NTJD4001NT1G

## NTJD4001N, NVTJD4001N 

## Small Signal MOSFET 

## **30 V, 250 mA, Dual N−Channel, SC−88** 

## **Features** 

- Low Gate Charge for Fast Switching 

- Small Footprint − 30% Smaller than TSOP−6 

**www.onsemi.com** 

- ESD Protected Gate 

- AEC Q101 Qualified − NVTJD4001N 

- These Devices are Pb−Free and are RoHS Compliant 

## **Applications** 

- Low Side Load Switch 

- Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC 

- Buck Converters 

~~ee~~ **V(BR)DSS RDS(on** ~~es~~ **) TYP ID Max** 1.0  @ 4.0 V 30 V 250 mA 1.5  @ 2.5 V ~~eee~~ 

**SOT−363 SC−88 (6 LEADS)** 

- Level Shifts 

**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) 

~~a~~ **Parameter Symbol Value Units** Drain−to−Source Voltage VDSS 30 V ~~a~~ Gate−to−Source Voltage VGS ± 20 V ~~a~~ Continuous Drain Steady TA = 25 ° C ID 250 mA Current (Note 1) State TA = 85 ° C 180 ~~a~~ Power Dissipation Steady TA = 25 ° C PD 272 mW (Note 1) State ~~a eeee~~ Pulsed Drain Current t =10 s IDM 600 mA ~~pT eePoe~~ Operating Junction and Storage Temperature TJ, TSTG −55 to ° C 150 ~~Pe~~ Source Current (Body Diode) IS 250 mA ~~a~~ Lead Temperature for Soldering Purposes TL 260 ° C (1/8” from case for 10 s) ~~Pe~~ **THERMAL RESISTANCE RATINGS** (Note 1) ~~a~~ **Parameter Symbol Value Unit** Junction−to−Ambient − Steady State R JA 458 ° C/W ~~**e**~~ Junction−to−Lead − Steady State ~~SeSe~~ R JL 252 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Surface mounted on FR4 board using min pad size (Cu area = 0.155 in sq [1 oz] including traces). 

**==> picture [144 x 106] intentionally omitted <==**

**----- Start of picture text -----**<br>
S1 1 6 D1<br>G1 2 5 G2<br>D2 3 4 S2<br>Top View<br>**----- End of picture text -----**<br>


**==> picture [157 x 149] intentionally omitted <==**

**----- Start of picture text -----**<br>
MARKING DIAGRAM &<br>PIN ASSIGNMENT<br>D1 G2 S2<br>DP 6<br>1<br>f Tor TE M<br>SOT−363<br>CASE 419B<br>STYLE 26<br>1 —<br>S1 G1 D2<br>TE = Device Code<br>M = Date Code<br>= Pb−Free Package<br>(Note: Microdot may be in either location) .<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|NTJD4001NT1G|SOT−363<br>(Pb−Free)|3000 / Tape &<br>Reel|
|NVTJD4001NT1G|SOT−363<br>(Pb−Free)|3000 / Tape &<br>Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2015 **May, 2015 − Rev. 7** 

**NTJD4001N/D** 

## **NTJD4001N, NVTJD4001N** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise stated) 

|**ELECTRICAL CHARACTERISTIC**|**S**(TJ= 25°C u|nless otherwise stated)|nless otherwise stated)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 100�A||30|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ||||56||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V, VDS= 30 V||||1.0|�A|
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=±10 V||||±1.0|�A|
|**ON CHARACTERISTICS**(Note 2)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 100�A||0.8|1.2|1.5|V|
|Gate Threshold Temperature<br>Coefficient|VGS(TH)/TJ||||−3.2||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 4.0 V, ID= 10 mA|||1.0|1.5|�|
|||VGS= 2.5 V, ID= 10 mA|||1.5|2.5||
|Forward Transconductance|gFS|VDS= 3.0 V, ID= 10 mA|||80||mS|
|**CHARGES AND CAPACITANCES**||||||||
|Input Capacitance|CISS|VGS= 0 V, f = 1.0 MHz,<br>VDS= 5.0 V|||20|33|pF|
|Output Capacitance|COSS||||19|32||
|Reverse Transfer Capacitance|CRSS||||7.25|12||
|Total Gate Charge|QG(TOT)|VGS= 5.0 V, VDS= 24 V,<br>ID= 0.1 A|||0.9|1.3|nC|
|Threshold Gate Charge|QG(TH)||||0.2|||
|Gate−to−Source Charge|QGS||||0.3|||
|Gate−to−Drain Charge|QGD||||0.2|||
|**SWITCHING CHARACTERISTICS**(Note 3)||||||||
|Turn−On Delay Time|td(ON)|VGS= 4.5 V, VDD= 5.0 V,<br>ID= 10 mA, RG= 50�|||17||ns|
|Rise Time|tr||||23|||
|Turn−Off Delay Time|td(OFF)||||94|||
|Fall Time|tf||||82|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 10 mA|TJ= 25°C||0.65|0.7|V|
||||TJ= 125°C||0.45|||
|Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 8.0 A/�s,<br>IS= 10 mA|||12.4||ns|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

2. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2%. 

