Image not available
Illustrative purposes only
NTHD3100CT1G
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 3.9 A, 3.9 A, 0.064 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Complement; Continuous Drain Current Id:-3.9A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.064ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: ChipFET
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.1W
- Power Dissipation P Channel: 1.1W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 3.9A
- Continuous Drain Current Id P Channel: 3.9A
- Drain Source On State Resistance N Channel: 0.064ohm
- Drain Source On State Resistance P Channel: 0.064ohm
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.371 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**AND PIN A** ## NTHD3100C ## Power MOSFET ## **20 V, +3.9 A /−4.4 A, Complementary ChipFET** ## **Features** - Complementary N−Channel and P−Channel MOSFET ## **http://onsemi.com** - Small Size, 40% Smaller than TSOP−6 Package **==> picture [190 x 73] intentionally omitted <==** **----- Start of picture text -----**<br> V(BR)DSS RDS(on) Typ ID MAX<br>N−Channel 58 m @ 4.5 V<br>3.9 A<br>20 V 77 m @ 2.5 V<br>= P−Channel 64 m @ −4.5 V<br>−4.4 A<br>−20 V<br>ee 85 m @ −2.5 V<br>**----- End of picture text -----**<br> - Leadless SMD Package Provides Great Thermal Characteristics - Trench P−Channel for Low On Resistance - Low Gate Charge N−Channel for Test Switching - Pb−Free Packages are Available ## **Applications** - DC−DC Conversion Circuits **==> picture [493 x 383] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---| |D|1|S2| |•|Load Switch Applications Requiring Level Shift| |•|Drive Small Brushless DC Motors| |•|Ideal for Power Management Applications in Portable, Battery| |Powered Products|G1|G2| |MAXIMUM RATINGS|(TJ = 25|°|C unless otherwise noted)| |S|1|D2| |ee|Parameter|Symbol|ee|Value|Unit|N−Channel MOSFET|P−Channel MOSFET| |Drain−to−Source Voltage|VDSS|20|V| |eees| |Gate−to−Source Voltage|N−Ch|VGS|12|V| |P−Ch|8.0|8|ChipFET| |CASE 1206A| |N−Channel|Steady|TA = 25|°|C|ID|2.9|A|STYLE 2| |ee|Continuous DrainCurrent (Note 1)|State|TA = 85|°|C|oe|2.1|&|1| |t|≤|10 s|TA = 25|°|C|3.9| |[tere|*| |P−Channel|||Steady|||TA = 25|°|C|ID||||−3.2|A| |Continuous Drain|State| |Current (Note 1)|| ||TA = 85|°|C||||−2.3|PIN|MARKING| |t|≤|10 s|TA = 25|°|C|−4.4|CONNECTIONS|DIAGRAM| |Pou|||| |Power Dissipation|Steady|PD|1.1|W| |(Note 1)|State|TA = 25|°|C|D1|8|1|S1|1|8| |t|≤|5 s|3.1|D1|7|2|G1|2|7| |Po|Pulsed Drain Current|||N−Ch|||t = 10 s|IDM|||12|A||| |(Note 1)|es|P−Ch|t = 10 s|−13|D2|6|3|S2|3|}-|||6| |ee|Operating Junction and Storage Temperature|TJ,|−55 to|°|C|D2|5|4|G2|4|i|5| |TSTG|150| |ee|Source Current (Body Diode)|ee|IS|ee|2.5|A|—| |ee| |Lead Temperature for Soldering Purposes (1/8|″|from case for 10 seconds)|TL|260|°|C|C9M|= Specific Device Code= Month Code| |||= Pb−Free Package| |ee|ee|[ee]| **----- End of picture text -----**<br> Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2006 **March, 2006 − Rev. 