NSR05T40P2T5G

## NSR05T40P2 

## 500 mA, 40 V Schottky Barrier Diode 

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in spacing saving micro−packaging ideal for space constraint applications. 

## **Features** 

- Low Forward Voltage Drop − 580 mV (Typ.) @ IF = 500 mA 

- Low Reverse Current − 2.0 A (Typ.) @ VR = 40 V 

- 500 mA of Continuous Forward Current 

- ESD Rating: − Human Body Model: Class 3B 

   - Charged Device Model: Class IV 

- High Switching Speed 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

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www.onsemi.com<br>MARKING<br>2 DIAGRAM<br>&<br>1<br>YKM<br>SOD−923<br>CASE 514AB<br>**----- End of picture text -----**<br>


YK = Specific Device Code M = Date Code 

## **Typical Applications** 

- LCD and Keypad Backlighting 

- Camera Photo Flash 

1 2 CATHODE ANODE 

- Buck and Boost dc−dc Converters 

- Reverse Voltage and Current Protection 

- Clamping & Protection 

**MAXIMUM RATINGS** 

**Rating Symbol Value Unit** Reverse Voltage VR 40 V Forward Current (DC) IF 500 mA Forward Surge Current IFSM 3.0 A (60 Hz @ 1 cycle) Repetitive Peak Forward Current IFRM 1.0 A (Pulse Wave = 1 sec, Duty Cycle = 66%) ESD Rating: Human Body Model ESD > 8 kV Charged Device Model > 1 ~~ee~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|NSR05T40P2T5G|SOD−923<br>(Pb−Free)|2 mm Pitch<br>8000/Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **NSR05T40P2/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **August, 2016 − Rev. 2** 

**NSR05T40P2** 

## **THERMAL CHARACTERISTICS** 

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Characteristic Symbol Min Typ Max Unit<br>Thermal Resistance<br>Junction−to−Ambient (Note 1) R � JA 345 ° C/W<br>Total Power Dissipation @ TA = 25 ° C PD 360 mW<br>Thermal Resistance<br>Junction−to−Ambient (Note 2) R � JA 175 ° C/W<br>Total Power Dissipation @ TA = 25 ° C PD 715 mW<br>Junction and Storage Temperature Range TJ, Tstg −55 to +150 ° C<br>1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.<br>2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.<br>1000<br>D = 0.5<br>100 0.2<br>0.1<br>0.05<br>0.02<br>10<br>0.01<br>SINGLE PULSE<br>1<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>PULSE TIME (sec)<br>R(t) (C/W)<br>**----- End of picture text -----**<br>


**Figure 1. Thermal Response (Note 1)** 

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1000<br>D = 0.5<br>100<br>0.2<br>0.1<br>0.05<br>10<br>0.02<br>0.01<br>SINGLE PULSE<br>1<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>PULSE TIME (sec)<br>R(t) (C/W)<br>**----- End of picture text -----**<br>


**Figure 2. Thermal Response (Note 2)** 

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**NSR05T40P2** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise note|d)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Reverse Leakage<br>(VR= 10 V)<br>(VR= 40 V)|IR||0.2<br>2.0|5.0<br>55|�A|
|Forward Voltage<br>(IF= 10 mA)<br>(IF= 100 mA)<br>(IF= 200 mA)<br>(IF= 500 mA)|VF||360<br>450<br>490<br>580|410<br>500<br>550<br>700|mV|
|Total Capacitance<br>(VR= 1.0 V, f = 1.0 MHz)|CT||29||pF|
|Reverse Recovery Time<br>(IF= IR= 10 mA, IR(REC)= 1.0 mA, Figure 3)|trr||8.0||ns|
|Peak Forward Recovery Voltage<br>(IF= 100 mA, tr= 20 ns, Figure 4)|VFRM||560||mV|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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820 �<br>IF<br>+10 V 2.0 k 0.1 �F tr t p t<br>100 �H IF 10% t rr t<br>0.1 �F<br>D.U.T. 90%<br>50 � OUTPUT 50 � INPUT iR(REC) = 1.0 mA<br>IR<br>PULSE SAMPLING VR OUTPUT PULSE<br>GENERATOR OSCILLOSCOPE INPUT SIGNAL<br>(IF = IR = 10 mA; MEASURED<br>at iR(REC) = 1.0 mA)<br>**----- End of picture text -----**<br>


