NST30010MXV6T1G

Bipolar Transistor Array, Dual PNP, 30 V, 100 mA

⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.

Manufacturer: ONSEMI
Product type: Bipolar Junction Transistor Arrays - BJT
Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-30V; Power Dissipation Pd:661mW; DC Collector Current:-100mA; DC Current Gain hFE:420hFE; Transistor Case Style:SOT
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Product Range: -
Qualification: -
Transistor Mounting: Surface Mount
Transistor Polarity: Dual PNP
Power Dissipation NPN: -
Power Dissipation PNP: 661mW
Transistor Case Style: SOT-563
Transition Frequency NPN: -
Transition Frequency PNP: 100MHz
Operating Temperature Max: 150°C
DC Current Gain hFE Min NPN: -
DC Current Gain hFE Min PNP: 420hFE
Continuous Collector Current NPN: -
Continuous Collector Current PNP: 100mA
Collector Emitter Voltage Max NPN: -
Collector Emitter Voltage Max PNP: 30V

Delivery and price
Units per pack	4000
Price	0.081 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 18, 2026