Illustrative purposes only
NSS40302PDR2G
Bipolar Transistor Array, Complementary NPN and PNP, 40 V, 3 A, 783 mW, 200 hFE, SOIC
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Bipolar Junction Transistor Arrays - BJT
- Product variants: No other variants available. No other names.
- Transistor Polarity: Complementary NPN and PNP
- Power Dissipation NPN: 783mW
- Power Dissipation PNP: 783mW
- Transition Frequency NPN: 100MHz
- Transition Frequency PNP: 100MHz
- DC Current Gain hFE Min NPN: 200hFE
- DC Current Gain hFE Min PNP: 200hFE
- Continuous Collector Current NPN: 3A
- Continuous Collector Current PNP: 3A
- Collector Emitter Voltage Max NPN: 40V
- Collector Emitter Voltage Max PNP: 40V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.704 € |
| Current stock | N/A |
| Lead time | 30 days |
Datasheet
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