Illustrative purposes only
NTGD1100LT1G
Dual MOSFET, Complementary N and P Channel, 8 V, 0.04 ohm, TSOP, Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Transistor Mounting: Surface Mount
- Transistor Polarity: Complementary N and P Channel
- Power Dissipation Pd: 830mW
- Rds(on) Test Voltage: 4.5V
- On Resistance Rds(on): 0.04ohm
- Transistor Case Style: TSOP
- Drain Source Voltage Vds: 8V
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 830mW
- Power Dissipation P Channel: 830mW
- Gate Source Threshold Voltage Max: 1.2V
- Drain Source Voltage Vds N Channel: 8V
- Drain Source Voltage Vds P Channel: 8V
- Drain Source On State Resistance N Channel: 0.04ohm
- Drain Source On State Resistance P Channel: 0.04ohm
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.337 € |
| Current stock | 4 |
| Lead time | 7 days |