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NTGD4167CT1G
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 2.6 A, 2.6 A, 0.052 ohm
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- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.052ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: TSOP
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 900mW
- Power Dissipation P Channel: 900mW
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 2.6A
- Continuous Drain Current Id P Channel: 2.6A
- Drain Source On State Resistance N Channel: 0.052ohm
- Drain Source On State Resistance P Channel: 0.052ohm
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.184 € |
| Current stock | 50+ |
| Lead time | 30 days |
Datasheet
## NTGD4167C MOSFET – POWER, Dual, Complementary, TSOP-6 ~~——~~ 30 V, +2.9/-2.2 A ## **Features** - Complementary N−Channel and P−Channel MOSFET - Small Size (3 x 3 mm) Dual TSOP−6 Package - Leading Edge Trench Technology for Low On Resistance - Reduced Gate Charge to Improve Switching Response - Independently Connected Devices to Provide Design Flexibility - This is a Pb−Free Device ## **Applications** ## **http://onsemi.com** |~~a~~|~~ee~~|~~ee~~| |---|---|---| |**V(BR)DSS**<br>~~a~~|**RDS(on) MAX**<br>~~ee~~|**ID MAX**(Note 1)<br>~~ee~~| |N−Ch<br>30 V<br>~~a~~|90 m @ 4.5 V<br>~~ee~~|2.6 A<br>~~ee~~| ||125 m @ 2.5 V|2.2 A| |P−Ch<br>−30 V<br>~~———~~|170 m @ −4.5 V<br>~~———~~|−1.9 A<br>~~———~~| ||300 m @ −2.5 V<br>~~———~~|−1.0 A<br>~~———~~| - DC−DC Conversion Circuits - Load/Power Switching with Level Shift **==> picture [188 x 379] intentionally omitted <==** **----- Start of picture text -----**<br> D1 D2<br>G1 G2<br>S1 S2<br>N−CHANNEL MOSFET P−CHANNEL MOSFET<br>MARKING<br>DIAGRAM<br>1<br>TSOP−6 © o TA M on<br>CASE 318G<br>STYLE 13<br>1<br>TA = Specific Device Code<br>M = Date Code<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>a<br>PIN CONNECTION<br>G1 1 6 D1<br>S2 2 5 S1<br>G2 3 4 D2<br>(Top View)<br>**----- End of picture text -----**<br> **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) |**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|C unless otherwise noted)|C unless otherwise noted)|| |---|---|---|---|---|---| |**Parameter**|||**Symbol**|**Value**|**Unit**| |Drain−to−Source Voltage|||VDSS|30|V| |Gate−to−Source Voltage<br>(N−Ch & P−Ch)<br>~~Ee~~|||VGS<br>~~et~~|±12<br>~~et~~|V<br>~~et~~| |**N−Channel**<br>Continuous Drain<br>Current (Note 1)<br>~~Ee~~<br>~~PpET~~|Steady<br>State<br>~~Ee~~|TA= 25°C<br>TA= 85°C<br>~~Ee~~|ID<br> ~~et~~<br>~~TEy)~~|2.6<br>1.9<br>~~et~~|A<br>~~et~~<br>~~Ey)~~| ||t ≤5 s<br>~~Ee~~<br>~~ET~~|TA= 25°C<br>~~Ee ~~<br>~~ETT~~||2.9<br>~~et~~<br>~~Ey)~~|| |**P−Channel**<br>Continuous Drain<br>Current (Note 1)<br>~~PpET~~|Steady<br>State<br>~~ET~~|TA= 25°C<br>TA= 85°C<br>~~ETT~~|ID<br>~~TEy)~~|−1.9<br>−1.4<br>~~Ey)~~|A<br>~~Ey)~~| ||t ≤5 s<br>~~ET~~|TA= 25°C<br>~~ETT~~||−2.2<br>~~Ey)~~|| |Power Dissipation<br>(Note 1)<br>~~Pp ET~~<br>~~To~~|Steady State<br>~~ET~~<br>~~To~~|TA= 