NTGD1100LT1G

## **ON Semiconductor** 

## **Is Now** 

**==> picture [390 x 69] intentionally omitted <==**

**To learn more about onsemi™, please visit our website at www.onsemi.com** 

**onsemi** and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. 

## MOSFET - Power, P-Channel, Load Switch with Level-Shift, TSOP-6 8 V, 3.3 A 

## NTGD1100L 

**www.onsemi.com** 

The NTGD1100L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The P−Channel device is specifically designed as a load switch using ON Semiconductor state−of−the−art trench technology. The N−Channel, with an external resistor (R1), functions as a level−shift to drive the P−Channel. The N−Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTGD1100L operates on supply lines from 1.8 to 8.0 V and can drive loads up to 3.3 A with 8.0 V applied to both VIN and VON/OFFIN and VON/OFF and VON/OFFON/OFF 

**==> picture [192 x 61] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS RDS(on) TYP ID MAX<br>40 m  @ −4.5 V<br>8.0 V 55 m  @ −2.5 V ± 3.3 A<br>80 m  @ −1.8 V<br>=m<br>**----- End of picture text -----**<br>


**==> picture [481 x 314] intentionally omitted <==**

**----- Start of picture text -----**<br>
SIMPLIFIED SCHEMATIC<br>lines from 1.8 to 8.0 V and can drive loads up to 3.3 A with 8.0 V<br>applied to both VIN and VON/OFFIN and VON/OFF and VON/OFFON/OFF 4 2,3<br>Q2<br>Features<br>• Extremely Low RDS(on) Load Switch MOSFET 6<br>• Level Shift MOSFET is ESD Protected<br>• Low Profile, Small Footprint Package 5 Q1<br>• VIN Range 1.8 to 8.0 V<br>• ON/OFF Range 1.5 to 8.0 V<br>• 1<br>ESD Rating of 2000 V =<br>• These Devices are Pb−Free and are RoHS Compliant<br>MARKING DIAGRAM &<br>MAXIMUM RATINGS  (TJ = 25 ° C unless otherwise noted) PIN ASSIGNMENT<br>D1/G2 G1 S2<br>Rating Symbol Value Unit<br>6 5 4<br>a Se<br>Input Voltage (VDSS, P−Ch)DSS, P−Ch), P−Ch) VININ 8.0 V 1<br>ON/OFF Voltage (VGS, N−Ch)GS, N−Ch), N−Ch) VON/OFFON/OFF 8.0 V TSOP−6 TZ M<br>Continuous Load Current Steady TA = 25A = 25= 25 ° C ILL ± 3.3 A CASE 318G<br>ooeeee (Note 1) State TA = 85A = 85= 85 ° C ± 2.4 STYLE 11 a 1 2 3<br>Power Dissipation Steady TA = 25A = 25= 25 ° C PDD 0.83 W S1 D2 D2<br>ee (Note 1) State TA = 85A = 85= 85 ° C 0.43 TZ = Specific Device Code<br>a Pulsed Load CurrentOperating Junction and Storage TemperaturetpOperating Junction and Storage Temperaturetp = 10 s ITLMJ,TLMJ,LMJ,J,, −55 to ± 10 ° ACC M . = Pb−Free Package= Date Code*= Date Code*<br>TSTGSTG 150 (Note: Microdot may be in either location)<br>ee ee *Date Code orientation may vary depending<br>**----- End of picture text -----**<br>


D1/G2 G1 S2 **Rating Symbol Value Unit** 6 5 4 ~~a~~ Se Input Voltage (VDSS, P−Ch)DSS, P−Ch), P−Ch) VININ 8.0 V 1 ON/OFF Voltage (VGS, N−Ch)GS, N−Ch), N−Ch) VON/OFFON/OFF 8.0 V **TSOP−6** TZ M Continuous Load Current Steady TA = 25A = 25= 25 ° C ILL ± 3.3 A **CASE 318G** ~~ooeeee~~ (Note 1) State TA = 85A = 85= 85 ° C ± 2.4 **STYLE 11** ~~a~~ 1 2 3 Power Dissipation Steady TA = 25A = 25= 25 ° C PDD 0.83 W S1 D2 D2 ~~ee~~ (Note 1) State TA = 85A = 85= 85 ° C 0.43 TZ = Specific Device Code ~~a~~ tp = 10 s ± 10 ° M . = Pb−Free Package= Date Code*= Date Code* Pulsed Load CurrentOperating Junction and Storage TemperaturetpOperating Junction and Storage Temperaturetp ITLMJ,TLMJ,LMJ,J,, −55 to ACC TSTGSTG 150 (Note: Microdot may be in either location) ~~ee~~ Source Current (Body Diode) I ~~ee~~ S −1.0 A *Date Code orientation may vary depending ~~a~~ upon manufacturing location. ESD Rating, MIL−STD−883D HBM ESD 2.0 kV (100 pF, 1.5 k ) ~~ee~~ Lead Temperature for Soldering Purposes ~~eee~~ TL 260 ° C **ORDERING INFORMATION** (1/8 ″ from case for 10 s) **Device Package Shipping**[†] Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be NTGD1100LT1G TSOP−6 3000 / Tape & Reel assumed, damage may occur and reliability may be affected. (Pb−Free) 1. ~~ee~~ Surface−mounted on FR4 board using 1 in sq pad size ~~ee —>—~~ (Cu area = 1.127 in sq [1 oz] including traces). †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2015 **December, 2019 − Rev. 12** 

