NSV60101DMTWTBG
Bipolar Transistor Array, Dual NPN, 60 V, 1 A, 2.27 W
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Bipolar Junction Transistor Arrays - BJT
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Product Range: -
- Qualification: AEC-Q101
- Transistor Mounting: Surface Mount
- Transistor Polarity: Dual NPN
- Power Dissipation NPN: 2.27W
- Power Dissipation PNP: -
- Transistor Case Style: WDFN
- Transition Frequency NPN: 180MHz
- Transition Frequency PNP: -
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 150hFE
- DC Current Gain hFE Min PNP: -
- Continuous Collector Current NPN: 1A
- Continuous Collector Current PNP: -
- Collector Emitter Voltage Max NPN: 60V
- Collector Emitter Voltage Max PNP: -
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.16 € |
| Current stock | 10+ |
| Lead time | 30 days |
Updated at March 18, 2026
