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NTLLD4901NFTWG
Dual MOSFET, N Channel, 30 V, 9.6 A, 0.014 ohm, WDFN, Surface Mount
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- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- No. of Pins: 8Pins
- Channel Type: N Channel
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 1.88W
- Rds(on) Test Voltage: 4.5V
- On Resistance Rds(on): 0.014ohm
- Transistor Case Style: WDFN
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 9.6A
- Power Dissipation N Channel: 1.88W
- Power Dissipation P Channel: 1.88W
- Gate Source Threshold Voltage Max: 1.2V
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 9.6A
- Continuous Drain Current Id P Channel: 9.6A
- Drain Source On State Resistance N Channel: 0.014ohm
- Drain Source On State Resistance P Channel: 0.014ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.458 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## NTLLD4901NF ## Dual N-Channel Power MOSFET with Integrated Schottky ## **30 V, High Side 11 A / Low Side 13 A, Dual N−Channel, WDFN (3 mm x 3 mm)** ## **Features** - Co−Packaged Power Stage Solution to Minimize Board Space - Low Side MOSFET with Integrated Schottky - Minimized Parasitic Inductances - Optimized Devices to Reduce Power Losses - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Applications** - DC−DC Converters - System Voltage Rails - Point of Load **http://onsemi.com** **==> picture [190 x 265] intentionally omitted <==** **----- Start of picture text -----**<br> a V(BR)DSS RDS(ON) ee MAX eee ID MAX<br>17.4 m @ 10 V<br>Q1 Top FET<br>11 A<br>30 V<br>25 m @ 4.5 V<br>Q2 Bottom 13.3 m @ 10 V<br>13 A<br>FET 30 V<br>20 m @ 4.5 V<br>D1 (2, 3, 4, 9)<br>(1) G1<br>S1/D2 (10)<br>(8) G2<br>S2 (5, 6, 7)<br>**----- End of picture text -----**<br> **==> picture [90 x 85] intentionally omitted <==** **----- Start of picture text -----**<br> PIN CONNECTIONS<br>D1 4 5 S2<br>L] L]<br>D1 L 3 9 10 L] 6 S2<br>D1 S1/D2<br>D1 L 2 L] 7 S2<br>G1 L 1 L] 8 G2<br>(Bottom View)<br>**----- End of picture text -----**<br> **==> picture [134 x 114] intentionally omitted <==** **----- Start of picture text -----**<br> MARKING<br>DIAGRAM<br>1<br>WDFN8 4901<br>CASE 511BP AYWW<br>1<br>4901 = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>**----- End of picture text -----**<br> (Note: Microdot may be in either location) ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: **NTLLD4901NF/D** **1** © Semiconductor Components Industries, LLC, 2012 **July, 2012 − Rev. 1** ## **NTLLD4901NF** ## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) |**MAXIMUM RATINGS**(TJ= 25°C unless otherwise stated)|**MAXIMUM RATINGS**(TJ= 25°C unless otherwise stated)|||||| |---|---|---|---|---|---|---| |**Parameter**||||**Symbol**|**Value**|**Unit**| |Drain−to−Source Voltage|||Q1|VDSS|30|V| |Drain−to−Source Voltage|||Q2|||| |Gate−to−Source Voltage|||Q1|VGS|±20|V| |Gate−to−Source Voltage|||Q2|||| |Continuous Drain Current R�JA(Note 1)|Steady<br>State|TA= 25°C|Q1|ID|8.3|A| |||TA= 85°C|||6.0|| |||TA= 25°C|Q2||9.6|| |||TA= 85°C|||6.9|| |Power Dissipation<br>R�JA(Note 1)||TA= 25°C|Q1|PD|1.82|W| ||||Q2||1.88|| |Continuous Drain Current R�JA ≤10 s (Note 1)||TA= 25°C|Q1|ID|11|A| |||TA= 85°C|||8|| |||TA= 25°C|Q2||13|| |||TA= 85°C|||9.1|| |Power