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NTGD4167CT1G
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 2.6 A, 2.6 A, 0.052 ohm
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.052ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: TSOP
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 900mW
- Power Dissipation P Channel: 900mW
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 2.6A
- Continuous Drain Current Id P Channel: 2.6A
- Drain Source On State Resistance N Channel: 0.052ohm
- Drain Source On State Resistance P Channel: 0.052ohm
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.146 € |
| Current stock | 2893 |
| Lead time | 7 days |
Datasheet
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Updated at February 27, 2026