NTLUD4C26NTAG

## NTLUD4C26N 

## Power MOSFET 

## **30 V, 7.3 A, Dual N−Channel, 2.0x2.0x0.55 mm Cool** Ww ™ **UDFN6 Package** 

## **Features** 

- UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction 

- Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving 

- Ultra Low R DS(on) 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Applications** 

- Power Load Switch 

- Wireless Charging 

- DC−DC Converters 

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||**MOSFET**||
|---|---|---|
|**V(BR)DSS**|**RDS(on) MAX**|**ID MAX**|
|30 V|21 m @ 10 V|7.3 A|
||24 m @ 4.5 V||
||26 m @ 3.7 V||
||28 m @ 3.3 V||
||36 m @ 2.5 V||
||65 m @ 1.8 V||



**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) 

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D1 D2<br>G1 G2<br>S1 S2<br>Dual N−Channel MOSFET<br>**----- End of picture text -----**<br>


~~es~~ **Parameter Symbol** ~~es~~ **Value** ~~es~~ **Unit** Drain-to-Source Voltage VDSS 30 V ~~eses ee~~ Gate-to-Source Voltage VGS ± 12 V G1 ~~eses es~~ Continuous Drain Steady TA = 25 ° C ID 7.3 A Current (Note 1) State TA = 85 ° C 5.3 ~~eee~~ t ≤ 5 s TA = 25 ° C 9.1 ~~a |~~ ~~**Pe**~~ Power DissipaSteady TA = 25 ° C PD 1.70 W tion (Note 1) State t ≤ 5 s TA = 25 ° C 2.63 Continuous Drain Steady TA = 25 ° C ID 4.8 A Current (Note 2) State TA = 85 ° C 3.4 1 ~~| Pe espee~~ Power Dissipation (Note 2) TA = 25 ° C PD 0.72 W @ Pulsed Drain Current tp = 10 s IDM 22 A ~~es rees~~ ~~**es** ee~~ MOSFET Operating Junction and Storage TJ, -55 to ° C Temperature TSTG 150 Source Current (Body Diode) (Note 1) IS 3.0 A Lead Temperature for Soldering Purposes TL 260 ° C (1/8 ″ from case for 10 s) 

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MARKING<br>DIAGRAM<br>6 UDFN6 1<br>CASE 517BF AC M<br>COOL<br>1<br>AC= Specific Device Code<br>@ M = Date Code<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 

2. Surface-mounted on FR4 board using the minimum recommended pad size, 2 oz. Cu. 

(Top View) 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 3 of this data sheet. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2016 **May, 2016 − Rev. 2** 

**NTLUD4C26N/D** 

**NTLUD4C26N** 

## **THERMAL RESISTANCE RATINGS** 

|**THERMAL RESISTANCE RATINGS**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Max**|**Unit**|
|Junction-to-Ambient – Steady State (Note 3)|RθJA|73.6|°C/W|
|Junction-to-Ambient – t≤5 s (Note 3)|RθJA|47.6||
|Junction-to-Ambient – Steady State min Pad (Note 4)|RθJA|174.4||



3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 

4. Surface-mounted on FR4 board using the minimum recommended pad size, 2 oz. Cu. 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTIC**|**S **(TJ= 25°C unles|s otherwise specified)|s otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Units**|
|**OFF CHARACTERISTICS**||||||||
|Drain-to-Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A||30|||V|
|Drain-to-Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ|ID= 250�A, ref to 25°C|||7||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 24 V|TJ= 25°C|||1|�A|
||||TJ= 125°C|||10||
|Gate-to-Source Leakage Current|IGSS|VDS= 0 V, VGS=±12 V||||±100|nA|
|**ON CHARACTERISTICS**(Note 5)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||0.6||1.1|V|
|Negative Threshold Temp. Coefficient|VGS(TH)/TJ||||2.8||mV/°C|
|Drain-to-Source On Resistance|RDS(on)|VGS= 10 V, ID= 6.0 A|||17.5|21|m�|
|||VGS= 4.5 V, ID= 5.0 A|||20|24||
|||VGS= 3.7 V, ID= 3.0 A|||21|26||
|||VGS= 3.3 V, ID= 3.0 A|||22|28||
|||VGS= 2.5 V, ID= 2.0 A|||25|36||
|||VGS= 1.8 V, ID= 1.0 A|||40|65||
|Forward Transconductance|gFS|VDS= 1.5 V, ID= 5.0 A|||23||S|
|**CHARGES, CAPACITANCES & GATE RESISTANCE**||||||||
|Input Capacitance|CISS|VGS= 0 V, f = 1 MHz,<br>VDS= 15 V|||460||pF|
|Output Capacitance|COSS||||225|||
|Reverse Transfer Capacitance|CRSS||||27|||
|Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 10 V;<br>ID= 5.0 A|||5.0|8.0|nC|
|Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 15 V;<br>ID= 5.0 A|||5.5|9.0|nC|
|Threshold Gate Charge|QG(TH)||||0.55|||
|Gate-to-Source Charge|QGS||||2.5|||
|Gate-to-Drain Charge|QGD||||1.1|||
|**SWITCHING CHARACTERISTICS, VGS = 4.5 V**(Note 6)||||||||
|Turn-On Delay Time|td(ON)|VGS= 4.5 V, VDD= 15 V,<br>ID= 5.0 A, RG= 1�|||5||ns|
|Rise Time|tr||||15|||
|Turn-Off Delay Time|td(OFF)||||13|||
|Fall Time|tf||||1.7|||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

5. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2%. 

6. Switching characteristics are independent of operating junction temperatures. 

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**2** 

## **NTLUD4C26N** 

**ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTIC**|**S **(TJ= 25°C unles|s otherwise specified)|s otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Units**|
|**DRAIN-SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 2.0 A|TJ= 25°C||0.7|1.0|V|
||||TJ= 125°C||0.6|||
|Reverse Recovery Time|tRR|VGS= 0 V, dIs/dt = 100 A/�s,<br>IS= 2.0 A|||18.5||ns|
|Charge Time|ta||||9.3|||
|Discharge Time|tb||||9.1|||
|Reverse Recovery Charge|QRR||||7.8||nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

5. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2%. 

6. Switching characteristics are independent of operating junction temperatures. 

## **DEVICE ORDERING INFORMATION** 

|**DEVICE ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**†|
|NTLUD4C26NTAG|UDFN6<br>(Pb−Free)|3000 / Tape & Reel|
|NTLUD4C26NTBG|UDFN6<br>(Pb−Free)|3000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**NTLUD4C26N** 

## **TYPICAL CHARACTERISTICS** 

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25 25<br>T J  = 25 ° C VDS = 5 V<br>20 V GS  = 1.8 V 20<br>15 10 V to2.0 V 15 TJ = 125 ° C<br>1.6 V TJ = 25 ° C<br>10 10<br>5 5<br>1.2 V °<br>TJ = −55 C<br>0 0<br>0 1 2 3 4 5 0 0.4 0.8 1.2 1.6 2<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>30 50<br>TJ = 25 ° C TJ = 25 ° C<br>28 ID = 6 A 45 V GS  = 1.8 V<br>26 40<br>24 35<br>22 30<br>VGS = 3.7 V VGS = 2.5 V<br>20 25<br>VGS = 3.3 V<br>18 20<br>VGS = 4.5 V<br>16 15 VGS = 10 V<br>2 3 4 5 6 7 8 9 10 1 3 5 7 9 11 13 15 17 19<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>1.5 100000<br>VGS = 10 V<br>ID = 6 A 10000<br>1.3 TJ = 150 ° C<br>1000<br>T J  = 125 ° C<br>1.1 100<br>10<br>0.9<br>1 TJ = 85 ° C<br>VGS = 0 V<br>0.7 0<br>−50 −25 0 25 50 75 100 125 150 0 10 20 30<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>, DRAIN−TO−SOURCE  , DRAIN−TO−SOURCE<br>RESISTANCE (m RESISTANCE (m<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>, DRAIN−TO−SOURCE<br>IDSS<br>DS(on) RESISTANCE (Normalized)<br>R<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

