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NTJD4158CT1G
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 250 mA, 250 mA, 1 ohm
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- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:250mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.2V; Power
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SC-88
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 270mW
- Power Dissipation P Channel: 270mW
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 250mA
- Continuous Drain Current Id P Channel: 250mA
- Drain Source On State Resistance N Channel: 1ohm
- Drain Source On State Resistance P Channel: 1ohm
| Delivery and price | |
|---|---|
| Units per pack | 9000 |
| Price | 0.069 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
NTJD4158C, NVJD4158C ## Small Signal MOSFET **30 V/−20 V, +0.25/−0.88 A, Complementary, SC−88** ## **Features** - Leading 20 V Trench for Low RDS(on) Performance **www.onsemi.com** - ESD Protected Gate - SC−88 Package for Small Footprint (2 x 2 mm) - NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ||~~ee~~|~~ee~~| |---|---|---| |**V(BR)DSS**<br>~~rs~~|**RDS(on) Typ**<br>~~rs~~<br>~~ee~~|**ID Max**<br>~~rs~~<br>~~ee~~| |N−Ch<br>30 V<br>~~Poe~~|1.0 @ 4.5 V<br>~~ee ~~<br>~~Poe~~|0.25 A<br> ~~ee~~<br>~~Poe~~| ||1.5 @ 2.5 V<br>~~Poe~~|| |P−Ch<br>−20 V|215 m @ −4.5 V|−0.88 A| ||345 m @ −2.5 V|| ## **Applications** - DC−DC Conversion - Load/Power Management **SC−88 (SOT−363) (6−Leads)** - Load Switch - Cell Phones, MP3s, Digital Cameras, PDAs **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) |**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|C unless otherwise noted)|C unless otherwise noted)|| |---|---|---|---|---|---| |**Parameter**<br>~~EE~~|||**Symbol**<br>~~EE~~|**Value**<br>~~EE~~|**Unit**<br>~~EE~~| |Drain−to−Source Voltage<br>~~EE~~<br>~~a~~||N−Ch<br>~~EE~~<br>~~a~~|VDSS<br>~~EE~~<br>~~a~~|30<br>~~EE~~<br>~~a~~|V<br>~~EE~~<br>~~a~~| |||P−Ch<br>~~a~~||−20<br>~~a~~|| |Gate−to−Source Voltage<br>~~a~~<br>~~Pe~~||N−Ch<br>~~a~~<br>~~Pe~~|VGS<br>~~a~~<br>~~Pe~~|±20<br>~~a~~<br>~~Pe~~|V<br>~~a~~<br>~~Pe~~| |||P−Ch<br>~~Pe~~||±12<br>~~Pe~~|| |**N−Channel**<br>Continuous Drain<br>Current (Note 1)<br>~~Pe~~|Steady<br>State<br>~~Pe~~|TA= 25°C<br>~~Pe~~|ID<br>~~Pe~~<br>~~TT~~|0.25<br>~~Pe~~|A<br>~~Pe~~<br>~~TT~~| |||TA= 85°C||0.18|| |**P−Channel**<br>Continuous Drain<br>Current (Note 1)<br>~~po~~|Steady<br>State|TA= 25°C||−0.88|| |||TA= 85°C<br>~~TT~~||−0.63<br>~~TT~~|| |Power Dissipation<br>(Note 1)<br>~~po~~|Steady<br>State|TA= 25°C<br>~~TT~~|PD<br>~~TT~~|0.27<br>~~TT~~|W<br>~~TT~~| |Pulsed Drain Cur-<br>rent<br>~~po~~<br>~~ee~~|N−Ch<br>~~ee~~|tp = 10 s<br>~~TT~~<br>~~ee~~|IDM<br>~~TT~~<br>~~ee~~|0.5<br>~~TT~~<br>~~ee~~|A<br>~~TT~~<br>~~ee~~| ||P−Ch<br>~~ee~~|||−3.0<br>~~TT~~<br>~~ee~~|| |Operating Junction and Storage Temperature|||TJ, Tstg|−55 to<br>150|°C| |Source Current (Body Diode)<br>~~a~~||N−Ch<br>~~a~~|IS<br>~~a~~<br>~~ee~~|0.25<br>~~a~~|A<br>~~a~~<br>~~ee~~| |||P−Ch<br>~~a~~||−0.48<br>~~a~~<br>~~ee~~|| |Lead