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NTLJD3119CTBG
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 4.6 A, 4.6 A, 0.037 ohm
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- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage V
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: WDFN
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2.3W
- Power Dissipation P Channel: 2.3W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 4.6A
- Continuous Drain Current Id P Channel: 4.6A
- Drain Source On State Resistance N Channel: 0.037ohm
- Drain Source On State Resistance P Channel: 0.037ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.232 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
NTLJD3119C ## Power MOSFET ## **20 V/−20 V, 4.6 A/−4.1 A, Complementary, 2x2 mm, WDFN Package** ## **Features** - Complementary N−Channel and P−Channel MOSFET - WDFN Package with Exposed Drain Pad for Excellent Thermal Conduction ## **www.onsemi.com** - Footprint Same as SC−88 Package **==> picture [191 x 104] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||| |---|---|---|---|---|---| |V(BR)DSS|RDS(on) MAX|ID MAX| |ee|65 m|@ 4.5 V|3.8 A| |N−Channel| |20 V|85 m|ep|@ 2.5 V|2.0 A| |||ee|120 m|@ 1.8 V|1.7 A|eeee| |re|100 m|@ −4.5 V|−4.1 A| |P−Channel| |−20 V|135 m|@ −2.5 V|−2.0 A| |200 m|@ −1.8 V|−1.6 A| |eoee| **----- End of picture text -----**<br> - Leading Edge Trench Technology for Low On Resistance - 1.8 V Gate Threshold Voltage - Low Profile (< 0.8 mm) for Easy Fit in Thin Environments - This is a Pb−Free Device ## **Applications** - Synchronous DC−DC Conversion Circuits - Load/Power Management of Portable Devices like PDA’s, Cellular Phones and Hard Drives - Color Display and Camera Flash Regulators ## **MARKING DIAGRAM** D2 D1 **DIAGRAM** 1 **WDFN6** JM M ee **CASE 506AN** JM = Specific Device Code M = Date Code = Pb−Free Package (Note: Microdot may be in either location) **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) **==> picture [463 x 331] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |Parameter|Symbol|Value|Unit|WDFN6| |Drain−to−Source Voltage|N−Ch|VDSS|20|V|CASE 506AN| |ee|Gate−to−Source Voltage|N−ChP−Ch|es Oe|VGS|±|−20|ee|8.0|V|Pin 1|ee|JM|= Specific Device Code| |ee|P−Ch|M|= Date Code| |N−Channel|Steady|TA = 25|ee|°|C|ee|ID|e|3.8|e|A|= Pb−Free Package| |Continuous Drain|State|TA = 85|°|C|2.8|(Note: Microdot may be in either location)| |=i|Current (Note 1)|t|≤|5 s|TA = 25|°|C|4.6| |P−Channel|ee|Steady|||TA = 25|°|C|ID|||−3.3|A|PIN CONNECTIONS| |Continuous Drain|State|TA = 85|°|C|−2.4| |oe|Current (Note 1)|t|≤|5 s|TA = 25|°|C|−4.1|D1| |Power Dissipation|Steady|PD|1.5|W|S1|1|6|D1| |(Note 1)|State|TA = 25|°|C| |t|≤|5 s|2.3|G1|2|5|G2| |N−Channel|||Steady|TA = 25|°|C|ID|||2.6|A|D2| |Continuous DrainCurrent (Note 2)|State|TA = 85|°|C|1.9|D2|3|4|S2| |P−Channel|Steady|TA = 25|°|C|ID|−2.3|A| |es|Continuous DrainCurrent (Note 2)|State|TA = 85|°|C|−1.6|(Top View)| |a|Power Dissipation(Note 2)|SteadyState|es|||TA = 25|ee|°|C|PD|||0.71|W|ORDERING INFORMATION|ee| |Pulsed Drain Current|ee|N−Ch|tp|eee|= 10 s|u|e|IDM|ee|18|A|Device|Packagegee|Shipppping| |P−Ch|−20| |ee| |Operating Junction and Storage Temperature|ee|T|ee|J, TSTG|−55 to|°|C|NTLJD3119CTAG|WDFN6| |150|(Pb−Free)| |ee| |ee|Lead Temperature for Soldering Purposes(1/8|″|from case for 10 s)|ee|TL|260|ee|°|C|NTLJD3119CTBG|(Pb−Free)WDFN6WDFN6| |ee|ee|ee| |Stresses exceeding those listed in the Maximum Ratings table may damage the| |device. If any of these limits are exceeded, device functionality should not be|†For information on tape and reel specifications,| |assumed, damage may occur and reliability may be affected.|including part orientation and tape sizes, please| **----- End of picture text -----**<br> **==> picture [183 x 60] intentionally omitted <==** **----- Start of picture text -----**<br> ||||| |---|---|---|---| |Device|Packagegee|Shipppping|[†]| |NTLJD3119CTAG|WDFN6|3000/Tape & Reel| |(Pb−Free)| |NTLJD3119CTBG|(Pb−Free)WDFN6WDFN6|3000/Tape & Reel| **----- End of picture text -----**<br> - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm[2] , 2 oz Cu. Publication Order Number: **NTLJD3119C/D** **1** © Semiconductor Components Industries, LLC, 2016 **August, 2016 − Rev. 5** **NTLJD3119C** ## **THERMAL RESISTANCE RATINGS** |**THERMAL RESISTANCE RATINGS**|||| |---|---|---|---| |**Parameter**|**Symbol**|**Max**|**Unit**| |**SINGLE OPERATION (SELF−HEATED)**|||| |Junction−to−Ambient – Steady State (Note 3)|R�JA|83|°C/W| |Junction−to−Ambient – Steady State Min Pad (Note 4)|R�JA|177|| |Junction−to−Ambient – t≤5 s (Note 3)|R�JA|54|| |**DUAL OPERATION (EQUALLY HEATED)**|||| |Junction−to−Ambient – Steady State (Note 3)|R�JA|58|°C/W| |Junction−to−Ambient – Steady State Min Pad (Note 4)|R�JA|133|| |Junction−to−Ambient – t≤5 s (Note 3)|R�JA|40|| 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm[2] , 2 oz Cu). **www.onsemi.com** **2** ## **NTLJD3119C** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTIC**|**S **(TJ= 25°C|unless|otherwise noted)|otherwise noted)||||| |---|---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**N/P**|**Test Conditions**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|N|VGS= 0 V|ID= 250�A|20|||V| |||P||ID= −250�A|−20|||| |Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ|N||||10.4||mV/°C| |||P||||9.95||| |Zero Gate Voltage Drain Current|IDSS|N|VGS= 0 V, VDS= 16 V|TJ= 25°C|||1.0|�A| |||P|VGS= 0 V, VDS= −16 V||||−1.0|| |||N|VGS= 0 V, VDS= 16 V|TJ= 85°C|||10|| |||P|VGS= 0 V, VDS= −16 V||||−10|| |Gate−to−Source Leakage Current|IGSS|N|VDS= 0 V, VGS=|±8.0 V|||±100|nA| |||P|VDS= 0 V, VGS=|±8.0 V|||±100|| |**ON CHARACTERISTICS**(Note 5)||||||||| |Gate Threshold Voltage|VGS(TH)|N|VGS= VDS|ID= 250�A|0.4|0.7|1.0|V| |||P||ID= −250�A|−0.4|−0.7|−1.0|| |Gate Threshold Temperature<br>Coefficient|VGS(TH)/TJ|N||||−3.0||mV/°C| |||P||||2.44||| |Drain−to−Source On Resistance|RDS(on)|N|VGS= 4.5 V , ID=|3.8 A||37|65|m�| |||P|VGS= −4.5 V , ID=|−4.1 A||75|100|| |||N|VGS= 2.5 V , ID=|2.0 A||46|85|| |||P|VGS= −2.5 V, ID=|−2.0 A||101|135|| |||N|VGS= 1.8 V , ID=|1.7 A||65|120|| |||P|VGS= −1.8 V, ID=|−1.6 A||150|200|| |Forward Transconductance|gFS|N|VDS= 10 V, ID=|1.7 A||4.2||S| |||P|VDS= −5.0 V , ID=|−2.0 A||3.1||| |**CHARGES, CAPACITANCES AND GATE RESISTANCE**||||||||| |Input Capacitance|CISS|N|f = 1.0 MHz, VGS= 0 V|VDS= 10 V||271||pF| |||P||VDS= −10 V||531||| |Output Capacitance|COSS|N||VDS= 10 V||72||| |||P||VDS= −10 V||91||| |Reverse Transfer Capacitance|CRSS|N||VDS= 10 V||43||| |||P||VDS= −10 V||56||| |Total Gate Charge|QG(TOT)|N|VGS= 4.5 V, VDS= 10|V, ID= 3.8 A||3.7||nC| |||P|VGS= −4.5 V, VDS= −10 V, ID= −2.0 A|||5.5||| |Threshold Gate Charge|QG(TH)|N|VGS= 4.5 V, VDS= 10 V, ID= 3.8 A|||0.3||| |||P|VGS= −4.5 V, VDS= −10 V, ID= −2.0 A|||0.7||| |Gate−to−Source Charge|QGS|N|VGS= 