NSV60101DMR6T1G
Bipolar Transistor Array, Dual NPN, 60 V, 1 A, 530 mW
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Bipolar Junction Transistor Arrays - BJT
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2024)
- No. of Pins: 6Pins
- Product Range: -
- Qualification: AEC-Q101
- Transistor Mounting: Surface Mount
- Transistor Polarity: Dual NPN
- Power Dissipation NPN: 530mW
- Power Dissipation PNP: -
- Transistor Case Style: SC-74
- Transition Frequency NPN: 200MHz
- Transition Frequency PNP: -
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 100hFE
- DC Current Gain hFE Min PNP: -
- Continuous Collector Current NPN: 1A
- Continuous Collector Current PNP: -
- Collector Emitter Voltage Max NPN: 60V
- Collector Emitter Voltage Max PNP: -
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.096 € |
| Current stock | 10+ |
| Lead time | 30 days |
Updated at March 18, 2026