3** **NTHD3100C/D** **NTHD3100C** ## **THERMAL RESISTANCE RATINGS** |**THERMAL RESISTANCE RATINGS**|||| |---|---|---|---| |**Parameter**|**Symbol**|**Max**|**Unit**| |Junction−to−Ambient − Steady State (Note 2)|R�JA|113|°C/W| |Junction−to−Ambient − t≤10 s (Note 2)|R�JA|60|°C/W| 2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**Parameter**|**Symbol**|**N/P**|**Test Conditions**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---|---| |**OFF CHARACTERISTICS**(Note 3)||||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|N|VGS= 0 V|ID= 250�A|20|||V| |||P||ID= −250�A|−20|||| |Zero Gate Voltage Drain Current|IDSS|N|VGS= 0 V, VDS= 16 V|TJ= 25°C|||1.0|�A| |||P|VGS= 0 V, VDS= −16 V||||−1.0|| |||N|VGS= 0 V, VDS= 16 V|TJ= 125°C|||5.0|| |||P|VGS= 0 V, VDS= −16 V||||−5.0|| |Gate−to−Source Leakage Current|IGSS|N|VDS= 0 V, VGS=|±12 V|||±100|nA| |||P|VDS= 0 V, VGS=|±8.0 V|||±100|| |**ON CHARACTERISTICS**(Note 3)||||||||| |Gate Threshold Voltage|VGS(TH)|N|VGS= VDS|ID= 250�A|0.6||1.2|V| |||P||ID= −250�A|−.45||−1.5|| |Drain−to−Source On Resistance|RDS(on)|N|VGS= 4.5 V , ID=|2.9 A||58|80|m�| |||P|VGS= −4.5 V , ID=|−3.2 A||64|80|| |||N|VGS= 2.5 V , ID=|2.3 A||77|115|| |||P|VGS= −2.5 V, ID=|−2.2 A||85|110|| |Forward Transconductance|gFS|N|VDS= 10 V, ID=|2.9 A||6.0||S| |||P|VDS= −10 V , ID=|−3.2 A||8.0||| |**CHARGES AND CAPACITANCES**||||||||| |Input Capacitance|CISS|N|f = 1 MHz, VGS= 0 V|VDS= 10 V||165||pF| |||P||VDS= −10 V||680||| |Output Capacitance|COSS|N||VDS= 10 V||80||| |||P||VDS= −10 V||100||| |Reverse Transfer Capacitance|CRSS|N||VDS= 10 V||25||| |||P||VDS= −10 V||70||| |Total Gate Charge|QG(TOT)|N|VGS= 4.5 V, VDS= 10|V, ID= 2.9 A||2.3||nC| |||P|VGS= −4.5 V, VDS= −10 V, ID= −3.2 A|||7.4||| |Threshold Gate Charge|QG(TH)|N|VGS= 4.5 V, VDS= 10 V, ID= 2.9 A|||0.2||| |||P|VGS= −4.5 V, VDS= −10 V, ID= −3.2 A|||0.6||| |Gate−to−Source Gate Charge|QGS|N|VGS= 4.5 V, VDS= 10 V, ID= 2.9 A|||0.4||| |||P|VGS= −4.5 V, VDS= −10 V, ID= −3.2 A|||1.4||| |Gate−to−Drain “Miller” Charge|QGD|N|VGS= 4.5 V, VDS= 10 V, ID= 2.9 A|||0.7||| |||P|VGS= −4.5 V, VDS= −10 V, ID= −3.2 A|||2.5||| 3. Pulse Test: pulse width � 250 � s, duty cycle � 2%. **http://onsemi.com** **2** ## **NTHD3100C** ## **ELECTRICAL CHARACTERISTICS (continued)** (TJ = 25 ° C unless otherwise noted) |**Parameter**|**Symbol**|**N/P**|**Test Conditions**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---|---| |**SWITCHING CHARACTERISTICS**(Note 4)||||||||| |Turn−On Delay Time|td(ON)|N|VGS= 4.5 V, VDD <br>ID= 2.9 A, RG=|= 10 V,<br>2.5�||6.3||ns| |Rise Time|tr|||||10.7||| |Turn−Off Delay Time|td(OFF)|||||9.6||| |Fall Time|tf|||||1.5||| |Turn−On Delay Time|td(ON)|P|VGS= −4.5 V, VDD <br>ID= −3.2 A, RG=|= −10 V,<br>2.5�||5.8||| |Rise Time|tr|||||11.7||| |Turn−Off Delay Time|td(OFF)|||||16||| |Fall Time|tf|||||12.4||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||| |Forward Diode Voltage|VSD|N|VGS= 0 V, TJ= 25°C|IS= 2.5 A||0.8|1.15|V| |||P||IS= −2.5 A||−0.8|−1.2|| |Reverse Recovery Time|tRR|N|VGS= 0 V,<br>dIS/ dt = 100 A/�s|IS= 1.5 