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NTHD3100CT1G

Dual MOSFET, Complementary N and P Channel, 20 V, 3.9 A, 0.064 ohm, ChipFET, Surface Mount

  • Manufacturer: ONSEMI
  • Product type: Dual MOSFETs
  • Product variants: No other variants available. No other names.
  • Channel Type: Complementary N and P Channel
  • Power Dissipation N Channel: 1.1W
  • Power Dissipation P Channel: 1.1W
  • Drain Source Voltage Vds N Channel: 20V
  • Drain Source Voltage Vds P Channel: 20V
  • Continuous Drain Current Id N Channel: 3.9A
  • Continuous Drain Current Id P Channel: 3.9A
  • Drain Source On State Resistance N Channel: 0.064ohm
  • Drain Source On State Resistance P Channel: 0.064ohm
Delivery and price
Units per pack 45000
Price 0.388 €
Current stock 765
Lead time 7 days
PDF File icon Datasheet