NTJD1155LT1G

NTJD1155L 

## Power MOSFET 

## **8 V, 1.3 A, High Side Load Switch with** + **Level−Shift, P−Channel SC−88** 

The NTJD1155L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The P−Channel device is specifically designed as a load switch using ON Semiconductor state−of−the−art trench technology. The N−Channel, with an external resistor (R1), functions as a level−shift to drive the P−Channel. The N−Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTJD1155L operates on supply lines from 1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both VIN and VON/OFF. 

## **Features** 

- Extremely Low RDS(on) P−Channel Load Switch MOSFET 

- Level Shift MOSFET is ESD Protected 

- Low Profile, Small Footprint Package 

- VIN Range 1.8 to 8.0 V 

- ON/OFF Range 1.5 to 8.0 V 

- These Devices are Pb−Free and are RoHS Compliant 

**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|C unless otherwise noted)|C unless otherwise noted)||
|---|---|---|---|---|---|
|**Rating**<br>~~ee~~|||**Symbol**<br>~~ee~~|**Value**<br>~~ee~~|**Unit**<br>~~ee~~|
|Input Voltage (VDSS, P−Ch)<br>~~ee~~<br>~~a~~<br>~~Pot~~|||VIN<br>~~ee~~<br>~~a~~|8.0<br>~~ee~~<br>~~a~~|V<br>~~ee~~<br>~~a~~|
|ON/OFF Voltage (VGS, N−Ch)<br>~~a~~<br>~~Pot~~|||VON/OFF<br>~~a~~|8.0<br>~~a~~|V<br>~~a~~|
|Continuous Load Current<br>(Note 1)<br>~~Pot~~|Steady<br>State<br>~~Pot~~|TA= 25°C<br>~~ee~~|IL|±1.3|A|
|||TA= 85°C<br>~~ee~~||±0.9||
|Power Dissipation<br>(Note 1)<br>~~Pot~~<br>~~Pot~~|Steady<br>State<br>~~Pot~~<br>~~Pot~~|TA= 25°C<br>~~Pot~~|PD<br>~~Pot~~|0.40<br>~~Pot~~|W<br>~~Pot~~|
|||TA= 85°C<br>~~Pot~~<br>~~ee~~||0.20<br>~~Pot~~||
|Pulsed Load Current<br>~~a~~|tp= 10 s<br>||ILM<br>|±3.9<br>|A<br>|
|Operating Junction and Storage Temperature<br>~~ee~~|||TJ,<br>TSTG<br>~~ee ee~~|−55 to<br>150<br>~~ee~~|°C<br>~~ee~~|
|Source Current (Body Diode)<br>~~ee~~|||IS<br>~~ee ee~~|−0.4<br>~~ee~~|A<br>~~ee~~|
|Lead Temperature for Soldering Purposes<br>(1/8″from case for 10 s)<br>~~ee~~|||TL<br>~~ee ee~~|260<br>~~ee~~|°C<br>~~ee~~|



## **http://onsemi.com** 

|**V(BR)DSS**|**RDS(on) TYP**|**ID MAX**|
|---|---|---|
|8.0 V|130 m @ −4.5 V|±1.3 A|
||170 m @ −2.5 V||
||260 m @ −1.8 V||



## **SIMPLIFIED SCHEMATIC** 

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4 2,3<br>Q2<br>6<br>5 Q1<br>1<br>MARKING<br>SC−88 DIAGRAM<br>(SOT−363)<br>1 CASE 419B a<br>STYLE 30 TB M<br>TB = Device Code<br>M = Date Code 1<br>, = Pb−Free Package rt<br>(Note: Microdot may be in either location) |<br>PIN ASSIGNMENT<br>D1/G2 G1 S2<br>6 5 4<br>t 1 a 2 r 3<br>S1 D2 D2<br>**----- End of picture text -----**<br>


|**Device**<br>**Package**<br>**Shipping**†<br>**ORDERING INFORMATION**<br>NTJD1155LT1G<br>SC−88<br>(Pb−Free)<br>3000/Tape & Reel<br>~~—~~|**Device**<br>**Package**<br>**Shipping**†<br>**ORDERING INFORMATION**<br>NTJD1155LT1G<br>SC−88<br>(Pb−Free)<br>3000/Tape & Reel<br>~~—~~|**Device**<br>**Package**<br>**Shipping**†<br>**ORDERING INFORMATION**<br>NTJD1155LT1G<br>SC−88<br>(Pb−Free)<br>3000/Tape & Reel<br>~~—~~|
|---|---|---|
||†For information on tape and reel specifications,<br>including part orientation and tape sizes, please||
||refer to our Tape and Reel Packaging Specification||
||Brochure, BRD8011/D.||



Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2012 **November, 2012 − Rev. 5** 

**NTJD1155L/D** 

**NTJD1155L** 

**ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**Characteristic**|**Symbol**|**Test Condition**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|**OFF CHARACTERISTICS**||||||||
|Q2 Drain−to−Source Breakdown Voltage|VIN|VGS2= 0 V, ID2=|250�A|−8.0|||V|
|Forward Leakage Current|IFL|VGS1= 0 V,<br>VDS2= −8.0 V|TJ= 25°C|||1.0|�A|
||||TJ= 125°C|||10||
|Q1 Gate−to−Source Leakage Current|IGSS|VDS1= 0 V, VGS1=±8.0 V||||±100|nA|
|Q1 Diode Forward  On−Voltage|VSD|IS= −0.4 A, VGS1= 0 V|||−0.8|−1.1|V|
|**ON CHARACTERISTICS**||||||||
|ON/OFF Voltage|VON/OFF|||1.5||8.0|V|
|Q1 Gate Threshold Voltage|VGS1(th)|VGS1= VDS1, ID=|250�A|0.4||1.0|V|
|Input Voltage|VIN|VGS1= VDS1, ID=|250�A|1.8||8.0|V|
|Q2 Drain−to−Source On Resistance|RDS(on)|VON/OFF= 1.5 V|VIN= 4.5 V<br>IL= 1.2 A||130|175|m�|
||||VIN= 2.5 V<br>IL= 1.0 A||170|220||
||||VIN= 1.8 V<br>IL= 0.7 A||260|320||
|Load Current|IL|VDROP ≤0.2 V, VIN= 5.0 V,<br>VON/OFF= 1.5 V||1.0|||A|
|||VDROP ≤0.3 V, VIN= 2.5 V,<br>VON/OFF= 1.5 V||1.0||||



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4 2,3<br>VIN VOUT<br>Q2<br>R1 C1<br>6 6<br>ON/OFF 5 CO LOAD<br>Q1<br>1<br>CI<br>R2<br>R2 GND<br>**----- End of picture text -----**<br>


**Figure 1. Load Switch Application** 

|**Components**|**Description**|**Values**|
|---|---|---|
|R1|Pullup Resistor|Typical 10 k�to 1.0 M�*|
|R2|Optional Slew−Rate Control|Typical 0 to 100 k�*|
|CO, CI|Output Capacitance|Usually < 1.0�F|
|C1|Optional In−Rush Current Control|Typical≤1000 pF|



*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn−on. 

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**NTJD1155L** 

## **TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) 

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0.70 0.50<br>0.65<br>0.45<br>0.60<br>0.55 0.40<br>0.500.45 TJ = 125 ° C 0.35 TJ = 125 ° C<br>0.30<br>0.40<br>0.35 0.25<br>0.30<br>0.25 TJ = 25 ° C 0.20 TJ = 25 ° C<br>0.20 0.15<br>0.15 0.10<br>0.10<br>0.05<br>0.05<br>0 0<br>0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0<br>IL (AMPS) IL (AMPS)<br>Figure 2. Vdrop vs. IL @ Vin = 2.5 V Figure 3. Vdrop vs. IL @ Vin = 4.5 V<br>0.8 0.31<br>0.7 IL = 1 A IL = 1 A Vin = 1.8 V<br>VON/OFF = 1.5 to 8 V 0.26 VON/OFF = 1.5 to 8 V<br>0.6<br>0.21<br>0.5<br>0.4 0.16<br>0.3<br>0.11 Vin = 5 V<br>0.2 TJ = 125 ° C<br>0.06<br>0.1<br>TJ = 25 ° C<br>0.0 0.01<br>1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 −50 −25 0 25 50 75 100 125 150<br>VIN (VOLTS) TJ, JUNCTION TEMPERATURE ( ° C)<br>Figure 4. On−Resistance vs. Input Voltage Figure 5. On−Resistance Variation with<br>Temperature<br>1.7 44<br>IL = 1 A 40 I L  = 1 A<br>VON/OFF = 1.5 to 8 V VON/OFF = 1.5 V<br>36<br>1.5 Ci = 10  � F<br>32 Co = 1  � F tr<br>28<br>1.3<br>Vin = 5 V 24<br>td(off)<br>20<br>1.1<br>Vin = 1.8 V 16 t f<br>12<br>0.9 8<br>4 t d(on)<br>0.7 0<br>−50 −25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8<br>TJ, JUNCTION TEMPERATURE ( ° C) R2 (k � )<br> (V)  (V)<br>DROP DROP<br>V V<br>) � ) �<br>DRAIN−TO−SOURCE RESISTANCE ( DRAIN−TO−SOURCE RESISTANCE (<br>DS(on),  DS(on),<br>R R<br>s)<br>�<br>TIME (<br>DRAIN−TO−SOURCE<br>DS(on),<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