**Figure 6. Drain−to−Source Leakage Current vs. Voltage** 

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**NTLUD4C26N** 

## **TYPICAL CHARACTERISTICS** 

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1000 10 30<br>QT<br>C iss<br>25<br>8<br>Coss 20<br>6<br>100 15<br>4 Qgs Q gd 10<br>Crss<br>TJ = 25 ° C 2 T J  = 25 ° C 5<br>VGS = 0 V VDS = 15 V<br>f = 1 MHz ID = 5 A<br>10 0 0<br>0 5 10 15 20 25 30 0 2 4 6 8 10<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)<br>Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge<br>100.0 2.0<br>VI DDD  = 15 A = 15 V td(off) t f VGS = 0 V TJ = −55 ° C<br>VGS = 4.5 V<br>tr<br>TJ = 25 ° C<br>10.0 1.0<br>td(on) T J  = 125 ° C<br>1.0 0.0<br>1 10 100 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current<br>vs. Gate Resistance<br>100<br>1.80<br>1.60<br>I D = 250  � A<br>10 1.40<br>10  � s<br>1.20<br>100  � s 1.00<br>1<br>VTGS A  = 25 < 10 V ° C 1 ms 0.80<br>0.60<br>Single Pulse Response 10 ms<br>0.1<br>RDS(on) Limit dc 0.40<br>Thermal Limit 0.20<br>Package Limit<br>0.01 0.00<br>0.1 1 10 100 −50 −25 0 25 50 75 100 125 150 175<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, TEMPERATURE ( ° C)<br>C, CAPACITANCE (pF)<br>, DRAIN−TO−SOURCE VOLTAGE<br>, GATE−TO−SOURCE VOLTAGE (V)<br>DS<br>GS V<br>V<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>IS<br>, (V)<br>GS(th)<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Rated Forward Biased Safe Operating Area** 

**Figure 12. Threshold Voltage** 

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**NTLUD4C26N** 

## **TYPICAL CHARACTERISTICS** 

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400<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>1.E−04 1.E−03 1.E−02 1.E−01 1.E+00 1.E+01 1.E+02 1.E+03<br>SINGLE PULSE TIME ( ° C)<br>POWER (W)<br>**----- End of picture text -----**<br>


**Figure 13. Single Pulse Maximum Power Dissipation** 

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1000<br>50% Duty Cycle<br>100<br>20%<br>10 10%<br>5%<br>1<br>2%<br>0.1<br>1%<br>0.01<br>Single Pulse<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>Figure 14. Thermal Response<br>C/W)<br>( °<br>, EFFECTIVE TRANSIENT THERMAL RESPONSE<br>JA<br>�<br>R<br>**----- End of picture text -----**<br>


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**NTLUD4C26N** 

## **PACKAGE DIMENSIONS** 

**UDFN6 2x2, 0.65P** CASE 517BF ISSUE B 

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NOTES:<br>D A EXPOSED Cu MOLD CMPD 1. DIMENSIONING AND TOLERANCING PER<br>ASME Y14.5M, 1994.<br>B 2. CONTROLLING DIMENSION: MILLIMETERS.<br>ÉÉÉÇÇÇ ÇÇ 3. DIMENSION b APPLIES TO PLATED<br>TERMINAL AND IS MEASURED BETWEEN<br>ÇÇÇ ÉÉ 0.15 AND 0.30 mm FROM THE TERMINAL TIP.<br>PLATING 4. COPLANARITY APPLIES TO THE EXPOSED<br>DETAIL B PAD AS WELL AS THE TERMINALS.<br>PIN ONE a  4 SSS OPTIONAL MILLIMETERS<br>REFERENCE ÍÍÍ E CONSTRUCTIONS DIM MIN MAX<br>A 0.45 0.55<br>ÍÍÍ A1 0.00 0.05<br>0.10 C A3 0.13 REF<br>ÍÍÍ L L b 0.25 0.35<br>0.10 C D 2.00 BSC<br>TOP VIEW L1 D2E 0.572.00 BSC0.77<br>e o wor Ut E2 0.90 1.10<br>DETAIL B A DETAIL A e 0.65 BSC<br>0.10 C A3 CONSTRUCTIONSOPTIONAL KF 0.25 REF0.15 BSC<br>L 0.20 0.30<br>ath c L1 --- 0.10<br>0.08 C<br>A1<br>NOTE 4 SIDE VIEW ~ O F Tty C SEATINGPLANE<br>RECOMMENDED<br>MOUNTING FOOTPRINT<br>0.10 C A B<br>1.74<br>DETAIL A D2 D2 0.772X<br>F<br>1<br>3<br>1.10<br>L 6X 0.47<br>spe ‘pa<br>E2 2.30<br>0.10 C A B<br>PACKAGE<br>OUTLINE<br>K 6 4 6X b<br>1<br>e 0.10 C A B PITCH0.65<br>0.05 C NOTE 3 6X 0.35<br>oH BOTTOM VIEW Ee e o Te DIMENSIONS: MILLIMETERS i<br>**----- End of picture text -----**<br>


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**NTLUD4C26N/D** 

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