Dissipation<br>R�JA ≤10 s (Note 1)||TA= 25°C|Q1|PD|3.23|W| ||||Q2||3.27|| |Continuous Drain Current<br>R�JA(Note 2)||TA= 25°C|Q1|ID|5.5|A| |||TA= 85°C|||4.0|| |||TA= 25°C|Q2||6.3|| |||TA= 85°C|||4.5|| |Power Dissipation<br>R�JA(Note 2)||TA= 25°C|Q1|PD|0.80|W| ||||Q2||0.81|| |Pulsed Drain Current||TA = 25°C<br>tp = 10�s|Q1|IDM|65|A| ||||Q2||70|| |Operating Junction and Storage Temperature|||Q1|TJ, TSTG|−55 to +150|°C| ||||Q2|||| |Source Current (Body Diode)|||Q1|IS|4.2|A| ||||Q2||6.0|| |Drain to Source DV/DT||||dV/dt|6|V/ns| |Single Pulse Drain−to−Source Avalanche Energy (TJ= 25C, VDD=<br>VGS= 10 V, IL= 9.0 Apk, L = 0.3 mH, RG= 25�)||50 V,|Q1|EAS|12|mJ| |Single Pulse Drain−to−Source Avalanche Energy (TJ= 25C, VDD=<br>VGS= 10 V, IL= 9.5 Apk, L = 0.3 mH, RG= 25�)||50 V,|Q2|EAS|13.5|| |Lead Temperature for Soldering Purposes<br>(1/8” from case for 10 s)||||TL|260|°C| Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu 2. Surface−mounted on FR4 board using the minimum recommended pad size of 90 mm[2] **http://onsemi.com** **2** **NTLLD4901NF** ## **THERMAL RESISTANCE MAXIMUM RATINGS** |**THERMAL RESISTANCE MAXIMUM RATINGS**||||| |---|---|---|---|---| |**Parameter**|**FET**|**Symbol**|**Value**|**Unit**| |Junction−to−Ambient – Steady State (Note 3)|Q1|R�JA|68.8|°C/W| ||Q2||66.4|| |Junction−to−Ambient – Steady State (Note 4)|Q1|R�JA|156.4|| ||Q2||153.9|| |Junction−to−Ambient – (t≤10 s) (Note 3)|Q1|R�JA|38.7|| ||Q2||38.2|| 3. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu 4. Surface−mounted on FR4 board using the minimum recommended pad size of 90 mm[2] ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTE**|**RISTIC**|**S**(TJ= 25°C|unless otherwise specified)|unless otherwise specified)||||| |---|---|---|---|---|---|---|---|---| |**Parameter**|**FET**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||||||| |Drain−to−Source Break-<br>down Voltage|Q1|V(BR)DSS|VGS= 0 V, I|D= 250�A|30|||V| ||Q2||||30|||| |Drain−to−Source Break-<br>down Voltage Temperature<br>Coefficient|Q1|V(BR)DSS<br>/ TJ||||18||mV /<br>°C| ||Q2|||||15||| |Zero Gate Voltage Drain<br>Current|Q1|IDSS|VGS= 0 V,<br>VDS= 24 V|TJ= 25°C|||1|�A| |||||TJ= 125°C|||10|| ||Q2||VGS= 0 V,<br>VDS= 24 V|TJ= 25°C|||500|| |Gate−to−Source Leakage<br>Current|Q1|IGSS|VGS= 0 V, VDS =±20 V||||±100|nA| ||Q2||||||±100|| |**ON CHARACTERISTICS**(Note 5)||||||||| |Gate Threshold Voltage|Q1|VGS(TH)|VGS= VDS, ID= 250�A||1.2||2.2|V| ||Q2||||1.2||2.2|| |Negative Threshold Temper-<br>ature Coefficient|Q1|VGS(TH)/<br>TJ||||4.5||mV /<br>°C| ||Q2|||||4.0||| |Drain−to−Source On Resist-<br>ance|Q1|RDS(on)|VGS= 10 V|ID= 9 A||14|17.4|m�| ||||VGS= 4.5 V|ID= 9 A||20|25|| ||Q2||VGS= 10 V|ID= 11 A||11|13.3|| ||||VGS= 4.5 V|ID= 11 A||16|20|| |Forward Transconductance|Q1|gFS|VDS= 1.5 V, ID= 9 A|||16||S| ||Q2|||||18||| |**CHARGES, CAPACITANCES**|**& GATE RESISTANCE**|||||||| |Input Capacitance|Q1|CISS|VGS= 0 V, f = 1 MHz, VDS= 15 V|||605||pF| ||Q2|||||660||| |Output Capacitance|Q1|COSS||||190||| ||Q2|||||325||| |Reverse Capacitance|Q1|CRSS||||102||| ||Q2|||||17.5||| 5. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2% 6. Switching characteristics are independent of operating junction temperatures. **http://onsemi.com** **3** ## **NTLLD4901NF** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTE**|**RISTIC**|**S**(TJ= 25°C|unless otherwise specified)|unless otherwise specified)||||| |---|---|---|---|---|---|---|---|---| |**Parameter**|**FET**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**CHARGES, CAPACITANCES**|**& GATE RESISTANCE**|||||||| |Total Gate Charge|Q1|QG(TOT)|VGS= 4.5 V, VDS= 15 V; ID= 9 A|||6.5||nC| ||Q2|||||5.0||| |Threshold Gate Charge|Q1|QG(TH)||||1.1||| ||Q2|||||1.1||| |Gate−to−Source Charge|Q1|QGS||||1.9||| ||Q2|||||2.0||| |Gate−to−Drain Charge|Q1|QGD||||3.2||| ||Q2|||||1.46||| |Total Gate Charge|Q1|QG(TOT)|VGS= 10 V, VDS= 15 V; ID= 9 A|||12||nC| ||Q2|||||10.6||| |**SWITCHING CHARACTERISTICS**(Note 6)||||||||| |Turn−On Delay Time|Q1|td(ON)|VGS= 4.5 V, VDS= 15 V,<br>ID= 9 A, RG= 3.0�|||8.0||ns| ||Q2|||||7.5||| |Rise Time|Q1|tr||||7.2||| ||Q2|||||11.2||| |Turn−Off Delay Time|Q1|td(OFF)||||11||| ||Q2|||||11.6||| |Fall Time|Q1|tf||||3.3||| ||Q2|||||1.9||| |**SWITCHING CHARACTERISTICS**(Note 6)||||||||| |Turn−On Delay Time|Q1|td(ON)|VGS= 10 V, VDS= 15 V,<br>ID= 9 A, RG= 3.0�|||4.2||ns| ||Q2|||||4.3||| |Rise Time|Q1|tr||||11.6||| ||Q2|||||11.4||| |Turn−Off Delay Time|Q1|td(OFF)||||14.1||| ||Q2|||||14.3||| |Fall Time|Q1|tf||||2.0||| ||Q2|||||1.3||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||| |Forward Voltage|Q1|VSD|VGS= 0 V,<br>IS= 3 A|TJ= 25°C||0.80|1.2|V| |||||TJ= 125°C||0.65||| ||Q2||VGS= 0 V,<br>IS= 2 A|TJ= 25°C||0.50|0.80|| |||||TJ= 125°C||0.45||| 5. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2% 6. Switching characteristics are independent of operating junction temperatures. **http://onsemi.com** **4** ## **NTLLD4901NF** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTE**|**RISTIC**|**S**(TJ= 25°C|unless otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**FET**|**Symbol**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Reverse Recovery Time|Q1|tRR|VGS= 0 V, dIS/dt= 100 A/�s, IS= 3 A||17.9||ns| ||Q2||||23.3||| |Charge Time|Q1|ta|||9.0||| ||Q2||||11.3||| |Discharge Time|Q1|tb|||9.0||| ||Q2||||12||| |Reverse Recovery Charge|Q1|QRR|||8.0||nC| ||Q2||||12||| |**PACKAGE PARASITIC VALUES**|||||||| |Source Inductance|Q1|LS|TA= 25°C||0.36||nH| ||Q2||||0.36||| |Drain Inductance|Q1|LD|||0.054||nH| ||Q2||||0.054||| |Gate Inductance|Q1|LG|||1.3||nH| ||Q2||||1.3||| |Gate Resistance|Q1|RG|||0.8||�| ||Q2||||0.8||| 5. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2% 6. Switching characteristics are independent of operating junction temperatures. ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**†| |NTLLD4901NFTWG|WDFN8<br>(Pb−Free)|3000 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **http://onsemi.com** **5** **NTLLD4901NF** ## **TYPICAL CHARACTERISTICS − Q1** **==> picture [239 x 157] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>10 V 3.8 V 3.6 V 3.4 V<br>4.5 V thru 4 V<br>25<br>7.5 V 3.2 V<br>20<br>3.0 V<br>15<br>2.8 V<br>10<br>VGS = 2.2 V 2.6 V<br>5<br>2.4 V<br>0<br>0 1 2 3 4 5<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> VDS, DRAIN−TO−SOURCE VOLTAGE (V) **Figure 1. On−Region Characteristics** **==> picture [244 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 55<br>50 ID = 10 A<br>45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>2 3 4 5 6 7 8 9 10<br>VGS, GATE−TO−SOURCE VOLTAGE (V)<br>) �<br>, DRAIN−TO−SOURCE