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NTMC083NP10M5L
Dual MOSFET, N and P Channel, 100 V, 100 V, 4.1 A, 4.1 A, 0.0594 ohm
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- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 3.1W
- Power Dissipation P Channel: 3.1W
- Drain Source Voltage Vds N Channel: 100V
- Drain Source Voltage Vds P Channel: 100V
- Continuous Drain Current Id N Channel: 4.1A
- Continuous Drain Current Id P Channel: 4.1A
- Drain Source On State Resistance N Channel: 0.0594ohm
- Drain Source On State Resistance P Channel: 0.0594ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.352 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## MOSFET - Power, Dual N- & P-Channel, SO8 100 V, 83 m 4.5 A, -100 V, 131 m -3.6 A ~~,~~ ## NTMC083NP10M5L ## **Features** **www.onsemi.com** - Small Footprint (5 x 6 mm) for Compact Design - Low R to Minimize Conduction Losses DS(on) - Low QG and Capacitance to Minimize Driver Losses - The Part is Not ESD Protected - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Typical Applications** **V(BR)DSS RDS(ON) MAX ID MAX** ~~es~~ 100 V 83 m @ 10 V 4.5 A −100 V 131 m @ 10 V −3.6 A ~~a~~ **Dual−Channel MOSFET** - Power Tools, Battery Operated Vacuums - UAV/Drones, Material Handling - Motor Drive, Home Automation |**Parameter**<br>~~a~~|**Parameter**<br>~~a~~|**Parameter**<br>~~a~~|**Symbol**<br>~~ee~~|**Q1**<br>~~ee~~|**Q2**<br>~~a~~|**Unit**<br>~~a~~| |---|---|---|---|---|---|---| |Drain−to−Source Breakdown Voltage<br>~~a ~~|||V(BR)DSS<br> ~~ee~~|100<br>~~ee ~~|−100<br> ~~a ~~|V<br> ~~a~~| |Gate−to−Source Voltage|||VGS|±20|±20|V| |Continuous<br>Drain Current<br>R JC(Note 2)<br>~~Tere~~|Steady<br>State<br>~~Tere~~|TC= 25°C<br>~~Tere~~|ID<br>~~Tere~~|4.1<br>~~Tere~~|−3.3<br>~~Tere~~|A<br>~~Tere~~| |||TC= 100°C<br>~~Tere~~||2.5<br>~~Tere~~|−2<br>~~Tere~~|| |Power Dissi-<br>pation R JC<br>(Note 2)<br>~~Tere~~<br>~~ae~~|Steady<br>State<br>~~Tere~~<br>~~ae~~|TC= 25°C<br>~~Tere~~<br>~~ae~~|PD<br>~~Tere~~<br>~~ae~~|3.1<br>~~Tere~~<br>~~ae~~|3.1<br>~~Tere~~<br>~~ae~~|W<br>~~Tere~~<br>~~ae~~| |||TC= 100°C<br>~~ae~~||1.2<br>~~ae~~|1.2<br>~~ae~~|| |Continuous<br>Drain Current<br>R JA<br>(Notes 1, 2)|Steady<br>State|TA= 25°C|ID<br>~~oo~~|2.9|−2.4|A| |||TA= 100°C<br>~~oo~~||1.8<br>~~oo~~|−1.4<br>~~oo~~|| |Power Dissi-<br>pation R JA<br>(Notes 1, 2)<br>~~ee~~|Steady<br>State<br>~~ee~~|TA= 25°C<br>~~oo~~<br>~~ee~~|PD<br>~~oo~~<br>~~ee~~|1.6<br>~~oo~~<br>~~ee~~|1.6<br>~~oo~~<br>~~ee~~|W<br>~~ee~~| |||TA= 100°C<br>~~ee~~||0.6<br>~~ee~~|0.6<br>~~ee~~|| |Pulsed Drain<br>Current<br>~~Pt~~<br>~~ee~~|TA= 25°C, tp= 10 s<br>~~Pt~~<br>~~ee~~||IDM<br>~~Pt~~<br>~~ee~~|20<br>~~Pt~~<br>~~ee~~|20<br>~~Pt~~<br>~~ee~~|A<br>~~Pt~~<br>~~ee~~| |Operating Junction and Storage<br>Temperature Range<br>~~ee~~|||TJ, Tstg<br>~~ee~~<br>~~OO~~|−55 to +150<br>~~ee~~<br>~~OO~~||°C<br>~~ee~~| |Source Current (Body Diode)<br>~~ee~~<br>~~a~~|||IS<br>~~ee~~<br>~~a~~<br>~~OO~~|3<br>~~ee~~<br>~~a~~<br>~~OO~~|3<br>~~ee~~<br>~~a~~|A<br>~~ee~~<br>~~a~~| |Single Pulse