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NTHD3100CT1G
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 3.9 A, 3.9 A, 0.064 ohm
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Complement; Continuous Drain Current Id:-3.9A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.064ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: ChipFET
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.1W
- Power Dissipation P Channel: 1.1W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 3.9A
- Continuous Drain Current Id P Channel: 3.9A
- Drain Source On State Resistance N Channel: 0.064ohm
- Drain Source On State Resistance P Channel: 0.064ohm
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.258 € |
| Current stock | 765 |
| Lead time | 7 days |
Datasheet
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Updated at February 27, 2026