3. Switching characteristics are independent of operating junction temperatures. 

**www.onsemi.com** 

**2** 

**NTJD4001N, NVTJD4001N** 

## **TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) 

**==> picture [491 x 632] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.2 0.1<br>VGS = 10 V to 3 V TJ = 25 ° C<br>0.18 VDS = 5 V<br>VGS = 2.75 V<br>0.16 0.08<br>2.5 V<br>0.14 2.25 V<br>0.12 0.06<br>0.1 TJ = 125 ° C<br>0.08 0.04<br>0.06 2 V 25 ° C<br>0.04 0.02<br>0.02 1.75 V TJ = −55 ° C<br>1.5 V<br>0 0<br>0 0.4 0.8 1.2 1.6 2 1 1.2 1.4 1.6 1.8 2 2.2<br>VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>1.25 1.25<br>VGS = 10 V TJ = 25 ° C<br>TJ = 125 ° C<br>1.0 1.0<br>VGS = 4.5 V<br>0.75 0.75<br>TJ = 25 ° C VGS = 10 V<br>0.5 TJ = −55 ° C 0.5<br>0.25 0.25<br>0.005 0.055 0.105 0.155 0.205 0.005 0.055 0.105 0.155 0.205<br>ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)<br>Figure 3. On−Resistance vs. Drain Current and Figure 4. On−Resistance vs. Drain Current and<br>Temperature Gate Voltage<br>2 10000<br>1.8 ID = 0.01 A VGS = 0 V<br>VGS = 10 V<br>1.6<br>1.4<br>1000<br>1.2<br>1<br>TJ = 150 ° C<br>0.8<br>100<br>0.6<br>0.4<br>TJ = 125 ° C<br>0.2<br>0 10<br>−50 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 30<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current<br>Temperature vs. Voltage<br>DRAIN CURRENT (AMPS) DRAIN CURRENT (AMPS)<br>ID,  ID,<br>) � ) �<br>DRAIN−TO−SOURCE RESISTANCE ( DRAIN−TO−SOURCE RESISTANCE (<br>DS(on),  DS(on),<br>R R<br>, LEAKAGE (nA)<br>DRAIN−TO−SOURCE<br>IDSS<br>DS(on),<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


**www.onsemi.com** 

**3** 

**NTJD4001N, NVTJD4001N** 

## **TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) 

**==> picture [487 x 395] intentionally omitted <==**

**----- Start of picture text -----**<br>
50 5<br>VDS = 0 V VGS = 0 V TJ = 25 ° C QG<br>40 Ciss 4<br>30 Crss 3<br>QGS QGD<br>20 Ciss 2<br>Coss<br>10 1<br>Crss ID = 0.1 A<br>TJ = 25 ° C<br>0 0<br>10 5 0 5 10 15 20 25 0 0.2 0.4 0.6 0.8 1<br>VGS VDS QG, TOTAL GATE CHARGE (nC)<br>GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>Figure 8. Gate−to−Source Voltage vs. Total<br>Figure 7. Capacitance Variation Gate Charge<br>0.1<br>VGS = 0 V<br>TJ = 25 ° C<br>0.08<br>0.06<br>0.04<br>0.02<br>0<br>0.5 0.55 0.6 0.65 0.7 0.75<br>VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>GATE−TO−SOURCE VOLTAGE (VOLTS)<br>GS,<br>V<br>, SOURCE CURRENT (AMPS)<br>IS<br>**----- End of picture text -----**<br>


**Figure 9. Diode Forward Voltage vs. Current** 

**==> picture [490 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>D = 0.5<br>0.2<br>100<br>0.1<br>0.05<br>0.02<br>10<br>0.01<br>SINGLE PULSE<br>1<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME t,(s)<br>r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE<br>**----- End of picture text -----**<br>


**Figure 10. Thermal Response** 

**www.onsemi.com** 

**4** 

**NTJD4001N, NVTJD4001N** 

## **PACKAGE DIMENSIONS** 

**==> picture [453 x 413] intentionally omitted <==**

**----- Start of picture text -----**<br>
SC−88/SC70−6/SOT−363<br>CASE 419B−02<br>ISSUE W<br>NOTES:<br>D 1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>e 2. CONTROLLING DIMENSION: INCH.<br>3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.<br>A3 MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>6 5 4 A 0.80 0.95 1.10 0.031 0.037 0.043<br>C A1 0.00 0.05 0.10 0.000 0.002 0.004<br>HE −E− A3 0.20 REF 0.008 REF<br>b 0.10 0.21 0.30 0.004 0.008 0.012<br>ai 1 2 3  Hl ry ————— C 0.10 0.14 0.25 0.004 0.005 0.010<br>D 1.80 2.00 2.20 0.070 0.078 0.086<br>E 1.15 1.25 1.35 0.045 0.049 0.053<br>ri 7 L = e 0.65 BSC 0.026 BSC<br>b 6 PL L 0.10 0.20 0.30 0.004 0.008 0.012<br>a HE 2.00 2.10 2.20 0.078 0.082 0.086<br>0.2 (0.008) M E M STYLE 26:<br>PIN 1. SOURCE 1<br> 2. GATE 1<br> 3. DRAIN 2<br>A  4. SOURCE 2<br> 5. GATE 2<br>A,  6. DRAIN 1<br>LL A1 SOLDERING FOOTPRINT*<br>0.50<br>0.0197<br>Wl Ee<br>0.65<br>0.025<br>0.65<br>a | _<br>0.025<br>0.40<br>0.0157<br>ES<br>Phe7 | 7<br>ee 1.9<br>0.0748 SCALE 20:1 mm<br>() inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

ON Semiconductor and the         are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf.  SCILLC reserves the right to make changes without further notice to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.  All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  SCILLC does not convey any license under its patent rights nor the rights of others.  SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  SCILLC is an Equal Opportunity/Affirmative Action Employer.  This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**N. American Technical Support** : 800−282−9855 Toll Free USA/Canada **Europe, Middle East and Africa Technical Support:** Phone: 421 33 790 2910 

**ON Semiconductor Website** : **www.onsemi.com** 

## **LITERATURE FULFILLMENT** : 

Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative 

**www.onsemi.com** 

**NTJD4001N/D** 

**5**