NSVBASH16MX2WT5G

**DATA SHEET www.onsemi.com** 

## High Voltage Switching Diodes 

## BASH16MX2W 

The BASHxxMX2W Switching Diode is a spin−off of our popular SOT−23 three−leaded device. It is designed for switching applications and is housed in the X2DFNW2 (1.0x0.6mm) surface mount package. This device is ideal for low−power surface mount applications, where board space is at a premium. 

## **Features** 

**==> picture [192 x 139] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 2<br>CATHODE ANODE<br>MARKING<br>DIAGRAM<br>X2DFNW2 XXM<br>CASE 711BG<br>XX = Specific Device Code<br>M = Date Code<br>**----- End of picture text -----**<br>


- 175°C TJ(max) − Rated for High Temperature, Mission Critical Applications 

- Wettable Flank Package for optimal Automated Optical Inspection (AOI) 

## **ORDERING INFORMATION** 

See detailed ordering, marking and shipping information on page 4 of this data sheet. 

- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Continuous Reverse Voltage<br>BASH16<br>BASH19<br>BASH20<br>BASH21|VR,<br>VRRM|100<br>120<br>200<br>250|Vdc|
|Continuous Forward Current|IF|200|mAdc|
|Repetitive Peak Forward Current<br>(Pulse Wave = 1 sec, Duty Cycle = 66%)|IFRM|500|mA|
|Non−Repetitive Peak Forward Current<br>(Square Wave, TJ= 25°C prior to surge)<br>BASH16<br>t = 1�s<br>t = 1 ms<br>t = 1 s<br>BASH19/20/21<br>t = 1�s<br>t = 1 ms<br>t = 1 s|IFSM|5.0<br>2.0<br>0.5<br>9.0<br>3.0<br>1.7|A|



## **THERMAL CHARACTERISTICS** 

|**Characteristic**|**Symbol**|**Max**|**Unit**|
|---|---|---|---|
|Total Device Dissipation FR−5 Board<br>TA= 25°C (Note 1)|PD|300|mW|
|Thermal Resistance Junction−to−Ambient<br>(Note 1)|R�JA|400|°C/W|
|Thermal Resistance Junction−to−Solder<br>Point (Note 1)|R�JSP|105|°C/W|
|Junction and Storage Temperature Range|TJ, Tstg|−55 to<br>+175|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06 ″ thick single sided. Operating to steady state. 

Publication Order Number: **BASH16MX2W/D** 

**1** 

© Semiconductor Components Industries, LLC, 2019 **May, 2023 − Rev. 2** 

**BASH16MX2W** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Reverse Voltage Leakage Current<br>(VR= 80 Vdc)<br>BASH16<br>(VR= 100 Vdc)<br>BASH19<br>(VR= 150 Vdc)<br>BASH20<br>(VR= 200 Vdc)<br>BASH21<br>(VR= 80 Vdc, TJ= 150°C)<br>BASH16<br>(VR= 25 Vdc, TJ= 150°C)<br>BASH16<br>(VR= 100 Vdc, TJ= 150°C)<br>BASH19<br>(VR= 150 Vdc, TJ= 150°C)<br>BASH20<br>(VR= 200 Vdc, TJ= 150°C)<br>BASH21|IR|−<br>−<br>−<br>−<br>−<br>−<br>−<br>−<br>−|0.5<br>0.1<br>0.1<br>0.1<br>50<br>30<br>100<br>100<br>100|�Adc|
|Reverse Breakdown Voltage (IBR= 100�Adc)<br>BASH16<br>BASH19<br>BASH20<br>BASH21|V(BR)|100<br>120<br>200<br>250|−<br>−<br>−<br>−|Vdc|
|Forward Voltage<br>(IF= 100 mAdc)<br>(IF= 200 mAdc)|VF|−<br>−|1.0<br>1.25|Vdc|
|Diode Capacitance (VR= 0, f = 1.0 MHz)|CD|−|3.0|pF|
|Reverse Recovery Time<br>(IF= IR= 10 mAdc, RL= 50�)<br>BASH16<br>(IF= IR= 30 mAdc, RL= 100�)<br>BASH19/20/21|trr|−<br>−|6.0<br>50|ns|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

