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NTMD3P03R2G
Dual MOSFET, P Channel, 30 V, 30 V, 3.05 A, 3.05 A, 0.085 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:-3.05A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 2W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 3.05A
- Continuous Drain Current Id P Channel: 3.05A
- Drain Source On State Resistance N Channel: 0.085ohm
- Drain Source On State Resistance P Channel: 0.085ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.352 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
NTMD3P03, NVMD3P03 ## Power MOSFET -3.05 Amps, -30 Volts **Dual P−Channel SOIC−8** ## **Features** - High Efficiency Components in a Dual SOIC−8 Package - High Density Power MOSFET with Low RDS(on) - Miniature SOIC−8 Surface Mount Package − Saves Board Space ## **http://onsemi.com** - Diode Exhibits High Speed with Soft Recovery - IDSS Specified at Elevated Temperature - Avalanche Energy Specified - Mounting Information for the SOIC−8 Package is Provided **VDSS RDS(ON) Typ ID Max** −30 V 85 m @ −10 V −3.05 A ~~re ee~~ ee - AEC−Q101 Qualified − NVMD3P03R2G - These Devices are Pb−Free and are RoHS Compliant **==> picture [477 x 413] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |P−Channel| |Applications|D| |•|DC−DC Converters| |•|Low Voltage Motor Control| |•|Power Management in Portable and Battery−Powered Products, i.e.:| |Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones|G| |MAXIMUM RATINGS|(TJ = 25|°|C unless otherwise noted)| |a|Rating|Symbol|Value|Unit|S| |a|Drain−to−Source Voltage|VDSS|−30|V|MARKING DIAGRAM|*| |a|Gate−to−Source Voltage − Continuous|VGS|±|20|V|AND PIN ASSIGNMENT| |Thermal Resistance −|8| |Continuous Drain Current @ 25Junction−to−Ambient (Note 1)Total Power Dissipation @ TA = 25|°|C|°|C|RPIDDJA|−2.340.73171|°|C/WWA|SOIC−8|1|8D1|D1|D2|D2| |Continuous Drain Current @ 70|°|C|ID|−1.87|A|SUFFIX NB|ED3P03| |Pulsed Drain Current (Note 4)|IDM|−8.0|A|CASE 751|AYWW| |Thermal Resistance −|STYLE 11| |Junction−to−Ambient (Note 2)Total Power Dissipation @ TA = 25|°|C|RPDJA|1.25100|°|C/WW|1| |Continuous Drain Current @ 25|°|C|ID|−3.05|A|S1|G1|S2|G2| |Continuous Drain Current @ 70|°|C|ID|−2.44|A| |Pulsed Drain Current (Note 4)|IDM|−12|A|ED3P03= Specific Device Code| |Thermal Resistance −|A|= Assembly Location| |Junction−to−Ambient (Note 3)|R|JA|62.5|°|C/W|Y|= Year| |Total Power Dissipation @ TA = 25|°|C|PD|2.0|W|WW|= Work Week| |Continuous Drain Current @ 25Continuous Drain Current @ 70Pulsed Drain Current (Note 4)|°°|CC|IDMIIDD|−3.86−3.1−15|AAA|(Note: Microdot may be in either location)= Pb−Free Package| |Operating and StorageTemperature Range|TJ, Tstg|−55 to+150|°|C|*For additional marking information, refer to Application Note AND8002/D.| |Single Pulse Drain−to−Source Avalanche|EAS|140|mJ| |Energy − Starting TJ = 25|°|C|ORDERING INFORMATION| |(VDD = −30 Vdc, VGS = −4.5 Vdc, Peak IL| |= −7.5 Apk, L = 5 mH, RG = 25|)|Device|Packagegee|Shippingppingingg|[[†]]| |es|Maximum Lead Temperature for SolderingPurposes, 1/8|″|from case for 10 seconds|TL|260|°|C|NTMD3P03R2G|(Pb−Free)SOIC−8SOIC−8|2500 / Tape &ReelReel| |Stresses exceeding Maximum Ratings may damage the device. Maximum| |Ratings are stress ratings only. Functional operation above the Recommended|NVMD3P03R2G|SOIC−8|2500 / Tape &| |Operating Conditions is not implied. Extended exposure to stresses above the|(Pb−Free)|Reel| |Recommended Operating Conditions may affect device reliability.|a|=| **----- End of picture text -----**<br> **Device Packagegee Shippingppingingg**[[†]] NTMD3P03R2G (Pb−Free)SOIC−8SOIC−8 2500 / Tape &ReelReel NVMD3P03R2G SOIC−8 2500 / Tape & (Pb−Free) Reel ~~=~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D 1. Minimum FR−4 or G−10 PCB, t = Steady State. 2. Mounted onto a 2 ″ square FR−4 Board (1 in sq, 2 oz Cu 0.06 ″ thick single sided), t = steady state. 3. Mounted onto a 2 ″ square FR−4 Board (1 in sq, 2 oz Cu 0.06 ″ thick single sided), t ≤ 10 seconds. 4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%. Publication Order Number: **NTMD3P03R2/D** **1** © Semiconductor Components Industries, LLC, 2013 **August, 2013 − Rev. 4** ## **NTMD3P03, NVMD3P03** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) (Note 5) |**ELECTRICAL CHARACTERISTICS**(TJ= 25°C unless otherwise noted) (No|**ELECTRICAL CHARACTERISTICS**(TJ= 25°C unless otherwise noted) (No|te 5)||||| |---|---|---|---|---|---|---| |**Characteristic**||**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||||| |Drain−to−Source Breakdown Voltage<br>(VGS= 0 Vdc, ID= −250�Adc)<br>Temperature Coefficient (Positive)||V(BR)DSS|−30<br>−|−<br>−30|−<br>−|Vdc<br>mV/°C| |Zero Gate Voltage Drain Current<br>(VDS= −24 Vdc, VGS= 0 Vdc, TJ= 25°C)<br>(VDS= −24 Vdc, VGS= 0 Vdc, TJ= 125°C)<br>(VDS= −30 Vdc, VGS= 0 Vdc, TJ= 25°C)||IDSS|−<br>−<br>−|−<br>−<br>−|−1.0<br>−20<br>−2.0|�Adc| |Gate−Body Leakage Current<br>(VGS= −20 Vdc, VDS= 0 Vdc)||IGSS|−|−|−100|nAdc| |Gate−Body Leakage Current<br>(VGS= +20 Vdc, VDS= 0 Vdc)||IGSS|−|−|100|nAdc| |**ON CHARACTERISTICS**||||||| |Gate Threshold Voltage<br>(VDS= VGS, ID= −250�Adc)<br>Temperature Coefficient (Negative)||VGS(th)|−1.0<br>−|−1.7<br>3.6|−2.5<br>−|Vdc| |Static Drain−to−Source On−State Resistance<br>(VGS= −10 Vdc, ID= −3.05 Adc)<br>(VGS= −4.5 Vdc, ID= −1.5 Adc)||RDS(on)|−<br>−|0.063<br>0.090|0.085<br>0.125|�| |Forward Transconductance (VDS=|−15 Vdc, ID= −3.05 Adc)|gFS|−|5.0|−|Mhos| |**DYNAMIC CHARACTERISTICS**||||||| |Input Capacitance|(VDS= −24 Vdc, VGS= 0 Vdc,<br>f = 1.0 MHz)|Ciss|−|520|750|pF| |Output Capacitance||Coss|−|170|325|| |Reverse Transfer Capacitance||Crss|−|70|135|| |**SWITCHING CHARACTERISTICS**(Notes 6 and 7)||||||| |Turn−On Delay Time|(VDD= −24 Vdc, ID= −3.05 Adc,<br>VGS= −10 Vdc,<br>RG= 6.0�)|td(on)|−|12|22|ns| |Rise Time||tr|−|16|30|| |Turn−Off Delay Time||td(off)|−|45|80|| |Fall Time||tf|−|45|80|| |Turn−On Delay Time|(VDD= −24 Vdc, ID= −1.5 Adc,<br>VGS= −4.5 Vdc,<br>RG= 6.0�)|td(on)|−|16|−|ns| |Rise Time||tr|−|42|−|| |Turn−Off Delay Time||td(off)|−|32|−|| |Fall Time||tf|−|35|−|| |Total Gate Charge|(VDS= −24 Vdc,<br>VGS= −10 Vdc,<br>ID= −3.05 Adc)|Qtot|−|16|25|nC| |Gate−Source Charge||Qgs|−|2.0|−|| |Gate−Drain Charge||Qgd|−|4.5|−|| |**BODY−DRAIN DIODE RATINGS**(Note 6)||||||| |Diode Forward On−Voltage|(IS= −3.05 Adc, VGS= 0 V)<br>(IS= −3.05 Adc, VGS= 0 V, TJ= 125°C)|VSD|−<br>−|−0.96<br>−0.78|−1.25<br>−|Vdc| |Reverse Recovery Time|(IS= −3.05 Adc, VGS= 0 Vdc,<br>dIS/dt = 100 A/�s)|trr|−|34|−|ns| |||ta|−|18|−|| |||tb|−|16|−|| |Reverse Recovery Stored Charge||QRR|−|0.03|−|�C| 5. Handling precautions to protect against electrostatic discharge is mandatory. 