NST3946DP6T5G

Bipolar Transistor Array, Complementary NPN and PNP, 40 V, 40 V, 200 mA, 200 mA, 240 mW

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Manufacturer: ONSEMI
Product type: Bipolar Junction Transistor Arrays - BJT
Transistor Polarity:N and P Complement; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:240mW; DC Collector Current:200mA; DC Current Gain hFE:30hFE; Transistor Case
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Product Range: -
Qualification: -
Transistor Mounting: Surface Mount
Transistor Polarity: Complementary NPN and PNP
Power Dissipation NPN: 240mW
Power Dissipation PNP: 240mW
Transistor Case Style: SOT-963
Transition Frequency NPN: 200MHz
Transition Frequency PNP: 250MHz
Operating Temperature Max: 150°C
DC Current Gain hFE Min NPN: 30hFE
DC Current Gain hFE Min PNP: 30hFE
Continuous Collector Current NPN: 200mA
Continuous Collector Current PNP: 200mA
Collector Emitter Voltage Max NPN: 40V
Collector Emitter Voltage Max PNP: 40V

Delivery and price
Units per pack	5000
Price	0.049 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 18, 2026