A||12.5||ns| |||P||IS= −1.5 A||13.5||| |Charge Time|ta|N||IS= 1.5 A||9.0||| |||P||IS= −1.5 A||9.5||| |Discharge Time|tb|N||IS= 1.5 A||3.5||| |||P||IS= −1.5 A||4.0||| |Reverse Recovery Charge|QRR|N||IS= 1.5 A||6.0||nC| |||P||IS= −1.5 A||6.5||| 4. Switching characteristics are independent of operating junction temperatures. **http://onsemi.com** **3** **NTHD3100C** ## **TYPICAL N−CHANNEL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) **==> picture [234 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 8<br>VGS = 5 V to 3 V TJ = 25 ° C<br>VGS = 2.4 V<br>2.2 V 2 V<br>6<br>4 1.8 V<br>1.6 V<br>2<br>1.4 V<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>DRAIN CURRENT (AMPS)<br>ID,<br>**----- End of picture text -----**<br> **Figure 1. On−Region Characteristics** **==> picture [231 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 8<br>VDS ≥ 10 V<br>6<br>4<br>2 TC = −55 ° C<br>25 ° C 100 ° C<br>0<br>0 0.5 1 1.5 2 2.5 3<br>VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)<br>DRAIN CURRENT (AMPS)<br>ID,<br>**----- End of picture text -----**<br> **Figure 2. Transfer Characteristics** **==> picture [490 x 408] intentionally omitted <==** **----- Start of picture text -----**<br> 0.15 0.1<br>ID = 2.9 A TJ = 25 ° C<br>TJ = 25 ° C<br>VGS = 2.5 V<br>0.1<br>0.07<br>VGS = 4.5 V<br>0.05<br>0 0.04<br>0 1 2 3 4 5 6 1 3 5 7<br>VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>1.7 100<br>ID = 2.9 A VGS = 0 V<br>VGS = 4.5 V<br>1.5<br>1.3 TJ = 100 ° C<br>10<br>1.1<br>0.9<br>0.7 1<br>−50 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>) � ) �<br>DRAIN−TO−SOURCE RESISTANCE ( DRAIN−TO−SOURCE RESISTANCE (<br>DS(on), DS(on),<br>R R<br>DRAIN−TO−SOURCE , LEAKAGE (nA)<br>IDSS<br>DS(on),<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br> **Figure 5. On−Resistance Variation with Temperature** **Figure 6. Drain−to−Source Leakage Current vs. Voltage** **http://onsemi.com** **4** **NTHD3100C** ## **TYPICAL N−CHANNEL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) **==> picture [492 x 392] intentionally omitted <==** **----- Start of picture text -----**<br> 400 5 15<br>CISS VDS = 0 V VGS = 0 V TJ = 25 ° C QG<br>4 12<br>300<br>VDS VGS<br>CRSS 3 9<br>200 QGS QGD<br>2 6<br>100<br>COSS 1 ID = 2.9 A 3<br>TJ = 25 ° C<br>0 0 0<br>10 5 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3<br>VGS VDS Qg, TOTAL GATE CHARGE (nC)<br>GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 8. Gate−to−Source and<br>Figure 7. Capacitance Variation Drain−to−Source Voltage vs. Total Charge<br>100 5<br>VDS = 10 V VGS = 0 V<br>ID = 2.9 A TJ = 25 ° C<br>VGS = 4.5 V 4<br>3<br>10 tr<br>td(off)<br>td(on) 2<br>1<br>tf<br>1 0<br>1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>RG, GATE RESISTANCE (OHMS) VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>GATE−TO−SOURCE VOLTAGE (VOLTS) DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>GS, DS,<br>V V<br>t, TIME (ns)<br>, SOURCE CURRENT (AMPS)<br>IS<br>**----- End of picture text -----**<br> **Figure 9. Resistive Switching Time Variation