6. Indicates Pulse Test: Pulse Width = 300 � s max, Duty Cycle = 2%. 7. Switching characteristics are independent of operating junction temperature. **http://onsemi.com** **2** **NTMD3P03, NVMD3P03** ## **TYPICAL ELECTRICAL CHARACTERISTICS** **==> picture [492 x 631] intentionally omitted <==** **----- Start of picture text -----**<br> 6 6<br>VGS = −10 V VGS = −4.4 V VDS > = −10 V<br>5 VGS = −8 V 5<br>VGS = −4 V<br>VGS = −6 V VGS = −4.6 V<br>4 4<br>TJ = 25 ° C VGS = −4.8 V TJ = 100 ° C<br>3 VGS = −3.6 V 3<br>2 VGS = −5 V VGS = −2.8 VVGS = −3.2 V 2 TJ = 25 ° C<br>VGS = −2.6 V VGS = −3 V TJ = −55 ° C<br>1 1<br>0 0<br>0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 1 2 3 4 5<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>0.7 0.7<br>ID = −3.05 A ID = −1.5 A<br>0.6 TJ = 25 ° C 0.6 TJ = 25 ° C<br>0.5 0.5<br>0.4 0.4<br>0.3 0.3<br>0.2 0.2<br>0.1 0.1<br>0 0<br>3 4 5 6 7 8 2 3 4 5 6 7<br>−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Gate−to−Source<br>Voltage Voltage<br>0.25 1.6<br>ID = −3.05 A<br>TJ = 25 ° C VGS = −10 V<br>1.4<br>0.2 V GS = −4.5 V<br>1.2<br>0.15<br>1<br>VGS = −10 V<br>0.1<br>0.8<br>0.05 0.6<br>1 2 3 4 5 6 −50 −25 0 25 50 75 100 125 150<br>−ID, DRAIN CURRENT (AMPS) TJ, JUNCTION TEMPERATURE ( ° C)<br>Figure 5. On−Resistance vs. Drain Current and Figure 6. On Resistance Variation with<br>Gate Voltage Temperature<br>, DRAIN CURRENT (AMPS) , DRAIN CURRENT (AMPS)<br>D D<br>−I −I<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (<br>DS(on) DS(on)<br>R R<br>) �<br>MALIZED)<br>, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (NOR-<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br> **http://onsemi.com** **3** **NTMD3P03, NVMD3P03** **==> picture [491 x 389] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>VGS = 0 V 1200 VDS = 0 V VGS = 0 V<br>C iss<br>TJ = 150 ° C 1000<br>1000<br>800<br>TJ = 125 ° C 600 Crss Ciss<br>100<br>400<br>C oss<br>200<br>Crss<br>TJ = 25 ° C<br>10 0<br>6 10 14 18 22 26 30 10 5 0 5 10 15 20 25 30<br>−VGS −VDS<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) GATE−TO−SOURCE OR DRAIN−TO−SOURCE<br>VOLTAGE (VOLTS)<br>Figure 7. Drain−to−Source Leakage Current Figure 8. Capacitance Variation<br>vs. Voltage<br>12 30 1000<br>VDS = −24 V<br>QT ID = −3.05 A<br>10 25<br>VGS = −10 V<br>VDS<br>8 20 100<br>VGS td(off)<br>6 15<br>tf<br>Q1 tr<br>4 Q 2 10 10<br>td(on)<br>2 5<br>ID = −3.05 A<br>TJ = 25 ° C<br>0 0 1<br>0 2 4 6 8 10 12 14 16 1 10 100<br>Qg, TOTAL GATE CHARGE (nC) RG, GATE RESISTANCE ( � )<br>, LEAKAGE (nA)<br>IDSS C, CAPACITANCE (pF)<br>t, TIME (ns)<br>, GATE−TO−SOURCE VOLTAGE (VOLTS)<br>GS<br>−V<br>**----- End of picture text -----**<br> **Figure 9. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** **Figure 10. Resistive Switching Time Variation vs. Gate Resistance** **==> picture [247 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>VDS = −24 V<br>ID = −1.5 A<br>VGS = −4.5 V<br>100<br>tr<br>td(off)<br>tf<br>td(on)<br>10<br>1 10 100<br>RG, GATE RESISTANCE ( � )<br>t, TIME (ns)<br>**----- End of picture text -----**<br> **Figure 11. Resistive Switching Time Variation vs. Gate Resistance** **==> picture [241 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 3<br>VGS = 0 V<br>TJ = 25 ° C<br>2.5<br>2<br>1.5<br>1<br>0.5<br>0<br>0.2 0.4 0.6 0.8 1 1.2<br>−VSD, DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>, SOURCE CURRENT (AMPS)<br>IS<br>**----- End of picture text -----**<br> **Figure 12. Diode Forward Voltage vs. Current** **http://onsemi.com** **4** **NTMD3P03, NVMD3P03** **==> picture [479 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>VGS = 12 V<br>SINGLE PULSE<br>TC = 25 ° C 1.0 ms<br>10<br>10 ms di/dt<br>IS<br>1.0 dc<br>trr<br>ta tb<br>0.1 TIME<br>RDS(on) LIMIT<br>THERMAL LIMIT tp 0.25 IS<br>PACKAGE LIMIT<br>0.01 IS<br>1 1.0 10 100<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>, DRAIN CURRENT (AMPS)<br>D<br>−I<br>**----- End of picture text -----**<br> **Figure 13. Maximum Rated Forward Biased Safe Operating Area** **Figure 14. Diode Reverse Recovery Waveform** **==> picture [468 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>D = 0.5<br>0.2<br>0.1<br>0.1 0.05 Chip Normalized to R � JA at Steady State (1 ″ pad)<br>Junction 2.32 � 18.5 � 50.9 � 37.1 � 56.8 � 24.4 �<br>0.02<br>0.01 0.0014 F 0.0073 F 0.022 F 0.105 F 0.484 F 3.68 F<br>Single Pulse Ambient<br>0.01<br>1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03<br>t, TIME (s)<br>, EFFECTIVE TRANSIENT<br>THERMAL RESPONSE<br>thja(t)<br>R<br>**----- End of picture text -----**<br> **Figure 15. FET Thermal Response** **http://onsemi.com** **5** **NTMD3P03, NVMD3P03** ## **PACKAGE DIMENSIONS** **SOIC−8 NB** CASE 751−07 ISSUE AK **==> picture [467 x 434] intentionally omitted <==** **----- Start of picture text -----**<br> NOTES:<br>−X− 1. DIMENSIONING AND TOLERANCING PER<br>ANSI Y14.5M, 1982.<br>A 2. CONTROLLING DIMENSION: MILLIMETER.<br>3. DIMENSION A AND B DO NOT INCLUDE<br>MOLD PROTRUSION.<br>4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)<br>8 5 PER SIDE.<br>acer 5. DIMENSION D DOES NOT INCLUDE DAMBAR<br>B S 0.25 (0.010) M Y M PROTRUSION. ALLOWABLE DAMBAR<br>PROTRUSION SHALL BE 0.127 (0.005) TOTAL<br>1 IN EXCESS OF THE D DIMENSION AT<br>−Y− 4 K 6. 751−01 THRU 751−06 ARE OBSOLETE. NEWMAXIMUM MATERIAL CONDITION.<br>STANDARD IS 751−07.<br>G MILLIMETERS INCHES<br>DIM MIN MAX MIN MAX<br>A 4.80 5.00 0.189 0.197<br>C N X 45 B 3.80 4.00 0.150 0.157<br>SEATING C 1.35 1.75 0.053 0.069<br>PLANE D 0.33 0.51 0.013 0.020<br>−Z− G 1.27 BSC 0.050 BSC<br>H 0.10 0.25 0.004 0.010<br>0.10 (0.004) J 0.19 0.25 0.007 0.010<br>H D M J K 0.40 1.27 0.016 0.050<br>M 0 8 0 8<br>N 0.25 0.50 0.010 0.020<br>0.25 (0.010) M Z Y S X S S 5.80 6.20 0.228 0.244<br>STYLE 11:<br>SOLDERING FOOTPRINT* PIN 1. SOURCE 1<br>2. GATE 1<br>3. SOURCE 2<br>4. GATE 2<br>5. DRAIN 2<br>1.52 6. DRAIN 2<br>0.060 7. DRAIN 1<br>8. DRAIN 1<br>7.0 4.0<br>0.275 mel 0.155<br>0.6 1.270<br>0.024 L096 0.050<br>SCALE 6:1 mm<br>inches<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br> **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **ON Semiconductor Website** : **www.onsemi.com** **LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ## **LITERATURE FULFILLMENT** : **http://onsemi.com** **NTMD3P03R2/D** **6**
Updated at June 9, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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