NSR20F40NXT5G

NSR20F40NXT5G 

## Schottky Barrier Diode 

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. 

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## **Features** 

- Very Low Forward Voltage Drop − 550 mV @ 2.0 A 

- Low Reverse Current − 15 A @ 10 V VR 

## **40 V SCHOTTKY BARRIER DIODE** 

- 2.0 A of Continuous Forward Current 

- Power Dissipation of 665 mW with Minimum Trace 

- ESD Rating − Human Body Model: Class 3B ESD Rating − Machine Model: Class C 

- Very High Switching Speed 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Typical Applications** 

- LCD and Keypad Backlighting 

- Camera Photo Flash 

- Buck and Boost dc−dc Converters 

- Reverse Voltage and Current Protection 

- Clamping & Protection 

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1 2<br>CATHODE ANODE<br>2 MARKING<br>DIAGRAM<br>PIN 1<br>2 1<br>20F40<br>DSN2 YYY<br>(0603)<br>CASE 152AB<br>**----- End of picture text -----**<br>


20F40 = Specific Device Code YYY = Year Code 

## **Markets** 

- Mobile Handsets 

- MP3 Players 

- Digital Camera and Camcorders 

- Notebook PCs & PDAs 

- GPS 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Reverse Voltage|VR|40|V|
|Forward Current (DC)|IF|2.0|A|
|Forward Surge Current<br>(60 Hz @ 1 cycle)|IFSM|28|A|
|Repetitive Peak Forward Current<br>(Pulse Wave = 1 sec, Duty Cycle = 66%)|IFRM|4.0|A|
|ESD Rating:<br>Human Body Model<br>Machine Model|ESD|> 8<br>> 400|kV<br>V|



## **ORDERING INFORMATION** 

**Device Package Shipping** † NSR20F40NXT5G DSN2 5000 / Tape & Reel (Pb−Free) ~~ae~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

Publication Order Number: **NSR20F40/D** 

**1** 

© Semiconductor Components Industries, LLC, 2013 **October, 2013 − Rev. 2** 

**NSR20F40NXT5G** 

## **THERMAL CHARACTERISTICS** 

|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|
|Thermal Resistance<br>Junction−to−Ambient (Note 1)<br>Total Power Dissipation @ TA= 25°C|R�JA<br>PD|||213<br>586|°C/W<br>mW|
|Thermal Resistance<br>Junction−to−Ambient (Note 2)<br>Total Power Dissipation @ TA= 25°C|R�JA<br>PD|||80<br>1.56|°C/W<br>W|
|Storage Temperature Range|Tstg|||−40 to +125|°C|
|Junction Temperature|TJ|||+150|°C|



1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick  single sided. Operating to steady state. 

2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick  single sided. Operating to steady state. 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

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Characteristic Symbol Min Typ Max Unit<br>Reverse Leakage IR � A<br>(VR = 10 V) 15<br>(VR = 40 V) 150<br>Forward Voltage VF V<br>(IF = 1.0 A) 0.47<br>(IF = 2.0 A) 0.55<br>100,000<br>150 ° C<br>1<br>10,000<br>1000 125 ° C 125 ° C<br>100 75 ° C 0.1<br>10 150 ° C<br>25 ° C<br>1<br>0.01<br>0.1 −25 ° C<br>75 ° C 25 ° C −25 ° C<br>0.01<br>0.001 0.001<br>0 5 10 15 20 25 30 35 40 0 0.1 0.2 0.3 0.4 0.5 0.6<br>VR, REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V)<br>A)<br>�<br>, FORWARD CURRENT (A)<br>, REVERSE CURRENT (IR IF<br>**----- End of picture text -----**<br>


**Figure 1. Reverse Current vs. Reverse Voltage** 

**Figure 2. Forward Current vs. Forward Voltage** 

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400<br>350 T A  = 25 ° C<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 5 10 15 20 25 30 35 40<br>VR, REVERSE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 3. Capacitance** 

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**2** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**DSN2, 1.6x0.8, 0.9P, (0603)** CASE 152AB ISSUE C 

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DATE 30 APR 2017<br>NOTES:<br>0.05 C 1. DIMENSIONING AND TOLERANCING PER<br>ASME Y14.5M, 1994.<br>D A B 2. CONTROLLING DIMENSION: MILLIMETERS.<br>MILLIMETERS<br>DIM MIN MAX<br>0 E A1A 0.25−−− 0.310.05<br>ep 0.05 C Db 0.551.60 BSC0.65<br>TOP VIEW E 0.80 BSC<br>L 1.45 1.55<br>0.05 C L2 0.90 1.00<br>4 L3 0.25 0.35<br>ee = =<br>A GENERIC GENERIC<br>0.05 C MARKING DIAGRAM1* MARKING DIAGRAM2*<br>a A1 Hr C [SEATING] PLANE PIN 1 PIN 1<br>SIDE VIEW<br>XXXX<br>XXM<br>YYY<br>0.05 C A B<br>O man 1<br>L XXXX = Specific Device Code XX = Specific Device Code<br>L/2 YYY = Year Code M = Date Code<br>b<br>*This information is generic. Please refer<br>1 0.05 C A B to device data sheet for actual partmarking. Pb−Free indicator, “G”, may<br>L2 or not be present. Some products may<br>L3 not follow the Generic Marking.<br>BOTTOM VIEW CATHODE BAND MONTH<br>**----- End of picture text -----**<br>


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SCALE 8:1<br>**----- End of picture text -----**<br>


## **CODING** 

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MOUNTING FOOTPRINT*<br>1.70<br>0.52 0.80<br>PIN 1<br>0.70 #8<br>1.05 ~<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


See Application Note AND8464/D for more mounting details 

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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NOV OCT<br>DEC<br>SEP<br>XXXX DEVICE CODE<br>JUN<br>MAR YYY YEAR CODE<br>FEB<br>JAN hart<br>XXXX<br>(EXAMPLE)<br>Y09<br>INDICATES AUG 2009<br>**----- End of picture text -----**<br>


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|||
|---|---|
|DOCUMENT NUMBER:|98AON40452E|
|DESCRIPTION:|DSN2, 1.6X0.8, 0.9P, (0603)|

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Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

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