25°C<br>~~ETT~~<br>~~To~~|PD<br>~~T Ey)~~<br>~~To~~|0.9<br>~~Ey)~~<br>~~To~~|W<br>~~Ey)~~<br>~~To~~| ||t ≤5 s<br>~~To~~|||1.1<br>~~To~~|| |Pulsed Drain<br>Current<br>~~SF~~|N−Ch<br>~~SF~~|tp= 10 s<br>~~SF~~|IDM<br>~~SF~~<br>~~|~~|8.6<br>~~SF~~|A<br>~~SF~~<br>~~|~~| ||P−Ch<br>~~SF~~|||−6.3<br>~~SF~~<br>~~||~~|| |Operating Junction and Storage Temperature<br>~~-________|~~|||TJ, TSTG<br>~~-________|~~<br>~~|~~|−55 to<br>150<br>~~-________|~~<br>~~||~~|°C<br>~~-________|~~<br>~~|~~| |Source Current (Body Diode)<br>~~-________|~~|||IS<br>~~-________|~~<br>~~|~~|±0.9<br>~~-________|~~<br>~~||~~|A<br>~~-________|~~<br>~~|~~| |Lead Temperature for Soldering Purposes<br>(1/8″from case for 10 s)<br>~~-________|~~|||TL<br>~~-________|~~<br>~~|~~|260<br>~~-________|~~<br>~~| |~~|°C<br>~~-________|~~<br>~~|~~| ## **THERMAL RESISTANCE RATINGS** |**THERMAL RESISTANCE RATINGS**|||| |---|---|---|---| |**Parameter**|**Symbol**|**Value**|**Unit**| |Junction−to−Ambient – Steady State (Note 1)|R JA|140|°C/W| |Junction−to−Ambient – t≤5 s (Note 1)|R JA|110|°C/W| Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq - [1 oz] including traces). ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2008 **May, 2019 − Rev. 1** **NTGD4167C/D** ## **NTGD4167C** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTIC**|**S **(TJ= 25°C|unless|otherwise noted)|otherwise noted)||||| |---|---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**N/P**|**Test Conditions**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|N|VGS= 0 V|ID= 250�A|30|||V| |||P||ID= −250�A|−30|||| |Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ|N||||21.4||mV/°C| |||P||||22.2||| |Zero Gate Voltage Drain Current|IDSS|N|VGS= 0 V, VDS= 24 V|TJ= 25°C|||1.0|�A| |||P|VGS= 0 V, VDS= −24 V||||−1.0|| |||N|VGS= 0 V, VDS= 24 V|TJ= 85°C|||10|| |||P|VGS= 0 V, VDS= −24 V||||−10|| |Gate−to−Source Leakage Current|IGSS|N|VDS= 0 V, VGS=|±12 V|||±100|nA| |||P|VDS= 0 V, VGS=|±12 V|||±100|| |**ON CHARACTERISTICS**(Note 2)||||||||| |Gate Threshold Voltage|VGS(TH)|N|VGS= VDS|ID= 250�A|0.5|0.9|1.5|V| |||P||ID= −250�A|−0.5|−1.1|−1.5|| |Drain−to−Source On Resistance|RDS(on)|N|VGS= 4.5 V , ID=|2.6 A||52|90|m�| ||||VGS= 2.5 V , ID=|2.2 A||67|125|| |||P|VGS= −4.5 V , ID=|−1.9 A||130|170|| ||||VGS= −2.5 V, ID=|−1.0 A||202|300|| |Forward Transconductance|gFS|N|VDS= 15 V, ID=|2.6 A||2.6||S| |||P|VDS= −15 V , ID=|−1.9 A||2.6||| |**CHARGES AND CAPACITANCES**||||||||| |Input Capacitance|CISS|N|f = 1 MHz, VGS= 0 V|VDS= 15 V||295||pF| |Output Capacitance|COSS|||||48||| |Reverse Transfer Capacitance|CRSS|||||27||| |Input Capacitance|CISS|P||VDS= −15 V||419||| |Output Capacitance|COSS|||||51||| |Reverse Transfer Capacitance|CRSS|||||26||| |Total Gate Charge|QG(TOT)|N|VGS= 4.5 V, VDS= 15|V, ID= 2.0 A||3.7|5.5|nC| |Threshold Gate Charge|QG(TH)|||||0.6||| |Gate−to−Source Gate Charge|QGS|||||0.9||| |Gate−to−Drain “Miller” Charge|QGD|||||0.8||| |Total Gate Charge|QG(TOT)|P|VGS= −4.5 V, VDS= −15 V, ID= −2.0 A|||3.9|6.0|| |Threshold Gate