vs. Gate Resistance** **Figure 10. Diode Forward Voltage vs. Current** **http://onsemi.com** **5** **NTHD3100C** ## **TYPICAL P−CHANNEL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) **==> picture [234 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 9<br>VGS = −5 V to −3.6 V TJ = 25 ° C<br>8 VGS = −3 V<br>−2.4 V<br>−2.6 V<br>7<br>6<br>−2.2 V<br>5<br>4<br>−2 V<br>3<br>2 −1.8 V<br>1 −1.6 V<br>−1.4 V<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>DRAIN CURRENT (AMPS)<br>D,<br>−I<br>**----- End of picture text -----**<br> **Figure 11. On−Region Characteristics** **==> picture [231 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 9<br>VDS ≥ −10 V<br>8<br>7<br>6<br>5<br>4<br>3<br>2 TC = −55 ° C<br>1 25 ° C 100 ° C<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5<br>−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)<br>DRAIN CURRENT (AMPS)<br>D,<br>−I<br>**----- End of picture text -----**<br> **Figure 12. Transfer Characteristics** **==> picture [488 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 0.2 0.2<br>ITDJ = −3.2 A = 25 ° C TJ = 25 ° C<br>0.175 0.175<br>0.15 0.15<br>VGS = −2.5 V<br>0.125 0.125<br>0.1 0.1<br>0.075 0.075 VGS = −4.5 V<br>0.05 0.05<br>1 2 3 4 5 6 2 3 4 5 6 7 8<br>−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) −ID, DRAIN CURRENT (AMPS)<br>) � ) �<br>DRAIN−TO−SOURCE RESISTANCE ( DRAIN−TO−SOURCE RESISTANCE (<br>DS(on), DS(on),<br>R R<br>**----- End of picture text -----**<br> **Figure 13. On−Resistance vs. Gate−to−Source Voltage** **Figure 14. On−Resistance vs. Drain Current and Gate Voltage** **==> picture [490 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 1.4 1000<br>ID = −3.2 A VGS = 0 V<br>1.3 VGS = −4.5 V<br>1.2 TJ = 100 ° C<br>1.1<br>100<br>1<br>0.9<br>0.8<br>0.7 10<br>−50 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20<br>−TJ, JUNCTION TEMPERATURE ( ° C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>, LEAKAGE (A)<br>DRAIN−TO−SOURCE<br>DSS<br>−I<br>DS(on),<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br> **Figure 15. On−Resistance Variation with Temperature** **Figure 16. Drain−to−Source Leakage Current vs. Voltage** **http://onsemi.com** **6** **NTHD3100C** ## **TYPICAL P−CHANNEL PERFORMANCE CURVES** ## (TJ = 25 ° C unless otherwise noted) **==> picture [489 x 380] intentionally omitted <==** **----- Start of picture text -----**<br> 1500 5 10<br>VGS = 0 V TJ = 25 ° C QT<br>Ciss<br>1200 4 −VDS 8<br>−VGS<br>900 3 6<br>VDS = 0 V<br>Qgs Qgd<br>600 Crss 2 4<br>300 1 2<br>Coss ID = −3.2 A<br>TJ = 25 ° C<br>0 0 0<br>5 0 5 10 15 20 0 2 4 6 8<br>−VGS −VDS<br>Qg, TOTAL GATE CHARGE (nC)<br>GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 18. Gate−to−Source and<br>Figure 17. Capacitance Variation Drain−to−Source Voltage vs. Total Charge<br>1000<br>5<br>VDS = −10 V VGS = 0 V<br>ID = −3.2 A TJ = 25 ° C<br>VGS = −4.5 V 4<br>100 td(off)<br>tf 3<br>tr<br>10 td(on) 2<br>1<br>1 0<br>1 10 100 0.3 0.6 0.9 1.2<br>RG, GATE RESISTANCE (OHMS)G, GATE RESISTANCE (OHMS), GATE RESISTANCE (OHMS) −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>GATE−TO−SOURCE VOLTAGE (V) DRAIN−TO−SOURCE VOLTAGE (V)<br>GS, DS,<br>−V −V<br>t, TIME (ns)<br>, SOURCE CURRENT (AMPS)<br>S<br>−I<br>**----- End of picture text -----**<br> **==> picture [122 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> RG, GATE RESISTANCE (OHMS)G, GATE RESISTANCE (OHMS), GATE RESISTANCE (OHMS)<br>**----- End of picture text -----**<br> **==> picture [195 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 19. Resistive Switching Time Variation<br>vs. Gate Resistance<br>**----- End of picture text -----**<br> **Figure 20. Diode Forward Voltage vs. Current** ## **DEVICE ORDERING INFORMATION** |**DEVICE ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**†| |NTHD3100CT1|ChipFET|3000 / Tape & Reel| |NTHD3100CT1G|ChipFET<br>(Pb−Free)|3000 / Tape & Reel| |NTHD3100CT3|ChipFET|10000 / Tape & Reel| |NTHD3100CT3G|ChipFET<br>(Pb−Free)|10000 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **http://onsemi.com 7** **NTHD3100C** ## **PACKAGE DIMENSIONS** **==> picture [488 x 468] intentionally omitted <==** **----- Start of picture text -----**<br> ChipFET<br>CASE 1206A−03<br>ISSUE G<br>D NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: MILLIMETER.<br>8 7 6 5 L 3.4. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL<br>5 6 7 8 AND VERTICAL SHALL NOT EXCEED 0.08 MM.<br>it HE en E Git e i 4 3 2 1 5.6. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD<br>1 2 3 4 SURFACE.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>e1 b c A 1.00 1.05 1.10 0.039 0.041 0.043<br>e STYLE 2: b 0.25 0.30 0.35 0.010 0.012 0.014<br>PIN 1. SOURCE 1 c 0.10 0.15 0.20 0.004 0.006 0.008<br> 2. GATE 1 D 2.95 3.05 3.10 0.116 0.120 0.122<br> 3. SOURCE 2 E 1.55 1.65 1.70 0.061 0.065 0.067<br> 4. GATE 2 e 0.65 BSC 0.025 BSC<br> 5. DRAIN 2 e1 0.55 BSC 0.022 BSC<br> 6. DRAIN 2 L 0.28 0.35 0.42 0.011 0.014 0.017<br>A 7. DRAIN 1 H E 1.80 1.90 2.00 0.071 0.075 0.079<br> 8. DRAIN 1 5° NOM 5° NOM<br>— 0.05 (0.002)<br>SOLDERING FOOTPRINT*<br>2.032<br>0.08<br>0.635 [- + 1.092<br>0.025 0.043<br>0.178<br>0.007<br>el<br>0.457<br>0.018<br>0.254<br>aL<br>0.010<br>0.66<br>fa 0.026<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br> ## ChipFET is a trademark of Vishay Siliconix. **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **ON Semiconductor Website** : http://onsemi.com **N. American Technical Support** : 800−282−9855 Toll Free USA/Canada ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA **Order Literature** : http://www.onsemi.com/litorder **Phone** : 480−829−7710 or 800−344−3860 Toll Free USA/Canada **Japan** : ON Semiconductor, Japan Customer Focus Center **Fax** : 480−829−7709 or 800−344−3867 Toll Free USA/Canada 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 For additional information, please contact your **Email** : orderlit@onsemi.com **Phone** : 81−3−5773−3850 local Sales Representative. **http://onsemi.com** **NTHD3100C/D** **8**
Updated at June 9, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →