NSR20F20NXT5G

NSR20F20 

## Schottky Barrier Diode 

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. 

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## **Features** 

- Low Forward Voltage Drop − 450 mV @ 2.0 A 

- Low Reverse Current − 30 A @ 10 V VR 

## **20 V SCHOTTKY BARRIER DIODE** 

- 2.0 A of Continuous Forward Current 

- Power Dissipation of 665 mW with Minimum Trace 

- ESD Rating − Human Body Model: Class 3B ESD Rating − Machine Model: Class C 

- High Switching Speed 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Typical Applications** 

- LCD and Keypad Backlighting 

- Camera Photo Flash 

- Buck and Boost dc−dc Converters 

- Reverse Voltage and Current Protection 

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1 2<br>CATHODE ANODE<br>2 MARKING<br>DIAGRAM<br>PIN 1<br>2 1<br>20F20<br>DSN2<br>YYY<br>(0603)<br>CASE 152AB<br>20F20 = Specific Device Code<br>YYY = Year Code<br>**----- End of picture text -----**<br>


- Clamping & Protection 

## **Markets** 

- Mobile Handsets 

- MP3 Players 

- Digital Camera and Camcorders 

- Notebook PCs & PDAs 

- GPS 

## **MAXIMUM RATINGS** 

**ORDERING INFORMATION** 

**Device Package Shipping** † NSR20F20NXT5G DSN2 5000 / Tape & Reel (Pb−Free) ~~iP~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Reverse Voltage|VR|20|V|
|Forward Current (DC)|IF|2.0|A|
|Forward Surge Current (60 Hz @ 1 cycle)|IFSM|28|A|
|Repetitive Peak Forward Current<br>(Pulse Wave = 1 sec, Duty Cycle = 66%)|IFRM|4.0|A|
|ESD Rating:<br>Human Body Model<br>Machine Model|ESD|> 8<br>> 400|kV<br>V|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

Publication Order Number: **NSR20F20/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **April, 2016 − Rev. 3** 

**NSR20F20** 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Thermal Resistance<br>Junction−to−Ambient (Note 1)<br>Total Power Dissipation @ TA= 25°C|R�JA<br>PD|||213<br>586|°C/W<br>mW|
|Thermal Resistance<br>Junction−to−Ambient (Note 2)<br>Total Power Dissipation @ TA= 25°C|R�JA<br>PD|||80<br>1.56|°C/W<br>W|
|Storage Temperature Range|Tstg|||−40 to +125|°C|
|Junction Temperature|TJ|||+150|°C|



1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick  single sided. Operating to steady state. 

2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick  single sided. Operating to steady state. 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise note|d)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Reverse Leakage<br>(VR= 10 V)<br>(VR= 20 V)|IR|||30<br>150|�A|
|Forward Voltage<br>(IF= 1.0 A)<br>(IF= 2.0 A)|VF||0.390<br>0.450|0.420<br>0.470|V|
|Reverse Recovery Time<br>(IF= IR= 10 mA, IR(REC)= 1.0 mA, Figure 4)|trr||80||ns|



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**2** 

**NSR20F20** 

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10 100,000<br>150 ° C<br>10,000<br>TJ = 125 ° C 125 ° C<br>1 1,000<br>100 75 ° C<br>TJ = 150 ° C<br>0.1 10<br>1 25 ° C<br>75 ° C<br>0.01 0.1<br>25 ° C<br>−25 ° C 0.01 −25 ° C<br>0.001 0.001<br>0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0 4 8 12 16 20<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>A)<br>�<br>, REVERSE CURRENT (<br>IR<br>, FORWARD CURRENT (A)<br>IF<br>**----- End of picture text -----**<br>


**Figure 1. Forward Voltage** 

**Figure 2. Typical Reverse Current** 

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500<br>TA = 25 ° C<br>400<br>300<br>200<br>100<br>0<br>0 4 8 12 16 20<br>VR, REVERSE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 3. Typical Capacitance** 

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820 �<br>IF<br>+10 V 2.0 k 0.1 �F tr t p t<br>100 �H IF 10% t rr t<br>0.1 �F<br>D.U.T. 90%<br>50 � OUTPUT 50 � INPUT iR(REC) = 1.0 mA<br>IR<br>PULSE SAMPLING VR OUTPUT PULSE<br>GENERATOR OSCILLOSCOPE INPUT SIGNAL<br>(IF = IR = 10 mA; MEASURED<br>at iR(REC) = 1.0 mA)<br>Notes: 1. A 2.0 k �  variable resistor adjusted for a Forward Current (IF) of 10 mA.<br>Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.<br>Notes: 3. tp » trr<br>**----- End of picture text -----**<br>


**Figure 4. Recovery Time Equivalent Test Circuit** 

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**3** 

**NSR20F20** 

## **PACKAGE DIMENSIONS** 

**DSN2, 1.6x0.8, 0.9P, (0603)** CASE 152AB ISSUE B 

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NOTES:<br>0.05 C 1. DIMENSIONING AND TOLERANCING PER<br>ASME Y14.5M, 1994.<br>D A B 2. CONTROLLING DIMENSION: MILLIMETERS.<br>MILLIMETERS<br>lors DIM MIN MAX<br>E A1A 0.25−−− 0.310.05<br>| 0.05 C Db 0.551.60 BSC0.65<br>TOP VIEW E 0.80 BSC<br>L 1.45 1.55<br>0.05 C L2 0.90 1.00<br>4 L3 0.25 0.35<br>co SE<br>A<br>0.05 C CATHODE BAND MONTH CODING<br>A1<br>a Hy C [SEATING] PLANE NOV OCT<br>DEC<br>SIDE VIEW<br>SEP<br>0.05 C A B XXXX DEVICE CODE<br>L JUN<br>L/2 MAR YYY YEAR CODE<br>b<br>on<br>FEB<br>JAN<br>1 0.05 C A B<br>L2 XXXX<br>L3 (EXAMPLE)<br>BOTTOM VIEW Y09<br>MOUNTING FOOTPRINT*<br>INDICATES AUG 2009<br>1.70<br>0.52 0.80<br>PIN 1<br>0.70 Ps<br>1.05 a<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


See Application Note AND8464/D for more mounting details 

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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**4** 

**NSR20F20/D**