NTJD4105CT2G

NTJD4105C 

## MOSFET – Small Signal, Complementary, SC-88 20 V / -8.0 V, +0.63 A / -0.775 A 

## **Features** 

- Complementary N and P Channel Device 

- Leading −8.0 V Trench for Low RDS(on) Performance 

- ESD Protected Gate − ESD Rating: Class 1 

- SC−88 Package for Small Footprint (2 x 2 mm) 

- Pb−Free Packages are Available 

## **Applications** 

- DC−DC Conversion 

- Load/Power Switching 

- Single or Dual Cell Li−Ion Battery Supplied Devices 

**http://onsemi.com** 

|**V(BR)DSS**<br>~~ee~~|**RDS(on) TYP**<br>~~ee~~<br>~~ee~~|**ID Max**<br>~~ee~~<br>~~ee~~|
|---|---|---|
|N−Ch 20 V<br>~~ee~~|0.29  @ 4.5 V<br>0.36  @ 2.5 V<br>~~ee~~<br>~~ee~~|0.63 A<br>~~ee~~<br>~~ee~~|
|P−Ch −8.0 V|P−Ch −8.0 V<br>0.22  @ −4.5 V<br>0.32  @ −2.5 V<br>0.51  @ −1.8 V|−0.775 A|



- Cell Phones, MP3s, Digital Cameras, PDAs 

**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

**SOT−363 SC−88 (6−LEADS)** 

|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|C unless otherwise noted)|C unless otherwise noted)||
|---|---|---|---|---|---|
|**Parameter**<br>~~a~~|||**Symbol**<br>~~a~~|**Value**<br>~~a~~|**Unit**<br>~~a~~|
|Drain−to−Source Voltage<br>~~a~~<br>~~|~~||N−Ch<br>~~a~~<br>~~a~~<br>~~|~~|VDSS<br>~~a~~<br>~~a~~<br>~~|~~|20<br>~~a~~<br>~~a~~<br>~~|~~|V<br>~~a~~<br>~~a~~|
|||P−Ch<br>~~a~~<br>~~a~~<br>~~|~~||−8.0<br>~~a~~<br>~~a~~<br>~~|~~||
|Gate−to−Source Voltage<br>~~|~~<br>~~|~~||N−Ch<br>~~a~~<br>~~|~~|VGS<br>~~a~~<br>~~|~~<br>~~|~~|±12<br>~~a~~<br>~~|~~|V<br>~~a~~|
|||P−Ch<br>~~|~~||±8.0<br>~~|~~||
|Continuous Drain Current<br>− Steady State<br>(Based on R JA)|N−Ch<br>~~|~~<br>~~a~~<br>~~|~~<br>~~_~~|TA= 25°C<br>~~|~~<br>~~a~~<br>~~|~~|ID<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~PEE~~<br>~~|~~|0.63<br>~~|~~<br>~~|~~<br>~~|~~|A|
