NSVBAV70TT1G

**DATA SHEET www.onsemi.com** 

## Dual Switching Diode BAV70T, NSVBAV70T 

ANODE 1 3 CATHODE 2 ANODE 

## **Features** 

- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **MAXIMUM RATINGS** (TA = 25 ° C) 

|**MAXIMUM RATINGS**(TA= 25°C)||||
|---|---|---|---|
|**Rating**|**Symbol**|**Max**|**Unit**|
|Reverse Voltage|VR|100|Vdc|
|Forward Current|IF|200|mAdc|
|Peak Forward Surge Current|IFM(surge)|500|mAdc|
|**THERMAL CHARACTERISTICS**||||
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Total Device Dissipation,<br>FR−4 Board (Note 1)<br>TA= 25°C<br>Derated above 25°C|PD|225<br>1.8|mW<br>mW/°C|
|Thermal Resistance,<br>Junction to Ambient (Note 1)|R�JA|555|°C/W|
|Total Device Dissipation,<br>FR−4 Board (Note 2)<br>TA= 25°C<br>Derated above 25°C|PD|360<br>2.9|mW<br>mW/°C|
|Thermal Resistance,<br>Junction−to−Ambient (Note 2)|R�JA|345|°C/W|
|Junction and Storage<br>Temperature Range|TJ, Tstg|−55 to<br>+150|°C|



**MARKING DIAGRAM** 

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3<br>CASE 463<br>SOT−416/SC−75 A4 M �<br>2 STYLE 3 �<br>1<br>1<br>**----- End of picture text -----**<br>


A4 = Specific Device Code M = Date Code � = Pb−Free Package 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|BAV70TT1G|SOT−416<br>(Pb-Free)|3000 / Tape &<br>Reel|
|NSVBAV70TT1G|SOT−416<br>(Pb-Free)|3000 / Tape &<br>Reel|
|NSVBAV70TT3G|SOT−416<br>(Pb-Free)|10000 / Tape &<br>Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. FR−4 @ Minimum Pad 

2. FR−4 @ 1.0 × 1.0 Inch Pad 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2015 **May, 2023 − Rev. 7** 

**BAV70TT1/D** 

## **BAV70T, NSVBAV70T** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Reverse Breakdown Voltage<br>(I(BR)= 100�Adc)|V(BR)|100|−|Vdc|
|Reverse Voltage Leakage Current (Note 3)<br>(VR= 100 Vdc)<br>(VR= 50 Vdc)|IR<br>IR|−<br>−|1.0<br>100|�Adc<br>nAdc|
|Diode Capacitance<br>(VR= 0, f = 1.0 MHz)|CD|−|1.5|pF|
|Forward Voltage<br>(IF= 1.0 mAdc)<br>(IF= 10 mAdc)<br>(IF= 50 mAdc)<br>(IF= 150 mAdc)|VF|−<br>−<br>−<br>−|715<br>855<br>1000<br>1250|mVdc|
|Reverse Recovery Time<br>(IF= IR= 10 mAdc, RL= 100�, IR(REC)= 1.0 mAdc) (Figure 1)|trr|−|6.0|ns|
|Forward Recovery Voltage<br>(IF= 10 mAdc, tr= 20 ns) (Figure 2)|VRF|−|1.75|V|



3. For each individual diode while the second diode is unbiased. 

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**2** 

**BAV70T, NSVBAV70T** 

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BAV70<br>RS = 50 �<br>SAMPLING<br>OSCILLOSCOPE<br>IF RL = 50 �<br>tr tp<br>I<br>10%<br>+IF trr OUTPUT PULSE<br>VR<br>10%�OF�<br>90% 100��<br>VR<br>INPUT PULSE<br>**----- End of picture text -----**<br>


**Figure 1. Recovery Time Equivalent Test Circuit** 

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1 K� 450 �<br>RS = 50 �<br>SAMPLING<br>BAV70<br>OSCILLOSCOPE<br>RL = 50 �<br>I<br>V<br>90%<br>VFR<br>10%<br>t<br>tr tp<br>INPUT PULSE Figure 2.  OUTPUT PULSE t<br>**----- End of picture text -----**<br>


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**3** 

**BAV70T, NSVBAV70T** 

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100 10<br>TA = 150°C<br>TA = 125°C<br>1.0<br>10<br>TA = 85°C TA = 85°C<br>0.1<br>1.0 TA = 25°C TA = 55°C<br>TA = -�40°C 0.01<br>TA = 25°C<br>0.1 0.001<br>0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50<br>VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>μ<br>IR, REVERSE CURRENT (<br>IF, FORWARD CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 3. Forward Voltage** 

**Figure 4. Leakage Current** 

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1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>0 2 4 6 8<br>VR, REVERSE VOLTAGE (VOLTS)<br>CD, DIODE CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 5. Capacitance** 

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1.0<br>D = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>0.01 0.01<br>SINGLE PULSE<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t, TIME (s)<br>r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 6. Normalized Thermal Response** 

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**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **SC75−3 1.60x0.80x0.80, 1.00P** 

CASE 463 ISSUE H 

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DATE 01 FEB 2024<br>**----- End of picture text -----**<br>


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GENERIC<br>MARKING DIAGRAM*<br>XXM<br>1<br>XX = Specific Device Code<br>M = Date Code<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. 

STYLE 1: STYLE 2: STYLE 3: PIN 1. BASE PIN 1. ANODE PIN 1. ANODE 2. EMITTER 2. N/C 2. ANODE 3. COLLECTOR 3. CATHODE 3. CATHODE 

STYLE 4: STYLE 5: PIN 1. CATHODE PIN 1. GATE 2. CATHODE 2. SOURCE 3. ANODE 3. DRAIN 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**DOCUMENT NUMBER: 98ASB15184C** 

**DESCRIPTION: SC75−3 1.60x0.80x0.80, 1.00P** 

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