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NSVMBD54DWT1G
Small Signal Schottky Diode, Dual Isolated, 30 V, 200 mA, 1 V, 600 mA, 125 °C
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- Manufacturer: ONSEMI
- Product type:
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Product Range: -
- Qualification: AEC-Q101
- Diode Mounting: Surface Mount
- Diode Case Style: SOT-363
- Diode Configuration: Dual Isolated
- Forward Voltage Max: 1V
- Forward Surge Current: 600mA
- Reverse Recovery Time: 5ns
- Average Forward Current: 200mA
- Operating Temperature Max: 125°C
- Repetitive Peak Reverse Voltage: 30V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.028 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** ~~ee~~ ## Dual Schottky Barrier Diodes ## MBD54DWT1G These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. ## **30 VOLTS DUAL HOT−CARRIER DETECTOR AND SWITCHING DIODES** **==> picture [129 x 51] intentionally omitted <==** **----- Start of picture text -----**<br> Anode 1 6 Cathode<br>N/C 2 5 N/C<br>Cathode 3 4 Anode<br>**----- End of picture text -----**<br> ## **Features** - Extremely Fast Switching Speed - Low Forward Voltage − 0.35 V @ IF = 10 mAdc - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant - NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable ## **MAXIMUM RATINGS** (TJ = 125 ° C unless otherwise noted) |**MAXIMUM RATINGS** (TJ = 125J = 125= 125°C unless otherwise noted)|C unless otherwise noted)|C unless otherwise noted)|| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Reverse Voltage|VR|30|V| |Forward Power Dissipation<br>@ TA= 25°C<br>Derate above 25°C|PF|150<br>1.2|mW<br>mW/°C| |Forward Current (DC)|IF|200 Max|mA| |Junction Temperature|TJ|125 Max|°C| |Storage Temperature Range|Tstg|−55 to +150|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **==> picture [152 x 112] intentionally omitted <==** **----- Start of picture text -----**<br> MARKING<br>DIAGRAM<br>6<br>SOT−363<br>CASE 419B BL M<br>1 STYLE 6<br>1<br>M = Date Code<br>= Pb−Free Package<br>**----- End of picture text -----**<br> (Note: Microdot may be in either location) ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |MBD54DWT1G|SOT−363<br>(Pb−Free)|3000 /<br>Tape & Reel| |NSVMBD54DWT1G|SOT−363<br>(Pb−Free)|3000 /<br>Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **MBD54DWT1/D** **1** © Semiconductor Components Industries, LLC, 2009 **October, 2025 − Rev. 9** ## **MBD54DWT1G** **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) (EACH DIODE) |**ELECTRICAL CHARACTERISTICS**(TA = 25A = 25= 25°C unless otherwise noted) (EACH DIODE)|C unless otherwise noted) (EACH DIODE)|C unless otherwise noted) (EACH DIODE)|||| |---|---|---|---|---|---| |**Characteristic**<br>~~a~~|**Symbol**<br>~~a~~<br>~~Ge~~|**Min**<br>~~a~~|**Typ**<br>~~a~~|**Max**<br>~~a~~|**Unit**<br>~~a~~| |Reverse Breakdown Voltage (IR= 10 A)<br>~~a~~|V(BR)R<br>~~a~~<br>~~Ge~~|30<br>~~a~~|−<br>~~a~~|−<br>~~a~~|V<br>~~a~~| |Total Capacitance (VR= 1.0 V, f = 1.0 MHz)<br>~~GO~~|CT<br>~~Ge~~<br>~~GO~~|−<br>~~GO~~|7.6<br>~~GO~~|10<br>~~GO~~|pF<br>~~GO~~| |Reverse Leakage (VR= 25 V)<br>~~OG~~|IR<br>~~OG~~|−<br>~~OG~~|0.2<br>~~OG~~|2.0<br>~~OG~~|Adc<br>~~OG~~| |Forward Voltage (IF= 0.1 mAdc)<br>~~Ge~~|VF<br>~~Ge~~|−<br>~~Ge~~|0.22<br>~~Ge~~|0.24<br>~~Ge~~|Vdc<br>~~Ge~~| |Forward Voltage (IF= 30 mAdc)<br>~~eG~~|VF<br>~~eG~~|−<br>~~eG~~|0.41<br>~~eG~~|0.5<br>~~eG~~|Vdc<br>~~eG~~| |Forward