NSR1030QMUTWG

## NSR1030QMUTWG 

## Schottky Full Bridge, 1A, 30V 

These full bridge Schottky barrier diodes are designed for the rectification of the high speed signal of wireless charging. The NSR1030QMUTWG has a very low forward voltage that will reduce conduction loss. It is housed in a UDFN 3.0 x 3.0 x 0.5 mm package that is ideal for space constrained wireless applications. 

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## **Features** 

- Extremely Fast Switching Speed 

- Low Forward Voltage − 0.49 V (Typ) @ IF = 1 A 

- These Devices are Pb−Free, Halogen Free and are RoHS Compliant 

## **Typical Applications** 

- Low Voltage Full Bridge Rectification & Wireless Charging 

**MAXIMUM RATINGS** (TJ = 125 ° C unless otherwise noted) (Note 1) 

|~~ee~~|~~e~~~~**s**~~|||
|---|---|---|---|
|**Rating**<br>~~ee~~<br>~~ee~~|**Symbol**<br>~~ee~~<br>~~e~~~~**s**~~<br>~~e~~|**Value**<br>~~ee~~|**Unit**<br>~~ee~~|
|Reverse Voltage<br>~~ee~~|VR<br>~~e~~~~**s**~~<br>~~e~~|30|V|
|Forward Current (DC)<br>~~ee~~|IF<br>~~e~~~~**s**~~<br>~~e~~|1.0|A|
|Forward Current Surge Peak<br>(60 Hz, 1 cycle)|IFSM|12|A|
|Non−Repetitive Peak Forward Current<br>(Square Wave, TJ= 25°C prior to surge)<br>t = 1 s<br>t = 1 ms<br>t = 1 s|IFSM|40<br>10<br>3.0|A|



## **MARKING DIAGRAM** 

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1<br>1030<br>UDFN4 3x3<br>AYWW<br>CASE 517DB<br>**----- End of picture text -----**<br>


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1030 = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


## **PIN CONNECTIONS** 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. All specifications pertain to a single diode. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**|~~es~~|~~es~~||
|---|---|---|---|
|**Characteristic**<br>~~es~~|**Symbol**<br>~~es~~<br>~~es~~|**Max**<br>~~es~~<br>~~es~~|**Unit**<br>~~es~~|
|Total Device Dissipation<br>TA= 25°C<br>Derate above 25°C<br>~~eT~~|PD<br>(Note 2)<br>~~es~~<br>~~eT~~|1.80<br>18<br>~~es~~|W<br>mW/°C|
|Thermal Resistance Junction to Ambient|R JA<br>(Note 2)|55.5|°C/W|
|Total Device Dissipation<br>TA= 25°C<br>Derate above 25°C|PD<br>(Note 3)|0.70<br>7.0|W<br>mW/°C|
|Thermal Resistance Junction to Ambient|R JA<br>(Note 3)|142|°C/W|
|Total Device Dissipation<br>TA= 25°C<br>Derate above 25°C|PD<br>(Note 4)|0.80<br>8.0|W<br>mW/°C|
|Thermal Resistance Junction to Ambient|R JA<br>(Note 4)|125|°C/W|
|Junction Temperature|TJ|+125|°C|
|Storage Temperature Range|Tstg|−55 to<br>+150|°C|



2. 4 Layer JEDEC JESD51.7 FR−4 @ 10 mm[2] , 1 oz. copper trace, still air. 

## **DEVICE SCHEMATIC** 

## **ORDERING INFORMATION** 

|**Device**<br>**Package**<br>**Shipping**†<br>†For information on tape and reel specifications,<br>NSR1030QMUTWG<br>UDFN4<br>(Pb−Free)<br>3000 / Tape &<br>Reel|
|---|
|including part orientation and tape sizes, please|
|refer to our Tape and Reel Packaging Specification|
|Brochure, BRD8011/D.|



3. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm[2] , 1 oz. copper trace, still air. 

4. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm[2] , 2 oz. copper trace, still air. 

Publication Order Number: 

© Semiconductor Components Industries, LLC, 2015 **May, 2017 − Rev. 1** 

**NSR1030QMU/D** 

**NSR1030QMUTWG** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) (Note 5) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted|) (Note 5)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Reverse Breakdown Voltage (IR= 1.0 mA)|V(BR)|30|−|−|V|
|Reverse Leakage (VR= 30 V)|IR|−|4.0|20|�A|
|Forward Voltage (IF= 0.5 A)|VF|−|0.43|0.49|V|
|Forward Voltage (IF= 1.0 A)|VF|−|0.49|0.60|V|
|Reverse Recovery Time<br>(IF= IR= 10 mA, IR(REC)= 1.0 mA)|trr|−|25|−|ns|
|Input Capacitance (pins 1 to 3) (VR= 1.0 V, f = 1.0 MHz)|CT|−|70|−|pF|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. All specifications pertain to a single diode. 