4.5 V, VDS= 10 V, ID= 3.8 A|||0.6||| |||P|VGS= −4.5 V, VDS= −10 V, ID= −2.0 A|||1.0||| |Gate−to−Drain Charge|QGD|N|VGS= 4.5 V, VDS= 10 V, ID= 3.8 A|||1.0||| |||P|VGS= −4.5 V, VDS= −10 V, ID= −2.0 A|||1.4||| **www.onsemi.com** **3** **NTLJD3119C** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTIC**|**S **(TJ= 25°C|unless|otherwise noted)|otherwise noted)||||| |---|---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**N/P**|**Test Conditions**||**Min**|**Typ**|**Max**|**Unit**| |**SWITCHING CHARACTERISTICS**(Note 6)||||||||| |Turn−On Delay Time|td(ON)|N|VGS= 4.5 V, VDD <br>ID= 1.0 A, RG=|= 16 V,<br>2.0�||3.8||ns| |Rise Time|tr|||||4.7||| |Turn−Off Delay Time|td(OFF)|||||11.1||| |Fall Time|tf|||||5.8||| |Turn−On Delay Time|td(ON)|P|VGS= −4.5 V, VDD <br>ID= −2.0 A, RG=|= −10 V,<br>2.0�||5.2||| |Rise Time|tr|||||13.2||| |Turn−Off Delay Time|td(OFF)|||||13.7||| |Fall Time|tf|||||19.1||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||| |Forward Diode Voltage|VSD|N|VGS= 0 V, TJ= 25°C|IS= 1.0 A||0.69|1.0|V| |||P||IS= −1.0 A||−0.75|−1.0|| |||N|VGS= 0 V, TJ= 125°C|IS= 1.0 A||0.52||| |||P||IS= −1.0 A||−0.64||| |Reverse Recovery Time|tRR|N|VGS= 0 V,<br>dIS/ dt = 100 A/�s|IS= 1.0 A||10.2||ns| |||P||IS= −1.0 A||16.2||| |Charge Time|ta|N||IS= 1.0 A||6.0||| |||P||IS= −1.0 A||10.6||| |Discharge Time|tb|N||IS= 1.0 A||4.2||| |||P||IS= −1.0 A||5.6||| |Reverse Recovery Charge|QRR|N||IS= 1.0 A||3.0||nC| |||P||IS= −1.0 A||5.7||| 5. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 6. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com** **4** **NTLJD3119C** ## **TYPICAL PERFORMANCE CURVES − N−CHANNEL** (TJ = 25 ° C unless otherwise noted) **==> picture [237 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>VGS = 4 V to 2.2 V<br>2.0 V<br>8<br>TJ = 25 ° C 1.8 V<br>6<br>1.6 V<br>4<br>2 1.4 V<br>1.2 V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (AMPS)<br>ID<br>**----- End of picture text -----**<br> **Figure 1. On−Region Characteristics** **==> picture [235 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>VDS ≥ 10 V<br>8<br>6<br>TJ = 25 ° C<br>4<br>2 T J = 100 ° C<br>TJ = −55 ° C<br>0<br>1 1.5 2 2.5<br>VGS, GATE−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (AMPS)<br>ID<br>**----- End of picture text -----**<br> **Figure 2. Transfer Characteristics** **==> picture [489 x 421] intentionally omitted <==** **----- Start of picture text -----**<br> 0.1 0.14<br>T J = 25 ° C TJ = 25 ° C<br>0.09 ID = 3.8 A 0.12<br>VGS = 1.8 V<br>0.08 0.1<br>0.07 0.08<br>0.06 0.06 VGS = 2.5 V<br>0.05 0.04<br>VGS = 4.5 V<br>0.04 0.02<br>0.03 0<br>1.0 2.0 3.0 4.0 5.0 6.0 1 2 3 4 5 6 7 8 9 10<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current<br>and Gate Voltage<br>1.5 10000<br>1.4 VIDGS = 3.8 A= 4.5 V VGS = 0 V TJ = 150 ° C<br>1.3<br>1.2<br>1.1 1000<br>1.0<br>0.9 TJ = 100 ° C<br>0.8<br>0.7 100<br>−50 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current<br>Temperature versus Voltage<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>(NORMALIZED) IDSS<br>, DRAIN−TO−SOURCE RESISTANCE<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **www.onsemi.com** **5** **NTLJD3119C** ## **TYPICAL PERFORMANCE CURVES − N−CHANNEL** (TJ = 25 ° C unless otherwise noted) **==> picture [492 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> 600 5 20<br>VDS = 0 V VGS = 0 V TJ = 25 ° C QT<br>500 Ciss<br>4 16<br>400<br>3 VDS VGS 12<br>300<br>2 QGS QGD 8<br>200 