|||TA= 85°C<br>~~a~~<br>~~|~~<br>~~_~~||0.46<br>~~|~~<br>~~|~~<br>~~|~~||
||P−Ch<br>~~|~~<br>~~_~~<br>~~|~~|TA= 25°C<br>~~|~~<br>~~_~~<br>~~|~~||−0.775<br>~~|~~<br>~~|~~<br>~~|~~||
|||TA= 85°C<br>~~_~~<br>~~|~~||−0.558<br>~~|~~<br>~~|~~||
|Continuous Drain Current<br>− Steady State<br>(Based on R JL)|N−Ch<br>~~|~~<br>~~ee~~<br>~~|~~|TA= 25°C<br>~~|~~<br>~~ee~~<br>~~|~~||0.91<br>~~|~~<br>~~eee~~<br>~~|~~||
|||TA= 85°C<br>~~ee~~<br>~~|~~||0.65<br>~~eee~~<br>~~|~~||
||P−Ch<br>~~|~~<br>~~PEE~~<br>~~|~~|TA= 25°C<br>~~|~~<br>~~PEE~~<br>~~|~~||−1.1<br>~~|~~<br>~~PEE~~<br>~~|~~||
|||TA= 85°C<br>~~PEE~~<br>~~|~~<br>~~Oe~~||−0.8<br>~~PEE~~<br>~~|~~||
|Pulsed Drain Current<br>~~|~~<br>~~ee~~<br>~~|~~||tp≤10 s<br>~~|~~<br>~~ee~~<br>~~Oe~~<br>~~eee~~<br>~~|~~|IDM<br>~~|~~<br>~~ee~~|±1.2<br>~~|~~<br>~~ee~~<br>~~ee~~|A<br>~~ee~~|
|Power Dissipation − Steady State<br>(Based on R JA)<br>~~ee~~<br>~~|~~<br>~~Pe~~||TA= 25°C<br>~~Oe~~<br>~~ee~~<br>~~eee~~<br>~~|~~<br>~~Pe~~|PD<br>~~|~~<br> ~~ee~~|0.27<br>~~ee~~<br>~~|~~|W|
|||TA= 85°C<br>~~ee~~<br>~~eee~~<br>~~|~~<br>~~Pe~~||0.14<br>~~ee~~<br>~~|~~||
|Power Dissipation − Steady State<br>(Based on R JL)<br>~~|~~<br>~~Pe~~||TA= 25°C<br>~~eee~~<br>~~|~~<br>~~Pe~~<br>~~es~~||0.55<br>~~ee~~<br>~~|~~||
|||TA= 85°C<br>~~Pe~~<br>~~es~~||0.29<br>~~|~~||
|Operating Junction and Storage Temperature<br>|||TJ,<br>TSTG<br> ~~ee~~|−55 to<br>150|°C|
|Source Current (Body Diode)<br>~~SE~~<br>~~|~~||N−Ch<br>~~SE~~|IS<br>~~SE~~<br>~~|~~|0.63<br>~~SE~~|A|
|||P−Ch<br>~~SE~~<br>~~|~~||−0.775<br>~~SE~~<br>~~|~~||
|Lead Temperature for Soldering Purposes<br>(1/8” from case for 10 s)<br>~~|~~|||TL<br>~~|~~|260<br>~~|~~|°C|