Charge|QG(TH)|||||0.6||| |Gate−to−Source Gate Charge|QGS|||||1.0||| |Gate−to−Drain “Miller” Charge|QGD|||||1.0||| |**SWITCHING CHARACTERISTICS**(Note 3)||||||||| |Turn−On Delay Time|td(ON)|N|VGS= 4.5 V, VDD= 15 V,<br>ID= 1.0 A, RG= 6.0�|||7.0||ns| |Rise Time|tr|||||4.0||| |Turn−Off Delay Time|td(OFF)|||||14||| |Fall Time|tf|||||2.0||| |Turn−On Delay Time|td(ON)|P|VGS= −4.5 V, VDD= −15 V,<br>ID= −1.0 A, RG= 6.0�|||8.0||| |Rise Time|tr|||||8.0||| |Turn−Off Delay Time|td(OFF)|||||22||| |Fall Time|tf|||||8.0||| 2. Pulse Test: pulse width � 300 � s, duty cycle � 2%. **http://onsemi.com** **2** **NTGD4167C** 3. Switching characteristics are independent of operating junction temperatures. **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTIC**|**S **(TJ= 25°C|unless|otherwise noted)|otherwise noted)||||| |---|---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**N/P**|**Test Conditions**||**Min**|**Typ**|**Max**|**Unit**| |**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||| |Forward Diode Voltage|VSD|N|VGS= 0 V, TJ= 25°C|IS= 0.9 A||0.7|1.2|V| |||P||IS= −0.9 A||−0.8|−1.2|| |Reverse Recovery Time|tRR|N|VGS= 0 V,<br>dIS/ dt = 100 A/�s, IS= 0.9 A|||8.0||ns| |Charge Time|ta|||||5.0||| |Discharge Time|tb|||||3.0||| |Reverse Recovery Charge|QRR|||||3.0||nC| |Reverse Recovery Time|tRR|P|VGS= 0 V,<br>dIS/ dt = 100 A/�s, IS= −0.9 A|||12||ns| |Charge Time|ta|||||10||| |Discharge Time|tb|||||2.0||| |Reverse Recovery Charge|QRR|||||7.0||nC| **http://onsemi.com** **3** **NTGD4167C** ## **N−CHANNEL TYPICAL CHARACTERISTICS** **==> picture [494 x 581] intentionally omitted <==** **----- Start of picture text -----**<br> 9.0 9.0<br>VGS = 4.5 V TJ = 25 ° C<br>8.0 3.5 V 8.0 VDS = 5 V<br>7.0 2.5 V 2.0 V 7.0<br>6.0 6.0<br>5.0 5.0<br>4.0 4.0<br>3.0 3.0 −55 ° C<br>2.0 1.5 V 2.0 125 ° C 25 ° C<br>1.0 1.0<br>0 0.0<br>0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.75 1 1.25 1.5 1.75 2 2.25 2.5<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>0.20 0.10<br>0.18 TJ = 25 ° C TJ = 25 ° C<br>0.09<br>0.16<br>0.08<br>0.14 VGS = 2.5 V<br>0.07<br>0.12<br>0.10 ID = 2.6 A 0.06<br>V GS = 4.5 V<br>0.08<br>0.05<br>0.06<br>0.04<br>0.04<br>0.03<br>0.02<br>0 0.02<br>1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0<br>VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Region vs. Gate−To−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Temperature<br>1.6 400<br>1.5 ID = 2.6 A TJ = 25 ° C<br>1.4 VGS = 4.5 V 350 CISS Vf = 1 MHzGS = 0 V<br>300<br>1.3<br>250<br>1.2<br>1.1 200<br>1.0<br>150<br>0.9<br>100<br>0.8 COSS<br>50<br>0.7<br>CRSS<br>0.6 0<br>−50 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 30<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>, DRAIN CURRENT (A)ID ID<br>) �<br>) �<br>TANCE (<br>, DRAIN−TO−SOURCE RESIS-<br>DS(on)<br>R , DRAIN−TO−SOURCE RESISTANCE (<br>DS(on)<br>R<br>C, CAPACITANCE (pF)<br>, DRAIN−TO−SOURCE RESISTANCE<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Figure 5. On−Resistance Variation with Temperature** **Figure 