NTLUD3A260PZTAG

## NTLUD3A260PZ 

## Power MOSFET 

## **−20 V, −2.1 A, Cool** Ww ™ **Dual P−Channel, ESD, 1.6x1.6x0.55 mm UDFN Package** 

## **Features** 

- UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction 

- Low Profile UDFN 1.6x1.6x0.55 mm for Board Space Saving 

- ESD Protected 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Applications** 

- High Side Load Switch 

## **http://onsemi.com** 

||**MOSFET**||
|---|---|---|
|**V(BR)DSS**|**RDS(on) MAX**|**ID MAX**|
|−20 V|200 m @ −4.5 V|−2.1 A|
||290 m @ −2.5 V||
||390 m @ −1.8 V||
||650 m @ −1.5 V||



- PA Switch 

- Optimized for Power Management Applications for Portable Products, such as Cell Phones, PMP, DSC, GPS, and others 

**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) 

|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise stated)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise stated)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise stated)|C unless otherwise stated)|C unless otherwise stated)||
|---|---|---|---|---|---|
|**Parameter**<br>~~es~~|||**Symbol**<br>~~es~~<br>~~ee~~|**Value**<br>~~es~~<br>~~es~~|**Units**<br>~~es~~|
|Drain-to-Source Voltage<br>~~es~~<br>~~es~~<br>~~ll~~|||VDSS<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~ee~~<br>es|−20<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|V<br>~~es~~<br>~~es~~|
|Gate-to-Source Voltage<br>~~es~~<br>~~ll~~<br>~~|~~|||VGS<br>~~ee~~<br>~~es~~<br>es<br>~~**Pe**~~|±8.0<br>~~es~~<br>~~es~~<br>~~es~~<br>~~**Pe**~~|V<br>~~es~~|
|Continuous Drain<br>Current (Note 1)|Steady<br>State<br>~~ll~~|TA= 25°C<br>~~ll~~<br>~~|~~|ID<br>es <br>~~**Pe**~~|−1.7<br>~~es~~<br>~~**Pe**~~|A|
|||TA= 85°C<br>~~ll~~<br>~~|~~||−1.2<br> ~~es~~<br>~~**Pe**~~||
||t≤5 s<br>~~PT~~<br>~~[Ty~~|TA= 25°C<br>~~PT~~<br>~~[Ty~~||−2.1<br>~~Pe~~<br>~~LT]~~||
|Power Dissipa-<br>tion (Note 1)|Steady<br>State<br>~~PT~~<br>~~[Ty~~|TA= 25°C<br>~~PT~~<br>~~[Ty~~|PD|0.8<br>~~Pe~~<br>~~LT]~~|W<br>~~ee~~|
||t≤5 s<br>~~[Ty~~|TA= 25°C<br>~~[Ty~~<br>~~|~~||1.3<br>~~LT]~~<br>~~ee~~||
|Continuous Drain<br>Current (Note 2)<br>~~a ~~|Steady<br>State<br> ~~ee~~|TA= 25°C<br>~~ee~~<br>~~|~~|ID<br>~~ee~~<br>~~es~~|−1.3<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~|
|||TA= 85°C<br>~~ee~~<br>~~|~~<br>~~ee~~||−0.9<br>~~ee~~<br>~~ee~~<br>~~|~~<br>~~ee~~||
|Power Dissipation (Note 2)<br>~~es~~||TA= 25°C<br>~~|~~<br>~~es~~<br>~~ee~~<br>~~eeee~~|PD<br>~~es~~<br>~~es~~<br>~~es~~|0.5<br>~~ee~~<br>~~es~~<br>~~ee~~|W<br>~~ee~~<br>~~es~~|
|Pulsed Drain Current<br>~~es~~||tp = 10 s<br>~~ee~~<br>~~es~~<br>~~eeee~~|IDM<br>~~es ~~<br>~~es~~<br>~~es~~|−8.0<br> ~~ee~~<br>~~es~~|A<br>~~es~~|
|Operating Junction and Storage<br>Temperature<br>~~ee ee~~<br>~~es~~|||TJ,<br>TSTG<br>~~es~~<br>~~es~~|-55 to<br>150<br>~~ee~~|°C|
|Source Current (Body Diode) (Note 2)<br>~~es~~|||IS<br>~~es~~|−0.6<br>~~ee~~|A|
|Lead Temperature for Soldering Purposes<br>(1/8″from case for 10 s)<br>~~es~~|||TL<br>~~es~~|260<br>~~ee~~|°C|



Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

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D1 D2<br>G1 G2<br>S1 S2<br>P−Channel MOSFET<br>**----- End of picture text -----**<br>


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MARKING<br>DIAGRAM<br>6 UDFN6 1<br>CASE 517AT AD M<br>@ 1 ,. COOL<br>AD= Specific Device Code<br>M = Date Code<br>; = Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 

2. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm[2] , 2 oz. Cu. 

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(Top View)<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 

Publication Order Number: **NTLUD3A260PZ/D** 

**1** 

© Semiconductor Components Industries, LLC, 2010 **September, 2010 − Rev. 1** 

**NTLUD3A260PZ** 

## **THERMAL RESISTANCE RATINGS** 

|**THERMAL RESISTANCE RATINGS**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Max**|**Units**|
|Junction-to-Ambient – Steady State (Note 3)|RθJA|155|°C/W|
|Junction-to-Ambient – t≤5 s (Note 3)|RθJA|100||
|Junction-to-Ambient – Steady State min Pad (Note 4)|RθJA|245||



|**ELECTRICAL CHARACTERISTICS **(TJ= 25°C unless otherwise specified)|**ELECTRICAL CHARACTERISTICS **(TJ= 25°C unless otherwise specified)|**ELECTRICAL CHARACTERISTICS **(TJ= 25°C unless otherwise specified)|**ELECTRICAL CHARACTERISTICS **(TJ= 25°C unless otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Units**|
|**OFF CHARACTERISTICS**||||||||
|Drain-to-Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= −250�A||−20|||V|
|Drain-to-Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ|ID= −250�A, ref to 25°C|||−10||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= −20 V|TJ= 25°C|||−1.0|�A|
||||TJ= 125°C|||−10||
|Gate-to-Source Leakage Current|IGSS|VDS= 0 V, VGS=±8.0 V||||±10|�A|
|**ON CHARACTERISTICS**(Note 5)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= −250�A||−0.4||−1.0|V|
|Negative Threshold Temp. Coefficient|VGS(TH)/TJ||||2.8||mV/°C|
|Drain-to-Source On Resistance|RDS(on)|VGS= −4.5 V, ID= −2.0 A|||160|200|m�|
|||VGS= −2.5 V, ID= −1.2 A|||226|290||
|||VGS= −1.8 V, ID= −0.24 A|||300|390||
|||VGS= −1.5 V, ID= −0.18 A|||390|650||
|Forward Transconductance|gFS|VDS= −10 V, ID= −1.5 A|||3.7||S|
|**CHARGES, CAPACITANCES & GATE RESISTANCE**||||||||
|Input Capacitance|CISS|VGS= 0 V, f = 1 MHz,<br>VDS= −10 V|||300||pF|
|Output Capacitance|COSS||||34|||
|Reverse Transfer Capacitance|CRSS||||29|||
|Total Gate Charge|QG(TOT)|VGS= −4.5 V, VDS= −10 V;<br>ID= −1.7 A|||4.2||nC|
|Threshold Gate Charge|QG(TH)||||0.3|||
|Gate-to-Source Charge|QGS||||0.7|||
|Gate-to-Drain Charge|QGD||||1.1|||
|**SWITCHING CHARACTERISTICS, VGS = 4.5 V**(Note 6)||||||||
|Turn-On Delay Time|td(ON)|VGS= −4.5 V, VDD= −10 V,<br>ID= −1.5 A, RG= 1�|||17.4||ns|
|Rise Time|tr||||32.3|||
|Turn-Off Delay Time|td(OFF)||||149|||
|Fall Time|tf||||74|||
|**DRAIN-SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= −0.6 A|TJ= 25°C||0.8|1.2|V|
||||TJ= 125°C||0.68|||
|Reverse Recovery Time|tRR|VGS= 0 V, dis/dt = 100 A/�s,<br>IS= −1.0 A|||10.6||ns|
|Charge Time|ta||||8.7|||
|Discharge Time|tb||||1.9|||
|Reverse Recovery Charge|QRR||||5.1||nC|



3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 

4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm[2] , 2 oz. Cu. 

5. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2%. 

6. Switching characteristics are independent of operating junction temperatures. 

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**2** 

**NTLUD3A260PZ** 

## **TYPICAL CHARACTERISTICS** 

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10 5<br>9 TJ = 25 ° C VGS = −4.5 V −4.0 V −3.5 V VDS ≤  −10 V<br>8 4<br>−3.0 V<br>7<br>6 3<br>−2.5 V<br>5<br>4 2 T J  = 25 ° C<br>3 −2.0 V<br>2 −1.8 V 1<br>1 TJ = 125 ° C<br>−1.5 V TJ = −55 ° C<br>0 0<br>0 1 2 3 4 0 0.5 1.0 1.5 2.0 2.5 3.0<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>0.80 0.500<br>TJ = 25 ° C TJ = 25 ° C<br>0.70 ID = −2.0 A<br>−1.8 V<br>0.400<br>0.60<br>0.50 −2.5 V<br>0.300<br>0.40<br>0.30<br>0.200<br>0.20 VGS = −4.5 V<br>0.10 0.100<br>1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1 2 3 4 5 6 7 8 9 10<br>−VGS, GATE VOLTAGE (V) −ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>1.6 10,000<br>1.5 VGS = −4.5 V<br>ID = −2.0 A<br>1.4<br>1.3 TJ = 125 ° C<br>1.2<br>1000<br>1.1<br>1.0<br>0.9<br>TJ = 85 ° C<br>0.8<br>0.7 100<br>−50 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20<br>TJ, JUNCTION TEMPERATURE ( ° C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>D D<br>−I −I<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (<br>DS(on) DS(on)<br>R R<br>) �<br>, LEAKAGE (nA)<br>DSS<br>, NORMALIZED DRAIN−TO− −I<br>SOURCE RESISTANCE (<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

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Figure 6. Drain−to−Source Leakage Current<br>vs. Voltage<br>**----- End of picture text -----**<br>


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**3** 

**NTLUD3A260PZ** 

## **TYPICAL CHARACTERISTICS** 

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500 5 12<br>VGS = 0 V QT<br>TJ = 25 ° C 10<br>400 f = 1 MHz 4<br>Ciss VDS VGS 8<br>300 3<br>QGS QGD 6<br>200 2<br>4<br>100 C oss 1 IVD DS  = −1.7 A = −10 V 2<br>0 Crss 0 TJ = 25 ° C 0<br>0 2 4 6 8 10 12 14 16 18 20 0 1 2 3 4<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)<br>Figure 7. Capacitance Variation Figure 8. Gate−to−Source and<br>Drain−to−Source Voltage vs. Total Charge<br>1000 100<br>VGS = −4.5 V<br>VDD = −10 V<br>ID = −1.5 A td(off)<br>100<br>tf TJ = 125 ° C<br>10<br>tr<br>10 td(on)<br>TJ = 25 ° C<br>TJ = −55 ° C<br>1 1<br>1 10 100 0.2 0.4 0.6 0.8 1.0 1.2<br>RG, GATE RESISTANCE ( � ) −VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current<br>vs. Gate Resistance<br>0.85 200<br>ID = −250  � A<br>0.75 175<br>150<br>0.65<br>125<br>0.55<br>100<br>0.45<br>75<br>0.35<br>50<br>0.25<br>25<br>0.15 0<br>−50 −25 0 25 50 75 100 125 150 1.E−05 1.E−03 1.E−01 1.E+01 1.E+03<br>TJ, JUNCTION TEMPERATURE ( ° C) SINGLE PULSE TIME (s)<br>−V<br>DS<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>−V , DRAIN−TO−SOURCE VOLTAGE (V)<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>S<br>−I<br> (V)<br>GS(th)<br>−V POWER (W)<br>**----- End of picture text -----**<br>


