Image not available
Illustrative purposes only
NTJD4105CT1G
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 630 mA, 630 mA, 0.29 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:630mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.29ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Volta
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOT-363
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 270mW
- Power Dissipation P Channel: 270mW
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 630mA
- Continuous Drain Current Id P Channel: 630mA
- Drain Source On State Resistance N Channel: 0.29ohm
- Drain Source On State Resistance P Channel: 0.29ohm
| Delivery and price | |
|---|---|
| Units per pack | 9000 |
| Price | 0.062 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## NTJD4105C ## Small Signal MOSFET **20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−88** ## **Features** - Complementary N and P Channel Device - Leading −8.0 V Trench for Low RDS(on) Performance **http://onsemi.com** - ESD Protected Gate − ESD Rating: Class 1 - SC−88 Package for Small Footprint (2 x 2 mm) - Pb−Free Packages are Available ## **Applications** - DC−DC Conversion - Load/Power Switching - Single or Dual Cell Li−Ion Battery Supplied Devices - Cell Phones, MP3s, Digital Cameras, PDAs |p|~~ee~~<br>|| |---|---|---| |**V(BR)DSS**<br>~~ee~~<br>p|**RDS(on) TYP**<br>~~ee~~<br>~~ee~~<br>|**ID Max**<br>~~ee~~<br>| |N−Ch 20 V<br>p|0.29 @ 4.5 V<br>0.36 @ 2.5 V<br>~~ee~~<br> ~~FE~~|0.63 A<br>~~FE~~S| |P−Ch −8.0 V<br>p|P−Ch −8.0 V<br>0.22 @ −4.5 V<br>0.32 @ −2.5 V<br>0.51 @ −1.8 V<br>~~ee~~<br>|−0.775 A<br>| ## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) **Parameter Symbol Value Unit** ~~esGs es~~ **SOT−363** Drain−to−Source Voltage N−Ch VDSS 20 V **SC−88 (6−LEADS)** P−Ch −8.0 ~~a| |~~ Gate−to−Source Voltage N−Ch VGS ± 12 V S1 1 6 D1 P−Ch ± 8.0 ~~eS| ee~~ ~~**|**~~ Continuous Drain Current N−Ch TA = 25 ° C ID 0.63 A − Steady State (Based on R JA) ~~_~~ P−Ch ~~|~~ TTAA = 85 = 25 °° CC ~~||~~ −0.7750.46 G1 2 5 G2 ~~a|~~ TA = 85 ° C ~~||~~ −0.558 ~~|~~ Continuous Drain Current N−Ch TA = 25 ° C 0.91 D2 3 4 S2 − Steady State (Based on R JL) ~~_~~ P−Ch ~~|~~ TTAA = 85 = 25 °° CC ~~||~~ 0.65−1.1 Top View ~~a|~~ TA = 85 ° C ~~||~~ −0.8 ~~es~~ Pulsed Drain Current tp ≤ ~~ee~~ 10 s IDM ~~ss~~ ± 1.2 A Power Dissipation − Steady State TA = 25 ° C PD 0.27 W **MARKING DIAGRAM &** ~~a~~ (Based on R JA) ~~|~~ TA = 85 ° C ~~|~~ 0.14 **PIN ASSIGNMENT** Power Dissipation − Steady State TA = 25 ° C 0.55 D1 G2 S2 ~~|~~ (Based on R JL) TA = 85 ° C 0.29 |e 6 Operating Junction and Storage Temperature TJ, −55 to ° C 1 TC M TSTG 150 **SC−88/SOT−363** ~~oo]~~ Source Current (Body Diode) N−Ch IS 0.63 A **CASE 419B** a P−Ch −0.775 **STYLE 28** 1 - ~~eSee~~ Lead Temperature for Soldering Purposes TL 260 ° C S1 G1 D2 ~~ee~~ (1/8” from case for 10 s) TC = Device Code **THERMAL RESISTANCE RATINGS** (Note 1) M = Date Code Junction−to−Ambient Typ R JA 400 ° C/W = Pb−Free Package – Steady State Max 460 ~~eS|~~ ~~**|**~~ (Note: Microdot may be in either location) Junction−to−Lead (Drain) Typ R JL 194 – Steady State Max 226 **ORDERING INFORMATION** ~~a| |~~ Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. 