Drain−to−Source<br>Avalanche Energy<br>(IL= 6 A, 8.2 A, L = 1 mH)<br>~~ee ~~<br>~~Po~~|||EAS<br> ~~ee ~~<br>~~OO~~<br>~~Po~~|18<br> ~~ee~~<br>~~OO~~<br>~~Po~~|34<br>~~ee~~<br>~~Po~~|mJ<br>~~ee~~<br>~~Po~~| |Lead Temperature Soldering Reflow for<br>Soldering Purposes<br>(1/8” from case for 10 s)<br>~~PE~~|||TL<br>~~PE~~|260<br>~~PE~~|260<br>~~PE~~|°C<br>~~PE~~| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in[2] pad size, 1 oz Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. **SOIC8 CASE 751EB** **MARKING DIAGRAM** **==> picture [106 x 131] intentionally omitted <==** **----- Start of picture text -----**<br> 83NP10M5<br>ALYW<br>|<br>A = Assembly Location<br>L = Wafer Lot<br>Y = Year<br>W = Work Week<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 4 of this data sheet. Publication Order Number: **NTMC083NP10M5L/D** **1** © Semiconductor Components Industries, LLC, 2021 **May, 2021 − Rev. 1** **NTMC083NP10M5L** ## **THERMAL CHARACTERISTICS** |**Symbol**|**Parameter**|**Q1**|**Q2**|**Unit**| |---|---|---|---|---| |R�JC|Junction−to−Case – Steady State (Note 3)|40|40|°C/W| |R�JA|Junction−to−Ambient – Steady State (Note 3)|78|78|| 3. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. **ELECTRICAL CHARACTERISTICS (Q1, N−CHANNEL)** (TJ = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**|**(Q1, N−CHA**|**NNEL)**(TJ= 25°C unless otherwise note|**NNEL)**(TJ= 25°C unless otherwise note|d)|||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Conditions**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A||100|||V| |Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/ TJ|ID= 250�A, ref to 25°C|||60||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS = 0 V,VDS= 80 V|TJ= 25°C|||1|�A| ||||TJ= 125°C|||100|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=±20 V||||±100|nA| |**ON CHARACTERISTICS**|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 28�A||1.0|1.9|3.0|V| |Negative Threshold Temperature<br>Coefficient|VGS(TH)/ TJ|ID= 22�A, ref to 25°C|||8.2||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 V, ID= 1.5 A|||59.4|83|m�| |||VGS= 4.5 V, ID= 1.2 A|||96.3|118|| |Forward Transconductance|gFS|VDS= 5 V, ID= 4 A|||7.1||S| |Gate−Resistance|RG|TA= 25°C|||1.21||�| |**CHARGES & CAPACITANCES**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 50 V|||222||pF| |Output Capacitance|COSS||||55.4||| |Reverse Transfer Capacitance|CRSS||||2.6||| |Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 50 V, ID= 1.5 A|||3||nC| |Threshold Gate Charge|QG(TH)||||0.6||| |Gate−to−Source Charge|QGS||||0.9||| |Gate−to−Drain Charge|QGD||||1||| |Total Gate Charge|QG(TOT)|VGS= 10 V, VDD= 50 V, ID= 1.5 A|||5||| |**SWITCHING CHARACTERISTICS**|||||||| |Turn−On Delay Time|td(ON)|VGS= 10 V, VDS= 50 V,ID= 1.5 A,<br>RG= 6�|||8.4||ns| |Rise Time|tr||||8||| |Turn−Off Delay Time|td(OFF)||||8.9||| |Fall Time|tf||||6.2||| |Turn−On Delay Time|td(ON)|VGS= 4.5 V, VDS= 50 V,ID= 1.5 A,<br>RG= 6�|||5.7||ns| |Rise Time|tr||||2||| |Turn−Off Delay Time|td(OFF)||||11.2||| |Fall Time|tf||||4.6||| |**OFF CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 1.5 A|TJ= 25°C||0.8|1.2|V| ||||TJ= 125°C||1.3||| **www.onsemi.com** **2** **NTMC083NP10M5L** **ELECTRICAL CHARACTERISTICS (Q1, N−CHANNEL)** (TJ = 25 ° C unless otherwise noted) (continued) |**ELECTRICAL CHARACTERISTICS**|**(Q1, N−CHA**|**NNEL)**(TJ= 25°C unless otherwise note|d) (contin|ued)||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||||| |Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,<br>IS= 0.8 A||19||ns| |Charge Time|ta|||13||| |Discharge Time|tb|||6||| |Reverse Recovery Charge|QRR|||11||nC| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **ELECTRICAL CHARACTERISTICS (Q2, P−CHANNEL)** (TJ = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**|**(Q2, P−CHA**|**NNEL)**(TJ= 25°C unless otherwise note|**NNEL)**(TJ= 25°C unless otherwise note|d)|||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Conditions**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A||100|||V| |Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/ TJ|ID= 250�A, ref to 25°C|||54||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS = 0 V,VDS= 80 V|TJ= 25°C|||1|�A| ||||TJ= 125°C|||100|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=±20 V||||±100|nA| |**ON CHARACTERISTICS**|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= −28�A||−2.0|−3.0|−4.0|V| |Negative Threshold Temperature<br>Coefficient|VGS(TH) / TJ|ID= −28�A, ref to 25°C|||6.61||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 110 V, ID= −1.5 A|||109|131|m�| |||VGS= −6 V, ID= −1 A|||141|198|| |Forward Transconductance|gFS|VDS= 5 V, ID= −7 A|||7.9||S| |Gate−Resistance|RG|TA= 25°C|||3.36||�| |**CHARGES & CAPACITANCES**|||||||| |Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= −50 V|||525||pF| |Output Capacitance|COSS||||88||| |Reverse Transfer Capacitance|CRSS||||4||| |Total Gate Charge|QG(TOT)|VGS= −10 V, VDS= −50 V, ID= −1.5 A|||8.4||nC| |Threshold Gate Charge|QG(TH)||||1.8||| |Gate−to−Source Charge|QGS||||2.7||| |Gate−to−Drain Charge|QGD||||1.3||| |Total Gate Charge|QG(TOT)|VGS= 6 V, VDD= 50 V, ID=−1.5 A|||5.2||| |**SWITCHING CHARACTERISTICS**|||||||| |Turn−On Delay Time|td(ON)|VGS= 10 V, VDS= −50 V,ID= −1.5 A,<br>RG= 6�|||10.1||ns| |Rise Time|tr||||2.7||| |Turn−Off Delay Time|td(OFF)||||15.9||| |Fall Time|tf||||6.8||| |Turn−On Delay Time|td(ON)|VGS= −6 V, VDS= −50 V,ID= −41.5A,<br>RG= 6�|||13.3||ns| |Rise Time|tr||||5.7||| |Turn−Off Delay Time|td(OFF)||||12.5||| |Fall Time|tf||||7||| **www.onsemi.com** **3** ## **NTMC083NP10M5L** **ELECTRICAL CHARACTERISTICS (Q2, P−CHANNEL)** (TJ = 25 ° C unless otherwise noted) (continued) |**ELECTRICAL CHARACTERISTICS**|**(Q2, P−CHA**|**NNEL)**(TJ= 25°C unless otherwise note|**NNEL)**(TJ= 25°C unless otherwise note|d) (continu|ed)||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Conditions**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= −1.5 A|TJ= 25°C||−0.8|−1.2|V| |Forward Diode Voltage|||TJ= 125°C||−0.7||| |Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,<br>IS= −0.8 