Voltage (IF= 100 mAdc)<br>~~eG~~|VF<br>~~eG~~|−<br>~~eG~~|0.52<br>~~eG~~|1.0<br>~~eG~~|Vdc<br>~~eG~~| |Reverse Recovery Time (IF= IR= 10 mAdc, IR(REC)= 1.0 mAdc)<br>(Figure 1)|trr|−<br>~~GO~~|−<br>~~GO~~|5.0|ns| |Forward Voltage (IF= 1.0 mAdc)<br>~~eG~~|VF<br>~~eG~~|−<br>~~eG~~<br>~~GO~~<br>~~GO~~|0.29<br>~~eG~~<br>~~GO~~<br>~~GO~~|0.32<br>~~eG~~|Vdc<br>~~eG~~| |Forward Voltage (IF= 10 mAdc)<br>~~eG~~|VF<br>~~eG~~|−<br>~~GO~~<br>~~eG~~<br>~~GO~~|0.35<br>~~GO~~<br>~~eG~~<br>~~GO~~|0.40<br>~~eG~~|Vdc<br>~~eG~~| |Forward Current (DC)<br>~~GG~~|IF<br>~~GG~~|−<br>~~GO~~<br>~~GG~~|−<br>~~GO~~<br>~~GG~~|200<br>~~GG~~|mAdc<br>~~GG~~| |Repetitive Peak Forward Current<br>~~GG~~|IFRM<br>~~GG~~|−<br>~~GG~~|−<br>~~GG~~|300<br>~~GG~~|mAdc<br>~~GG~~| |Non−Repetitive Peak Forward Current (t < 1.0 s)<br>~~DG~~|IFSM<br>~~DG~~|−<br>~~DG~~|−<br>~~DG~~|600<br>~~DG~~|mAdc<br>~~DG~~| **==> picture [467 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 820 Q<br>+10 V 2 k<br>100 H IF 0.1 F tr t p t IF<br>| “ Do Ak a<br>0.1 F 10% t rr t<br>DUT<br>50 OUTPUT 50 INPUT 90%<br>PULSE SAMPLING iR(REC) = 1 mA<br>GENERATOR OSCILLOSCOPE VR IR OUTPUT PULSE<br>INPUT SIGNAL<br>(IF = IR = 10 mA; measured<br>at iR(REC) = 1 mA)<br>Notes: 1. A 2.0 k Q variable resistor adjusted for a Forward Current (IF) of 10 mA.<br>Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.<br>Notes: 3. tp » trr<br>**----- End of picture text -----**<br> **Figure 1. Recovery Time Equivalent Test Circuit** **www.onsemi.com** **Share Feedback** Your Opinion Matters **2** ## **MBD54DWT1G** **==> picture [492 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 100 1000<br>TA = 150 ° C<br>100 TA = 125 ° C<br>10 °C<br>[fF——inSS<--SLA - f SS+ f LY—_ x ¥xWHwww|_ |J 10 e=SSS——_— = SSS e SSS SSS—SESS a TA = 85 Zz e ° C<br>E E<br>°C es 1<br>1.0<br>85°C 25°C °C °C 0.1 TA = 25 ° C<br>aaa —— ee<br>0.1 DLP 0.01 cr_-_____| | | [| [| [ [| [ [| [ | |<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30<br>VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>IF, FORWARD CURRENT (mA) , REVERSE CURRENT ( μ<br>IR<br>**----- End of picture text -----**<br> **Figure 2. Forward Voltage** **Figure 3. Leakage Current** **==> picture [240 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 14<br>12<br>10<br>8<br>6<br>4 PNET— |<br>2<br>0 ARPES<br>0 5 10 15 20 25 30<br>VR, REVERSE VOLTAGE (VOLTS)<br>CT, TOTAL CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 4. Total Capacitance** **www.onsemi.com** **Share Feedback** Your Opinion Matters **3** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** ## **SC−88 2.00x1.25x0.90, 0.65P** CASE 419B−02 ISSUE Z ## DATE 18 APR 2024 **==> picture [164 x 154] intentionally omitted <==** **----- Start of picture text -----**<br> GENERIC<br>MARKING DIAGRAM*<br>6<br>io o<br>XXXM<br>1 UU U<br>XXX = Specific Device Code<br>M = Date Code*<br>: = Pb−Free Package<br>(Note: Microdot may be in either location)<br>*Date Code orientation and/or position may<br>vary depending upon manufacturing location.