NSVRB751V40T1G

RB751V40T1G 

## Schottky Barrier Diode 

These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. 

## **http://onsemi.com** 

## **Features** 

- Extremely Fast Switching Speed 

- Extremely Low Forward Voltage − 0.28 Volts (Typ) @ IF = 1 mAdc 

## **40 V SCHOTTKY BARRIER DIODE** 

- Low Reverse Current 

- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

**MAXIMUM RATINGS Rating Symbol Value Unit** Peak Reverse Voltage VRM 40 V Reverse Voltage VR 30 Vdc Forward Continuous Current (DC) IF 30 mA Peak Forward Surge Current IFSM 500 mA Electrostatic Discharge ESD HBM Class: 1C MM Class: A ~~===~~ **THERMAL CHARACTERISTICS Characteristic Symbol Max Unit** ~~a~~ Total Device Dissipation FR−5 Board, PD 200 mW (Note 1) TA = 25 ° C Derate above 25 ° C 1.57 mW/ ° C ~~Pe~~ Thermal Resistance R JA 635 ° C/W Junction−to−Ambient ~~ee~~ Junction and Storage TJ, Tstg ~~eee~~ −55 to +150 ° C Temperature Range ~~a~~ 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 Minimum Pad 

1 2 CATHODE ANODE 

2 1 **SOD−323 CASE 477 STYLE 1** ~~”~~ 

**MARKING DIAGRAM** 

5E M 

5E = Specific Device Code M = Date Code = Pb−Free Package (Note: Microdot may be in either location) 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|RB751V40T1G|SOD−323<br>(Pb−Free)|3000 / Tape &<br>Reel|
|NSVRB751V40T1G|SOD−323<br>(Pb−Free)|3000 / Tape &<br>Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2014 **September, 2014 − Rev. 5** 

**RB751V40T1/D** 

**RB751V40T1G** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise note|d)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Reverse Breakdown Voltage<br>(IR= 10μA)|V(BR)R|30|−|−|Volts|
|Total Capacitance<br>(VR= 1.0 V, f = 1.0 MHz)|CT|−|2.0|2.5|pF|
|Reverse Leakage<br>(VR= 30 V)|IR|−|300|500|nAdc|
|Forward Voltage<br>(IF= 1.0 mAdc)|VF|−|0.28|0.37|Vdc|



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820 Ω<br>+10 V 2 k 0.1 μF IF<br>100 μH IF tr t p t<br>0.1 μF t rr t<br>10%<br>DUT<br>50 Ω OUTPUT 50 Ω INPUT<br>PULSE SAMPLING 90% iR(REC) = 1 mA<br>GENERATOR OSCILLOSCOPE IR<br>VR OUTPUT PULSE<br>INPUT SIGNAL (IF = IR = 10 mA; measured<br>at iR(REC) = 1 mA)<br>**----- End of picture text -----**<br>


Notes: 1. A 2.0 k Ω variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr 

**Figure 1. Recovery Time Equivalent Test Circuit** 

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**2** 

**RB751V40T1G** 

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10 1000<br>100 TA = 150°C<br>125 ° C<br>10<br>85°C<br>1.0 1.0<br>0.1<br>1�50°C 25°C<br>0.01<br>1�25°C 85°C 25°C -�40°C -�55°C<br>0.1 0.001<br>0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0 5 10 15 20 25 30 35<br>VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 2. Typical Forward Voltage Figure 3. Reverse Current versus Reverse<br>Voltage<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0<br>0 2.0 4.0 6.0 8.0 10 12 14 16 18<br>VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>μ<br>IR, REVERSE CURRENT (<br>IF, FORWARD CURRENT (mA)<br>CT, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 4. Typical Capacitance** 

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**3** 

**RB751V40T1G** 

## **PACKAGE DIMENSIONS** 

**SOD−323** CASE 477−02 ISSUE H 

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HE<br>D<br>b 1 2 E<br>aa<br>A3<br>A<br>L<br>C NOTE 5 A1<br>NOTE 3<br>**----- End of picture text -----**<br>


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NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. LEAD THICKNESS SPECIFIED PER L/F DRAWING<br>WITH SOLDER PLATING.<br>4. DIMENSIONS A AND B DO NOT INCLUDE MOLD<br>FLASH, PROTRUSIONS OR GATE BURRS.<br>5. DIMENSION L IS MEASURED FROM END OF RADIUS.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 0.80 0.90 1.00 0.031 0.035 0.040<br>A1 0.00 0.05 0.10 0.000 0.002 0.004<br>A3 0.15 REF 0.006 REF<br>b 0.25 0.32 0.4 0.010 0.012 0.016<br>C 0.089 0.12 0.177 0.003 0.005 0.007<br>D 1.60 1.70 1.80 0.062 0.066 0.070<br>E 1.15 1.25 1.35 0.045 0.049 0.053<br>L 0.08 0.003<br>HE 2.30 2.50 2.70 0.090 0.098 0.105<br>STYLE 1:<br>PIN 1. CATHODE<br> 2. ANODE<br>**----- End of picture text -----**<br>


## **SOLDERING FOOTPRINT*** 

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0.63<br>0.025 ae<br>0.83<br>0.033<br>1.60<br>as<br>0.063<br>2.85<br>0.112<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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## **PUBLICATION ORDERING INFORMATION** 

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