Image not available
Illustrative purposes only
NSVEMT1DXV6T5G
Bipolar Transistor Array, Dual PNP, 60 V, 100 mA
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Bipolar Junction Transistor Arrays - BJT
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2018)
- No. of Pins: 6Pins
- Product Range: EMT1DXV6 Series
- Qualification: AEC-Q101
- Transistor Mounting: Surface Mount
- Transistor Polarity: Dual PNP
- Power Dissipation NPN: -
- Power Dissipation PNP: 500mW
- Transistor Case Style: SOT-563
- Transition Frequency NPN: -
- Transition Frequency PNP: 140MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: -
- DC Current Gain hFE Min PNP: 120hFE
- Continuous Collector Current NPN: -
- Continuous Collector Current PNP: 100mA
- Collector Emitter Voltage Max NPN: -
- Collector Emitter Voltage Max PNP: 60V
| Delivery and price | |
|---|---|
| Units per pack | 8000 |
| Price | 0.065 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
|
|---|
Updated at March 18, 2026