<br>**----- End of picture text -----**<br> *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ : ”, may or may not be present. Some products may not follow the Generic Marking. ## **STYLES ON PAGE 2** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **==> picture [169 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> DOCUMENT NUMBER: 98ASB42985B<br>**----- End of picture text -----**<br> ## **SC−88 2.00x1.25x0.90, 0.65P** ## **PAGE 1 OF 2** ## ## **DESCRIPTION:** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba onsemi. **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com Semiconductor Components Industries, LLC, 2019 ## **SC−88 2.00x1.25x0.90, 0.65P** CASE 419B−02 ISSUE Z ## DATE 18 APR 2024 |STYLE 1:|STYLE 2:|STYLE 3:|STYLE 4:|STYLE 5:|STYLE 6:| |---|---|---|---|---|---| |PIN 1. EMITTER 2|CANCELLED|CANCELLED|PIN 1. CATHODE|PIN 1. ANODE|PIN 1. ANODE 2| |2. BASE 2|||2. CATHODE|2. ANODE|2. N/C| |3. COLLECTOR 1|||3. COLLECTOR|3. COLLECTOR|3. CATHODE 1| |4. EMITTER 1|||4. EMITTER|4. EMITTER|4. ANODE 1| |5. BASE 1|||5. BASE|5. BASE|5. N/C| |6. COLLECTOR 2|||6. ANODE|6. CATHODE|6. CATHODE 2| |STYLE 7:|STYLE 8:|STYLE 9:|STYLE 10:|STYLE 11:|STYLE 12:| |PIN 1. SOURCE 2|CANCELLED|PIN 1. EMITTER 2|PIN 1. SOURCE 2|PIN 1. CATHODE 2|PIN 1. ANODE 2| |2. DRAIN 2||2. EMITTER 1|2. SOURCE 1|2. CATHODE 2|2. ANODE 2| |3. GATE 1||3. COLLECTOR 1|3. GATE 1|3. ANODE 1|3. CATHODE 1| |4. SOURCE 1||4. BASE 1|4. DRAIN 1|4. CATHODE 1|4. ANODE 1| |5. DRAIN 1||5. BASE 2|5. DRAIN 2|5. CATHODE 1|5. ANODE 1| |6. GATE 2||6. COLLECTOR 2|6. GATE 2|6. ANODE 2|6. CATHODE 2| |STYLE 13:|STYLE 14:|STYLE 15:|STYLE 16:|STYLE 17:|STYLE 18:| |PIN 1. ANODE|PIN 1. VREF|PIN 1. ANODE 1|PIN 1. BASE 1|PIN 1. BASE 1|PIN 1. VIN1| |2. N/C|2. GND|2. ANODE 2|2. EMITTER 2|2. EMITTER 1|2. VCC| |3. COLLECTOR|3. GND|3. ANODE 3|3. COLLECTOR 2|3. COLLECTOR 2|3. VOUT2| |4. EMITTER|4. IOUT|4. CATHODE 3|4. BASE 2|4. BASE 2|4. VIN2| |5. BASE|5. VEN|5. CATHODE 2|5. EMITTER 1|5. EMITTER 2|5. GND| |6. CATHODE|6. VCC|6. CATHODE 1|6. COLLECTOR 1|6. COLLECTOR 1|6. VOUT1| |STYLE 19:|STYLE 20:|STYLE 21:|STYLE 22:|STYLE 23:|STYLE 24:| |PIN 1. I OUT|PIN 1. COLLECTOR|PIN 1. ANODE 1|PIN 1. D1 (i)|PIN 1. Vn|PIN 1. CATHODE| |2. GND|2. COLLECTOR|2. N/C|2. GND|2. CH1|2. ANODE| |3. GND|3. BASE|3. ANODE 2|3. D2 (i)|3. Vp|3. CATHODE| |4. V CC|4. EMITTER|4. CATHODE 2|4. D2 (c)|4. N/C|4. CATHODE| |5. V EN|5. COLLECTOR|5. N/C|5. VBUS|5. CH2|5. CATHODE| |6. V REF|6. COLLECTOR|6. CATHODE 1|6. D1 (c)|6. N/C|6. CATHODE| |STYLE 25:|STYLE 26:|STYLE 27:|STYLE 28:|STYLE 29:|STYLE 30:| |PIN 1. BASE 1|PIN 1. SOURCE 1|PIN 1. BASE 2|PIN 1. DRAIN|PIN 1. ANODE|PIN 1. SOURCE 1| |2. CATHODE|2. GATE 1|2. BASE 1|2. DRAIN|2. ANODE|2. DRAIN 2| |3. COLLECTOR 2|3. DRAIN 2|3. COLLECTOR 1|3. GATE|3. COLLECTOR|3. DRAIN 2| |4. BASE 2|4. SOURCE 2|4. EMITTER 1|4. SOURCE|4. EMITTER|4. SOURCE 2| |5. EMITTER|5. GATE 2|5. EMITTER 2|5. DRAIN|5. BASE/ANODE|5. GATE 1| |6. COLLECTOR 1|6. DRAIN 1|6. COLLECTOR 2|6. DRAIN|6. CATHODE|6. DRAIN 1| Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. **==> picture [492 x 37] intentionally omitted <==** **----- Start of picture text -----**<br> Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42985B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.<br>DESCRIPTION: SC−88 2.00x1.25x0.90, 0.65P PAGE 2 OF 2<br>**----- End of picture text -----**<br> **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. **www.onsemi.com** ~~**2**~~ www.onsemi.com Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **ADDITIONAL INFORMATION** **TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales **==> picture [232 x 43] intentionally omitted <==**
Updated at April 29, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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