6. Capacitance Variation** **http://onsemi.com** **4** **NTGD4167C** **==> picture [493 x 401] intentionally omitted <==** **----- Start of picture text -----**<br> 5 16 10<br>QT<br>14<br>4<br>12<br>VDS<br>10<br>3<br>VGS<br>QGD 8 1.0 TJ = 150 ° C<br>2 Q GS 6 TJ = 25 ° C<br>ID = 2.0 A 4<br>1 TJ = 25 ° C<br>VDS = 15 V 2<br>0 0 0.1<br>0 1 2 3 4 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>QG, TOTAL GATE CHARGE (nC) VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 7. Gate−to−Source and Figure 8. Diode Forward Voltage versus<br>Drain−to−Source Voltage versus Total Charge Current<br>1.2 40<br>1.1 I D = 250 � A<br>1.0 30<br>0.9<br>0.8 20<br>0.7<br>0.6 10<br>0.5<br>0.4 0<br>−50 −25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000<br>TJ, JUNCTION TEMPERATURE ( ° C) SINGLE PULSE TIME (s)<br>Figure 9. Threshold Voltage Figure 10. Single Pulse Maximum Power<br>Dissipation<br>V<br>DS<br>, SOURCE CURRENT (A)<br>IS<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V , DRAIN−TO−SOURCE VOLTAGE (V)<br> (V)<br>GS(th)<br>V<br>POWER (W)<br>**----- End of picture text -----**<br> **==> picture [239 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>VGS = 12 V<br>Single Pulse<br>10 TA = 25 ° C<br>100 � s<br>1 1 ms<br>10 ms<br>0.1<br>RDS(on) Limit<br>Thermal Limit<br>dc<br>Package Limit<br>0.01<br>0.1 1 10 100<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> **Figure 11. Maximum Rated Forward Biased Safe Operating Area** **http://onsemi.com** **5** **NTGD4167C** **==> picture [493 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>0.01 Single Pulse<br>0.01<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, TIME (s)<br>MAL RESPONSE NORMALIZED<br>R(t), EFFECTIVE TRANSIENT THER-<br>**----- End of picture text -----**<br> **Figure 12. FET Thermal Response** **http://onsemi.com** **6** **NTGD4167C** ## **P−CHANNEL TYPICAL CHARACTERISTICS** **==> picture [496 x 586] intentionally omitted <==** **----- Start of picture text -----**<br> 7.0 7.0<br>VDS = −5 V<br>6.0 VGS = −5.0 V to −3.5 V 6.0<br>5.0 5.0<br>−3.0 V<br>−2.5 V<br>4.0 4.0<br>3.0 3.0<br>2.0 2.0<br>−2.0 V<br>1.0 1.0 125 ° C 25 ° C<br>−55 ° C<br>−1.5 V<br>0 0<br>0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 13. On−Region Characteristics Figure 14. Transfer Characteristics<br>0.5 0.5<br>0.45 TJ = 25 ° C 0.45 TJ = 25 ° C<br>0.4 0.4<br>0.35 0.35<br>VGS = −2.5 V<br>0.3 0.3<br>0.25 0.25<br>0.2 ID = −1.9 A 0.2<br>0.15 0.15 VGS = −4.5 V<br>0.1 0.1<br>0.05 0.05<br>0 0<br>1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0<br>−VGS, GATE VOLTAGE (V) −ID, DRAIN CURRENT (A)<br>Figure 15. On−Region vs. Gate−To−Source Figure 16. On−Resistance vs. Drain Current<br>Voltage and Temperature<br>1.6 550<br>1.51.4 VIDGS = −1.9 A = −4.5 V 500450 CISS Tf = 1 MHzVJGS = 25 = 0 V ° C<br>400<br>1.3<br>350<br>1.2<br>300<br>1.1<br>250<br>1.0<br>200<br>0.9<br>150<br>0.8 100<br>COSS<br>0.7 50 CRSS<br>0.6 0<br>−50 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 30<br>TJ, JUNCTION TEMPERATURE ( ° C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>, DRAIN CURRENT (A) D<br>D −I<br>−I<br>) �<br>) �<br>TANCE (<br>, DRAIN−TO−SOURCE RESIS-<br>, DRAIN−TO−SOURCE RESISTANCE (<br>DS(on)<br>R<br>DS(on)<br>R<br>C, CAPACITANCE (pF)<br>, DRAIN−TO−SOURCE RESISTANCE<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [172 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 17. On−Resistance Variation with<br>Temperature<br>**----- End of picture text -----**<br> **Figure 18. Capacitance Variation** **http://onsemi.com** **7** **NTGD4167C** **==> picture [256 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 5 16<br>Q T<br>14<br>4<br>12<br>−VGS<br>−VDS<br>10<br>3<br>8<br>Q GS Q GD<br>2<br>6<br>ID = −2.0 A<br>1 TJ = 25 ° C 4<br>VDS = −15 V 2<br>0 0<br>0 1 2 3 4<br>QG, TOTAL GATE CHARGE (nC)<br>−V<br>DS<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>−V<br>, DRAIN−TO−SOURCE VOLTAGE (V)<br>**----- End of picture text -----**<br> **Figure 19. Gate−to−Source and** **Drain−to−Source Voltage versus Total Charge** **==> picture [490 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 10 1.4<br>1.3 ID = −250 � A<br>TJ = 150 ° C 1.2<br>1.1<br>1.0<br>1.0 TJ = 25 ° C 0.9<br>0.8<br>0.7<br>0.6<br>0.5<br>0.1 0.4<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 −50 −25 0 25 50 75 100 125 150<br>−VSD, SOURCE−TO−DRAIN VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( ° C)<br> (V)<br>GS(th)<br>−V<br>, SOURCE CURRENT (A)<br>S<br>−I<br>**----- End of picture text -----**<br> **Figure 20. Diode Forward Voltage versus Current** **Figure 21. Threshold Voltage** **==> picture [492 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 40 100<br>VGS = −12 V<br>Single Pulse<br>TA = 25 ° C<br>30 10<br>100 � s<br>20 1 1 ms<br>10 ms<br>10 0.1<br>RDS(on) Limit<br>Thermal Limit<br>dc<br>Package Limit<br>0 0.01<br>0.001 0.01 0.1 1 10 100 1000 0.1 1 10 100<br>SINGLE PULSE TIME (s) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 22. Single Pulse Maximum Power Figure 23. Maximum Rated Forward Biased<br>Dissipation Safe Operating Area<br>POWER (W)<br>, DRAIN CURRENT (A)<br>D<br>−I<br>**----- End of picture text -----**<br> **http://onsemi.com** **8** **NTGD4167C** **==> picture [493 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>0.01 Single Pulse<br>0.01<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, TIME (s)<br>MAL RESPONSE NORMALIZED<br>R(t), EFFECTIVE TRANSIENT THER-<br>**----- End of picture text -----**<br> **Figure 24. FET Thermal Response** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**†| |NTGD4167CT1G|TSOP6<br>(Pb−Free)|3000 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **http://onsemi.com** **9** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [479 x 542] intentionally omitted <==** **----- Start of picture text -----**<br> TSOP−6<br>CASE 318G−02<br>gd<br>ISSUE V<br>1<br>DATE 12 JUN 2012<br>SCALE 2:1<br>D NOTES:1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>H 2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM<br>LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.