NSS12100UW3TCG

Bipolar (BJT) Single Transistor, PNP, 12 V, 1 A, 1.1 W, WDFN, Surface Mount

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-12V; Transition Frequency ft:200MHz; Power Dissipation Pd:1.1W; DC Collector Current:-1A; DC Current Gain hFE:75hFE; Tra
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Product Range: -
Qualification: AEC-Q101
Power Dissipation: 1.1W
Transistor Mounting: Surface Mount
Transistor Polarity: PNP
Transition Frequency: 200MHz
Transistor Case Style: WDFN
DC Current Gain hFE Min: 75hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 1A
Collector Emitter Voltage Max: 12V

Delivery and price
Units per pack	3000
Price	0.136 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 14, 2026