**Figure 6. Normalized On−Resistance Variation with Temperature** 

**Figure 7. Switching Variation R2 @ Vin = 4.5 V, R1 = 20 k �** 

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**3** 

**NTJD1155L** 

## **TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) 

**==> picture [487 x 176] intentionally omitted <==**

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22 40<br>20 36 IL = 1 A<br>td(off) VON/OFF = 1.5 V<br>18 32 Ci = 10  � F t r<br>16 tf 28 Co = 1  � F<br>14<br>24<br>12<br>20<br>10 I L  = 1 A 16<br>86 Ci = 10  Von/off = 3 V � F 12 t f td(on)<br>Co = 1  � F tr 8<br>4<br>2 td(on) 4 td(off)<br>0 0<br>0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8<br>R2 (k � ) R2 (k � )<br>s) s)<br>� �<br>TIME ( TIME (<br>**----- End of picture text -----**<br>


**Figure 8. Switching Variation R2 @ Vin = 4.5 V, R1 = 20 k �** 

**Figure 9. Switching Variation R2 @ Vin = 2.5 V, R1 = 20 k �** 

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12<br>10 tf<br>8<br>IL = 1 A td(off)<br>6 Von/off = 3 V<br>Ci = 10  � F<br>Co = 1  � F tr<br>4<br>2 t d(on)<br>0<br>0 1 2 3 4 5 6 7 8<br>R2 (k � )<br>s)<br>�<br>TIME (<br>**----- End of picture text -----**<br>


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r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE<br>**----- End of picture text -----**<br>


**Figure 10. Switching Variation R2 @ Vin = 2.5 V, R1 = 20 k �** 

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10<br>Normalized to R � JA at Steady State ( 1 inch pad)<br>1 D = 0.5<br>0.2<br>P(pk)<br>0.1 R � JC(t) = r(t) R � JC<br>0.1 0.05 D CURVES APPLY FOR POWER<br>0.02 PULSE TRAIN SHOWN<br>0.01 t1 READ TIME AT t1<br>SINGLE PULSE t2 TJ(pk) − TC = P(pk) R � JC(t)<br>DUTY CYCLE, D = t1/t2<br>0.01<br>0.001 0.01 0.1 1 10 100 1000<br>SQUARE WAVE PULSE DURATION TIME t, (s)<br>**----- End of picture text -----**<br>


**Figure 11. FET Thermal Response** 

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**4** 

**NTJD1155L** 

## **PACKAGE DIMENSIONS** 

**SC−88 (SOT−363)** CASE 419B−02 ISSUE W 

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D NOTES:<br>1.<br>e Y14.5M, 1982.<br>2.<br>3.<br>6 5 4<br>4 DIM MIN<br>HE −E− A1AA 0.000.800.80<br>1 2 3 A3<br>b 0.10<br>C 0.10<br>D 1.80<br>E 1.15<br>fe b 6 PL e<br>0.2 (0.008) M E M ee HLELEE 2.000.100.10<br>A3 STYLE 30:<br>PIN 1.<br>_<br> 2.<br>C  3.<br>A  4. 5. 5.<br> 6.<br>L A1 L J it<br>SOLDERING FOOTPRINT*<br>0.50<br>= 0.0197<br>=<br>0.65<br>0.025<br>0.65<br>0.025<br>0.40<br>0.0157<br>PEEP8a]<br>-— yp—— 1.9 _4E E<br>0.0748 SCALE 20:1 mm<br>(—) inches<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.<br>MILLIMETERS INCHES<br>—— DIM MIN NOM MAX — MIN NOM — MAX<br>A1AA 0.000.800.80 0.050.95 0.101.10 0.0310.000 0.0370.002 0.0430.004<br>A3 0.20 REF 0.008 REF<br>b 0.10 0.21 0.30 0.004 0.008 0.012<br>C 0.10 0.14 0.25 0.004 0.005 0.010<br>D 1.80 2.00 2.20 0.070 0.078 0.086<br>E 1.15 1.25 1.35 0.045 0.049 0.053<br>————— e 0.65 BSC 0.026 BSC<br>ee HLELEE 2.000.100.10 oe 2.100.20 2.200.30 0.0040.078 0.0080.082 0.0120.086<br>STYLE 30:<br>PIN 1. SOURCE 1<br> 2. DRAIN 2<br> 3. DRAIN 2<br> 4. 5. 5. SOURCE 2GATE 1<br> 6. DRAIN 1<br>**----- End of picture text -----**<br>


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