1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2006 **March, 2006 − Rev. 2** **NTJD4105C/D** ## **NTJD4105C** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERI**|**STICS**(TJ|= 25°C|unless otherwise noted)|unless otherwise noted)||||| |---|---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**N/P**|**Test Condition**||**Min**|**Typ**|**Max**|**Units**| |**OFF CHARACTERISTICS**||||||||| |Drain−to−Source<br>Breakdown Voltage|V(BR)DSS|N|VGS= 0 V|ID= 250�A|20|27||V| |||P||ID= −250�A|−8.0|−10.5||| |Drain−to−Source Breakdown<br>Voltage Temperature Coeffi-<br>cient|V(BR)DSS<br>/ TJ|N||||22||mV/°C| |||P||||−6.0||| |Zero Gate Voltage Drain Cur-<br>rent|IDSS|N|VGS= 0 V, VDS= 16 V|TJ= 25°C|||1.0|�A| |||P|VGS= 0 V, VDS= −6.4 V||||1.0|| |Gate−to−Source<br>Leakage Current|IGSS|N|VDS= 0 V|VGS=±12 V|||10|�A| |||P||VGS=±8.0|||10|| |**ON CHARACTERISTICS**(Note 2)||||||||| |Gate Threshold Voltage|VGS(TH)|N|VGS= VDS|ID= 250�A|0.6|0.92|1.5|V| |||P||ID= −250�A|−0.45|−0.83|−1.0|| |Gate Threshold<br>Temperature Coefficient|VGS(TH)/<br>TJ|N||||−2.1||−mV/°C| |||P||||2.2||| |Drain−to−Source On Resist-<br>ance|RDS(on)|N|VGS= 4.5 V ID= 0.63 A|||0.29|0.375|�| |||P|VGS= −4.5 V, ID= −0.57 A|||0.22|0.30|| |||N|VGS= 2.5 V, ID= 0.40 A|||0.36|0.445|| |||P|VGS= −2.5 V, ID= −0.48 A|||0.32|0.46|| |||P|VGS= −1.8 V, ID= −0.20 A|||0.51|0.90|| |Forward Transconductance|gFS|N|VDS= 4.0 V ID= 0.63 A|||2.0||S| |||P|VDS= −4.0 V,ID= −0.57 A|||2.0||| |**CHARGES AND CAPACITANCES**||||||||| |Input Capacitance|CISS|N|f = 1 MHz, VGS= 0 V|VDS= 20 V||33|46|pF| |||P||VDS= −8.0V||160|225|| |Output Capacitance|COSS|N||VDS= 20 V||13|22|| |||P||VDS= −8.0 V||38|55|| |Reverse Transfer Capacitance|CRSS|N||VDS= 20 V||2.8|5.0|| |||P||VDS= −8.0 V||28|40|| |Total Gate Charge|QG(TOT)|N|VGS= 4.5 V, VDS= 10 V, ID= 0.7 A|||1.3|3.0|nC| |||P|VGS= −4.5 V, VDS= −5.0 V, ID= −0.6 A|||2.2|4.0|| |Threshold Gate Charge|QG(TH)|N|VGS= 4.5 V, VDS= 10 V, ID= 0.7 A|||0.1||| |||P|VGS= −4.5 V, VDS= −5.0 V, ID= −0.6 A|||0.1||| |Gate−to−Source Charge|QGS|N|VGS= 4.5 V, VDS= 10 V, ID= 0.7 A|||0.2||| |||P|VGS= −4.5 V, VDS= −5.0 V, ID= −0.6 A|||0.5||| |Gate−to−Drain Charge|QGD|N|VGS= 4.5 V, VDS= 10 V, ID= 0.7 A|||0.4||| |||P|VGS= −4.5 V,VDS= −5.0|V,ID= −0.6 A||0.5||| |**SWITCHING CHARACTERISTICS**(Note 3)||||||||| |Turn−On Delay Time|td(ON)|N|VGS= 4.5 V, VDD=<br>ID= 0.5 A, RG=|10 V,<br>20 �||0.083||�s| |Rise Time|tr|||||0.227||| |Turn−Off Delay Time|td(OFF)|||||0.786||| |Fall Time|tf|||||0.506||| |Turn−On Delay Time|td(ON)|P|VGS= −4.5 V, VDD=<br>ID= −0.5 A, RG=|−4.0 V,<br>8.0 �||0.013||| |Rise Time|tr|||||0.023||| |Turn−Off Delay Time|td(OFF)|||||0.050||| |Fall Time|tf|||||0.036||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||| |Forward Diode Voltage|VSD|N|VGS= 0 V, TJ= 25°C|IS= 0.23 A||0.76|1.1|V| |||P||IS= −0.23 A||0.76|1.1|| |||N|VGS= 0 V, TJ= 125°C|IS= 0.23 A||0.63||| |||P||IS= −0.23 A||0.63||| |Reverse Recovery Time|tRR|N|VGS= 0 V,<br>dIS/dt= 90 A/�s|IS= 0.23 A||0.410||�s| |||P||IS= −0.23 A||0.078||| 2. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. **http://onsemi.com** **2** **NTJD4105C** ## **TYPICAL N−CHANNEL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) **==> picture [490 x 383] intentionally omitted <==** **----- Start of picture text -----**<br> 1.4 1.2<br>VGS = 4.5 V to 2.2 V TJ = 25 ° C VDS ≥ 10 V<br>1.2 VGS = 2 V 1<br>1.8 V<br>1<br>0.8<br>0.8<br>0.6<br>1.6 V<br>0.6<br>0.4<br>0.4 TJ = 125 ° C<br>1.4 V<br>0.2 0.2 25 ° C<br>1.2 V TJ = −55 ° C<br>0 0<br>0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2 2.4<br>VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>0.7 0.7<br>VGS = 4.5 V VGS = 2.5 V<br>0.6 0.6 TJ = 125 ° C<br>0.5 0.5<br>TJ = 125 ° C<br>0.4 0.4 TJ = 25 ° C<br>0.3 TJ = 25 ° C 0.3 TJ = −55 ° C<br>TJ = −55 ° C<br>0.2 0.2<br>0.1 0.1<br>0 0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)<br>DRAIN CURRENT (AMPS) DRAIN CURRENT (AMPS)<br>ID, ID,<br>) � ) �<br>DRAIN−TO−SOURCE RESISTANCE ( DRAIN−TO−SOURCE RESISTANCE (<br>DS(on), DS(on),<br>R R<br>**----- End of picture text -----**<br> **Figure 3. On−Resistance vs. Drain Current and Temperature** **Figure 4. On−Resistance vs. Drain Current and Temperature** **==> picture [487 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 2 80<br>ID = 0.63 A TJ = 25 ° C<br>1.8 VGS = 4.5 V VGS = 0 V<br>and 2.5 V<br>60<br>1.6<br>1.4<br>40 Ciss<br>1.2<br>1<br>20 Coss<br>0.8 Crss<br>0.6 0<br>−50 −25 0 25 50 75 100 125 150 0 5 10 15 20<br>TJ, JUNCTION TEMPERATURE ( ° C) DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>DRAIN−TO−SOURCE<br>C, CAPACITANCE (pF)<br>DS(on),<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br> **Figure 5. On−Resistance Variation with Temperature** **Figure 6. Capacitance Variation** **http://onsemi.com** **3** **NTJD4105C** **TYPICAL N−CHANNEL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) **==> picture [233 x 206] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>QG(TOT)<br>4<br>VGS<br>3<br>2 QGS QGD<br>1<br>ID = 0.63 A<br>TJ = 25 ° C<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>Qg, TOTAL GATE CHARGE (nC)<br>Figure 7. Gate−to−Source and<br>Drain−to−Source Voltage vs. Total Charge<br>GATE−TO−SOURCE VOLTAGE (VOLTS)<br>GS,<br>V<br>**----- End of picture text -----**<br> **==> picture [234 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 0.7<br>VGS = 0 V<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1 TJ = 150 ° C<br>TJ = 25 ° C<br>0<br>0 0.2 0.4 0.6 0.8 1<br>VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)<br>, SOURCE CURRENT (AMPS)<br>IS<br>**----- End of picture text -----**<br> **Figure 8. Diode Forward Voltage vs. Current** **http://onsemi.com** **4** **NTJD4105C** ## **TYPICAL