Temperature for Soldering Purposes<br>(1/8″from case for 10 s)<br>~~ee~~|||TL<br>~~ee~~<br>~~ee~~|260<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~<br>~~ee~~| **==> picture [145 x 79] intentionally omitted <==** **----- Start of picture text -----**<br> S1 1 6 D1<br>G1 2 5 G2<br>D2 3 4 S2<br>**----- End of picture text -----**<br> **==> picture [38 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> (Top View)<br>**----- End of picture text -----**<br> **==> picture [183 x 146] intentionally omitted <==** **----- Start of picture text -----**<br> MARKING DIAGRAM &<br>PIN ASSIGNMENT<br>D1 G2 S2<br>6<br>1<br>XXX M<br>SC−88 (SOT−363)<br>CASE 419B<br>STYLE 26 1<br>S1 G1 D2<br>XXX = Specific Device Code<br>M = Date Code<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). Publication Order Number: **NTJD4158C/D** **1** © Semiconductor Components Industries, LLC, 2015 **Febuary, 2015 − Rev. 5** ## **NTJD4158C, NVJD4158C** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERIST**|**ICS**(TJ= 25|°C unl|ess otherwise noted)|ess otherwise noted)||||| |---|---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**N/P**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**(Note 3)||||||||| |Drain−to−Source<br>Breakdown Voltage|V(BR)DSS|N|VGS= 0 V|ID= 250�A|30|||V| |||P||ID= −250�A|−20|||| |Drain−to−Source Breakdown<br>Voltage Temperature Coefficient|V(BR)DSS/<br>TJ|N||||33||mV/<br>°C| |||P||||−9.0||| |Zero Gate Voltage Drain Current|IDSS|N|VGS= 0 V, VDS= 30 V|TJ= 25°C|||1.0|�A| |||P|VGS= 0 V, VDS= −16 V||||1.0|| |||N|VGS= 0 V, VDS= 30 V|TJ= 125°C||0.5||| |||P|VGS= 0 V, VDS= −16 V|||0.5||| |Gate−to−Source Leakage Current|IGSS|N|VDS= 0 V, VGS= 10 V||||1.0|�A| |||P|VDS = 0 V,VGS= −4.5 V||||1.0|| |**ON CHARACTERISTICS**(Note 2)||||||||| |Gate Threshold Voltage|VGS(TH)|N|VGS= VDS|ID= 100�A|0.8|1.2|1.5|V| |||P||ID= −250�A|−0.45|||| |Negative Gate Threshold<br>Temperature Coefficient|VGS(TH)/<br>TJ|N||||3.2||mV/<br>°C| |||P||||−2.7||| |Drain−to−Source On Resistance|RDS(on)|N|VGS= 4.5 V, ID= 10 mA|||1.0|1.5|�| |||P|VGS= −4.5 V, ID= −0.88 A|||0.215|0.260|| |||N|VGS= 2.5 V, ID= 10 mA|||1.5|2.5|| |||P|VGS= −2.5 V, ID= −0.71 A|||0.345|0.500|| |Forward Transconductance|gFS|N|VDS= 3.0 V, ID= 10 mA|||0.08||S| |||P|VDS = −10 V,ID = −0.88 A|||3.0||| |**CHARGES, CAPACITANCES AND GATE RESISTANCE**||||||||| |Input Capacitance|CISS|N|f = 1 MHz, VGS= 0 V|VDS= 5.0 V||20|33|pF| |||P||VDS= −20 V||155|225|| |Output Capacitance|COSS|N||VDS= 5.0 V||19|32|| |||P||VDS= −20 V||25|40|| |Reverse Transfer Capacitance|CRSS|N||VDS= 5.0 V||7.25|12|| |||P||VDS= −20 V||18|30|| |Total Gate Charge|QG(TOT)|N|VGS= 5.0 V, VDS= 24 V, ID= 0.1 A|||0.9|1.5|nC| |||P|VGS= −4.5 V, VDS= −10 V, ID= −0.88 A|||2.2|3.5|| |Threshold Gate Charge|QG(TH)|N|VGS= 5.0 V, VDS= 24 V, ID= 0.1 A|||0.2||| |||P|VGS= −4.5 V, VDS= −10 V, ID= −0.88 A|||0.2||| |Gate−to−Source Charge|QGS|N|VGS= 5.0 V, VDS= 24 V, ID= 0.1 A|||0.3||| |||P|VGS= −4.5 V, VDS= −10 V, ID= −0.88 A|||0.5||| |Gate−to−Drain