NSVJ6904DSB6T1G

## NSVJ6904DSB6 

## _Advance Information_ 

## N-Channel JFET **−25 V, 20 to 40 mA, 40 mS, Dual** 

The NSVJ6904DSB6 is a composite type of JFET designed for compact size and high efficiency which can achieve high gain performance. This AEC−Q101 qualified and PPAP capable device is suited for automotive applications. 

## **Features** 

- Large | yfs | 

- Small Ciss 

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VDSS RDS(on) MAX ID MAX<br>eeee ee<br>78 m  @ 10 V<br>60 V 4.5 A<br>104 m  @ 4.5 V<br>**----- End of picture text -----**<br>


- Ultralow Noise Figure 

- CPH6 Package is Pin−Compatible with SC−74 

- AEC−Q101 Qualified and PPAP Capable 

- Mounting Area is Greatly Reduced by Incorporating Two JFETs of the NSVJ3910SB3 in One Package of CPH6 Compared with Using Two Separate Packages 

## **Typical Applications** 

- AM Tuner RF Amplification 

- Low Noise Amplifier 

**ELECTRICAL CONNECTION N−Channel** 

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6 5 4<br>1 : Drain 1<br>2 : NC<br>3 : Drain 2<br>4 : Gate 2<br>5 : Source 1 / Source 2<br>6 : Gate 1<br>1 2 3<br>**----- End of picture text -----**<br>


## **Specifications** 

## **MARKING DIAGRAM** 

**ABSOLUTE MAXIMUM RATINGS** (Ta = 25 ° C) **DIAGRAM Symbo Parameter l Value Unit** Drain to Source Voltage VDSX 25 V 6 5 Gate to Drain Voltage VGDS −25 V 4 Gate Current IG 10 mA 12 3 **CPH6** Drain Current ID 50 mA **CASE 318BD** Allowable Power Dissipation 1 unit PD 400 mW Total Power Dissipation PT 700 mW **ORDERING INFORMATION** ~~==~~ Operating Junction and Storage Temperature TJ, TStg −55 to +150 ° C See detailed ordering, marking and shipping information in the ~~°~~ Stresses exceeding those listed in the Maximum Ratings table may damage the package dimensions section on page 4 of this data sheet. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. 

Publication Order Number: **NSVJ6904DSB6/D** 

**1** 

© Semiconductor Components Industries, LLC, 2017 **March, 2018 − Rev. P1** 

**NSVJ6904DSB6** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C, (Note 1)) 

|**ELECTRICAL CHARACTERISTI**|**CS**(TJ= 25°|C, (Note 1))|||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|Gate to Drain Breakdown Voltage|V(BR)GDS|IG= −10�A, VDS= 0 V|−25|−|−|V|
|Gate to Source Leakage Current|IGSS|VGS= −10 V, VDS= 0 V|−|−|−1.0|nA|
|Cutoff Voltage|VGS(off)|VDS= 5 V, ID= 100�A|−0.6|−1.2|−1.8|V|
|Zero−Gate Voltage Drain Current|IDSS|VDS= 5 V, VGS= 0 V|20|−|40|mA|
|Forward Transfer Admittance|| yfs ||VDS= 5 V, VGS= 0 V, f = 1 kHz|30|40|−|mS|
|Input Capacitance|Ciss|VDS= 5 V, VGS= 0 V, f = 1 MHz|−|6.0|−|pF|
|Reverse Transfer Capacitance|Crss||−|2.3|−|pF|
|Noise Figure|NF|VDS= 5 V, VGS= 0 V, f = 100 MHz|−|2.1|2.8|dB|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. The specifications shown above are for each individual JFET. 

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**2** 

**NSVJ6904DSB6** 

## **CHARACTERISTICS** 

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30<br>VGS = 0 V<br>25<br>20 −1.0 V −0.2 V<br>15<br>−0.4 V<br>10<br>−0.6 V<br>5 −0.8 V<br>0<br>0 0.5 1.0 1.5 2.0<br>DRAIN−TO−SOURCE VOLTAGE, VDS − V<br> mA<br>D −<br>DRAIN CURRENT, I<br>**----- End of picture text -----**<br>


**Figure 1. ID − VDS** 

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40<br>35 VGS = 0 V<br>−1.0 V<br>30<br>−0.2 V<br>25<br>20 −0.4 V<br>15<br>−0.6 V<br>10<br>−0.8 V<br>5<br>0<br>0 2 4 6 8 10<br>DRAIN−TO−SOURCE VOLTAGE, VDS − V<br> mA<br>D −<br>DRAIN CURRENT, I<br>**----- End of picture text -----**<br>


