Illustrative purposes only
NST65011MW6T1G
Bipolar Transistor Array, Dual NPN, 65 V, 100 mA, 380 mW, 0.9 hFE, SOT-363
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Bipolar Junction Transistor Arrays - BJT
- Product variants: No other variants available. No other names.
- Power Dissipation NPN: 380mW
- Transition Frequency NPN: 100MHz
- DC Current Gain hFE Min NPN: 200hFE
- Continuous Collector Current NPN: 100mA
- Collector Emitter Voltage Max NPN: 65V
| Delivery and price | |
|---|---|
| Units per pack | 45000 |
| Price | 0.078 € |
| Current stock | 7435 |
| Lead time | 7 days |