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820 �<br>IF<br>+10 V 2.0 k 0.1 �F tr t p t<br>100 �H IF 10% t rr t<br>0.1 �F<br>D.U.T. 90%<br>50 � OUTPUT 50 � INPUT iR(REC) = 1.0 mA<br>IR<br>PULSE SAMPLING VR OUTPUT PULSE<br>GENERATOR OSCILLOSCOPE INPUT SIGNAL<br>(IF = IR = 10 mA; MEASURED<br>at iR(REC) = 1.0 mA)<br>**----- End of picture text -----**<br>


Notes: 1. A 2.0 k � variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr 

**Figure 1. Recovery Time Equivalent Test Circuit** 

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**2** 

**NSR1030QMUTWG** 

## **TYPICAL CHARACTERISTICS** 

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1 1.0E−01 150 ° C<br>1.0E−02<br>1.0E−03 125 ° C<br>0.1 1.0E−04 85 ° C<br>1.0E−05<br>1.0E−06 25 ° C<br>150 ° C 1.0E−07<br>0.01<br>1.0E−08<br>1.0E−09<br>−55 ° C<br>125 ° C 85 ° C 25 ° C −55 ° C 1.0E−10<br>0.001 1.0E−11<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 1. Forward Voltage Figure 2. Reverse Leakage<br>80 45<br>70 TA = 25 ° C 40 Based on square wave currentsTJ = 25 ° C prior to surge<br>35<br>60 30<br>25<br>50<br>20<br>40 15<br>10<br>30<br>5<br>20 0<br>0 5 10 15 20 25 30 0.001 0.01 0.1 1 10 100 1000<br>VR, REVERSE VOLTAGE (V) Tp, PULSE ON TIME (ms)<br>Figure 3. Input Capacitance Figure 4. Forward Surge Current<br>100<br>D = 0.5<br>0.2<br>10 0.1<br>0.05<br>0.02<br>1<br>0.01<br>SINGLE PULSE<br>0.1<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (s)<br>A)<br>�<br>, FORWARD CURRENT (A) , REVERSE CURRENT (<br>IF IR<br>, INPUT CAPACITANCE (pF)CI<br>, FORWARD SURGE MAX CURRENT (A)<br>IFSM<br>r(t)C/W)<br>( °<br>**----- End of picture text -----**<br>


**Figure 5. Thermal Response** 

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**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**UDFN4 3.0x3.0, 1.30P** CASE 517DB ISSUE A 

**SCALE 2:1** 

## DATE 17 SEP 2014 

NOTES: 

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NOTES:<br>D A B 1. DIMENSIONING AND TOLERANCING PER<br>ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>PIN ONE 3. DIMENSION b APPLIES TO PLATED<br>INDICATOR new t TERMINAL AND IS MEASURED BETWEEN<br>E 0.05 AND 0.15 MM FROM THE TERMINAL TIP.<br>ÍÍ 4. COPLANARITY APPLIES TO THE EXPOSED<br>2X 0.10 C PADS AS WELL AS THE TERMINALS.<br>ao ÍÍ t 3 5. POSITIONAL TOLERANCE APPLIES TO ALL<br>OF THE EXPOSED PADS.<br>2X 0.10 C<br>e ty TOP VIEW MILLIMETERS<br>A DIM MIN MAX<br>A3 A 0.45 0.55<br>0.05 C A1 A1 0.00 0.05<br>A3 0.13 REF<br>mo_4t b 0.35 0.45<br>0.05 C D 3.00 BSC<br>Soy NOTE 4 SIDE VIEW Y C SEATINGPLANE D3D2 1.150.95 1.251.05<br>E 3.00 BSC<br>E2 1.80 1.90<br>0.10 M C A B E3 0.75 0.85<br>F E4 0.65 0.75<br>2X D3 D2 NOTE 5 e 1.30 BSC<br>F1 F 0.75 BSC<br>1 2 1 2 F1 0.70 BSC<br>G 0.48 BSC<br>sO E2 , 2 L 0.35 0.55<br>E3<br>0.10 M C A B GENERIC<br>E4 4 3 NOTE 5 G 4 3 MARKING DIAGRAM*<br>4X L 4X b e/2 1<br>0.10 M C A B e XXXX<br>BOTTOM VIEW 0.05 M C NOTE 3 SUPPLEMENTAL AYWW<br>BOTTOM VIEW<br>RECOMMENDED XXXX = Specific Device Code<br>SOLDERING FOOTPRINT* A = Assembly Location<br>Y = Year<br>1.30<br>PITCH WW = Work Week<br>1.40 1.20 2X = Pb−Free Package<br>0.554X 0.63 (Note: Microdot may be in either location)<br>*This information is generic. Please refer<br>to device data sheet for actual part<br>1.17 marking.<br>2.02 3.30 Pb−Free indicator, “G” or microdot “ ”,<br>0.87<br>may or may not be present.<br>1.00 1 2X<br>0.70 0.50<br>real 0.75 5 |<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


   1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 

   2. CONTROLLING DIMENSION: MILLIMETERS. 

   3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 

   - 0.05 AND 0.15 MM FROM THE TERMINAL TIP. 

   4. COPLANARITY APPLIES TO THE EXPOSED PADS AS WELL AS THE TERMINALS. 

   5. POSITIONAL TOLERANCE APPLIES TO ALL 

- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON91435F** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: UDFN4 3.0X3.0, 1.30P PAGE 1 OF 1** ~~es~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

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