<br>6 5 4 L2 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,<br>GAUGE PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR<br>E1 ÉÉ E PLANE GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D<br>AND E1 ARE DETERMINED AT DATUM H.<br>ÉÉ 1 2 3 L 5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE.<br>NOTE 5 b M C PLANESEATING DIM MIN MILLIMETERSNOM MAX<br>DETAIL Z A 0.90 1.00 1.10<br>i e A1 0.01 0.06 0.10<br>b 0.25 0.38 0.50<br>c 0.10 0.18 0.26<br>D 2.90 3.00 3.10<br>A c E 2.50 2.75 3.00<br>0.05 E1 1.30 1.50 1.70<br>e 0.85 0.95 1.05<br>A1 L 0.20 0.40 0.60<br>DETAIL Z L2M 0° 0.25 BSC− 1 0°<br>STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: STYLE 6:<br>PIN 1. DRAIN PIN 1. EMITTER 2 PIN 1. ENABLE PIN 1. N/C PIN 1. EMITTER 2 PIN 1. COLLECTOR<br>2. DRAIN 2. BASE 1 2. N/C 2. V in 2. BASE 2 2. COLLECTOR<br>3. GATE 3. COLLECTOR 1 3. R BOOST 3. NOT USED 3. COLLECTOR 1 3. BASE<br>4. SOURCE 4. EMITTER 1 4. Vz 4. GROUND 4. EMITTER 1 4. EMITTER<br>5. DRAIN 5. BASE 2 5. V in 5. ENABLE 5. BASE 1 5. COLLECTOR<br>6. DRAIN 6. COLLECTOR 2 6. V out 6. LOAD 6. COLLECTOR 2 6. COLLECTOR<br>STYLE 7: STYLE 8: STYLE 9: STYLE 10: STYLE 11: STYLE 12:<br>PIN 1. COLLECTOR PIN 1. Vbus PIN 1. LOW VOLTAGE GATE PIN 1. D(OUT)+ PIN 1. SOURCE 1 PIN 1. I/O<br>2. COLLECTOR 2. D(in) 2. DRAIN 2. GND 2. DRAIN 2 2. GROUND<br>3. BASE 3. D(in)+ 3. SOURCE 3. D(OUT)− 3. DRAIN 2 3. I/O<br>4. N/C 4. D(out)+ 4. DRAIN 4. D(IN)− 4. SOURCE 2 4. I/O<br>5. COLLECTOR 5. D(out) 5. DRAIN 5. VBUS 5. GATE 1 5. VCC<br>6. EMITTER 6. GND 6. HIGH VOLTAGE GATE 6. D(IN)+ 6. DRAIN 1/GATE 2 6. I/O<br>STYLE 13: STYLE 14: STYLE 15: STYLE 16: STYLE 17:<br>PIN 1. GATE 1 PIN 1. ANODE PIN 1. ANODE PIN 1. ANODE/CATHODE PIN 1. EMITTER<br>2. SOURCE 2 2. SOURCE 2. SOURCE 2. BASE 2. BASE<br>3. GATE 2 3. GATE 3. GATE 3. EMITTER 3. ANODE/CATHODE<br>4. DRAIN 2 4. CATHODE/DRAIN 4. DRAIN 4. COLLECTOR 4. ANODE<br>5. SOURCE 1 5. CATHODE/DRAIN 5. N/C 5. ANODE 5. CATHODE<br>6. DRAIN 1 6. CATHODE/DRAIN 6. CATHODE 6. CATHODE 6. COLLECTOR<br>GENERIC<br>RECOMMENDED<br>MARKING DIAGRAM*<br>SOLDERING FOOTPRINT*<br>6X<br>0.60<br>XXXAYW XXX M<br>roo 1 1<br>3.20 6X<br>0.95 IC STANDARD<br>XXX = Specific Device Code XXX = Specific Device Code<br>A =Assembly Location M = Date Code<br>Loom Y = Year | = Pb−Free Package<br>0.95 W = Work Week<br>PITCH<br>= Pb−Free Package<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering *This information is generic. Please refer to device data sheet details, please download the ON Semiconductor Soldering and for actual part marking. Pb−Free indicator, “G” or microdot “ Mounting Techniques Reference Manual, SOLDERRM/D. ”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB14888C** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: TSOP−6 PAGE 1 OF 1** ~~Be~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at June 9, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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