NSVBAT54M3T5G

BAT54M3T5G 

## Schottky Barrier Diode 

This Schottky barrier diode is designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. 

The BAT54M3T5G device is a spin−off of our popular SOT−23 three−leaded device and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. 

## **Features** 

- Extremely Fast Switching Speed 

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**30 V SILICON HOT−CARRIER DETECTOR AND SWITCHING DIODE** 

- Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc 

- Reduces Board Space 

 Reduces Board Space 3 1 CATHODE ANODE • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable **MARKING** • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS **DIAGRAM** Compliant 3 **SOT−723 MAXIMUM RATINGS** (TJ = 125 ° C unless otherwise noted) **CASE 631AA** AP M **Rating Symbol Value Unit** e@ 1 2 **STYLE 2** 1 ~~CF~~ Reverse Voltage VR 30 V AP = Specific Device Code Forward Power Dissipation PF M = Date Code @ TA = 25 ° C 200 mW Derate above 25 ° C 2.0 mW/ ° C Forward Current (DC) IF 200 Max mA **ORDERING INFORMATION** Non−Repetitive Peak Forward Current IFSM 600 mA **Device Package Shipping**[†] tp < 10 msec BAT54M3T5G SOT−723 8000/Tape & Reel Repetitive Peak Forward Current IFRM 300 mA (Pb−Free) Pulse Wave = 1 sec, Duty Cycle = 66% NSVBAT54M3T5G SOT−723 8000/Tape & Reel Junction Temperature TJ −55 to +125 ° C (Pb−Free) ~~See~~ Storage Temperature Range Tstg −55 to +150 ° C †For information on tape and reel specifications,including part orientation and tape sizes, please Stresses exceeding those listed in the Maximum Ratings table may damage the refer to our Tape and Reel Packaging Specifications device. If any of these limits are exceeded, device functionality should not be Brochure, BRD8011/D. assumed, damage may occur and reliability may be affected. 

Publication Order Number: **BAT54M3/D** 

© Semiconductor Components Industries, LLC, 2014 **July, 2014 − Rev. 2** 

**BAT54M3T5G** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted|)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Reverse Breakdown Voltage (IR= 10�A)|V(BR)R|30|−|−|V|
|Total Capacitance (VR= 1.0 V, f = 1.0 MHz)|CT|−|7.6|10|pF|
|Reverse Leakage (VR= 25 V)|IR|−|0.5|2.0|�A|
|Forward Voltage<br>(IF= 0.1 mA)<br>(IF= 1.0 mA)<br>(IF= 10 mA)<br>(IF= 30 mA)<br>(IF= 100 mA)|VF|−|0.22|0.24|V|
|||−|0.29|0.32||
|||−|0.35|0.40||
|||−|0.41|0.5||
|||−|0.52|0.8||
|Reverse Recovery Time (IF= IR= 10 mA, IR(REC)= 1.0 mA, Figure 1)|trr|−|−|5.0|ns|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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**2** 

**BAT54M3T5G** 

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820  Ω<br>+10 V 100 2 k μ H IF 0.1  μ F tr t p T IF<br>0.1  μ F 10% t rr T<br>DUT<br>50  Ω  OUTPUT 50  Ω  INPUT 90%<br>PULSE SAMPLING iR(REC) = 1 mA<br>GENERATOR OSCILLOSCOPE VR IR OUTPUT PULSE<br>INPUT SIGNAL<br>(IF = IR = 10 mA; measured<br>at iR(REC) = 1 mA)<br>Notes: 1. A 2.0 k Ω  variable resistor adjusted for a Forward Current (IF) of 10 mA.<br>Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.<br>Notes: 3. tp » trr<br>**----- End of picture text -----**<br>


**Figure 1. Recovery Time Equivalent Test Circuit** 

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100 1000<br>125 ° C TA = 150 ° C<br>85 ° C 100 TA = 125 ° C<br>10 10<br>150 ° C 1.0 T A  = 85 ° C<br>1.0 0.1<br>25 ° C −40 ° C −55 ° C 0.01 TA = 25 ° C<br>0.1 0.001<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30<br>VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>μ<br>, REVERSE CURRENT (<br>, FORWARD CURRENT (mA)IF IR<br>**----- End of picture text -----**<br>


**Figure 2. Forward Voltage** 

**Figure 3. Leakage Current** 

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14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 5 10 15 20 25 30<br>VR, REVERSE VOLTAGE (VOLTS)<br>, TOATAL CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


**Figure 4. Total Capacitance** 

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**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **SOT−723 1.20x0.80x0.50, 0.40P** CASE 631AA ISSUE E 

## DATE 24 JAN 2024 

## **GENERIC MARKING DIAGRAM*** 

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XX M<br>1<br>**----- End of picture text -----**<br>


   - XX = Specific Device Code M = Date Code 

- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. 

STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: PIN 1. BASE PIN 1. ANODE PIN 1. ANODE PIN 1. CATHODE PIN 1. GATE 2. EMITTER 2. N/C 2. ANODE 2. CATHODE 2. SOURCE 3. COLLECTOR 3. CATHODE 3. CATHODE 3. ANODE 3. DRAIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON12989D** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SOT−723 1.20x0.80x0.50, 0.40P PAGE 1 OF 1** 

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