Crss<br>Coss<br>1 4<br>100<br>ID = 3.8 A<br>TJ = 25 ° C<br>0 0 0<br>10 5 0 5 10 15 20 0 1 2 3 4<br>VGS VDS QG, TOTAL GATE CHARGE (nC)<br>GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 8. Gate−To−Source and Drain−To−Source<br>C, CAPACITANCE (pF)<br>VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br> **Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge** **Figure 7. Capacitance Variation** **==> picture [238 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>VDD = 16 V<br>ID = 1.0 A<br>VGS = 4.5 V<br>td(off)<br>tf tr<br>10<br>td(on)<br>1<br>1 10 100<br>RG, GATE RESISTANCE ( � )<br>t, TIME (ns)<br>**----- End of picture text -----**<br> **Figure 9. Resistive Switching Time Variation versus Gate Resistance** **==> picture [236 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>VGS = 0 V<br>T J = 25 ° C<br>1.5<br>1<br>0.5<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9<br>VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>IS, SOURCE CURRENT (AMPS)<br>**----- End of picture text -----**<br> **Figure 10. Diode Forward Voltage versus Current** **www.onsemi.com** **6** **NTLJD3119C** ## **TYPICAL PERFORMANCE CURVES − P−CHANNEL** (TJ = 25 ° C unless otherwise noted) **==> picture [241 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>VGS = −1.9 V to −6 V TJ = 25 ° C<br>4.5<br>4 −1.8 V<br>3.5<br>−1.7 V<br>3<br>2.5 −1.6 V<br>2<br>−1.5 V<br>1.5<br>1 −1.4 V<br>0.5 −1.3 V<br>−1.2 V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (AMPS)<br>D<br>−I<br>**----- End of picture text -----**<br> **Figure 11. On−Region Characteristics** **==> picture [234 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>VDS ≥ 10 V<br>4<br>3<br>2<br>TJ = 25 ° C<br>1<br>T J = 125 ° C TJ = −55 ° C<br>0<br>0 0.5 1 1.5 2 2.5 3<br>−VGS, GATE−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (AMPS)<br>D<br>−I<br>**----- End of picture text -----**<br> **Figure 12. Transfer Characteristics** **==> picture [487 x 436] intentionally omitted <==** **----- Start of picture text -----**<br> 0.1 0.15<br>VGS = −4.5 V T J = 25 ° C<br>0.09 TJ = 100 ° C VGS = −2.5 V<br>0.08 0.1<br>TJ = 25 ° C VGS = −4.5 V<br>0.07<br>0.06 TJ = −55 ° C 0.05<br>0.05<br>0.04 0<br>1.0 1.5 2.0 2.5 1 2 3 4 5<br>−ID, DRAIN CURRENT (A) −ID, DRAIN CURRENT (A)<br>Figure 13. On−Resistance versus Drain Figure 14. On−Resistance versus Drain<br>Current Current and Gate Voltage<br>1.6 10000<br>ID = −2.2 A VGS = 0 V<br>VGS = −4.5 V<br>1.4 TJ = 150 ° C<br>1000<br>1.2<br>1.0 TJ = 100 ° C<br>100<br>0.8<br>0.6 10<br>−50 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20<br>TJ, JUNCTION TEMPERATURE ( ° C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 15. On−Resistance Variation with Figure 16. Drain−to−Source Leakage Current<br>Temperature versus Voltage<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>(NORMALIZED) DSS<br>−I<br>, DRAIN−TO−SOURCE RESISTANCE<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **www.onsemi.com** **7** **NTLJD3119C** ## **TYPICAL PERFORMANCE CURVES − P−CHANNEL** (TJ = 25 ° C unless otherwise noted) **==> picture [492 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 1200 5 20<br>VDS = 0 V VGS = 0 V TJ = 25 ° C QT<br>1000<br>Ciss 4 16<br>800<br>3 12<br>VDS VGS<br>600<br>QGS QGD<br>2 8<br>400 Crss<br>200 Coss 1 ID = −2.2 A 4<br>TJ = 25 ° C<br>0 0 0<br>5 0 5 10 15 20 0 1 2 3 4 5 6<br>VGS VDS QG, TOTAL GATE CHARGE (nC)<br>C, CAPACITANCE (pF)<br>-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br> **==> picture [223 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)<br>**----- End of picture text -----**<br> **Figure 17. Capacitance Variation** **Figure 18. Gate−To−Source and Drain−To−Source Voltage versus Total Charge** **==> picture [487 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 3<br>V DD = −15 V VGS = 0 V<br>I D = −2.2 A 2.5<br>VGS = −4.5 V<br>100 2<br>tf 1.5<br>tr<br>10 td(off) 1<br>td(on)<br>0.5<br>TJ = 150 ° C TJ = 25 ° C<br>1 0<br>1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>RG, GATE RESISTANCE ( � ) −VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>t, TIME (ns)<br>, SOURCE CURRENT (AMPS)<br>s<br>−I<br>**----- End of picture text -----**<br> **Figure 19. Resistive Switching Time Variation versus Gate Resistance** **Figure 20. Diode Forward Voltage versus Current** **==> picture [242 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br> TC = 25 ° C<br>TJ = 150 ° C<br>SINGLE PULSE 10 � s<br>10<br>100 � s<br>1 ms<br>1 10 ms<br>*See Note 2 on Page 1<br>0.1<br>RDS(on) LIMIT<br>THERMAL LIMIT dc<br>PACKAGE LIMIT<br>0.01<br>0.1 1 10 100<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (AMPS)<br>D<br>−I<br>**----- End of picture text -----**<br> **Figure 21. Maximum Rated Forward Biased Safe Operating Area** **www.onsemi.com** **8** **NTLJD3119C** ## **TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) **==> picture [473 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>D = 0.5<br>100<br>0.2<br>0.1 *See Note 2 on Page 1<br>10<br>0.05 P(pk)<br>D CURVES APPLY FOR POWER<br>0.02 PULSE TRAIN SHOWN<br>1 0.01 READ TIME AT t1<br>t1 TJ(pk) − TA = P(pk) R � JA(t)<br>t2<br>SINGLE PULSE DUTY CYCLE, D = t1/t2<br>0.1<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, TIME (s)<br>EFFECTIVE TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> **Figure 22. Thermal Response** **www.onsemi.com** **9** **NTLJD3119C** ## **PACKAGE DIMENSIONS** ## **WDFN6 2x2, 0.65P** CASE 506AN ISSUE G **==> picture [434 x 369] intentionally omitted <==** **----- Start of picture text -----**<br> NOTES:<br>D A EXPOSED Cu MOLD CMPD 1. DIMENSIONING AND TOLERANCING PER<br>ÇÇÇ ASME Y14.5M, 1994.<br>B 2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. DIMENSION b APPLIES TO PLATED<br>ÉÉÇÇ ÇÇÇÉÉÉ TERMINAL AND IS MEASURED BETWEEN<br>0.15 AND 0.30 mm FROM THE TERMINAL TIP.<br>PLATING 4. COPLANARITY APPLIES TO THE EXPOSED<br>DETAIL B PAD AS WELL AS THE TERMINALS.<br>PIN ONE 4 Se OPTIONAL SS MILLIMETERS<br>REFERENCE E CONSTRUCTIONS DIM MIN MAX<br>ÍÍÍ A 0.70 0.80<br>A1 0.00 0.05<br>0.10 C ÍÍÍ A3 0.20 REF<br>ret L L b 0.25 0.35<br>0.10 C ÍÍÍ D 2.00 BSC<br>TOP VIEW D2 0.57 0.77<br>L1 E 2.00 BSC<br>E2 0.90 1.10<br>DETAIL B A3 DETAIL A e 0.65 BSC<br>0.10 C OPTIONAL F 0.95 BSC<br>CONSTRUCTIONS K 0.25 REF<br>L 0.20 0.30<br>en 0.08 C A B L1 --- 0.10<br>NOTE 4<br>A1<br>c c ileba SIDE VIEW ly C SEATINGPLANE SOLDERMASK DEFINED<br>MOUNTING FOOTPRINT*<br>1.80<br>0.10 C A B 2X<br>0.82<br>D2 D2<br>L F<br>1 3 1.10<br>6X 0.45<br>DETAIL A E2 2.30<br>0.10 C A B<br>PACKAGE<br>OUTLINE<br>K 6 4 6X b @_ II Al<br>e 0.10 C A B 1 0.65<br>oe 0.05 C NOTE 3 6X 0.39 PITCH<br>BOTTOM VIEW DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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Updated at June 9, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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