NSVBASH21LT1G

**DATA SHEET www.onsemi.com** 

## Switching Diode, High Voltage, High Temperature 

## BASH19L Series 

## **Features** 

- 175°C TJ(MAX) − Rated for High Temperature, Mission Critical Applications 

- NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **HIGH VOLTAGE SWITCHING DIODE** 

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SOT−23<br>3 1<br>CATHODE ANODE<br>3<br>1<br>2<br>SOT−23 (TO−236)<br>CASE 318<br>STYLE 8<br>**----- End of picture text -----**<br>


## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Continuous Reverse Voltage<br>BASH19<br>BASH20<br>BASH21|VR|120<br>200<br>250|Vdc|
|Repetitive Peak Reverse Voltage<br>BASH19<br>BASH20<br>BASH21|VRRM|120<br>200<br>250|Vdc|
|Continuous Forward Current|IF|200|mAdc|
|Peak Forward Surge Current<br>(1/2 Cycle, Sine Wave, 60 Hz)|IFSM|2|A|
|Repetitive Peak Forward Current<br>(Pulse Train: TON= 1 s, TOFF= 0.5 s)|IFRM|0.6|A|
|Junction and Storage Temperature<br>Range|TJ, Tstg|−55 to +175|°C|
|Electrostatic Discharge|ESD|HM < 500<br>MM < 400|V<br>V|



## **MARKING DIAGRAM** 

||||3||||||
|---|---|---|---|---|---|---|---|---|
||||xxx M�||||||
|||||�|||||
|1|||||2||||
|AD7|||= BASH19L||||||
|AC7|||= BASH20L||||||
|AA7|||= BASH21L||||||
|M<br>�|||= Date Code<br>= Pb−Free Package||||||



(Note: Microdot may be in either location) 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

Publication Order Number: **BASH19L/D** 

**1** 

© Semiconductor Components Industries, LLC, 2018 **June, 2023 − Rev. 3** 

**BASH19L Series** 

## **THERMAL CHARACTERISTICS** 

|**Characteristic**|**Symbol**|**Max**|**Unit**|
|---|---|---|---|
|Total Device Dissipation FR−5 Board<br>(Note 1)<br>TA= 25°C<br>Derate above 25°C|PD|300<br>1.8|mW<br>mW/°C|
|Thermal Resistance Junction−to−Ambient (SOT−23)|R�JA|340|°C/W|
|Total Device Dissipation Alumina Substrate<br>(Note 2)<br>TA= 25°C<br>Derate above 25°C|PD|400<br>2.4|mW<br>mW/°C|
|Thermal Resistance Junction−to−Ambient|R�JA|250|°C/W|
|Junction and Storage Temperature Range|TJ, Tstg|−55 to +175|°C|



1. FR−5 = 1.0 � 0.75 � 0.062 in. 

2. Alumina = 0.4 � 0.3 � 0.024 in. 99.5% alumina. 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|Reverse Voltage Leakage Current<br>(VR= 100 Vdc)<br>BASH19<br>(VR= 150 Vdc)<br>BASH20<br>(VR= 200 Vdc)<br>BASH21<br>(VR= 100 Vdc, TJ= 175°C)<br>BASH19<br>(VR= 150 Vdc, TJ= 175°C)<br>BASH20<br>(VR= 200 Vdc, TJ= 175°C)<br>BASH21|IR|−<br>−<br>−<br>−<br>−<br>−|0.1<br>0.1<br>0.1<br>100<br>100<br>100|�Adc|
||V(BR)|120<br>200<br>250|−<br>−<br>−|Vdc|
|Reverse Breakdown Voltage<br>(IBR= 100�Adc)<br>BASH19<br>(IBR= 100�Adc)<br>BASH20<br>(IBR= 100�Adc)<br>BASH21|||||
||||||
|Forward Voltage<br>(IF= 100 mAdc)<br>(IF= 200 mAdc)|VF|−<br>−|1.0<br>1.25|Vdc|
|Diode Capacitance (VR= 0, f = 1.0 MHz)|CD|−|5.0|pF|
|Reverse Recovery Time (IF= IR= 30 mAdc, IR(REC)= 3.0 mAdc, RL= 100)|trr|−|50|ns|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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820 �<br>IF<br>+10 V 2.0 k 0.1 �F tr t p t<br>100 �H IF 10% t rr t<br>0.1 �F<br>D.U.T. 90%<br>50 � OUTPUT 50 � INPUT IR(REC) = 3.0 mA<br>IR<br>PULSE SAMPLING VR OUTPUT PULSE<br>GENERATOR OSCILLOSCOPE INPUT SIGNAL<br>(IF = IR = 30 mA; MEASURED<br>at IR(REC) = 3.0 mA)<br>Notes: 1. A 2.0 k �  variable resistor adjusted for a Forward Current (IF) of 30 mA.<br>Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.<br>Notes: 3. tp » trr<br>**----- End of picture text -----**<br>


**Figure 1. Recovery Time Equivalent Test Circuit** 

**www.onsemi.com** 

**2** 

**BASH19L Series** 

## **TYPICAL CHARACTERISTICS** 

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200 100<br>175°C<br>10<br>175°C 125°C<br>20 1<br>125°C 85°C<br>0.1<br>85°C<br>2.0 0.01<br>25°C<br>0.001<br>25°C -55°C<br>0.2 0.0001<br>0.2 0.4 0.6 0.8 1.0 1.2 0 30 60 90 120 150 180 210 240 270<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 2. Forward Voltage Figure 3. Leakage Current<br>1.2 30<br>1.1 Tf = 1 MHzA = 25°C 25 Based on square wave currentsT J = 25°C prior to surge<br>1.0<br>20<br>0.9<br>0.8 15<br>0.7<br>10<br>0.6<br>5<br>0.5<br>0.4 0<br>0 2 4 6 8 10 0.001 0.01 0.1 1 10 100 1000<br>VR, REVERSE VOLTAGE (V) tp, PULSE ON TIME (ms)<br>A)<br>μ<br>IR, REVERSE CURRENT (<br>IF, FORWARD CURRENT (mA)<br>CD, DIODE CAPACITANCE (pF)<br>, FORWARD SURGE MAX CURRENT (A)<br>IFSM<br>**----- End of picture text -----**<br>


**Figure 4. Capacitance** 

**Figure 5. Forward Surge Current** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**†|
|BASH19LT1G|SOT−23<br>(Pb−Free)|3000 / Tape & Reel|
|NSVBASH19LT1G*|SOT−23<br>(Pb−Free)|3000 / Tape & Reel|
|BASH20LT1G|SOT−23<br>(Pb−Free)|3000 / Tape & Reel|
|NSVBASH20LT1G*|SOT−23<br>(Pb−Free)|3000 / Tape & Reel|
|BASH21LT1G|SOT−23<br>(Pb−Free)|3000 / Tape & Reel|
|NSVBASH21LT1G*|SOT−23<br>(Pb−Free)|3000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

*NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable − release available upon request. 

**www.onsemi.com** 

**3** 

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## **ADDITIONAL INFORMATION** 

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