**Figure 2. ID − VDS** 

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50<br>VDS = 5 V<br>45<br>40<br>IDSS = 40 mA<br>35<br>30<br>30 mA<br>25<br>20<br>15<br>20 mA<br>10<br>5<br>0<br>−2.0 −1.5 −1.0 −0.5 0 0.5<br>GATE−TO−SOURCE VOLTAGE, VGS − V<br>Figure 3. ID − VGS<br>100<br>7 V DS  = 5 V<br>f = 1 kHz<br>5<br>IDSS = 30 mA<br>3<br>2<br>10<br>7<br>5<br>3<br>2<br>1.0<br>1.0 2 3 5 7 10 2 3 5 7 100<br>DRAIN CURRENT, ID − mA<br>Figure 5. | yfs | − ID<br> mA<br>D −<br>DRAIN CURRENT, I<br>FORWARD TRANSFER ADMITTANCE, | yfs | − mS<br>**----- End of picture text -----**<br>


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50<br>VDS = 5 V<br>45 Ta = −25 ° C<br>40<br>35<br>30 25 ° C<br>75 ° C<br>25<br>20<br>15<br>10<br>5<br>0<br>−2.0 −1.5 −1.0 −0.5 0 0.5<br>GATE−TO−SOURCE VOLTAGE, VGS − V<br>Figure 4. ID − VGS<br>100<br>VDS = 5 V<br>VGS = 0 V<br>7 f = 1 kHz<br>5<br>3<br>2<br>10<br>10 2 3 5 7 100<br>DRAIN CURRENT, IDSS − mA<br> mA<br>D −<br>DRAIN CURRENT, I<br>FORWARD TRANSFER ADMITTANCE, | yfs | − mS<br>**----- End of picture text -----**<br>


**Figure 6. | yfs | − IDSS** 

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**3** 

**NSVJ6904DSB6** 

## **CHARACTERISTICS** 

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10<br>7 V DS = 5 V<br>ID = 100  � A<br>5<br>3<br>2<br>1.0<br>7<br>5<br>3<br>2<br>0.1<br>10 2 3 5 7 100<br>DRAIN CURRENT, IDSS − mA<br>Figure 7. VGS(off) − IDSS<br>10<br>VGS = 0 V<br>f = 1 MHz<br>7<br>5<br>3<br>2<br>1.0<br>1.0 2 3 5 7 10 2 3 5 7 100<br>DRAIN−TO−SOURCE VOLTAGE, VDS − V<br>(off) − V<br>GS<br>CUTOFF VOLTAGE, V<br>REVERSE TRANSFER CAPACITANCE, Crss − pF<br>**----- End of picture text -----**<br>


**Figure 9. Crss − VDS** 

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10<br>VGS = 0 V<br>f = 1 MHz<br>7<br>5<br>3<br>2<br>1.0<br>1.0 2 3 5 7 10 2 3 5 7 100<br>DRAIN−TO−SOURCE VOLTAGE, VDS − V<br>INPUT CAPACITANCE, Ciss − pF<br>**----- End of picture text -----**<br>


**Figure 8. Ciss − VGDS** 

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800<br>PT<br>700<br>600<br>500<br>1 unit<br>400<br>300<br>200<br>100<br>0<br>0 20 40 60 80 100 120 140 160<br>AMBIENT TEMPERATURE, Ta −  ° C<br>Figure 10. PD, PT − Ta<br>− mW<br>T<br>, P<br>D<br>ALLOWABLE POWER DISSIPATION, P<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**||||
|---|---|---|---|
|**Device Order Number**|**Specific Device Marking**|**Package Type**|**Shipping**†|
|NSVJ6904DSB6T1G|1P|CPH6<br>(Pb−Free / Halogen Free)|3,000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**CPH6** CASE 318BD ISSUE O DATE 30 NOV 2011 

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DOCUMENT NUMBER: 98AON65440E Electronic versions are uncontrolled except when<br>accessed directly from the Document Repository. Printed<br>STATUS: ON SEMICONDUCTOR STANDARD<br>versions are uncontrolled except when stamped<br>“CONTROLLED COPY” in red.<br>NEW STANDARD:<br>©   Semiconductor Components Industries, LLC, 2002 http://onsemi.com Case Outline Number:<br>October, 2002 − Rev. 0DESCRIPTION: CPH6 1 PAGE 1 OF 2XXX<br>**----- End of picture text -----**<br>


|**DOCUMENT NUMBER:**<br>**98AON65440E**<br>**PAGE 2 OF 2**<br>~~— ©~~<br>~~———~~|**DOCUMENT NUMBER:**<br>**98AON65440E**<br>**PAGE 2 OF 2**<br>~~— ©~~<br>~~———~~|
|---|---|
|**ISSUE**|**REVISION**<br>**DATE**|
|O|RELEASED FOR PRODUCTION FROM SANYO ENACT# TC−00000733 TO ON<br>30 NOV 2011|
||SEMICONDUCTOR. REQ. BY D. TRUHITTE.|



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Case Outline Number: 

© Semiconductor Components Industries, LLC, 2011 **November, 2011 − Rev. O** 

**318BD** 

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