NSVBAT54HT1G

## BAT54H 

## Schottky Barrier Diodes 

These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. 

## **www.onsemi.com** 

## **Features** 

- Extremely Fast Switching Speed 

- Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc 

- Device Marking: JV 

**30 VOLT SILICON HOT−CARRIER DETECTOR AND SWITCHING DIODES** 

- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* 

**SOD−323 CASE 477 STYLE 1** 

**MAXIMUM RATINGS** (TJ = 125 ° C unless otherwise noted) **Rating Symbol Value Unit** Reverse Voltage VR 30 V ~~-——_______|_|_|~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

**==> picture [94 x 36] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 2<br>CATHODE ANODE<br>1<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

**THERMAL CHARACTERISTICS** JVM **Characteristic Symbol Max Unit** 1 2 ~~a |~~ Total Device Dissipation FR−5 Board, PD (Note 1) TA = 25 ° C 200 mW JV = Device Code Derate above 25 ° C 1.57 mW/ ° C M = Date Code ~~FUE~~ = Pb−Free Package Forward Current (DC) IF 200 mA Max (Note: Microdot may be in either location) Non−Repetitive Peak Forward Current, IFSM mA **ORDERING INFORMATION** tp < 10 msec 600 Repetitive Peak Forward Current IFRM mA **Device Package Shipping**[†] Pulse Wave = 1 sec, Duty Cycle =  66% 300 BAT54HT1G SOD−323 3,000 / ~~ee eee~~ Thermal Resistance R JA ° C/W (Pb−Free) Tape & Reel Junction−to−Ambient 635 NSVBAT54HT1G SOD−323 3,000 / Junction and Storage Temperature Range TJ, Tstg −55 ° C (Pb−Free) Tape & Reel to150 ~~EE~~ †For information on tape and reel specifications, 1. FR−4 Minimum Pad including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **BAT54HT1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **December, 2014 − Rev. 7** 

**BAT54H** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise not|ed)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Reverse Breakdown Voltage<br>(IR= 10μA)|V(BR)R|30|−|−|V|
|Total Capacitance<br>(VR= 1.0 V, f = 1.0 MHz)|CT|−|7.6|10|pF|
|Reverse Leakage<br>(VR= 25 V)|IR|−|0.5|2.0|μAdc|
|Forward Voltage<br>(IF= 0.1 mA)<br>(IF= 1.0 mA)<br>(IF= 10 mA)<br>(IF= 30 mA)<br>(IF= 100 mA)|VF|−<br>−<br>−<br>−<br>−|0.22<br>0.29<br>0.35<br>0.41<br>0.52|0.24<br>0.32<br>0.40<br>0.50<br>0.80|V|
|Reverse Recovery Time<br>(IF= IR= 10 mAdc, IR(REC)= 1.0 mAdc) Figure 1|trr|−|−|5.0|ns|



**==> picture [485 x 137] intentionally omitted <==**

**----- Start of picture text -----**<br>
820  Ω<br>+10 V 2 k 100 μH IF 0.1 μF tr t p t IF<br>0.1  μ F 10% t rr t<br>DUT<br>50  Ω  Output 50  Ω  Input 90%<br>Pulse Sampling iR(REC) = 1 mA<br>Generator Oscilloscope VR IR OUTPUT PULSE<br>INPUT SIGNAL<br>(IF = IR = 10 mA; measured<br>at iR(REC) = 1 mA)<br>**----- End of picture text -----**<br>


Notes: 1. A 2.0 k Ω variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr 

**Figure 1. Recovery Time Equivalent Test Circuit** 

**www.onsemi.com** 

**2** 

**BAT54H** 

**==> picture [236 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>10 150 ° C<br>125 ° C<br>1.0<br>85 ° C<br>25 ° C −40 ° C −55 ° C<br>0.1<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6<br>VF, FORWARD VOLTAGE (VOLTS)<br>, FORWARD CURRENT (mA)<br>IF<br>**----- End of picture text -----**<br>


**Figure 2. Forward Voltage** 

**==> picture [242 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>TA = 150 ° C<br>100<br>T A  = 125 ° C<br>10<br>1.0<br>T A  = 85 ° C<br>0.1<br>0.01<br>TA = 25 ° C<br>0.001<br>0 5 10 15 20 25 30<br>VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>μ<br>, REVERSE CURRENT (<br>IR<br>**----- End of picture text -----**<br>


**Figure 3. Leakage Current** 

**==> picture [238 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 5 10 15 20 25 30<br>VR, REVERSE VOLTAGE (VOLTS)<br>, TOATAL CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


**Figure 4. Total Capacitance** 

**www.onsemi.com** 

**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

DATE 13 MAR 2007 

**SOD−323** CASE 477−02 ISSUE H 

**==> picture [216 x 228] intentionally omitted <==**

**----- Start of picture text -----**<br>
a 2 2<br>1 1<br>STYLE 1 STYLE 2<br>SCALE 4:1<br>HE<br>D<br>=<br>b 1 2 E<br>=<br>A3<br>A<br>C if NOTE 5L A1 C o,<br>NOTE 3<br>**----- End of picture text -----**<br>


**==> picture [141 x 108] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOLDERING FOOTPRINT*<br>0.63<br>0.025<br>se<br>0.83<br>0.033<br>1.60<br>Ua<br>0.063<br>2.85<br>0.112<br>**----- End of picture text -----**<br>


- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

NOTES: 

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 

2. CONTROLLING DIMENSION: MILLIMETERS. 

3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 

4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 

5. DIMENSION L IS MEASURED FROM END OF RADIUS. 

**==> picture [145 x 92] intentionally omitted <==**

**----- Start of picture text -----**<br>
MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 0.80 0.90 1.00 0.031 0.035 0.040<br>A1 0.00 0.05 0.10 0.000 0.002 0.004<br>A3 0.15 REF 0.006 REF<br>b 0.25 0.32 0.4 0.010 0.012 0.016<br>C 0.089 0.12 0.177 0.003 0.005 0.007<br>D 1.60 1.70 1.80 0.062 0.066 0.070<br>E 1.15 1.25 1.35 0.045 0.049 0.053<br>L 0.08 0.003<br>HE 2.30 2.50 2.70 0.090 0.098 0.105<br>Pt —— —*| 4 ]<br>**----- End of picture text -----**<br>


**==> picture [93 x 18] intentionally omitted <==**

**----- Start of picture text -----**<br>
GENERIC<br>MARKING DIAGRAM*<br>**----- End of picture text -----**<br>


**==> picture [161 x 77] intentionally omitted <==**

**----- Start of picture text -----**<br>
XX M XX M<br>qf p 2:<br>STYLE 1 STYLE 2<br>XX = Specific Device Code<br>M = Date Code<br>**----- End of picture text -----**<br>


- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. 

STYLE 1: STYLE 2: PIN 1. CATHODE (POLARITY BAND) NO POLARITY 2. ANODE 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB17533C** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SOD−323 PAGE 1 OF 1** ~~ee~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada **ON Semiconductor Website:** www.onsemi.com Phone: 011 421 33 790 2910 

◊ 

**www.onsemi.com** 

**Europe, Middle East and Africa Technical Support:** Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative 

**1**