**NTGD1100L/D** 

**NTGD1100L** 

## **THERMAL RESISTANCE RATINGS** 

|**THERMAL RESISTANCE RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Max**|**Unit**|
|Junction−to−Ambient – Steady State (Note 2)|R�JA|150|°C/W|
|Junction−to−Foot – Steady State (Note 2)|R�JF|50||
|2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).||||



**ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**Characteristic**|**Symbol**|**Test Condition**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|**OFF CHARACTERISTICS**||||||||
|Q2 Drain−to−Source Breakdown Voltage|VIN|VGS2= 0 V, ID2|= −250�A|8.0|||V|
|Forward Leakage Current|IFL|VGS1= 0 V,<br>VDS1= 8.0 V|TJ= 25°C|||1.0|�A|
||||TJ= 125°C|||10||
|Q2 Gate−to−Source Leakage Current|IGSS|VDS2= 0 V, VGS2=±8.0 V||||±100|nA|
|Q2 Diode Forward On−Voltage|VSD|IS= −1.0 A, VGS2= 0 V|||−0.7|−1.0|V|
|**ON CHARACTERISTICS**||||||||
|Voltage ON/OFF|VON/OFF|||1.5||8.0|V|
|Q1 Gate Threshold Voltage|VGS1|VGS1= VDS1, ID= 50�A||0.6||1.2|V|
|Input Voltage|VIN|VGS2= VDS2, ID= 250�A||1.8||8.0|V|
|Q2 Drain−to−Source On Resistance|RDS(on)|VON/OFF= 1.5 V,<br>IL= 1.0 A|VIN= 4.5 V||40|55|m�|
||||VIN= 2.5 V||55|70||
||||VIN= 1.8 V||80|140||
|Load Current|IL|VDROP ≤0.2 V, VIN= 5.0 V,<br>VON/OFF= 1.5 V||1.0|||A|
|||VDROP ≤0.2 V, VIN= 2.5 V,<br>VON/OFF= 1.5 V||1.0||||
|||VDROP ≤0.2 V, VIN= 1.8 V,<br>VON/OFF= 1.5 V||1.0||||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

**==> picture [259 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
4 2,3<br>VIN VOUT<br>Q2<br>R1 C1<br>6 6<br>ON/OFF 5 CO LOAD<br>Q1<br>1<br>CI<br>R2<br>R2 GND<br>**----- End of picture text -----**<br>


**Figure 1. Load Switch Application** 

|**Components**|**Description**|**Values**|
|---|---|---|
|R1|Pullup Resistor|Typical 10 k�to 1.0 M�|
|R2|Optional Slew−Rate Control|Typical 0 to 100 k�|
|C0|Output Capacitance|Usually < 1.0�F|
|C1|Optional In−Rush Current Control|Typical≤1000 pF|



**www.onsemi.com** 

**2** 

**NTGD1100L** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [492 x 605] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.400 0.300<br>0.350<br>0.250<br>0.300<br>0.200<br>0.250<br>0.200 TJ = 125 ° C 0.150 TJ = 125 ° C<br>0.150 TJ = 25 ° C TJ = 25 ° C<br>0.100<br>0.100<br>0.050<br>0.050<br>0 0<br>0 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 0 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00<br>IL, (A) IL, (A)<br>Figure 2. VDROP vs. IL @ VIN = 2.5 V Figure 3. VDROP vs. IL @ VIN = 4.5 V<br>0.50 0.15<br>0.48<br>0.460.440.42 TJ = 125 ° C 0.140.13 IVLON/OFF = 1.0 A = 1.5 to 8.0 V<br>0.40 0.12<br>0.380.36 TJ = 25 ° C 0.11<br>0.34 0.10<br>0.320.30 0.09 VIN = 1.8 V<br>0.28<br>0.26 0.08<br>0.24 0.07<br>0.22<br>0.2 0 0.06<br>0.180.16 0.05 VIN = 5.0 V<br>0.14 IL = 1.0 A 0.04<br>0.120.10 VON/OFF = 1.5 to 8.0 V 0.03<br>0.08<br>0.06 0.02<br>0.04 0.01<br>0.02<br>0 0<br>0 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 −50 −25 0 25 50 75 100 125 150<br>VIN, (V) TJ, JUNCTION TEMPERATURE ( ° C)<br>Figure 4. On Resistance vs. Input Voltage Figure 5. On Resistance Variation with<br>Temperature<br>1.7<br>IL = 1.0 A<br>1.5 VON/OFF = 1.5 to 8.0 V<br>VIN = 5.0 V<br>1.3<br>1.1<br>VIN = 1.8 V<br>0.9<br>0.7<br>−50 −25 0 25 50 75 100 125 150<br>TJ, TEMPERATURE JUNCTION ( ° C)<br>, (V) , (V)<br>DROP DROP<br>V V<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (<br>DS(on) DS(on)<br>R R<br>(NORMALIZED)<br>, DRAIN−TO−SOURCE RESISTANCE<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Figure 6. Normalized On Resistance Variation with Temperature** 