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S1 1 6 D1<br>G1 2 5 G2<br>D2 3 4 S2<br>Top View<br>MARKING DIAGRAM &<br>PIN ASSIGNMENT<br>D1 G2 S2<br>6<br>©Pp 1 Doo<br>TC M<br>SC−88/SOT−363<br>CASE 419B<br>STYLE 28<br>1<br>S1 pee G1 D2<br>TC  = Device Code<br>M  = Date Code<br> = Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. 

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq. 

Publication Order Number: **NTJD4105C/D** 

**1** 

© Semiconductor Components Industries, LLC, 2006 **May, 2019 − Rev. 2** 

## **NTJD4105C** 

**ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERI**|**STICS**(TJ|= 25°C|unless otherwise noted)|unless otherwise noted)|||||
|---|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**N/P**|**Test Condition**||**Min**|**Typ**|**Max**|**Units**|
|**OFF CHARACTERISTICS**|||||||||
|Drain−to−Source<br>Breakdown Voltage|V(BR)DSS|N|VGS= 0 V|ID= 250�A|20|27||V|
|||P||ID= −250�A|−8.0|−10.5|||
|Drain−to−Source Breakdown<br>Voltage Temperature Coeffi-<br>cient|V(BR)DSS<br>/ TJ|N||||22||mV/°C|
|||P||||−6.0|||
|Zero Gate Voltage Drain Cur-<br>rent|IDSS|N|VGS= 0 V, VDS= 16 V|TJ= 25°C|||1.0|�A|
|||P|VGS= 0 V, VDS= −6.4 V||||1.0||
|Gate−to−Source<br>Leakage Current|IGSS|N|VDS= 0 V|VGS=±12 V|||10|�A|
|||P||VGS=±8.0|||10||
|**ON CHARACTERISTICS**(Note 2)|||||||||
|Gate Threshold Voltage|VGS(TH)|N|VGS= VDS|ID= 250�A|0.6|0.92|1.5|V|
|||P||ID= −250�A|−0.45|−0.83|−1.0||
|Gate Threshold<br>Temperature Coefficient|VGS(TH)/<br>TJ|N||||−2.1||−mV/°C|
|||P||||2.2|||
|Drain−to−Source On Resist-<br>ance|RDS(on)|N|VGS= 4.5 V ID= 0.63 A|||0.29|0.375|�|
|||P|VGS= −4.5 V, ID= −0.57 A|||0.22|0.30||
|||N|VGS= 2.5 V, ID= 0.40 A|||0.36|0.445||
|||P|VGS= −2.5 V, ID= −0.48 A|||0.32|0.46||
|||P|VGS= −1.8 V, ID= −0.20 A|||0.51|0.90||
|Forward Transconductance|gFS|N|VDS= 4.0 V ID= 0.63 A|||2.0||S|
|||P|VDS= −4.0 V,ID= −0.57 A|||2.0|||
|**CHARGES AND CAPACITANCES**|||||||||
|Input Capacitance|CISS|N|f = 1 MHz, VGS= 0 V|VDS= 20 V||33|46|pF|
|||P||VDS= −8.0V||160|225||
|Output Capacitance|COSS|N||VDS= 20 V||13|22||
|||P||VDS= −8.0 V||38|55||
|Reverse Transfer Capacitance|CRSS|N||VDS= 20 V||2.8|5.0||
|||P||VDS= −8.0 V||28|40||
|Total Gate Charge|QG(TOT)|N|VGS= 4.5 V, VDS= 10 V, ID= 0.7 A|||1.3|3.0|nC|
|||P|VGS= −4.5 V, VDS= −5.0 V, ID= −0.6 A|||2.2|4.0||
|Threshold Gate Charge|QG(TH)|N|VGS= 4.5 V, VDS= 10 V, ID= 0.7 A|||0.1|||
|||P|VGS= −4.5 V, VDS= −5.0 V, ID= −0.6 A|||0.1|||
|Gate−to−Source Charge|QGS|N|VGS= 4.5 V, VDS= 10 V, ID= 0.7 A|||0.2|||
|||P|VGS= −4.5 V, VDS= −5.0 V, ID= −0.6 A|||0.5|||
|Gate−to−Drain Charge|QGD|N|VGS= 4.5 V, VDS= 10 V, ID= 0.7 A|||0.4|||
|||P|VGS= −4.5 V,VDS= −5.0|V,ID= −0.6 A||0.5|||
|**SWITCHING CHARACTERISTICS**(Note 3)|||||||||
|Turn−On Delay Time|td(ON)|N|VGS= 4.5 V, VDD=<br>ID= 0.5 A, RG=|10 V,<br>20 �||0.083||�s|
|Rise Time|tr|||||0.227|||
|Turn−Off Delay Time|td(OFF)|||||0.786|||
|Fall Time|tf|||||0.506|||
|Turn−On Delay Time|td(ON)|P|VGS= −4.5 V, VDD=<br>ID= −0.5 A, RG=|−4.0 V,<br>8.0 �||0.013|||
|Rise Time|tr|||||0.023|||
|Turn−Off Delay Time|td(OFF)|||||0.050|||
|Fall Time|tf|||||0.036|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||||
|Forward Diode Voltage|VSD|N|VGS= 0 V, TJ= 25°C|IS= 0.23 A||0.76|1.1|V|
|||P||IS= −0.23 A||0.76|1.1||
|||N|VGS= 0 V, TJ= 125°C|IS= 0.23 A||0.63|||
|||P||IS= −0.23 A||0.63|||
|Reverse Recovery Time|tRR|N|VGS= 0 V,<br>dIS/dt= 90 A/�s|IS= 0.23 A||0.410||�s|
|||P||IS= −0.23 A||0.078|||



2. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2%. 