**Figure 11. Threshold Voltage** 

**Figure 12. Single Pulse Maximum Power Dissipation** 

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**4** 

**NTLUD3A260PZ** 

## **TYPICAL CHARACTERISTICS** 

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10<br>10  � s<br>1<br>100  � s<br>1 ms<br>0  ≤  VGS ≤  −8 V<br>0.1 SINGLE PULSE 10 ms<br>TC = 25 ° C<br>RDS(on) LIMIT<br>THERMAL LIMIT dc<br>PACKAGE LIMIT<br>0.01<br>0.1 1 10 100<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>, DRAIN CURRENT (AMPS)<br>D<br>−I<br>**----- End of picture text -----**<br>


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R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE<br>**----- End of picture text -----**<br>


**Figure 13. Maximum Rated Forward Biased Safe Operating Area** 

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160<br>R � JA = 155 ° C/W<br>120<br>80 Duty Cycle = 0.5<br>0.05 0.02 0.01<br>40 0.2<br>0.1<br>Single Pulse<br>0<br>1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03<br>t, TIME (s)<br>**----- End of picture text -----**<br>


**Figure 14. FET Thermal Response** 

## **DEVICE ORDERING INFORMATION** 

|**DEVICE ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**†|
|NTLUD3A260PZTAG|UDFN6<br>(Pb−Free)|3000 / Tape & Reel|
|NTLUD3A260PZTBG|UDFN6<br>(Pb−Free)|3000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**5** 

**NTLUD3A260PZ** 

## **PACKAGE DIMENSIONS** 

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UDFN6 1.6x1.6, 0.5P<br>CASE 517AT−01<br>ISSUE O<br>NOTES:<br>D A 1. DIMENSIONING AND TOLERANCING PER<br>ASME Y14.5M, 1994.<br>2X B 2. CONTROLLING DIMENSION: MILLIMETERS.<br>L 3. DIMENSION b APPLIES TO PLATED TERMINAL<br>anf 0.10 C L1 AND IS MEASURED BETWEEN 0.15 AND<br>0.30 mm FROM TERMINAL.<br>Tt om DETAIL A 4. COPLANARITY APPLIES TO THE EXPOSED<br>PIN ONE E OPTIONAL PAD AS WELL AS THE TERMINALS.<br>REFERENCE ÉÉ CONSTRUCTION MILLIMETERS<br>DIM MIN MAX<br>2X ÉÉ A 0.45 0.55<br>a 0.10 C H EXPOSED Cu MOLD CMPD A1A3 0.000.13 REF0.05<br>TOP VIEW b 0.20 0.30<br>ÉÉÉ D 1.60 BSC<br>A A3 E 1.60 BSC<br>DETAIL B (A3) ÉÉÉÈÈÈ e 0.50 BSC<br>0.05 C A1 DETAIL B D1D2E1K 0.541.140.380.20 1.340.580.74−−−<br>6X 0.05 C OPTIONAL L 0.15 0.35<br>TY SIDE VIEW A1 C [SEATING] PLANE CONSTRUCTION L1 −−− 0.10<br>DETAIL A D1 2X MOUNTING FOOTPRINT*SOLDERMASK DEFINED<br>D2<br>6X K 1 3 1.34<br>2X<br>0.58<br>E1<br>6 4<br>6X b<br>6X L<br>e 0.10 C A B 6X<br>0.48 0.74 1.90<br>0.05 C NOTE 3<br>BOTTOM VIEW<br>1<br>0.50 PITCH<br>6X<br>wp 0.32<br>**----- End of picture text -----**<br>


- DIMENSIONS: MILLIMETERS 

- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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