**==> picture [484 x 130] intentionally omitted <==**

**----- Start of picture text -----**<br>
820 �<br>IF<br>+10 V 2.0 k 0.1 �F tr t p t<br>100 �H IF 10% t rr t<br>0.1 �F<br>D.U.T. 90%<br>50 � OUTPUT 50 � INPUT iR(REC) = 1.0 mA<br>IR<br>PULSE SAMPLING VR OUTPUT PULSE<br>GENERATOR OSCILLOSCOPE INPUT SIGNAL<br>(IF = IR = 10 mA; MEASURED<br>at iR(REC) = 1.0 mA)<br>**----- End of picture text -----**<br>


Notes: 1. A 2.0 k � variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr 

**Figure 1. Recovery Time Equivalent Test Circuit** 

**www.onsemi.com** 

**2** 

**BASH16MX2W** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [240 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>125 ° C 75 ° C<br>0.1<br>25 ° C<br>150 ° C<br>0.01 0 ° C<br>175 ° C −40 ° C<br>0.001<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VF, FORWARD VOLTAGE (V)<br>, FORWARD CURRENT (A)<br>IF<br>**----- End of picture text -----**<br>


**Figure 2. Forward Voltage** 

**==> picture [239 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.2<br>1.0<br>0.8<br>BAS20<br>0.6<br>BAS21<br>0.4<br>BAS16 BAS19<br>0.2<br>0.0<br>0 5 10 15 20 25 30 35 40<br>VR, REVERSE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 3. Total Capacitance** 

**==> picture [489 x 390] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 100<br>175 ° C<br>150 ° C 10 175 ° C<br>10 125 ° C 150 ° C<br>1 125 ° C<br>1<br>75 ° C<br>0.1 75 ° C<br>0.1<br>0.01<br>°<br>0.01 25 C 25 ° C<br>0.001<br>0.001 −400 ° C ° C 0.0001 −400 ° C ° C<br>0.0001 0.00001<br>0 20 40 60 80 100 120 0 20 40 60 80 100 120<br>VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 4. Reverse Current − BASH16 Figure 5. Reverse Current − BASH19<br>100 100<br>10 175 ° C 10 175 ° C<br>150 ° C 150 ° C<br>1 125 ° C 1 125 ° C<br>0.1 75 ° C 0.1 75 ° C<br>0.01 0 ° C 25 ° C 0.01 25 ° C<br>0.001 −40 ° C 0.001 −40 ° C 0 ° C<br>0.0001 0.0001<br>0 50 100 150 200 250 0 50 100 150 200 250<br>VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>A) A)<br>� �<br>, REVERSE LEAKAGE CURRENT ( , REVERSE LEAKAGE CURRENT (<br>IR IR<br>A)<br>� A)<br>�<br>, REVERSE LEAKAGE CURRENT (<br>IR , REVERSE LEAKAGE CURRENT (<br>IR<br>**----- End of picture text -----**<br>


**Figure 6. Reverse Current − BASH20** 

**Figure 7. Reverse Current − BASH21** 

**www.onsemi.com** 

**3** 

**BASH16MX2W** 

## **DEVICE ORDERING INFORMATION** 

|**Device**|**Marking**|**Package**|**Shipping**†|
|---|---|---|---|
|BASH16MX2WT5G,<br>NSVBASH16MX2WT5G*|MF|X2DFN2<br>(Pb−Free)|8000 / Tape & Reel|
|BASH19MX2WT5G,<br>NSVBASH19MX2WT5G*|ME|||
|BASH20MX2WT5G,<br>NSVBASH20MX2WT5G*|MG|||
|BASH21MX2WT5G,<br>NSVBASH21MX2WT5G*|MH|||



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. 

**www.onsemi.com** 

**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**X2DFNW2 1.0x0.6, 0.65P** CASE 711BG ISSUE C 

**SCALE 8:1** 

**==> picture [80 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
DATE 13 SEP 2019<br>**----- End of picture text -----**<br>


**==> picture [155 x 123] intentionally omitted <==**

**==> picture [108 x 47] intentionally omitted <==**

**==> picture [117 x 61] intentionally omitted <==**

**==> picture [59 x 41] intentionally omitted <==**

## **GENERIC MARKING DIAGRAM*** 

XXM 

XX = Specific Device Code M = Date Code 

*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. Some products may not follow the Generic Marking. 

**DOCUMENT NUMBER: 98AON15241G** 

**DESCRIPTION: X2DFNW2 1.0X0.6, 0.65P** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 1** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **ADDITIONAL INFORMATION** 

**TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales 

**==> picture [232 x 43] intentionally omitted <==**