3. Switching characteristics are independent of operating junction temperatures. 

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**2** 

**NTJD4105C** 

## **TYPICAL N−CHANNEL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) 

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**----- Start of picture text -----**<br>
1.4 1.2<br>V GS  = 4.5 V to 2.2 V TJ = 25 ° C VDS ≥  10 V<br>1.2 V GS  = 2 V 1<br>1.8 V<br>1<br>0.8<br>0.8<br>0.6<br>1.6 V<br>0.6<br>0.4<br>0.4 TJ = 125 ° C<br>1.4 V<br>0.2 0.2 25 ° C<br>1.2 V T J  = −55 ° C<br>0 0<br>0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2 2.4<br>VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>0.7 0.7<br>VGS = 4.5 V VGS = 2.5 V<br>0.6 0.6 TJ = 125 ° C<br>0.5 0.5<br>TJ = 125 ° C<br>0.4 0.4 TJ = 25 ° C<br>0.3 TJ = 25 ° C 0.3 TJ = −55 ° C<br>TJ = −55 ° C<br>0.2 0.2<br>0.1 0.1<br>0 0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)<br>DRAIN CURRENT (AMPS) DRAIN CURRENT (AMPS)<br>ID,  ID,<br>) � ) �<br>DRAIN−TO−SOURCE RESISTANCE ( DRAIN−TO−SOURCE RESISTANCE (<br>DS(on),  DS(on),<br>R R<br>**----- End of picture text -----**<br>


**Figure 3. On−Resistance vs. Drain Current and Temperature** 

**Figure 4. On−Resistance vs. Drain Current and Temperature** 

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**----- Start of picture text -----**<br>
2 80<br>ID = 0.63 A TJ = 25 ° C<br>1.8 VGS = 4.5 V VGS = 0 V<br>and 2.5 V<br>60<br>1.6<br>1.4<br>40 Ciss<br>1.2<br>1<br>20 C oss<br>0.8 C rss<br>0.6 0<br>−50 −25 0 25 50 75 100 125 150 0 5 10 15 20<br>TJ, JUNCTION TEMPERATURE ( ° C) DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>DRAIN−TO−SOURCE<br>C, CAPACITANCE (pF)<br>DS(on),<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

**Figure 6. Capacitance Variation** 

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**3** 

**NTJD4105C** 

**TYPICAL N−CHANNEL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) 

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5<br>QG(T OT)<br>4<br>VGS<br>3<br>2 Q GS Q GD<br>1<br>ID = 0.63 A<br>TJ = 25 ° C<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>Qg, TOTAL GATE CHARGE (nC)<br>GATE−TO−SOURCE VOLTAGE (VOLTS)<br>GS,<br>V<br>**----- End of picture text -----**<br>


**Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** 

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**----- Start of picture text -----**<br>
0.7<br>VGS = 0 V<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1 TJ = 150 ° C<br>TJ = 25 ° C<br>0<br>0 0.2 0.4 0.6 0.8 1<br>VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)<br>, SOURCE CURRENT (AMPS)<br>IS<br>**----- End of picture text -----**<br>


**Figure 8. Diode Forward Voltage vs. Current** 

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**4** 

**NTJD4105C** 

## **TYPICAL P−CHANNEL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) 

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**----- Start of picture text -----**<br>
1.4<br>V GS  = −4.5 V to −2.6 V= TJ = 25J = 25 = 25 ° C<br>1.2 VV GSGS = −2.2 V−4.5 V to −2.6 V2.2 V4.5 V to −2.6 V−2.6 V2.6 V<br>−2 V2 V −1.8 V<br>1<br>0.8<br>−1.6 V<br>0.6<br>0.4<br>−1.4 V<br>0.2<br>−1.2 V1.2 V<br>0<br>0 2 4 6 8<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS), DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>Figure 9. On−Region Characteristics<br>0.5<br>VGS = −4.5 VGS = −4.5 V = −4.5 V<br>0.4<br>0.3 TJ = 125J = 125 = 125 ° C<br>TJ = 25J = 25 = 25 ° C<br>0.2<br>TJ = −55J = −55 = −55 ° C<br>0.1<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>−ID, DRAIN CURRENT (AMPS)D, DRAIN CURRENT (AMPS) DRAIN CURRENT (AMPS)<br>DRAIN CURRENT (AMPS)<br>D,<br>−I<br>) �<br>DRAIN−TO−SOURCE RESISTANCE (<br>DS(on),<br>R<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1.4 1.4<br>1.2 VV GSGS  = −4.5 V to −2.6 V= −2.2 V−4.5 V to −2.6 V2.2 V4.5 V to −2.6 V−2.6 V2.6 V TJ = 25J = 25 = 25 ° C 1.2 V DS ≥  −10 V<br>−2 V2 V −1.8 V<br>1 1<br>0.8 0.8<br>−1.6 V<br>0.6 0.6<br>0.4 0.4 TJ = 125 ° C<br>−1.4 V<br>0.2 0.2 25 ° C<br>−1.2 V1.2 V TJ = −55 ° C<br>0 0<br>0 2 4 6 8 0 0.4 0.8 1.2 1.6 2 2.4<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS), DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)<br>Figure 9. On−Region Characteristics Figure 10. Transfer Characteristics<br>0.5 0.5<br>VGS = −4.5 VGS = −4.5 V = −4.5 V VGS = −2.5 V<br>0.4 0.4 TJ = 125 ° C<br>TJ = 25 ° C<br>0.3 TJ = 125J = 125 = 125 ° C 0.3<br>TJ = 25J = 25 = 25 ° C TJ = −55 ° C<br>0.2 0.2<br>TJ = −55J = −55 = −55 ° C<br>0.1 0.1<br>0 0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>−ID, DRAIN CURRENT (AMPS)D, DRAIN CURRENT (AMPS) DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS)<br>Figure 11. On−Resistance vs. Drain Current Figure 12. On−Resistance vs. Drain Current<br>and Temperature and Temperature<br>1.6 300<br>ID = −0.7 A TJ = 25 ° C<br>VGS = −4.5 V V GS  = 0 V<br>1.4 and −2.5 V 240<br>Ciss<br>1.2 180<br>1 120<br>C oss<br>0.8 60<br>Crss<br>0.6 0<br>−50 −25 0 25 50 75 100 125 150 −8 −6 −4 −2 0<br>TJ, JUNCTION TEMPERATURE ( ° C) GATE−TO−SOURCE OR DRAIN−TO−SOURCE<br>VOLTAGE (VOLTS)<br>Figure 13. On−Resistance Variation with Figure 14. Capacitance Variation<br>DRAIN CURRENT (AMPS) DRAIN CURRENT (AMPS)<br>D,  D,<br>−I −I<br>) � ) �<br>DRAIN−TO−SOURCE RESISTANCE ( DRAIN−TO−SOURCE RESISTANCE (<br>DS(on),  DS(on),<br>R R<br>DRAIN−TO−SOURCE<br>C, CAPACITANCE (pF)<br>DS(on),<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


**Figure 13. On−Resistance Variation with Temperature** 

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**5** 

**NTJD4105C** 

**TYPICAL P−CHANNEL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) 

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**----- Start of picture text -----**<br>
5<br>Q G(TOT)<br>4<br>VGS<br>3<br>2 Q GS QGD<br>1<br>ID = −0.6 A<br>TJ = 25 ° C<br>0<br>0 0.4 0.8 1.2 1.6 2 2.4<br>Qg, TOTAL GATE CHARGE (nC)<br>GATE−TO−SOURCE VOLTAGE (VOLTS)<br>GS,<br>−V<br>**----- End of picture text -----**<br>


**Figure 15. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** 

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**----- Start of picture text -----**<br>
0.7<br>VGS = 0 V<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1 TJ = 150 ° C<br>TJ = 25 ° C<br>0<br>0 0.2 0.4 0.6 0.8 1<br>−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)<br>, SOURCE CURRENT (AMPS)<br>S<br>−I<br>**----- End of picture text -----**<br>