A|||31||ns| |Charge Time|ta||||23||| |Discharge Time|tb||||8||| |Reverse Recovery Charge|QRR||||42||nC| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ## **ORDERING INFORMATION** |**ORDERING INFORMATION**|||| |---|---|---|---| |**Device**|**Device Marking**|**Package**|**Shipping (Qty / Packing)**†| |NTMC083NP10M5L|83NP10M5|SO8<br>(Pb−Free/Halogen Free)|2500 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **www.onsemi.com** **4** **NTMC083NP10M5L** ## **TYPICAL CHARACTERISTICS − N−CHANNEL** **==> picture [238 x 157] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>VGS = 7 to 10 V<br>5.0 V<br>15<br>4.5 V<br>10<br>4.0 V<br>3.5 V<br>5<br>3.0 V<br>2.5 V<br>0<br>0 1 2 3 4 5<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> VDS, DRAIN−TO−SOURCE VOLTAGE (V) **Figure 1. On−Region Characteristics** **==> picture [238 x 156] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>TJ = −55 ° C<br>VDS = 10 V<br>TJ = 25 ° C<br>15<br>TJ = 125 ° C<br>10<br>5<br>0<br>0 1 2 3 4 5 6 7<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> VGS, GATE−TO−SOURCE VOLTAGE (V) **Figure 2. Transfer Characteristics** **==> picture [490 x 397] intentionally omitted <==** **----- Start of picture text -----**<br> 200 200<br>180 TIDJ = 1.5 A = 25 ° C 180 TJ = 25 ° C<br>160<br>160<br>140<br>140<br>120<br>100 120 VGS = 4.5 V<br>80<br>100<br>60<br>80<br>40<br>60 VGS = 10 V<br>20<br>0 40<br>3 4 5 6 7 8 9 10 1 2 3 4 5<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>2.5 ID = 1.5 A 10000 TJ = 175 ° C<br>VGS = 10 V 1000 TJ = 150 ° C<br>2.0 TJ = 125 ° C<br>100<br>1.5 10 TJ = 85 ° C<br>1<br>1.0<br>0.1 TJ = 25 ° C<br>0.5<br>0.01<br>0 0.001<br>−50 −25 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE (m , DRAIN−TO−SOURCE RESISTANCE (m<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>, DRAIN−TO−SOURCE RE-<br>IDSS<br>SISTANCE (NORMALIZED)<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Figure 5. On−Resistance Variation with Temperature** **==> picture [187 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 6. Drain−to−Source Leakage Current<br>vs. Voltage<br>**----- End of picture text -----**<br> **www.onsemi.com** **5** **NTMC083NP10M5L** ## **TYPICAL CHARACTERISTICS − N−CHANNEL** **==> picture [490 x 592] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 10<br>9 T J = 25 ° C<br>Ciss 8 I VDDS = 1.5 A = 50 V<br>7<br>100<br>Coss 6<br>5<br>4 Q gs Q gd<br>10<br>3<br>VTJGS = 25= 0 V ° C Crss 2<br>f = 1 MHz 1<br>1 0<br>0.1 1 10 100 0 1 2 3 4 5<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)<br>Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge<br>100 1.50<br>VGS = 0 V<br>t d(off) 1.25<br>10<br>td(on)<br>tf 1.00<br>1<br>0.75<br>t r TJ = 125 ° C TJ = 25 ° C<br>0.1<br>VDS = 50 V 0.50<br>ID = 1.5 A<br>0.01 VGS = 4.5 V 0.25 TJ = 150 ° C TJ = −55 ° C<br>1 10 100 0.2 0.4 0.6 0.8 1.0 1.2<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current<br>vs. Gate Resistance<br>VGS ≤ 10 V<br>Single Pulse<br>10 TC = 25 ° C<br>1 10 TJ(initial) = 25 ° C<br>300 � s<br>1 ms T J(initial) = 100 ° C<br>0.1 10 ms<br>RDS(on) Limit 1 s 100 ms<br>Thermal Limit<br>Package Limit<br>0.01 1<br>0.1 1 10 100 1E−06 1E−05 1E−04 1E−03 1E−02<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) TAV, TIME IN AVALANCHE (sec)<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>IS<br> (A)<br>IPEAK<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> **Figure 11. Maximum Rated Forward Biased Safe Operating Area** **Figure 12. Maximum Drain Current vs. Time in Avalanche** **www.onsemi.com** **6** **NTMC083NP10M5L** ## **TYPICAL CHARACTERISTICS − N−CHANNEL** **==> picture [491 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>Duty Cycle = 50%<br>20%<br>10 10%<br>5%<br>2%<br>1 1%<br>0.1<br>Single Pulse<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, PULSE TIME (s)<br>C/W)<br>°<br> (<br>JA<br>�<br>Z<br>**----- End of picture text -----**<br> **Figure 13. Thermal Response** **www.onsemi.com** **7** **NTMC083NP10M5L** ## **TYPICAL CHARACTERISTICS − P−CHANNEL** **==> picture [238 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 15<br>VDS = −10 V<br>10<br>5<br>TJ = 25 ° C<br>TJ = 125 ° C TJ = −55 ° C<br>0<br>0 1 2 3 4 5 6 7<br>−VGS, GATE−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>D<br>−I<br>**----- End of picture text -----**<br> **==> picture [238 x 156] intentionally omitted <==** **----- Start of picture text -----**<br> 15<br>VGS = −6.5 V<br>−6.0 V<br>to −10 V<br>10 −5.5 V<br>−5.0 V<br>5<br>−4.5 V<br>−4.0 V<br>0<br>0 1 2 3 4 5<br>, DRAIN CURRENT (A)<br>D<br>−I<br>**----- End of picture text -----**<br> - −VDS, DRAIN−TO−SOURCE VOLTAGE (V) **Figure 14. On−Region Characteristics** **Figure 15. Transfer Characteristics** **==> picture [487 x 397] intentionally omitted <==** **----- Start of picture text -----**<br> 300 200<br>TJ = 25J = 25 = 25 ° C<br>250 TIDJ = 25= −1.5 A ° C 180<br>200 160<br>VGS = −6 VGS = −6 V = −6 V<br>150 140<br>100 120<br>VGS = −10 VGS = −10 V = −10 V<br>50 100<br>0 80<br>4 5 6 7 8 9 10 1 2 3 4<br>−VGS, GATE−TO−SOURCE VOLTAGE (V) −ID, DRAIN CURRENT (A)D, DRAIN CURRENT (A), DRAIN CURRENT (A)<br>Figure 16. On−Resistance vs. Gate−to−Source Figure 17. On−Resistance vs. Drain Current<br>Voltage and Gate Voltage<br>2.5 10000<br>ID = −1.5 A<br>VGS = −10 V T J = 175 ° C<br>2.0 1000 TJ = 150 ° C<br>TJ = 125 ° C<br>1.5 100<br>TJ = 85 ° C<br>1.0 10<br>T J = 25 ° C<br>0.5 1<br>0 0.1<br>−50 −25 0 25 50 75 100 125 150 175 5 15 25 35 45 55 65 75 85 95<br>TJ, JUNCTION TEMPERATURE ( ° C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE (m , DRAIN−TO−SOURCE RESISTANCE (m<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>, DRAIN−TO−SOURCE RE- DSS<br>−I<br>SISTANCE (NORMALIZED)<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [236 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>TJ = 25J = 25 = 25 ° C<br>180<br>160<br>VGS = −6 VGS = −6 V = −6 V<br>140<br>120<br>VGS = −10 VGS = −10 V = −10 V<br>100<br>80<br>1 2 3 4 5<br>−ID, DRAIN CURRENT (A)D, DRAIN CURRENT (A), DRAIN CURRENT (A)<br>) �<br>, DRAIN−TO−SOURCE RESISTANCE (m<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Figure 19. Drain−to−Source Leakage Current vs. Voltage** **Figure 18. On−Resistance Variation with Temperature** **www.onsemi.com** **8** **NTMC083NP10M5L** ## **TYPICAL CHARACTERISTICS − P−CHANNEL** **==> picture [245 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>Ciss<br>100 C oss<br>10<br>VGS = 0 V Crss<br>TJ = 25 ° C<br>f = 1 MHz<br>1<br>0.1 1 10 100<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 20. Capacitance Variation** **==> picture [243 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>td(on)<br>10 td(off)<br>tf<br>tr<br>VDS = −50 V<br>I D = −1.5 A<br>VGS = −6 V<br>1<br>1 10 100<br>RG, GATE RESISTANCE ( � )<br>t, TIME (ns)<br>**----- End of picture text -----**<br> **Figure 22. Resistive Switching Time Variation vs. Gate Resistance** **==> picture [236 x 155] intentionally omitted <==** **----- Start of picture text -----**<br> VGS ≤ 10 V<br>Single Pulse<br>10 TC = 25 ° C<br>300 � s<br>1<br>1 ms<br>10 ms<br>100 ms<br>0.1<br>RDS(on) Limit 1 s<br>Thermal Limit<br>Package Limit<br>0.01<br>0.1 1 10 100<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> **==> picture [150 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>**----- End of picture text -----**<br> **Figure 24. Maximum Rated Forward Biased Safe Operating Area** **==> picture [239 x 383] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 T J = 25 ° C<br>VDS = −50 V<br>8 I D = −1.5 A<br>7<br>6<br>Qgs Qgd<br>5<br>4<br>3<br>2<br>1<br>0<br>0 1 2 3 4 5 6 7 8<br>Qg, TOTAL GATE CHARGE (nC)<br>Figure 21. Gate−to−Source vs. Total Charge<br>1.5<br>VGS = 0 V<br>1.2<br>0.9<br>TJ = 125 ° C TJ = 25 ° C<br>0.6<br>0.3 TJ = 150 ° C TJ = −55 ° C<br>0 0.2 0.4 0.6 0.8 1.0 1.2<br>−VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>−V<br>, SOURCE CURRENT (A)<br>S<br>−I<br>**----- End of picture text -----**<br> **Figure 23. Diode Forward Voltage vs. Current** **==> picture [240 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10 TJ(initial) = 25 ° C<br>TJ(initial) = 100 ° C<br>1<br>1E−06 1E−05 1E−04 1E−03 1E−02<br>TAV, TIME IN AVALANCHE (s)<br> (A)<br>IPEAK<br>**----- End of picture text -----**<br> **Figure 25. Maximum Drain Current vs. Time in Avalanche** **www.onsemi.com** **9** **NTMC083NP10M5L** ## **TYPICAL CHARACTERISTICS − P−CHANNEL** **==> picture [491 x 157] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>Duty Cycle = 50%<br>20%<br>10 10%<br>5%<br>2%<br>1<br>1%<br>0.1<br>0.01<br>Single Pulse<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>C/W)<br>°<br> (<br>JA<br>�<br>Z<br>**----- End of picture text -----**<br> t, PULSE TIME (sec) **Figure 26. Thermal Response** **www.onsemi.com** **10** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [270 x 39] intentionally omitted <==** **----- Start of picture text -----**<br> SOIC8<br>CASE 751EB<br>ISSUE A<br>DATE 24 AUG 2017<br>**----- End of picture text -----**<br> Electronic versions are uncontrolled except when accessed directly from the Document Repository. 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