**www.onsemi.com** 

**3** 

**NTGD1100L** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [488 x 388] intentionally omitted <==**

**----- Start of picture text -----**<br>
60 60<br>55 55<br>td(off)<br>50 IL = 1.0 A td(off) 50 IL = 1.0 A<br>45 VON/OFF = 1.5 V 45 VON/OFF = 3.0 V<br>40 C1 = 10  � F 40 C1 = 10  � F<br>35 C0 = 1.0  � F tf 35 C0 = 1.0  � F tf<br>30 30<br>25 25<br>20 20<br>15 tr 15<br>10 td(on) 10 tr<br>5 5<br>td(on)<br>0 0<br>0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8<br>R2 (k � ) R2 (k � )<br>Figure 7. Switching Variation R2 @ Figure 8. Switching Variation R2 @<br>VIN = 4.5 V, R1 = 20 k � VIN = 4.5 V, R1 = 20 k �<br>40 30<br>35 tf<br>25<br>30<br>25 tf tr 20 td(off)<br>20 IL = 1.0 A td(off) 15 IL = 1.0 A<br>VON/OFF = 1.5 V VON/OFF = 3.0 V<br>15 C1 = 10  � F td(on) 10 C1 = 10  � F<br>10 C0 = 1.0  � F C0 = 1.0  � F tr<br>5<br>5 td(on)<br>0 0<br>0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8<br>R2 (k � ) R2 (k � )<br>S) S)<br>� �<br>TIME ( TIME (<br>S) S)<br>� �<br>TIME ( TIME (<br>**----- End of picture text -----**<br>


**Figure 9. Switching Variation R2 @ VIN = 2.5 V, R1 = 20 k �** 

**Figure 10. Switching Variation R2 @ VIN = 2.5 V, R1 = 20 k �** 

**==> picture [494 x 207] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0<br>D = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>Single Pulse<br>0.01<br>0.01<br>1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03<br>SQUARE WAVE PULSE DURATION TIME, t (sec)<br>, EFFECTIVE TRANSIENT THERMAL RESPONSE<br>JA(t)<br>�<br>R<br>**----- End of picture text -----**<br>


**Figure 11. FET Thermal Response Normalized to R � JA at Steady State (1 inch Pad)** 

**www.onsemi.com** 

**4** 

**NTGD1100L** 

## **PACKAGE DIMENSIONS** 

**TSOP−6** CASE 318G−02 ISSUE V 

NOTES: 

**==> picture [371 x 377] intentionally omitted <==**

**----- Start of picture text -----**<br>
D 1.<br>H 2. CONTROLLING DIMENSION: MILLIMETERS.<br>3.<br>6 5 4 L2 4.<br>GAUGE<br>E1 loon y E A E , PLANE<br>AND E1 ARE DETERMINED AT DATUM H.<br>ÉÉÉ<br>1 2 3 5.<br>L<br>NOTE 5 b M C PLANESEATING DIM MIN MILLIMETERSNOM MAX<br>DETAIL Z A 0.90 1.00 1.10<br>e A1 0.01 0.06 0.10<br>b 0.25 0.38 0.50<br>c 0.10 0.18 0.26<br>D 2.90 3.00 3.10<br>A c E 2.50 2.75 3.00<br>0.05 E1 1.30 1.50 1.70<br>i === e 0.85 0.95 1.05<br>A1 L 0.20 0.40 0.60<br>== DETAIL Z L2M 0° 0.25 BSC− 1 0°<br>STYLE 11:<br>PIN 1. SOURCE 1<br>2. DRAIN 2<br>3. DRAIN 2<br>4. SOURCE 2<br>5. GATE 1<br>6. DRAIN 1/GATE 2<br>RECOMMENDED<br>SOLDERING FOOTPRINT*<br>6X<br>0.60<br>roou<br>3.20 6X<br>0.95<br>L Oa a 0.95<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 

2. CONTROLLING DIMENSION: MILLIMETERS. 

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 

4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D AND E1 ARE DETERMINED AT DATUM H. 

5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE. 

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada **ON Semiconductor Website:** www.onsemi.com Phone: 011 421 33 790 2910 

◊ 

**www.onsemi.com** 

**Europe, Middle East and Africa Technical Support:** Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative 

**5**