NSV40301MDR2G

Bipolar Transistor Array, Dual NPN, 40 V, 3 A, 783 mW

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Manufacturer: ONSEMI
Product type: Bipolar Junction Transistor Arrays - BJT
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Product Range: -
Qualification: AEC-Q101
Transistor Mounting: Surface Mount
Transistor Polarity: Dual NPN
Power Dissipation NPN: 783mW
Power Dissipation PNP: -
Transistor Case Style: SOIC
Transition Frequency NPN: 100MHz
Transition Frequency PNP: -
Operating Temperature Max: 150°C
DC Current Gain hFE Min NPN: 200hFE
DC Current Gain hFE Min PNP: -
Continuous Collector Current NPN: 3A
Continuous Collector Current PNP: -
Collector Emitter Voltage Max NPN: 40V
Collector Emitter Voltage Max PNP: -

Delivery and price
Units per pack	2500
Price	0.247 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 18, 2026