Illustrative purposes only
NSS40301MDR2G
Bipolar Transistor Array, Dual NPN, 40 V, 3 A, 653 mW, 0.9 hFE, SOIC
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Bipolar Junction Transistor Arrays - BJT
- Product variants: No other variants available. No other names.
- No. of Pins: 8Pins
- DC Current Gain hFE: 0.9hFE
- Transistor Mounting: Surface Mount
- Transistor Polarity: Dual NPN
- DC Collector Current: 3A
- Power Dissipation Pd: 653mW
- Power Dissipation NPN: 653mW
- Transistor Case Style: SOIC
- Transition Frequency NPN: 100MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 180hFE
- Continuous Collector Current NPN: 3A
- Collector Emitter Voltage Max NPN: 40V
- Collector Emitter Voltage V(br)ceo: 40V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.477 € |
| Current stock | 2833 |
| Lead time | 7 days |
Datasheet
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