**Figure 16. Diode Forward Voltage vs. Current** 

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**6** 

**NTJD4105C** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**†|
|NTJD4105CT1|SOT−363|3000 / Tape & Reel|
|NTJD4105CT1G|SOT−363<br>(Pb−Free)|3000 / Tape & Reel|
|NTJD4105CT2|SOT−363|3000 / Tape & Reel|
|NTJD4105CT2G|SOT−363<br>(Pb−Free)|3000 / Tape & Reel|
|NTJD4105CT4|SOT−363|10,000 / Tape & Reel|
|NTJD4105CT4G|SOT−363<br>(Pb−Free)|10,000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**7** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SC−88/SC70−6/SOT−363** CASE 419B−02 ISSUE Y 

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1<br>SCALE 2:1 2X DATE 11 DEC 2012<br>aaa H D<br>- D H NOTES:1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>A 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,<br>D GAGE PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-<br>PLANE SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.<br>4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF<br>6 5 4 THE PLASTIC BODY AND DATUM H.<br>L2 L 5. DATUMS A AND B ARE DETERMINED AT DATUM H.<br>E E1 DETAIL A 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THELEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.<br>7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.<br>1 2 3<br>ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN<br>EXCESS OF DIMENSION b AT MAXIMUM  MATERIAL CONDI-<br>2X aaa C TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER<br>bbb H D 2X 3 TIPS RADIUS OF THE FOOT.<br>e MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>B l= 6X b : A −−− −−− 1.10 −−− −−− 0.043<br>ddd M C A-B D A1 0.00 −−− 0.10 0.000 −−− 0.004<br>TOP VIEW A2 0.70 0.90 1.00 0.027 0.035 0.039<br>b 0.15 0.20 0.25 0.006 0.008 0.010<br>C 0.08 0.15 0.22 0.003 0.006 0.009<br>A2 DETAIL A D 1.80 2.00 2.20 0.070 0.078 0.086<br>A E 2.00 2.10 2.20 0.078 0.082 0.086<br>E1 1.15 1.25 1.35 0.045 0.049 0.053<br>e 0.65 BSC 0.026 BSC<br>L 0.26 0.36 0.46 0.010 0.014 0.018<br>L2 0.15 BSC 0.006 BSC<br>aaa 0.15 0.006<br>bbb 0.30 0.012<br>6X ccc C ccc 0.10 0.004<br>(tll, A1 C  A SEATINGPLANE Ma c === ddd 0.10 0.004<br>SIDE VIEW END VIEW GENERIC<br>MARKING DIAGRAM*<br>RECOMMENDED 6<br>SOLDERING FOOTPRINT*<br>6X 6X XXXM<br>0.30 0.66<br>1<br>Ta os 2.50 XXX = Specific Device Code<br>M = Date Code*<br>= Pb−Free Package<br>0.65 yo (Note: Microdot may be in either location)<br>PITCH<br>**----- End of picture text -----**<br>


## DATE 11 DEC 2012 

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 

   - *Date Code orientation and/or position may vary depending upon manufacturing location. 

**==> picture [83 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. 

## **STYLES ON PAGE 2** 

**DOCUMENT NUMBER: 98ASB42985B** 

**DESCRIPTION: SC−88/SC70−6/SOT−363** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 2** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