RESISTANCE (m<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Figure 3. On−Resistance vs. Gate−to−Source Resistance** **==> picture [239 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 25<br>VDS = 5 V<br>20<br>15<br>TJ = 125 ° C<br>10<br>TJ = 25 ° C<br>5<br>TJ = −55 ° C<br>0<br>1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>VGS, GATE−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> **Figure 2. Transfer Characteristics** **==> picture [236 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 23<br>22 T = 25 ° C VGS = 4.5 V<br>21<br>20<br>19<br>18<br>17<br>16<br>15<br>VGS = 10 V<br>14<br>13<br>0 5 10 15 20 25 30<br>ID, DRAIN CURRENT (A)<br>) �<br>, DRAIN−TO−SOURCE RESISTANCE (m<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Figure 4. On−Resistance vs. Drain Current and Gate Voltage** **==> picture [489 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 1.7 1E−05<br>1.61.5 IVDGS = 9 A = 10 V 1E−06 TJ = 150 ° C<br>1.4 TJ = 125 ° C<br>1.3 1E−07<br>1.2<br>1.1 1E−08<br>1.0<br>0.9 1E−09<br>0.8 TJ = 25 ° C<br>0.7 1E−10<br>0.6<br>0.5 1E−11<br>−50 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 30<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, LEAKAGE (A)<br>, DRAIN−TO−SOURCE<br>IDSS<br>DS(on)<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br> **Figure 5. On−Resistance Variation with Temperature** **Figure 6. Drain−to−Source Leakage Current vs. Voltage** **http://onsemi.com** **6** **NTLLD4901NF** ## **TYPICAL CHARACTERISTICS − Q1** **==> picture [241 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 800<br>TJ = 25 ° C<br>700 V GS = 0 V<br>Ciss<br>600<br>500<br>400<br>300<br>Coss<br>200<br>Crss<br>100<br>0<br>0 5 10 15 20 25 30<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **==> picture [239 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>QT<br>9<br>8<br>7<br>6<br>5<br>4<br>Qgs Qgd<br>3 ID = 9 A<br>2 TJ = 25 ° C<br>VGS = 4.5 V<br>1 VDD = 15 V<br>0<br>0 2 4 6 8 10 12<br>Qg, TOTAL GATE CHARGE (nC)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br> **Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** **Figure 7. Capacitance Variation** **==> picture [238 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 9<br>8 VGS = 0 VGS = 0 V = 0 V<br>7 T J = 25 ° C<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>VSD, SOURCE−TO−DRAIN VOLTAGE (V)SD, SOURCE−TO−DRAIN VOLTAGE (V), SOURCE−TO−DRAIN VOLTAGE (V)<br>, SOURCE CURRENT (A)<br>ISS<br>**----- End of picture text -----**<br> **==> picture [489 x 410] intentionally omitted <==** **----- Start of picture text -----**<br> 100 9<br>VGS = 10 V<br>VDD = 15 V 8 VGS = 0 VGS = 0 V = 0 V<br>ID = 10 A 7 T J = 25 ° C<br>6<br>tf<br>10 tr 5<br>4<br>td(on) 3<br>2<br>td(off) 1<br>1 0<br>1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)SD, SOURCE−TO−DRAIN VOLTAGE (V), SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current<br>vs. Gate Resistance<br>100 14<br>12<br>ID = 9 A<br>10 10 � s<br>10<br>100 � s<br>8<br>1 VGS = 20 V 1 ms<br>SINGLE PULSE 6<br>TC = 25 ° C 10 ms<br>4<br>0.1<br>RDS(on) LIMIT dc<br>2<br>THERMAL LIMIT<br>PACKAGE LIMIT<br>0.01 0<br>0.1 1 10 100 25 40 55 70 85 100 115 130 145 160<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE ( ° C)<br>Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy vs.