NSR1020MW2T3G

NSR1020MW2 

## Schottky Barrier Diodes 

This Schottky Barrier Diode in the SOD−323 package offers extremely low Vf performance. The low forward voltage makes them capable of handling high current in a very small package. The resulting device is ideally suited for application as a blocking diode in charging applications or as part of discrete buck converter or discrete boost converter. As part of a buck conversion circuit, a boost conversion circuit or a charging circuit the low Vf drop of the Schottky improves the efficiency of the overall device by consuming less power in the forward mode. 

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## **HIGH CURRENT SCHOTTKY BARRIER DIODE** 

## **Features** 

- Low Forward Voltage − 0.24 Volts (Typ) @ IF = 10 mAdc 

- High Current Capability 

- ESD Rating − Human Body Model: CLASS 3B − Machine Model: C 

- NSVR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

**MAXIMUM RATINGS** (TJ = 125 ° C unless otherwise noted) 

|**Rating**<br>~~==~~|**Symbol**<br>~~==~~|**Value**<br>~~==~~|**Unit**<br>~~==~~|
|---|---|---|---|
|Reverse Voltage<br>~~==~~|VR<br>~~==~~|20<br>~~==~~|Vdc<br>~~==~~|
|Peak Revese Voltage<br>~~==~~|VRM<br>~~==~~|30<br>~~==~~|V<br>~~==~~|
|Forward Power Dissipation<br>@ TA= 25°C<br>Derate above 25°C<br>~~==~~|PF<br>~~==~~|200<br>2.0<br>~~==~~|mW<br>mW/°C<br>~~==~~|
|Forward Current (DC)<br>Continuous<br>~~==~~|IF<br>~~==~~|1<br>~~==~~|A<br>~~==~~|
|Forward Current<br>t = 8.3 ms Half Sinewave<br>~~==~~|IF<br>~~==~~|5<br>~~==~~|A<br>~~==~~|
|Repetitive Forward Current<br>period = 1.5 s, Duty Cycle = 66.7%<br>~~==~~|IFRM<br>~~==~~|2<br>~~==~~|A<br>~~==~~|
|Junction Temperature<br>~~==~~|TJ<br>~~==~~|125 Max<br>~~==~~|°C<br>~~==~~|
|Storage Temperature Range<br>~~==~~|Tstg<br>~~==~~|−55 to +150<br>~~==~~|°C<br>~~==~~|



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1 2<br>CATHODE ANODE<br>**----- End of picture text -----**<br>


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2 MARKING<br>DIAGRAM<br>—<br>1<br>SOD−323 RE M<br>CASE 477<br>STYLE 1<br>**----- End of picture text -----**<br>


RE = Specific Device Code M = Date Code = Pb−Free Package (Note: Microdot may be in either location) 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|NSR1020MW2T1G|SOD−323<br>(Pb−Free)|3000 / Tape &<br>Reel|
|NSR1020MW2T3G|SOD−323<br>(Pb−Free)|10,000 / Tape &<br>Reel|
|NSVR1020MW2T1G|SOD−323<br>(Pb−Free)|3000 / Tape &<br>Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: 

© Semiconductor Components Industries, LLC, 2016 **March, 2016 − Rev. 3** 

**NSR1020MW2/D** 

## **NSR1020MW2** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Total Capacitance (VR= 5.0 V, f = 1.0 MHz)|CT|−|25|29|pF|
|Reverse Leakage (VR= 15 V)|IR|−|−|40|�Adc|
|Forward Voltage (IF= 1 mAdc)|VF|−|−|0.20|Vdc|
|Forward Voltage (IF= 10 mAdc)|VF|−|−|0.26|Vdc|
|Forward Voltage (IF= 100 mAdc)|VF|−|−|0.33|Vdc|
|Forward Voltage (IF= 500 mAdc)|VF|−|−|0.44|Vdc|
|Forward Voltage (IF= 1000 mAdc)|VF|−|−|0.54|Vdc|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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1000 10000<br>150 ° C<br>125 ° C<br>1000<br>100 °<br>150 C<br>85 ° C<br>100<br>10<br>85 ° C<br>10<br>−55 ° C 25 ° C<br>1 25 ° C −45 ° C 1<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>A)<br>�<br>IF, FORWARD CURRENT (mA) IR, REVERSE CURRENT (<br>**----- End of picture text -----**<br>


**Figure 1. Forward Voltage** 

**Figure 2. Leakage Current** 

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140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 5 10 15 20<br>VR, REVERSE VOLTAGE (V)<br>CT, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 3. Total Capacitance** 

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**2** 

**NSR1020MW2** 

## **PACKAGE DIMENSIONS** 

**SOD−323** CASE 477−02 ISSUE H 

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HE<br>D<br>at,<br>b 1 2 E<br>=<br>A3<br>A<br>C if NOTE 5L A1 C o,<br>NOTE 3<br>SOLDERING FOOTPRINT*<br>**----- End of picture text -----**<br>


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NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. LEAD THICKNESS SPECIFIED PER L/F DRAWING<br>WITH SOLDER PLATING.<br>4. DIMENSIONS A AND B DO NOT INCLUDE MOLD<br>FLASH, PROTRUSIONS OR GATE BURRS.<br>5. DIMENSION L IS MEASURED FROM END OF RADIUS.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 0.80 0.90 1.00 0.031 0.035 0.040<br>A1 0.00 0.05 0.10 0.000 0.002 0.004<br>A3 0.15 REF 0.006 REF<br>b 0.25 0.32 0.4 0.010 0.012 0.016<br>C 0.089 0.12 0.177 0.003 0.005 0.007<br>D 1.60 1.70 1.80 0.062 0.066 0.070<br>E 1.15 1.25 1.35 0.045 0.049 0.053<br>L 0.08 0.003<br>HE 2.30 2.50 2.70 0.090 0.098 0.105<br>Et STYLE 1: + +- 4<br>PIN 1. CATHODE<br> 2. ANODE<br>**----- End of picture text -----**<br>


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0.63<br>0.025 — — ~<br>0.83<br>0.033<br>1.60<br>UU<br>0.063<br>2.85<br>0.112<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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## **PUBLICATION ORDERING INFORMATION** 

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