## **SC−88/SC70−6/SOT−363** CASE 419B−02 ISSUE Y 

## DATE 11 DEC 2012 

|STYLE 1:|STYLE 2:|STYLE 3:|STYLE 4:|STYLE 5:|STYLE 6:|
|---|---|---|---|---|---|
|PIN 1. EMITTER 2|CANCELLED|CANCELLED|PIN 1. CATHODE|PIN 1. ANODE|PIN 1. ANODE 2|
|2. BASE 2|||2. CATHODE|2. ANODE|2. N/C|
|3. COLLECTOR 1|||3. COLLECTOR|3. COLLECTOR|3. CATHODE 1|
|4. EMITTER 1|||4. EMITTER|4. EMITTER|4. ANODE 1|
|5. BASE 1|||5. BASE|5. BASE|5. N/C|
|6. COLLECTOR 2|||6. ANODE|6. CATHODE|6. CATHODE 2|
|STYLE 7:|STYLE 8:|STYLE 9:|STYLE 10:|STYLE 11:|STYLE 12:|
|PIN 1. SOURCE 2|CANCELLED|PIN 1. EMITTER 2|PIN 1. SOURCE 2|PIN 1. CATHODE 2|PIN 1. ANODE 2|
|2. DRAIN 2||2. EMITTER 1|2. SOURCE 1|2. CATHODE 2|2. ANODE 2|
|3. GATE 1||3. COLLECTOR 1|3. GATE 1|3. ANODE 1|3. CATHODE 1|
|4. SOURCE 1||4. BASE 1|4. DRAIN 1|4. CATHODE 1|4. ANODE 1|
|5. DRAIN 1||5. BASE 2|5. DRAIN 2|5. CATHODE 1|5. ANODE 1|
|6. GATE 2||6. COLLECTOR 2|6. GATE 2|6. ANODE 2|6. CATHODE 2|
|STYLE 13:|STYLE 14:|STYLE 15:|STYLE 16:|STYLE 17:|STYLE 18:|
|PIN 1. ANODE|PIN 1. VREF|PIN 1. ANODE 1|PIN 1. BASE 1|PIN 1. BASE 1|PIN 1. VIN1|
|2. N/C|2. GND|2. ANODE 2|2. EMITTER 2|2. EMITTER 1|2. VCC|
|3. COLLECTOR|3. GND|3. ANODE 3|3. COLLECTOR 2|3. COLLECTOR 2|3. VOUT2|
|4. EMITTER|4. IOUT|4. CATHODE 3|4. BASE 2|4. BASE 2|4. VIN2|
|5. BASE|5. VEN|5. CATHODE 2|5. EMITTER 1|5. EMITTER 2|5. GND|
|6. CATHODE|6. VCC|6. CATHODE 1|6. COLLECTOR 1|6. COLLECTOR 1|6. VOUT1|
|STYLE 19:|STYLE 20:|STYLE 21:|STYLE 22:|STYLE 23:|STYLE 24:|
|PIN 1. I OUT|PIN 1. COLLECTOR|PIN 1. ANODE 1|PIN 1. D1 (i)|PIN 1. Vn|PIN 1. CATHODE|
|2. GND|2. COLLECTOR|2. N/C|2. GND|2. CH1|2. ANODE|
|3. GND|3. BASE|3. ANODE 2|3. D2 (i)|3. Vp|3. CATHODE|
|4. V CC|4. EMITTER|4. CATHODE 2|4. D2 (c)|4. N/C|4. CATHODE|
|5. V EN|5. COLLECTOR|5. N/C|5. VBUS|5. CH2|5. CATHODE|
|6. V REF|6. COLLECTOR|6. CATHODE 1|6. D1 (c)|6. N/C|6. CATHODE|
|STYLE 25:|STYLE 26:|STYLE 27:|STYLE 28:|STYLE 29:|STYLE 30:|
|PIN 1. BASE 1|PIN 1. SOURCE 1|PIN 1. BASE 2|PIN 1. DRAIN|PIN 1. ANODE|PIN 1. SOURCE 1|
|2. CATHODE|2. GATE 1|2. BASE 1|2. DRAIN|2. ANODE|2. DRAIN 2|
|3. COLLECTOR 2|3. DRAIN 2|3. COLLECTOR 1|3. GATE|3. COLLECTOR|3. DRAIN 2|
|4. BASE 2|4. SOURCE 2|4. EMITTER 1|4. SOURCE|4. EMITTER|4. SOURCE 2|
|5. EMITTER|5. GATE 2|5. EMITTER 2|5. DRAIN|5. BASE/ANODE|5. GATE 1|
|6. COLLECTOR 1|6. DRAIN 1|6. COLLECTOR 2|6. DRAIN|6. CATHODE|6. DRAIN 1|



Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. 

|**DOCUMENT NUMBER:**|**98ASB42985B**|Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.|Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.|
|---|---|---|---|
|**DESCRIPTION:**|**SC−88/SC70−6/SOT−363**||**PAGE 2 OF 2**|



ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2019 

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