<br>Safe Operating Area Starting Junction Temperature<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>ISS<br>, DRAIN CURRENT (A)<br>ID<br>, SINGLE PULSE DRAIN−TO−<br>AS<br>E<br>SOURCE AVALANCHE ENERGY (mJ)<br>**----- End of picture text -----**<br> **http://onsemi.com** **7** **NTLLD4901NF** ## **TYPICAL CHARACTERISTICS − Q1** **==> picture [491 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>D = 0.5<br>0.2<br>10 0.1<br>0.05<br>0.02<br>1 0.01<br>SINGLE PULSE<br>0.1<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, PULSE TIME (sec)<br>C/W)<br>°<br> (<br>JA(t)<br>�<br>THERMAL RESISTANCE, R<br>**----- End of picture text -----**<br> **Figure 13. Thermal Response** **http://onsemi.com** **8** **NTLLD4901NF** ## **TYPICAL CHARACTERISTICS − Q2** **==> picture [239 x 157] intentionally omitted <==** **----- Start of picture text -----**<br> 40<br>10 V 3.8 V 3.6 V<br>35<br>4.5 thru 4.0 V<br>30 7.5 V 3.4 V<br>25<br>3.2 V<br>20<br>3.0 V<br>15<br>10 VGS = 2.2 V 2.8 V<br>2.6 V<br>5<br>2.4 V<br>0<br>0 1 2 3 4 5<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> VDS, DRAIN−TO−SOURCE VOLTAGE (V) **Figure 14. On−Region Characteristics** **==> picture [244 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 60<br>ID = 10 A<br>50<br>40<br>30<br>20<br>10<br>0<br>2 3 4 5 6 7 8 9 10<br>VGS, GATE−TO−SOURCE VOLTAGE (V)<br>) �<br>, DRAIN−TO−SOURCE RESISTANCE (m<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Figure 16. On−Resistance vs. Gate−to−Source Resistance** **==> picture [238 x 158] intentionally omitted <==** **----- Start of picture text -----**<br> 40<br>35 VDS = 5 V<br>30<br>25<br>20<br>TJ = 25 ° C<br>15<br>10<br>TJ = 125 ° C<br>5<br>TJ = −55 ° C<br>0<br>1 1.5 2 2.5 3 3.5 4 4.5<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> VGS, GATE−TO−SOURCE VOLTAGE (V) **Figure 15. Transfer Characteristics** **==> picture [239 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>T = 25 ° C<br>18 VGS = 4.5 V<br>16<br>14<br>12<br>VGS = 10 V<br>10<br>8<br>0 5 10 15 20 25 30 35 40<br>ID, DRAIN CURRENT (A)<br>) �<br>, DRAIN−TO−SOURCE RESISTANCE (m<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Figure 17. On−Resistance vs. Drain Current and Gate Voltage** **==> picture [489 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 1.6 1E−02<br>ID = 11 A TJ = 150 ° C<br>VGS = 10 V<br>1.4 TJ = 125 ° C<br>1E−03<br>1.2<br>1E−04<br>1.0<br>TJ = 25 ° C<br>1E−05<br>0.8<br>VGS = 0 V<br>0.6 1E−06<br>−50 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 30<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, LEAKAGE (A)<br>, DRAIN−TO−SOURCE<br>IDSS<br>DS(on)<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br> **Figure 18. On−Resistance Variation with Temperature** **Figure 19. Drain−to−Source Leakage Current vs. Voltage** **http://onsemi.com** **9** **NTLLD4901NF** ## **TYPICAL CHARACTERISTICS − Q2** **==> picture [241 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 Ciss<br>Coss<br>100<br>10 Crss<br>TJ = 25 ° C<br>V GS = 0 V<br>1<br>0 5 10 15 20 25 30<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 20. Capacitance Variation** **==> picture [236 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>QT<br>9<br>8<br>7<br>6<br>5<br>4 Qgs Qgd<br>3 ID = 9 A<br>2 TJ = 25 ° C<br>VGS = 4.5 V<br>1 V DD = 15 V<br>0<br>0 2 4 6 8 10<br>Qg, TOTAL GATE CHARGE (nC)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br> **Figure 21. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** **==> picture [490 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 100 8<br>VGS = 10 V<br>VDD = 15 V 7 VGS = 0 V<br>ID = 10 A 6 T J = 25 ° C<br>5<br>td(off)<br>10 tr 4<br>3<br>td(on)<br>2<br>1<br>1 tf 0<br>1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br> **Figure 22. Resistive Switching Time Variation vs. Gate Resistance** **Figure 23. Diode Forward Voltage vs. Current** **==> picture [489 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> 100 14<br>12<br>10 10 � s ID = 9.5 A<br>10<br>100 � s<br>8<br>1 1 ms<br>0 V < VGS < 20 V<br>SINGLE PULSE 10 ms 6<br>TC = 25 ° C<br>4<br>0.1<br>RDS(on) LIMIT dc<br>2<br>THERMAL LIMIT<br>PACKAGE LIMIT<br>0.01 0<br>0.1 1 10 100 25 40 55 70 85 100 115 130 145 160<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE ( ° C)<br>Figure 24. Maximum Rated Forward Biased Figure 25. Maximum Avalanche Energy vs.<br>Safe Operating Area Starting Junction Temperature<br>, DRAIN CURRENT (A)<br>ID<br>, SINGLE PULSE DRAIN−TO−<br>AS<br>E<br>SOURCE AVALANCHE ENERGY (mJ)<br>**----- End of picture text -----**<br> **http://onsemi.com** **10** **NTLLD4901NF** ## **TYPICAL CHARACTERISTICS − Q2** **==> picture [492 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>D = 0.5<br>0.2<br>10 0.1<br>0.05<br>0.02<br>1 0.01<br>0.1<br>SINGLE PULSE<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, PULSE TIME (sec)<br>C/W)<br>°<br> (<br>JA(t)<br>�<br>THERMAL RESISTANCE, R<br>**----- End of picture text -----**<br> **Figure 26. Thermal Response** **http://onsemi.com** **11** **NTLLD4901NF** ## **PACKAGE DIMENSIONS** **WDFN8 3x3, 0.65P** CASE 511BP ISSUE A **==> picture [476 x 369] intentionally omitted <==** **----- Start of picture text -----**<br> D A B NOTES:<br>L L 1. DIMENSIONING AND TOLERANCING PER<br>ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>L1 3. DIMENSION b APPLIES TO PLATED<br>TERMINAL AND IS MEASURED BETWEEN<br>DETAIL A 0.05 AND 0.15 MM FROM TERMINAL TIP.<br>REFERENCEPIN ONE ÇÇÇ E CONSTRUCTIONSALTERNATE 4. COPLANARITY APPLIES TO THE EXPOSEDPAD AS WELL AS THE TERMINALS.<br>5. POSITIONAL TOLERANCE APPLIES TO ALL<br>ÇÇÇ OF THE EXPOSED PADS.<br>S 0.15 C ÇÇÇ et EXPOSED Cu i. MOLD CMPD A3 DIM MILLIMETERSMIN MAX<br>A 0.70 0.80<br>0.15 C ÇÇÇ ÇÇÇ ÉÉ A1 0.00 0.05<br>TOP VIEW A3 0.20 REF<br>ÇÇÇÉÉÉ ÉÉÇÇ b 0.30 0.50<br>DETAIL B A A1 D 3.00 BSC<br>a 0.10 cu C S 3 D2 2.35 2.55<br>ft A3 DETAIL B E 3.00 BSC<br>ALTERNATE E2 0.90 1.10<br>CONSTRUCTIONS E3 0.40 0.60<br>0.08 C A1 e 0.65 BSC<br>NOTE 4 SIDE VIEW C SEATINGPLANE G2G 0.43 BSC0.68 BSC<br>K 0.20 −−−<br>0.10 M C A B L 0.20 0.40<br>‘é ] Of} | | | L1 0.00 0.15<br>DETAIL A D2 NOTE 5<br>1 4 K E3 RECOMMENDED<br>G2 SOLDERING FOOTPRINT*<br>1. toot oo<br>2.60<br>5X 1.80<br>0.50<br>0.10 M C A B<br>G 0.43<br>NOTE 5<br>is 8 5 E2 1.15 i 0.68<br>8X b<br>e 0.10 M C A B 3.30<br>e/2 0.05 M C NOTE 3<br>BOTTOM VIEW<br>Eol n e ere 0.65 Ea ri<br>1<br>6X<br>0.65 n y noo 0.50<br>PITCH DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative **http://onsemi.com NTLLD4901NF/D 12**
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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