Charge|QGD|N|VGS= 5.0 V, VDS= 24 V, ID= 0.1 A|||0.2||| |||P|VGS = −4.5 V,VDS = −10 V,ID = −0.88 A|||0.65||| |**SWITCHING CHARACTERISTICS**(Note 3)||||||||| |Turn−On Delay Time|td(ON)|N|VGS= 4.5 V, VDD= 5.0 V,<br>ID= 250 mA, RG= 50 �|||15||ns| |Rise Time|tr|||||66||| |Turn−Off Delay Time|td(OFF)|||||56||| |Fall Time|tf|||||78||| |Turn−On Delay Time|td(ON)|P|VGS= −4.5 V, VDD= −10 V,<br>ID= −0.5 A, RG= 20 �|||5.8||| |Rise Time|tr|||||6.5||| |Turn−Off Delay Time|td(OFF)|||||13.5||| |Fall Time|tf|||||3.5||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||| |Forward Diode Voltage|VSD|N|VGS= 0 V, TJ= 25°C|IS= 10 mA||0.65|0.7|V| |||P||IS= −0.48 A||−0.8|−1.2|| |||N|VGS= 0 V, TJ= 125°C|IS= 10 mA||0.45||| |||P||IS= −0.48 A||−0.66||| |Reverse Recovery Time|tRR|N|VGS= 0 V, dIS/dt= 8.0 A/�s|IS= 10 mA||12.4||ns| |||P|VGS = 0 V, dIS/dt = 100 A/�s|IS= −0.48 mA||10.6||| 2. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com** **2** **NTJD4158C, NVJD4158C** ## **TYPICAL N−CHANNEL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) **==> picture [491 x 605] intentionally omitted <==** **----- Start of picture text -----**<br> 0.2 0.2<br>0.18 VGS = 10 V to 2.8 V TJ = 25 ° C VDS = 5 V<br>VGS = 2.6 V<br>0.16 2.2 V<br>2.4 V 0.15<br>0.14<br>0.12<br>0.1 0.1<br>0.08 2 V TJ = 125 ° C 25 ° C<br>0.06<br>0.05<br>0.04 1.8 V<br>0.02 TJ = −55 ° C<br>0 0<br>0 0.25 0.5 0.75 1 1.25 1.5 1 1.25 1.5 1.75 2 2.25 2.5<br>VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>1.3 2.5<br>1.2 VGS = 4.5 V TJ = 125 ° C TJ = 25 ° C<br>1.1 2.0<br>1.0 VGS = 2.5 V<br>1.5<br>0.9<br>0.8 TJ = 25 ° C<br>1.0<br>0.7<br>0.6 TJ = −55 ° C 0.5 VGS = 4 V<br>0.5<br>0.4 0<br>0.005 0.055 0.105 0.155 0.205 0.005 0.055 0.105 0.155 0.205<br>ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)<br>Figure 3. On−Resistance vs. Drain Current and Figure 4. On−Resistance vs. Drain Current and<br>Temperature Gate Voltage<br>2 1000<br>ID = 0.01 A VGS = 0 V<br>1.75 VGS = 4.5 V<br>1.5<br>1.25 TJ = 150 ° C<br>1 100<br>0.75<br>0.5<br>TJ = 125 ° C<br>0.25<br>0 10<br>−50 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 30<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>DRAIN CURRENT (AMPS) DRAIN CURRENT (AMPS)<br>ID, ID,<br>) � ) �<br>DRAIN−TO−SOURCE RESISTANCE ( DRAIN−TO−SOURCE RESISTANCE (<br>DS(on), DS(on),<br>R R<br>, LEAKAGE (nA)<br>DRAIN−TO−SOURCE<br>IDSS<br>DS(on),<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br> **Figure 5. On−Resistance Variation with Temperature** **Figure 6. Drain−to−Source Leakage Current vs. Voltage** **www.onsemi.com** **3** **NTJD4158C, NVJD4158C** ## **TYPICAL N−CHANNEL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) **==> picture [236 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>VDS = 0 V VGS = 0 V TJ = 25 ° C<br>40 Ciss<br>30 Crss<br>20 Ciss<br>Coss<br>10<br>Crss<br>0<br>10 5 0 5 10 15 20 25<br>VGS VDS<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) **Figure 7. Capacitance Variation** **==> picture [227 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>QG<br>4<br>3<br>QGS