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NSVMMBT5401WT1G

Bipolar (BJT) Single Transistor, PNP, 150 V, 500 mA, 400 mW, SOT-323, Surface Mount

  • Manufacturer: ONSEMI
  • Product type: Single Bipolar Junction Transistors - BJT
  • Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-150V; Transition Frequency ft:100MHz; Power Dissipation Pd:400mW; DC Collector Current:-500mA; DC Current Gain hFE:50hFE;
  • MSL: MSL 1 - Unlimited
  • SVHC: No SVHC (25-Jun-2025)
  • No. of Pins: 3Pins
  • Product Range: -
  • Qualification: AEC-Q101
  • Power Dissipation: 400mW
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: PNP
  • Transition Frequency: 100MHz
  • Transistor Case Style: SOT-323
  • DC Current Gain hFE Min: 50hFE
  • Operating Temperature Max: 150°C
  • Continuous Collector Current: 500mA
  • Collector Emitter Voltage Max: 150V
Delivery and price
Units per pack 5000
Price 0.048 €
Current stock 10+
Lead time 30 days

Updated at March 14, 2026