NSR30CM3T5G

## NSR30CM3 

## Dual Common Cathode Schottky Barrier Diodes 

These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. 

## **www.onsemi.com** 

## **30 VOLTS DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES** 

## **Features** 

- Extremely Fast Switching Speed 

- Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mA 

- NSVR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

3 Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free Device &S 2 1 **SOT−723 MAXIMUM RATINGS** (TJ = 125 ° C unless otherwise noted) **CASE 631AA STYLE 3 Rating Symbol Value Unit** Reverse Voltage VR 30 Volts 1 2 Forward Power Dissipation PF ANODE ANODE @ TA = 25 ° C 190 mW Derate above 25 ° C 1.9 mW/ ° C 3 CATHODE Forward Current (DC) IF 200 Max mA Junction Temperature TJ 125 Max ° C **MARKING DIAGRAM** Storage Temperature Range Tstg −55 to +150 ° C Thermal Resistance R JA 525 ° C/W 5C D Junction−to−Ambient (Note 1) ~~=—a=~~ Stresses exceeding those listed in the Maximum Ratings table may damage the 1 device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 5C = Specific Device Code 1. FR−4 board with minimum mounting pad. D = Date Code **ORDERING INFORMATION Device Package Shipping**[†] NSR30CM3T5G SOT−723 8000/Tape & Reel (Pb−Free) NSVR30CM3T5G SOT−723 8000/Tape & Reel (Pb−Free) ~~+~~ 

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **NSR30CM3T5G/D** 

© Semiconductor Components Industries, LLC, 2016 **December, 2016 − Rev. 5** 

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## **NSR30CM3** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) (EACH DIODE) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise not|ed) (EACH DI|ODE)||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Reverse Breakdown Voltage<br>(IR= 10�A)|V(BR)R|30|−|−|V|
|Total Capacitance<br>(VR= 1.0 V, f = 1.0 MHz)|CT|−|7.6|10|pF|
|Reverse Leakage<br>(VR= 25 V)|IR|−|0.5|2.0|�A|
|Forward Voltage<br>(IF= 0.1 mA)<br>(IF= 1.0 mA)<br>(IF= 10 mA)<br>(IF= 30 mA)<br>(IF= 100 mA)|VF|−<br>−<br>−<br>−<br>−|0.22<br>0.29<br>0.35<br>0.41<br>0.52|0.24<br>0.32<br>0.40<br>0.50<br>0.80|V|
|Reverse Recovery Time<br>(IF= IR= 10 mA, IR(REC)= 1.0 mA, Figure 1)|trr|−|−|5.0|ns|
|Forward Current (DC)|IF|−|−|200|mA|
|Repetitive Peak Forward Current|IFRM|−|−|300|mA|
|Non−Repetitive Peak Forward Current (t < 1.0 s)|IFSM|−|−|600|mA|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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**NSR30CM3** 

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820  �<br>+10 V 2 k<br>100  � H IF 0.1  � F tr t p T IF<br>0.1  � F 10% t rr T<br>DUT<br>50  �  OUTPUT 50  �  INPUT 90%<br>PULSE SAMPLING iR(REC) = 1 mA<br>GENERATOR OSCILLOSCOPE VR IR OUTPUT PULSE<br>INPUT SIGNAL<br>(IF = IR = 10 mA; measured<br>at iR(REC) = 1 mA)<br>Notes: 1. A 2.0 k �  variable resistor adjusted for a Forward Current (IF) of 10 mA.<br>Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.<br>Notes: 3. tp » trr<br>**----- End of picture text -----**<br>


**Figure 1. Recovery Time Equivalent Test Circuit** 

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100 1000<br>125 ° C TA = 150 ° C<br>85 ° C 100 TA = 125 ° C<br>10 10<br>150 ° C 1.0<br>TA = 85 ° C<br>1.0 0.1<br>25 ° C −40 ° C −55 ° C 0.01 T A = 25 ° C<br>0.1 0.001<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30<br>VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>�<br>, REVERSE CURRENT (<br>, FORWARD CURRENT (mA)IF IR<br>**----- End of picture text -----**<br>


**Figure 2. Forward Voltage** 

**Figure 3. Leakage Current** 

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14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 5 10 15 20 25 30<br>VR, REVERSE VOLTAGE (VOLTS)<br>, TOTAL CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


**Figure 4. Total Capacitance** 

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**NSR30CM3** 

## **PACKAGE DIMENSIONS** 

**SOT−723** CASE 631AA ISSUE D 

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−X− NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME<br>D Y14.5M, 1994.<br>b1 A 2. CONTROLLING DIMENSION: MILLIMETERS.<br>3 −Y− 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD<br>FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM<br>THICKNESS OF BASE MATERIAL.<br>E H E 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD<br>FLASH, PROTRUSIONS OR GATE BURRS.<br>1 2<br>a 2X b MILLIMETERS<br>C DIM MIN NOM MAX<br>2X e 0.08 X Y A 0.45 0.50 0.55<br>SIDE VIEW b 0.15 0.21 0.27<br>TOP VIEW b1 0.25 0.31 0.37<br>C 0.07 0.12 0.17<br>3X L D 1.15 1.20 1.25<br>1 E 0.75 0.80 0.85<br>e 0.40 BSC<br>H E 1.15 1.20 1.25<br>L 0.29 REF<br>L2 0.15 0.20 0.25<br>STYLE 3:<br>3X L2 ys 6 PIN 1. ANODE<br>BOTTOM VIEW  2. 3. ANODECATHODE<br>RECOMMENDED<br>SOLDERING FOOTPRINT*<br>2X<br>0.40<br>2X 0.27<br>“Ar<br>PACKAGE<br>OUTLINE<br>NEE<br>1.50<br>|<br>3X 0.52 pee 0.36<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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