P−CHANNEL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) **==> picture [234 x 383] intentionally omitted <==** **----- Start of picture text -----**<br> 1.4<br>VGS = −4.5 V to −2.6 V TJ = 25 ° C<br>1.2 VGS = −2.2 V<br>−2 V −1.8 V<br>1<br>0.8<br>−1.6 V<br>0.6<br>0.4<br>−1.4 V<br>0.2<br>−1.2 V<br>0<br>0 2 4 6 8<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>Figure 9. On−Region Characteristics<br>0.5<br>VGS = −4.5 V<br>0.4<br>0.3 TJ = 125 ° C<br>TJ = 25 ° C<br>0.2<br>TJ = −55 ° C<br>0.1<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>−ID, DRAIN CURRENT (AMPS)<br>DRAIN CURRENT (AMPS)<br>D,<br>−I<br>) �<br>DRAIN−TO−SOURCE RESISTANCE (<br>DS(on),<br>R<br>**----- End of picture text -----**<br> **Figure 11. On−Resistance vs. Drain Current and Temperature** **==> picture [238 x 382] intentionally omitted <==** **----- Start of picture text -----**<br> 1.4<br>VDS ≥ −10 V<br>1.2<br>1<br>0.8<br>0.6<br>0.4 TJ = 125 ° C<br>0.2 25 ° C<br>TJ = −55 ° C<br>0<br>0 0.4 0.8 1.2 1.6 2 2.4<br>−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)<br>Figure 10. Transfer Characteristics<br>0.5<br>VGS = −2.5 V<br>0.4 TJ = 125 ° C<br>TJ = 25 ° C<br>0.3<br>TJ = −55 ° C<br>0.2<br>0.1<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>−ID, DRAIN CURRENT (AMPS)<br>DRAIN CURRENT (AMPS)<br>D,<br>−I<br>) �<br>DRAIN−TO−SOURCE RESISTANCE (<br>DS(on),<br>R<br>**----- End of picture text -----**<br> **Figure 12. On−Resistance vs. Drain Current and Temperature** **==> picture [487 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 1.6 300<br>ID = −0.7 A TJ = 25 ° C<br>VGS = −4.5 V VGS = 0 V<br>1.4 and −2.5 V 240<br>Ciss<br>1.2 180<br>1 120<br>Coss<br>0.8 60<br>Crss<br>0.6 0<br>−50 −25 0 25 50 75 100 125 150 −8 −6 −4 −2 0<br>TJ, JUNCTION TEMPERATURE ( ° C) GATE−TO−SOURCE OR DRAIN−TO−SOURCE<br>VOLTAGE (VOLTS)<br>DRAIN−TO−SOURCE<br>C, CAPACITANCE (pF)<br>DS(on),<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br> **Figure 13. On−Resistance Variation with Temperature** **Figure 14. Capacitance Variation** **http://onsemi.com** **5** **NTJD4105C** **TYPICAL P−CHANNEL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) **==> picture [233 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>QG(TOT)<br>4<br>VGS<br>3<br>2 QGS QGD<br>1<br>ID = −0.6 A<br>TJ = 25 ° C<br>0<br>0 0.4 0.8 1.2 1.6 2 2.4<br>Qg, TOTAL GATE CHARGE (nC)<br>GATE−TO−SOURCE VOLTAGE (VOLTS)<br>GS,<br>−V<br>**----- End of picture text -----**<br> **Figure 15. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** **==> picture [234 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 0.7<br>VGS = 0 V<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1 TJ = 150 ° C<br>TJ = 25 ° C<br>0<br>0 0.2 0.4 0.6 0.8 1<br>−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)<br>, SOURCE CURRENT (AMPS)<br>S<br>−I<br>**----- End of picture text -----**<br> **Figure 16. Diode Forward Voltage vs. Current** **http://onsemi.com** **6** **NTJD4105C** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**†| |NTJD4105CT1|SOT−363|3000 / Tape & Reel| |NTJD4105CT1G|SOT−363<br>(Pb−Free)|3000 / Tape & Reel| |NTJD4105CT2|SOT−363|3000 / Tape & Reel| |NTJD4105CT2G|SOT−363<br>(Pb−Free)|3000 / Tape & Reel| |NTJD4105CT4|SOT−363|10,000 / Tape & Reel| |NTJD4105CT4G|SOT−363<br>(Pb−Free)|10,000 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **http://onsemi.com** **7** **NTJD4105C** ## **PACKAGE DIMENSIONS** ## **SC−88/SC70−6/SOT−363** CASE 419B−02 ISSUE W **==> picture [475 x 521] intentionally omitted <==** **----- Start of picture text -----**<br> NOTES:<br>D 1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>e 2. CONTROLLING DIMENSION: INCH.<br>3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.<br>A3 MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>6 5 4 A 0.80 0.95 1.10 0.031 0.037 0.043<br>(i C A1 0.00 0.05 0.10 0.000 0.002 0.004<br>HE −E− A3 0.20 REF 0.008 REF<br>b 0.10 0.21 0.30 0.004 0.008 0.012<br>1 2 3 C 0.10 0.14 0.25 0.004 0.005 0.010<br>D 1.80 2.00 2.20 0.070 0.078 0.086<br>E 1.15 1.25 1.35 0.045 0.049 0.053<br>L e 0.65 BSC 0.026 BSC<br>b 6 PL L 0.10 0.20 0.30 0.004 0.008 0.012<br>ue oh ======= HE 2.00 2.10 2.20 0.078 0.082 0.086<br>0.2 (0.008) M E M STYLE 26:<br>PIN 1. SOURCE 1<br> 2. GATE 1<br> 3. DRAIN 2<br>A 4. SOURCE 2<br> 5. GATE 2<br> 6. DRAIN 1<br>A,<br>L A1 SOLDERING FOOTPRINT*<br>0.50<br>— 0.0197<br>0.025 7 0.65<br>0.65<br>0.025<br>0.40<br>0.0157<br>EP8-8]EH<br>1.9<br>0.0748 SCALE 20:1 mm<br>inches<br>-— — —_4 (—)<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice<br>to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability<br>arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.<br>“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All<br>operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights<br>nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications<br>intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer<br>purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,<br>and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death<br>associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal<br>Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.<br>**----- End of picture text -----**<br> ## **PUBLICATION ORDERING INFORMATION** **N. American Technical Support** : 800−282−9855 Toll Free USA/Canada **ON Semiconductor Website** : http://onsemi.com ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA **Order Literature** : http://www.onsemi.com/litorder **Phone** : 480−829−7710 or 800−344−3860 Toll Free USA/Canada **Japan** : ON Semiconductor, Japan Customer Focus Center **Fax** : 480−829−7709 or 800−344−3867 Toll Free USA/Canada 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 For additional information, please contact your **Email** : orderlit@onsemi.com **Phone** : 81−3−5773−3850 local Sales Representative. **http://onsemi.com** **NTJD4105C/D** **8**
Updated at June 9, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →