NSR2030QMUTAG.

## NSR2030QMUTAG 

## 2A, 30V Schottky Full Bridge 

These full bridge Schottky barrier diodes are designed for the rectification of the high speed signal of wireless charging. The NSR2030QMUTAG has a very low forward voltage that will reduce conduction loss. It is housed in a UDFN 3.5 x 3.5 x 0.5 mm package that is ideal for space constrained wireless applications. 

## **Features** 

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- Extremely Fast Switching Speed 

- Low Forward Voltage − 0.54 V (Typ) @ IF = 2 A 

- These Devices are Pb−Free, Halogen Free and are RoHS Compliant 

## **Typical Applications** 

- Low Voltage Full Bridge Rectification & Wireless Charging 

## **MARKING DIAGRAM** 

1 2030 **UDFN4 3.5x3.5** AYWW **CASE 517DA** 

**MAXIMUM RATINGS** (TJ = 125 ° C unless otherwise noted) (Note 1) 

||~~es~~|~~ee~~||
|---|---|---|---|
|**Rating**<br>~~es~~|**Symbol**<br>~~es~~<br>~~es~~<br>~~ee~~|**Value**<br>~~es~~<br>~~ee~~<br>~~ee~~|**Unit**<br>~~es~~|
|Reverse Voltage<br>~~ee~~|VR<br>~~es ~~<br>~~ee~~<br>~~ee~~|30<br> ~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~|
|Forward Current (DC)<br>~~ee~~|IF<br>~~ee~~|2.0<br>~~ee~~|A|
|Forward Current Surge Peak<br>(60 Hz, 1 cycle)<br>~~ee~~|IFSM|12.5|A|
|Non−Repetitive Peak Forward Current<br>(Square Wave, TJ= 25°C prior to surge)<br>t = 1 s<br>t = 1 ms<br>t = 1 s<br>~~ee~~|IFSM|40<br>10<br>3.0|A|



2030 = Specific Device Code A = Assembly Location Y = Year WW = Work Week | = Pb−Free Package (Note: Microdot may be in either location) 

## **PIN CONNECTIONS** 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. All specifications pertain to a single diode. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**|~~es~~|~~es~~||
|---|---|---|---|
|**Characteristic**<br>~~es~~|**Symbol**<br>~~es~~<br>~~es~~|**Max**<br>~~es~~<br>~~es~~|**Unit**<br>~~es~~|
|Total Device Dissipation FR-5 Board<br>TA= 25°C<br>Derate above 25°C<br>~~PT~~|PD<br>(Note 2)<br>~~es~~<br>~~PT~~|2.08<br>20.8<br>~~es~~|W<br>mW/°C|
|Thermal Resistance Junction to Ambient|R JA<br>(Note 2)|48|°C/W|
|Total Device Dissipation FR-5 Board<br>TA= 25°C<br>Derate above 25°C|PD<br>(Note 3)|0.75<br>7.6|W<br>mW/°C|
|Thermal Resistance Junction to Ambient|R JA<br>(Note 3)|132|°C/W|
|Total Device Dissipation FR-5 Board<br>TA= 25°C<br>Derate above 25°C|PD<br>(Note 4)|0.87<br>8.8|W<br>mW/°C|
|Thermal Resistance Junction to Ambient|R JA<br>(Note 4)|114|°C/W|
|Junction Temperature<br>~~ee~~|TJ<br>~~ee~~|+125<br>~~ee~~|°C<br>~~ee~~|
|Storage Temperature Range<br>~~ee~~|Tstg<br>~~ee~~|−55 to<br>+150<br>~~ee~~|°C<br>~~ee~~|



## **DEVICE SCHEMATIC** 

## **ORDERING INFORMATION** 

|**Device**<br>**Package**<br>**Shipping**†|
|---|
|NSR2030QMUTAG<br>UDFN4<br>3000 / Tape &|
|(Pb−Free)<br>Reel|
|†For information on tape and reel specifications,<br>including part orientation and tape sizes, please<br>refer to our Tape and Reel Packaging Specification<br>Brochure, BRD8011/D.|



3. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm[2] , 1 oz. copper trace, still air. 

4. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm[2] , 2 oz. copper trace, still air. 

Publication Order Number: 

© Semiconductor Components Industries, LLC, 2015 **September, 2015 − Rev. 0** 

**NSR2030QMU/D** 

## **NSR2030QMUTAG** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) (Note 5) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted|) (Note 5)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Reverse Breakdown Voltage (IR= 1.0 mA)|V(BR)|30|−|−|V|
|Reverse Leakage (VR= 30 V)|IR|−|5.0|20|�A|
|Forward Voltage (IF= 0.5 A)|VF|−|0.41|0.455|V|
|Forward Voltage (IF= 1.0 A)|VF|−|0.46|0.55|V|
|Forward Voltage (IF= 2.0 A)|VF|−|0.54|0.65|V|
|Reverse Recovery Time<br>(IF= IR= 10 mA, IR(REC)= 1.0 mA)|trr|−|34|−|ns|
|Input Capacitance (pins 1 to 3) (VR= 1.0 V, f = 1.0 MHz)|CT|−|102|−|pF|



5. All specifications pertain to a single diode. 

**==> picture [484 x 130] intentionally omitted <==**

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820 �<br>IF<br>+10 V 2.0 k 0.1 �F tr t p t<br>100 �H IF 10% t rr t<br>0.1 �F<br>D.U.T. 90%<br>50 � OUTPUT 50 � INPUT iR(REC) = 1.0 mA<br>IR<br>PULSE SAMPLING VR OUTPUT PULSE<br>GENERATOR OSCILLOSCOPE INPUT SIGNAL<br>(IF = IR = 10 mA; MEASURED<br>at iR(REC) = 1.0 mA)<br>**----- End of picture text -----**<br>


Notes: 1. A 2.0 k � variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr 

**Figure 1. Recovery Time Equivalent Test Circuit** 

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**NSR2030QMUTAG** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [494 x 611] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 1.0E−01 150 ° C<br>1.0E−02<br>1 1.0E−03 125 ° C<br>1.0E−04 85 ° C<br>1.0E−05<br>0.1 25 ° C<br>1.0E−06<br>150 ° C<br>1.0E−07<br>0.01 −55 ° C<br>1.0E−08<br>1.0E−09<br>125 ° C 85 ° C 25 ° C −55 ° C<br>0.001 1.0E−10<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 5 10 15 20 25 30<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 1. Forward Voltage Figure 2. Reverse Leakage<br>110 45<br>TA = 25 ° C Based on square wave currents<br>100 40 TJ = 25 ° C prior to surge<br>90 35<br>30<br>80<br>25<br>70<br>20<br>60<br>15<br>50<br>10<br>40 5<br>30 0<br>0 5 10 15 20 25 30 0.001 0.01 0.1 1 10 100 1000<br>VR, REVERSE VOLTAGE (V) Tp, PULSE ON TIME (ms)<br>Figure 3. Input Capacitance Figure 4. Forward Surge Current<br>100<br>D = 0.5<br>10 0.2<br>0.1<br>0.05<br>0.02<br>1<br>0.01<br>SINGLE PULSE<br>0.1<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (s)<br>A)<br>�<br>, FORWARD CURRENT (A) , REVERSE CURRENT (<br>IF IR<br>, INPUT CAPACITANCE (pF)CI<br>, FORWARD SURGE MAX CURRENT (A)<br>IFSM<br>r(t)C/W)<br>( °<br>**----- End of picture text -----**<br>


**Figure 5. Thermal Response** 

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**NSR2030QMUTAG** 

## **PACKAGE DIMENSIONS** 

**UDFN4 3.5x3.5, 1.55P** CASE 517DA ISSUE A 

NOTES: 

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NOTES:<br>D A B 1. DIMENSIONING AND TOLERANCING PER<br>ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>PIN ONE 3. DIMENSION b APPLIES TO PLATED<br>INDICATOR -o-pO R TERMINAL AND IS MEASURED BETWEEN<br>E 0.05 AND 0.15 MM FROM THE TERMINAL TIP.<br>ÍÍ 4. COPLANARITY APPLIES TO THE EXPOSED<br>2X 0.10 C PADS AS WELL AS THE TERMINALS.<br>an ÍÍ tl ? 5. POSITIONAL TOLERANCE APPLIES TO ALLOF THE EXPOSED PADS.<br>2X ei 0.10 C TOP VIEW MILLIMETERS<br>DIM MIN MAX<br>A A 0.45 0.55<br>A3 A1 0.00 0.05<br>0.05 C A1 A3 0.13 REF<br>b 0.35 0.45<br>S m 0.05 a C D2D 1.153.50 BSC1.25<br>NOTE 4 SIDE VIEW t C SEATINGPLANE D3 1.35 1.45<br>E 3.50 BSC<br>E2 2.25 2.35<br>0.10 M C A B E3 0.95 1.05<br>F e 1.55 BSC<br>2X D3 D2 NOTE 5 F 0.925 BSC<br>1 2 F 1 2 GL 0.350.58 BSC0.55<br>E2<br>2X E3 RECOMMENDED<br>SOLDERING FOOTPRINT*<br>4X L 4 3 4X b 0.10 M C NOTE 5 A B Gi G e/2 4 3 PITCH1.55 :<br>0.10 M C A B e 1.60 1.40 2X<br>4X<br>BOTTOM VIEW 0.05 M C NOTE 3 SUPPLEMENTAL 0.56 0.63<br>BOTTOM VIEW<br>0.75<br>cet<br>2.52 3.80<br>1.17<br>1.20 1 2X<br>0.925 0.50<br>Foal 0.925<br>DIMENSIONS: MILLIMETERS<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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**NSR2030QMU/D** 

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