<br>2.5�||Ch 1||16||ns| |||||Ch 2||11.5||| |Rise Time|tr|||Ch 1||22||| |||||Ch 2||14||| |Turn−Off Delay Time|td(OFF)|||Ch 1||26||| |||||Ch 2||15.5||| |Fall Time|tf|||Ch 1||8.5||| |||||Ch 2||3.5||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||| |Forward Diode Voltage|VSD|VGS= 0 V,<br>CH1: ID=<br>10 A, CH2: ID<br>= 7 A|TJ= 25°C|Ch 1||0.9|1.2|V| |||||Ch 2||0.85|1.2|| ||||TJ= 125°C|Ch 1||0.65||| |||||Ch 2||0.73||| |Reverse Recovery Time|tRR|VGS= 0 V, dISD/dt = 100 A/�s,<br>CH1: ID= 10 A, CH2: ID= 7 A||Ch 1||27||ns| |||||Ch 2||17||| |Charge Time|Ta|||Ch 1||14||| |||||Ch 2||11||| |Discharge Time|Tb|||Ch 1||13||| |||||Ch 2||6.0||| |Reverse Recovery Charge|QRR|||Ch 1||19||nC| |||||Ch 2||9.0||| 9. Pulse Test: pulse width � 300 � s, duty cycle � 2% 10.Switching characteristics are independent of operating junction temperatures **http://onsemi.com 4** **NTMD5836NL** ## **TYPICAL PERFORMANCE CURVES** **==> picture [493 x 613] intentionally omitted <==** **----- Start of picture text -----**<br> 70 70<br>10V 5.5 V TJ = 25 ° C VDS ≥ 20 V<br>60 6.5 V 60<br>3.9 V<br>8.5 V<br>50 50<br>40 4.5 V 40<br>30 3.5 V 30 TJ = 125 ° C<br>20 20 TJ = 25 ° C<br>3.1 V<br>10 10 TJ = −55 ° C<br>0 VGS = 2.5 V 0<br>0 1 2 3 4 5 2 3 4 5<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics − Figure 2. Transfer Characteristics − Channel 1<br>Channel 1<br>0.035 0.02<br>TJ = 25 ° C TJ = 25 ° C<br>ID = 10 A<br>0.03<br>0.015<br>0.025 VGS = 4.5 V<br>0.02 VGS = 10 V<br>0.01<br>0.015<br>0.01 0.005<br>2 3 4 5 6 7 8 9 10 2 6 10 14 18<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage − Channel 1 Gate Voltage − Channel 1<br>1.6 100000<br>ID = 10 A VGS = 0 V<br>VGS = 4.5 V<br>1.4<br>TJ = 150 ° C<br>1.2 10000<br>TJ = 125 ° C<br>1<br>0.8 1000<br>−50 −25 0 25 50 75 100 125 150 10 20 30 40<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>DRAIN CURRENT (A) DRAIN CURRENT (A)<br>ID, ID,<br>) � ) �<br>DRAIN−TO−SOURCE RESISTANCE ( DRAIN−TO−SOURCE RESISTANCE (<br>DS(on), DS(on),<br>R R<br>DRAIN−TO−SOURCE , LEAKAGE (nA)<br>IDSS<br>DS(on),<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br> **Figure 5. On−Resistance Variation with Temperature − Channel 1** **Figure 6. Drain−to−Source Leakage Current vs. Voltage − Channel 1** **http://onsemi.com** **5** **NTMD5836NL** ## **TYPICAL PERFORMANCE CURVES** **==> picture [492 x 607] intentionally omitted <==** **----- Start of picture text -----**<br> 3000 10<br>TJ = 25 ° C QT<br>2500 VGS = 0 V<br>8<br>Ciss<br>2000<br>6<br>1500<br>4<br>1000 Q GS QGD<br>500 2 VGS = 20 V<br>Coss ID = 10 A<br>Crss TJ = 25 ° C<br>0 0<br>0 10 20 30 40 0 5 10 15 20 25 30 35 40<br>DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)<br>Figure 7. Capacitance Variation − Channel 1 Figure 8. Gate−To−Source and<br>Drain−To−Source Voltage vs. Total Charge −<br>Channel 1<br>1000<br>20<br>VDD = 20 V VGS = 0 V<br>ID = 10 A TJ = 25 ° C<br>VGS = 4.5 V<br>15<br>tr<br>100<br>10<br>td(off) tf td(on) 5<br>10 0<br>1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 9. Resistive Switching Time Figure 10. Diode Forward Voltage vs. Current<br>Variation vs. Gate Resistance − Channel 1 − Channel 1<br>100 80<br>ID = 39 A<br>10 