NSVMMBTH10LT1G

Bipolar - RF Transistor, NPN, 25 V, 650 MHz, 300 mW, 999 A, SOT-23

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:25V; Transition Frequency ft:650MHz; Power Dissipation Pd:300mW; DC Collector Current:-; DC Current Gain hFE:60hFE; Tr
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Product Range: -
Qualification: AEC-Q101
Power Dissipation: 300mW
Transistor Mounting: Surface Mount
Transistor Polarity: NPN
Transition Frequency: 650MHz
Transistor Case Style: SOT-23
DC Current Gain hFE Min: 60hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 999A
Collector Emitter Voltage Max: 25V

Delivery and price
Units per pack	3000
Price	0.067 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 13, 2026