Notes: 1. A 2.0 k � variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr 

**Figure 3. Recovery Time Equivalent Test Circuit** 

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IF tr VF<br>VFRM<br>VF<br>Time Time<br>**----- End of picture text -----**<br>


**Figure 4. Peak Forward Recovery Voltage Definition** 

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**NSR05T40P2** 

## **TYPICAL CHARACTERISTICS** 

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1000 1000<br>150 ° C<br>100<br>100<br>10 125 ° C<br>10 150 ° C<br>125 ° C 1 75 ° C<br>1 0.1<br>75 ° C 0.01 25 ° C<br>0.1<br>25 ° C 0.001<br>−25 ° C<br>0.01 −25 ° C 0.0001<br>−55 ° C −55 ° C<br>0.001 0.00001<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 5 10 15 20 25 30 35 40<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 5. Forward Voltage Figure 6. Leakage Current<br>1000 100<br>1.0<br>1.0<br>10<br>100 0.8<br>0.8<br>0.5<br>0.5<br>0.2<br>1<br>0.2 0.1<br>10 0.1<br>0.1<br>1<br>0.01<br>0.1 0.001<br>0 50 100 150 200 250 300 350 400 450 500 0 5 10 15 20 25 30 35 40<br>IF, FORWARD CURRENT (mA) VR, REVERSE VOLTAGE (V)<br>Figure 7. Average Forward Power Dissipation Figure 8. Average Reverse Power Dissipation<br>40 12<br>35 f = 1.0 MHz Based on square wave currentsTJ = 25TJ = 25J = 25 = 25 ° C prior to surge<br>10<br>30<br>8<br>25<br>20 6<br>15<br>4<br>10<br>2<br>5<br>0 0<br>0 5 10 15 20 25 30 35 40 45 0.001 0.01 0.1 1 10 100 1000<br>VR, REVERSE VOLTAGE (V) tP, PULSE ON TIME (ms)P, PULSE ON TIME (ms), PULSE ON TIME (ms)<br>A)<br>�<br>, FORWARD CURRENT (mA)IF , REVERSE CURRENT (Ir<br>W)<br>�<br>, AVERAGE FORWARD POWER (mW)PF , AVERAGE REVERSE POWER (PF<br>, TOTAL CAPACITANCE (pF)<br>T<br>C<br>, FORWARD SURGE MAX CURRENT (A)<br>IFSMFSM<br>**----- End of picture text -----**<br>


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12<br>Based on square wave currentsTJ = 25TJ = 25J = 25 = 25 ° C prior to surge<br>10<br>8<br>6<br>4<br>2<br>0<br>0.001 0.01 0.1 1 10 100 1000<br>tP, PULSE ON TIME (ms)P, PULSE ON TIME (ms), PULSE ON TIME (ms)<br>, FORWARD SURGE MAX CURRENT (A)<br>IFSMFSM<br>**----- End of picture text -----**<br>


**Figure 10. Forward Surge Current** 

**Figure 9. Total Capacitance** 

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**NSR05T40P2** 

## **PACKAGE DIMENSIONS** 

**SOD−923** CASE 514AB ISSUE C 

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−X−<br>D<br>−Y−<br>E<br>1 2<br>2X b +q_hy<br>0.08 X Y<br>TOP VIEW<br>A<br>c _— HE<br>SIDE VIEW<br>ee 2X L<br>2X L2<br>BOTTOM VIEW<br>**----- End of picture text -----**<br>


- NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 

2. CONTROLLING DIMENSION: MILLIMETERS. 

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 

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4. DIMENSIONS D AND E DO NOT INCLUDE MOLD<br>FLASH, PROTRUSIONS, OR GATE BURRS.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 0.34 0.37 0.40 0.013 0.015 0.016<br>Sooa== b 0.15 0.20 0.25 0.006 0.008 0.010<br>c 0.07 0.12 0.17 0.003 0.005 0.007<br>D 0.75 0.80 0.85 0.030 0.031 0.033<br>E 0.55 0.60 0.65 0.022 0.024 0.026<br>HE 0.95 1.00 1.05 0.037 0.039 0.041<br>L 0.19 REF 0.007 REF<br>L2 0.05 0.10 0.15 0.002 0.004 0.006<br>—<—_<br>SOLDERING FOOTPRINT*<br>1.20<br>2X<br>0.36 2X<br>0.25<br>| le<br>PACKAGE sg<br>OUTLINE<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


See Application Note AND8455/D for more mounting details 

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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