1 � s<br>60<br>1 10 � s<br>100 � s 40<br>VGS = 20 V<br>0.1 SINGLE PULSE 1 ms<br>TC = 25 ° C dc<br>20<br>0.01<br>RDS(on) LIMIT<br>THERMAL LIMIT<br>PACKAGE LIMIT<br>0.001 0<br>0.1 1 10 100 25 50 75 100 125 150<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE ( ° C)<br>C, CAPACITANCE (pF) , GATE−TO−SOURCE (V) , DRAIN−TO−SOURCE (V)<br>GS<br>V DS<br>V<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>IS<br>, DRAIN CURRENT (A)<br>ID<br>EAS, SINGLE PULSE DRAIN−TO−<br>SOURCE AVALANCHE ENERGY (mJ)<br>**----- End of picture text -----**<br> **Figure 11. Maximum Rated Forward Biased Safe Operating Area − Channel 1** **Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature − Channel 1** **http://onsemi.com** **6** **NTMD5836NL** ## **TYPICAL PERFORMANCE CURVES** **==> picture [487 x 391] intentionally omitted <==** **----- Start of picture text -----**<br> 50 50<br>10V 6.5 V VDSDS ≥ 5 V<br>4.5 V<br>8.5 V<br>40 40<br>5.5 V<br>4 V<br>30 30<br>3.6 V<br>20 20 T J = 125 ° C<br>10 10 TJ = 25J = 25 = 25 ° C<br>VGS = 3 V TJ = −55J = −55 = −55 ° C<br>TJ = 25 ° C<br>0 0<br>0 1 2 3 4 5 2 3 4<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)GS, GATE−TO−SOURCE VOLTAGE (V), GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics − Figure 2. Transfer Characteristics − Channel 2<br>Channel 2<br>0.05 0.03<br>TJ = 25 ° C TJ = 25 ° C<br>I D = 7 A VGS = 4.5 V<br>0.04<br>0.025<br>0.03<br>0.02<br>VGS = 10 V<br>0.02<br>0.01 0.015<br>2 3 4 5 6 7 8 9 10 2 6 10 14 18<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>DRAIN CURRENT (A) DRAIN CURRENT (A)<br>ID, ID,<br>) � ) �<br>DRAIN−TO−SOURCE RESISTANCE ( DRAIN−TO−SOURCE RESISTANCE (<br>DS(on), DS(on),<br>R R<br>**----- End of picture text -----**<br> **==> picture [223 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>VDSDS ≥ 5 V<br>40<br>30<br>20 T J = 125 ° C<br>10 TJ = 25J = 25 = 25 ° C<br>TJ = −55J = −55 = −55 ° C<br>0<br>2 3 4 5<br>VGS, GATE−TO−SOURCE VOLTAGE (V)GS, GATE−TO−SOURCE VOLTAGE (V), GATE−TO−SOURCE VOLTAGE (V)<br>**----- End of picture text -----**<br> **Figure 3. On−Resistance vs. Gate−to−Source Voltage − Channel 2** **Figure 4. On−Resistance vs. Drain Current and Gate Voltage − Channel 2** **==> picture [487 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 1.6 100000<br>VGS = 4.5 V VGS = 0 V<br>1.4 ID = 7 A<br>10000<br>1.2 TJ = 150 ° C<br>1<br>1000 TJ = 125 ° C<br>0.8<br>0.6 100<br>−50 −25 0 25 50 75 100 125 150 5 15 25 35<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>DRAIN−TO−SOURCE , LEAKAGE (nA)<br>IDSS<br>DS(on),<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br> **Figure 5. On−Resistance Variation with Temperature − Channel 2** **Figure 6. Drain−to−Source Leakage Current vs. Voltage − Channel 2** **http://onsemi.com** **7** **NTMD5836NL** ## **TYPICAL PERFORMANCE CURVES** **==> picture [494 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 1200 10<br>TJ = 25 ° C QT<br>1000 VGS = 0 V<br>8<br>800 Ciss<br>6<br>600<br>4 Q GS Q GD<br>400<br>200 C oss 2 VDS = 20 V<br>ID = 7 A<br>0 Crss 0 TJ = 25 ° C<br>0 10 20 30 40 0 5 10 15<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)<br>C, CAPACITANCE (pF) , GATE−TO−SOURCE (V) , DRAIN−TO−SOURCE (V)<br>GS DS<br>V V<br>**----- End of picture text -----**<br> **Figure 7. Capacitance Variation − Channel 2** **Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge** **==> picture [494 x 419] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>VDD = 20 V 12 VGS = 0 V<br>ID = 7 A TJ = 25 ° C<br>VGS = 4.5 V 10<br>100 tr 8<br>td(off)<br>6<br>10 td(on) 4<br>tf 2<br>1 0<br>1 10 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 9. Resistive Switching Time Figure 10. Diode Forward Voltage vs. Current<br>Variation vs. Gate Resistance − Channel 2 − Channel 2<br>100 20<br>ID = 21 A<br>10<br>15<br>1 �s<br>1<br>10 �s 10<br>0.1 VGS = 20 V 100 �s<br>SINGLE PULSETC = 25 ° C dc 1 ms 5<br>0.01<br>RDS(on) LIMIT<br>THERMAL LIMIT<br>PACKAGE LIMIT<br>0.001 0<br>0.1 1 10 100 25 50 75 100 125 150<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE ( ° C)<br>Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy vs.<br>Safe Operating Area − Channel 2 Starting Junction Temperature<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>IS<br>, DRAIN CURRENT (A)<br>ID AVALANCHE ENERGY (mJ)<br>EAS, SINGLE PULSE DRAIN−TO−SOURCE<br>**----- End of picture text -----**<br> **http://onsemi.com** **8** **NTMD5836NL** ## **TYPICAL PERFORMANCE CURVES** **==> picture [484 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>D = 0.5<br>0.2<br>10<br>0.1<br>0.05<br>0.02<br>1<br>0.01<br>0.1<br>SINGLE PULSE<br>0.01<br>0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, PULSE TIME (s)<br>C/W)<br>°<br>R(t) (<br>**----- End of picture text -----**<br> **Figure 13. Thermal Response** **http://onsemi.com** **9** **NTMD5836NL** ## **PACKAGE DIMENSIONS** **==> picture [467 x 414] intentionally omitted <==** **----- Start of picture text -----**<br> SOIC−8 NB<br>CASE 751−07<br>ISSUE AK NOTES:<br>−X− 1. DIMENSIONING AND TOLERANCING PER<br>ANSI Y14.5M, 1982.<br>A 2. CONTROLLING DIMENSION: MILLIMETER.<br>3. DIMENSION A AND B DO NOT INCLUDE<br>MOLD PROTRUSION.<br>4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)<br>8 5 PER SIDE.<br>py 5. DIMENSION D DOES NOT INCLUDE DAMBAR<br>B S 0.25 (0.010) M Y M PROTRUSION. ALLOWABLE DAMBAR<br>PROTRUSION SHALL BE 0.127 (0.005) TOTAL<br>1 IN EXCESS OF THE D DIMENSION AT<br>4 MAXIMUM MATERIAL CONDITION.<br>−Y− K 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW<br>STANDARD IS 751−07.<br>G MILLIMETERS INCHES<br>DIM MIN MAX MIN MAX<br>A 4.80 5.00 0.189 0.197<br>C N X 45 B 3.80 4.00 0.150 0.157<br>SEATING C 1.35 1.75 0.053 0.069<br>PLANE D 0.33 0.51 0.013 0.020<br>−Z− G 1.27 BSC 0.050 BSC<br>H 0.10 0.25 0.004 0.010<br>0.10 (0.004) J 0.19 0.25 0.007 0.010<br>H D M J K 0.40 1.27 0.016 0.050<br>M 0 8 0 8<br>N 0.25 0.50 0.010 0.020<br>0.25 (0.010) M Z Y S X S SOLDERING FOOTPRINT* S 5.80 6.20 0.228 0.244<br>1.52<br>0.060<br>pe<br>7.0 4.0<br>0.275 Ld 0.155<br>0.6 1.270<br>0.024 pone 0.050<br>SCALE 6:1 mm<br>inches<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ## **LITERATURE FULFILLMENT** : **http://onsemi.com** **NTMD5836NL/D** **10**
Updated at June 9, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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