QGD<br>2<br>1<br>ID = 0.1 A<br>TJ = 25 ° C<br>0<br>0 0.2 0.4 0.6 0.8 1<br>QG, TOTAL GATE CHARGE (nC)<br>GATE−TO−SOURCE VOLTAGE (VOLTS)<br>GS,<br>V<br>**----- End of picture text -----**<br> **Figure 8. Gate−to−Source Voltage vs. Total Gate Charge** **==> picture [238 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>VDD = 5.0 V<br>ID = 0.25 A<br>VGS = 4.5 V<br>100<br>tf<br>tr<br>td(off)<br>td(on)<br>10<br>1 10 100<br>RG, GATE RESISTANCE (OHMS)<br>t, TIME (ns)<br>**----- End of picture text -----**<br> **Figure 9. Resistive Switching Time Variation vs. Gate Resistance** **==> picture [244 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 0.1<br>VGS = 0 V<br>TJ = 25 ° C<br>0.08<br>0.06<br>0.04<br>0.02<br>0<br>0.5 0.55 0.6 0.65 0.7 0.75<br>VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)<br>, SOURCE CURRENT (AMPS)<br>IS<br>**----- End of picture text -----**<br> **Figure 10. Diode Forward Voltage vs. Current** **www.onsemi.com** **4** **NTJD4158C, NVJD4158C** ## **TYPICAL P−CHANNEL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) **==> picture [490 x 604] intentionally omitted <==** **----- Start of picture text -----**<br> 1 1<br>VGS = −4.5, −3.5 & −2.5 V TJ = 25 ° C VDS ≥ −20 V<br>0.9<br>−2 V −1.75 V 0.8<br>0.75<br>0.7<br>0.6<br>0.5 0.5<br>0.4<br>−1.5 V<br>0.3 125 ° C<br>0.25<br>0.2<br>−1.25 V 0.1 25 ° C<br>0 −1 V 0 TJ = −55 ° C<br>0 0.4 0.8 1.2 1.6 2 0 0.5 1 1.5 2 2.5 3 3.5<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>0.3 0.5<br>VGS = −4.5 V TJ = 25 ° C<br>TJ = 125 ° C 0.4<br>0.25<br>VGS = −2.5 V<br>0.3<br>0.2 TJ = 25 ° C VGS = −4.5 V<br>0.2<br>0.15<br>TJ = −55 ° C 0.1<br>0.1 0<br>0 0.25 0.5 0.75 1 0.4 0.5 0.6 0.7 0.8 0.9 1<br>−ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS)<br>Figure 3. On−Resistance vs. Drain Current and Figure 4. On−Resistance vs. Drain Current and<br>Temperature Gate Voltage<br>2.0 10000<br>ID = −0.88 A VGS = 0 V<br>1.8<br>VGS = −4.5 V<br>1.6 TJ = 150 ° C<br>1.4<br>1000<br>1.2<br>1.0 TJ = 125 ° C<br>0.8<br>100<br>0.6<br>0.4<br>0.2<br>0 10<br>−50 −25 0 25 50 75 100 125 150 0 5 10 15 20<br>TJ, JUNCTION TEMPERATURE ( ° C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>DRAIN CURRENT (AMPS) DRAIN CURRENT (AMPS)<br>D, D,<br>−I −I<br>) � ) �<br>DRAIN−TO−SOURCE RESISTANCE ( DRAIN−TO−SOURCE RESISTANCE (<br>DS(on), DS(on),<br>R R<br>DRAIN−TO−SOURCE LEAKAGE CURRENT (nA)<br>DS(on),<br>R RESISTANCE (NORMALIZED) DSS,<br>−I<br>**----- End of picture text -----**<br> **Figure 5. On−Resistance Variation with Temperature** **Figure 6. Drain−to−Source Leakage Current vs. Voltage** **www.onsemi.com** **5** **NTJD4158C, NVJD4158C** ## **TYPICAL P−CHANNEL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) **==> picture [485 x 406] intentionally omitted <==** **----- Start of picture text -----**<br> 350 5<br>Ciss VDS = 0 V VGS = 0 V TJ = 25 ° C QT<br>300<br>4<br>250<br>Crss<br>3<br>200<br>Q 1 Q2<br>150<br>2<br>100<br>1<br>50 Coss ID = −0.88 A<br>TJ = 25 ° C<br>0 0<br>10 5 0 5 10 15 20 0 0.4 0.8 1.2 1.6 2<br>VGS VDS Qg, TOTAL GATE CHARGE (nC)<br>GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>Figure 8. Gate−to−Source Voltage vs. Total<br>Figure 7. Capacitance Variation Gate Charge<br>100 0.5<br>VGS = 0 V<br>TJ = 25 ° C<br>0.4<br>0.3<br>td(off)<br>10 tr<br>td(on) 0.2<br>tf VIDDD = −0.8 A = −10 V 0.1<br>VGS = −4.5 V<br>1 0<br>1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7<br>RG, GATE RESISTANCE (OHMS) −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>GATE−TO−SOURCE VOLTAGE (VOLTS)<br>GS,<br>−V<br>t, TIME (ns)<br>, SOURCE CURRENT (AMPS)<br>S<br>−I<br>**----- End of picture text -----**<br> **Figure 9. Resistive Switching Time Variation vs. Gate Resistance** **Figure 10. Diode Forward Voltage vs. Current** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**|||| |---|---|---|---| |**Device**|**Marking**|**Package**|**Shipping**†| |NTJD4158CT1G|TCD|SC−88<br>(Pb−Free)|3000 / Tape & Reel| |NTJD4158CT2G|TCD||| |NVJD4158CT1G*|VCD||| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. **www.onsemi.com** **6** **NTJD4158C, NVJD4158C** ## **PACKAGE DIMENSIONS** ## **SC−88/SC70−6/SOT−363** CASE 419B−02 ISSUE Y **==> picture [479 x 405] intentionally omitted <==** **----- Start of picture text -----**<br> 2X<br>aaa H D<br>- D H NOTES:1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>A 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,<br>D GAGE PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-<br>PLANE SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.<br>4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF<br>6 5 4 THE PLASTIC BODY AND DATUM H.<br>L2 L 5. DATUMS A AND B ARE DETERMINED AT DATUM H.<br>E E1 DETAIL A 6. LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE<br>7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.<br>1 2 3<br>ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN<br>EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-<br>2X aaa C TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER<br>bbb H D 2X 3 TIPS RADIUS OF THE FOOT.<br>e MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>B [= 6X b : A −−− −−− 1.10 −−− −−− 0.043<br>ddd M C A-B D A1 0.00 −−− 0.10 0.000 −−− 0.004<br>TOP VIEW A2 0.70 0.90 1.00 0.027 0.035 0.039<br>b 0.15 0.20 0.25 0.006 0.008 0.010<br>C 0.08 0.15 0.22 0.003 0.006 0.009<br>A2 DETAIL A D 1.80 2.00 2.20 0.070 0.078 0.086<br>A E 2.00 2.10 2.20 0.078 0.082 0.086<br>E1 1.15 1.25 1.35 0.045 0.049 0.053<br>e 0.65 BSC 0.026 BSC<br>Se EEE L 0.26 0.36 0.46 0.010 0.014 0.018<br>L2 0.15 BSC 0.006 BSC<br>aaa 0.15 0.006<br>bbb 0.30 0.012<br>6X ccc C ccc 0.10 0.004<br>A1 C SEATINGPLANE c ddd 0.10 0.004<br>SIDE VIEW END VIEW STYLE 26:<br>PIN 1. SOURCE 1<br> 2. GATE 1<br>RECOMMENDED 3. DRAIN 2<br>SOLDERING FOOTPRINT* 4. 5. GATE 2SOURCE 2<br> 6. DRAIN 1<br>6X 6X<br>0.30 0.66<br>Ta os 2.50<br>0.65 goo<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ## **LITERATURE FULFILLMENT** : **www.onsemi.com** **NTJD4158C/D** **7**
Updated at June 9, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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