Illustrative purposes only
NSV40302PDR2G
Bipolar Transistor Array, Complementary NPN and PNP, SOIC
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Bipolar Junction Transistor Arrays - BJT
- Product variants: No other variants available. No other names.
- No. of Pins: 8Pins
- Transistor Mounting: Surface Mount
- Transistor Polarity: Complementary NPN and PNP
- Power Dissipation NPN: 783mW
- Power Dissipation PNP: 783mW
- Transistor Case Style: SOIC
- Transition Frequency NPN: 100MHz
- Transition Frequency PNP: 100MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 200hFE
- DC Current Gain hFE Min PNP: 200hFE
- Continuous Collector Current NPN: 3A
- Continuous Collector Current PNP: 3A
- Collector Emitter Voltage Max NPN: 40V
- Collector Emitter Voltage Max PNP: 40V
| Delivery and price | |
|---|---|
| Units per pack | 2500 |
| Price | 0.394 € |
| Current stock | N/A |
| Lead time | 30 days |
Datasheet
|
|---|