NSS60601MZ4T1G

Bipolar (BJT) Single Transistor, Low VCE (Sat), NPN, 60 V, 6 A, 710 mW, SOT-223, Surface Mount

⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.

Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:100MHz; Power Dissipation Pd:710mW; DC Collector Current:6A; DC Current Gain hFE:50hFE; Tra
MSL: MSL 1 - Unlimited
SVHC: Lead (25-Jun-2025)
No. of Pins: 4Pins
Product Range: -
Qualification: -
Power Dissipation: 710mW
Transistor Mounting: Surface Mount
Transistor Polarity: NPN
Transition Frequency: 100MHz
Transistor Case Style: SOT-223
DC Current Gain hFE Min: 50hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 6A
Collector Emitter Voltage Max: 60V

Delivery and price
Units per pack	3000
Price	0.224 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 14, 2026